PSMN1R8-40YLC,115 - NEXPERIA

PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using

NextPower technology

22 August 2012 Product data sheet

1. Product profile

1.1 General description

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product

is designed and qualified for use in a wide range of industrial, communications and

domestic equipment.

1.2 Features and benefits

•High reliability Power SO8 package, qualified to 175°C

•Optimised for 4.5V Gate drive utilising NextPower Superjunction technology

•Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads

•Ultra low Rdson and low parasitic inductance

1.3 Applications

•DC-to-DC converters

•Load switching

•Power OR-ing

•Server power supplies

•Sync rectifier

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - - 40 V

IDdrain current Tmb = 25 °C; VGS = 10 V; Fig. 1 [1] - - 100 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 272 W

Tjjunction temperature -55 - 175 °C

Static characteristics

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;

Fig. 12

- 1.8 2.1 mΩRDSon drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 12

- 1.5 1.8 mΩ

Dynamic characteristics

QGD gate-drain charge VGS = 4.5 V; ID = 25 A; VDS = 20 V;

Fig. 15; Fig. 14

- 10.9 - nC

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 2 / 14

Symbol Parameter Conditions Min Typ Max Unit

QG(tot) total gate charge VGS = 4.5 V; ID = 25 A; VDS = 20 V;

Fig. 15; Fig. 14

- 45 - nC

[1] Continuous current is limited by package.

2. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 S source

2 S source

3 S source

4 G gate

mb D mounting base; connected to

drain

1 2 3 4

LFPAK; Power-

SO8 (SOT669)

mbb076

3. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PSMN1R8-40YLC LFPAK;

Power-SO8

plastic single-ended surface-mounted package; 4 leads SOT669

4. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C - 40 V

VDGR drain-gate voltage 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ - 40 V

VGS gate-source voltage -20 20 V

VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 100 AIDdrain current

VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 100 A

IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4 - 1128 A

Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 272 W

Tstg storage temperature -55 175 °C

Tjjunction temperature -55 175 °C

Tsld(M) peak soldering temperature - 260 °C

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 3 / 14

Symbol Parameter Conditions Min Max Unit

VESD electrostatic discharge voltage MM (JEDEC JESD22-A115) 890 - V

Source-drain diode

ISsource current Tmb = 25 °C [1] - 100 A

ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1128 A

Avalanche ruggedness

EDS(AL)S non-repetitive drain-source

avalanche energy

VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;

Vsup ≤ 40 V; RGS = 50 Ω; unclamped;

Fig. 3

- 248 mJ

[1] Continuous current is limited by package.

003aaj880

160

240

320

0 50 100 150 200

Tmb(°C)

(A)

(1)

Fig. 1. Continuous drain current as a function of

mounting base temperature

Tmb (°C)

0 20015050 100

03na19

120

Pder

(%)

Fig. 2. Normalized total power dissipation as a

function of mounting base temperature

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 4 / 14

003aaj881

102

103

10-3 10-2 10-1 1 10

tAL

(ms)

IAL

(A)

(1)

(2)

Fig. 3. Single pulse avalanche rating; avalanche current as a function of avalanche time

003aaj882

10-1

102

103

104

10-1 1 10 102

VDS(V)

(A)

Limit RDSon = VDS/ ID

100 µs

10 ms

tp=10 µs

100 ms

1 ms

Fig. 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance

from junction to

mounting base

Fig. 5 - 0.45 0.55 K/W

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 5 / 14

003aaj883

single shot

0.2

0.1

0.05

10-3

10-2

10-1

10-5 10-4 10-3 10-2 10-1 1

tp(s)

Zth(j-mb)

(K/W)

δ = 0.5

0.02

δ =

10-6

Fig. 5. Transient thermal impedance from junction to mounting base as a function of pulse duration

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

ID = 250 µA; VGS = 0 V; Tj = 25 °C 40 - - VV(BR)DSS drain-source

breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 36 - - V

ID = 1 mA; VDS = VGS; Tj = 25 °C;

Fig. 10

1.05 1.45 1.95 V

ID = 10 mA; VDS = VGS; Tj = 150 °C;

Fig. 11

0.5 - - V

VGS(th) gate-source threshold

voltage

ID = 1 mA; VDS = VGS; Tj = -55 °C;

Fig. 11

- - 2.25 V

VDS = 40 V; VGS = 0 V; Tj = 25 °C - - 1 µAIDSS drain leakage current

VDS = 40 V; VGS = 0 V; Tj = 150 °C - - 100 µA

VGS = 16 V; VDS = 0 V; Tj = 25 °C - - 100 nAIGSS gate leakage current

VGS = -16 V; VDS = 0 V; Tj = 25 °C - - 100 nA

VGS = 4.5 V; ID = 25 A; Tj = 25 °C;

Fig. 12

- 1.8 2.1 mΩ

VGS = 4.5 V; ID = 25 A; Tj = 150 °C;

Fig. 12; Fig. 13

- - 3.6 mΩ

VGS = 10 V; ID = 25 A; Tj = 25 °C;

Fig. 12

- 1.5 1.8 mΩ

RDSon drain-source on-state

resistance

VGS = 10 V; ID = 25 A; Tj = 150 °C;

Fig. 12; Fig. 13

- - 3.25 mΩ

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 6 / 14

Symbol Parameter Conditions Min Typ Max Unit

RGgate resistance f = 1 MHz 0.5 1 2 Ω

Dynamic characteristics

ID = 25 A; VDS = 20 V; VGS = 10 V;

Fig. 14; Fig. 15

- 96 - nC

ID = 25 A; VDS = 20 V; VGS = 4.5 V;

Fig. 15; Fig. 14

- 45 - nC

QG(tot) total gate charge

ID = 0 A; VDS = 0 V; VGS = 10 V - 88 - nC

QGS gate-source charge - 15.5 - nC

QGS(th) pre-threshold gate-

source charge

- 8.4 - nC

QGS(th-pl) post-threshold gate-

source charge

- 7.1 - nC

QGD gate-drain charge

ID = 25 A; VDS = 20 V; VGS = 4.5 V;

Fig. 15; Fig. 14

- 10.9 - nC

VGS(pl) gate-source plateau

voltage

ID = 25 A; VDS = 20 V; Fig. 15; Fig. 14 - 2.7 - V

Ciss input capacitance - 6680 - pF

Coss output capacitance - 825 - pF

Crss reverse transfer

capacitance

VDS = 20 V; VGS = 0 V; f = 1 MHz;

Tj = 25 °C; Fig. 16

- 310 - pF

td(on) turn-on delay time - 32.2 - ns

trrise time - 37 - ns

td(off) turn-off delay time - 62.5 - ns

tffall time

VDS = 20 V; RL = 0.8 Ω; VGS = 4.5 V;

RG(ext) = 5 Ω

- 31.7 - ns

Qoss output charge VGS = 0 V; VDS = 20 V; f = 1 MHz;

Tj = 25 °C

- 30 - nC

Source-drain diode

VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.77 1.1 V

trr reverse recovery time - 37 - ns

Qrrecovered charge

IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 20 V - 43 - nC

tareverse recovery rise

time

- 21 - ns

tbreverse recovery fall

time

VGS = 0 V; IS = 25 A; dIS/dt = -100 A/µs;

VDS = 20 V; Fig. 18

- 16 - ns

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 7 / 14

003aaj884

100

0 0.5 1 1.5 2

VDS(V)

(A)

VGS(V) =

2.6

4.5

2.4

2.2

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aaj885

2.5

7.5

0 4 8 12 16

VGS(V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

003aaj886

100

150

200

250

300

0 20 40 60 80 100

ID(A)

gfs

(S)

Fig. 8. Forward transconductance as a function of

drain current; typical values

003aaj887

100

0 1 2 3 4

VGS(V)

(A)

Tj= 25 °C

Tj= 150 °C

Fig. 9. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 8 / 14

003aaj888

10-6

10-5

10-4

10-3

10-2

10-1

0 1 2 3

VGS(V)

(A)

Min Max

Typ

Fig. 10. Sub-threshold drain current as a function of

gate-source voltage

003aaj889

-60 0 60 120 180

Tj(°C)

VGS(th)

(V) Max (1mA)

Min (5mA)

ID= 5mA

1mA

Fig. 11. Gate-source threshold voltage as a function of

junction temperature

003aaj890

0 20 40 60 80 100

ID(A)

RDSon

(mΩ)

4.5

VGS (V) =10

2.6

2.4

Fig. 12. Drain-source on-state resistance as a function

of drain current; typical values

003aaj891

0.5

1.5

-60 0 60 120 180

Tj(°C)

VGS=4.5V

10V

Fig. 13. Normalized drain-source on-state resistance

factor as a function of junction temperature

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 9 / 14

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

Fig. 14. Gate charge waveform definitions

003aaj892

0 20 40 60 80 100

QG(nC)

VGS

(V)

VDS =

32 V

8 V

20 V

Fig. 15. Gate-source voltage as a function of gate

charge; typical values

003aaj893

102

103

104

10-1 1 10 102

VDS (V)

(pF)

Ciss

Crss

Coss

Fig. 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aaj894

100

0 0.3 0.6 0.9 1.2

VSD(V)

(A)

Tj= 25 °C

Tj= 150°C

Fig. 17. Source current as a function of source-drain

voltage; typical values

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 10 / 14

003 a af 44 4

t (s )

(A)

IRM

0.25 I

trr

tatb

Fig. 18. Reverse recovery timing definition

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 11 / 14

7. Package outline

REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT669 MO-235 06-03-16

11-03-25

0 2.5 5 mm

scale

A2b cA eUNIT

DIMENSIONS (mm are the original dimensions)

mm 1.10

0.95

0.15

0.00

1.20

1.01

0.50

0.35

4.41

3.62

2.2

2.0

0.9

0.7

0.25

0.19

0.30

0.24

4.10

3.80

6.2

5.8

1.3

0.8

0.85

0.40

1.3

0.8

8°

0°

w y

D(1)

5.0

4.8

E(1)

3.3

3.1

E1(1)

D1(1)

max

0.25 4.20 1.27 0.25 0.1

12 3 4

mounting

base

Plastic single-ended surface-mounted package (LFPAK; Power-SO8); 4 leads SOT669

1/2 e

y C

(A )

detail X

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

Fig. 19. Package outline LFPAK; Power-SO8 (SOT669)

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 12 / 14

8. Legal information

8.1 Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nexperia.com.

8.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modifications or additions.

Nexperia does not give any representations or warranties as to

the accuracy or completeness of information included herein and shall have

no liability for the consequences of use of such information.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. Nexperia does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences

of use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is

intended for quick reference only and should not be relied upon to contain

detailed and full information. For detailed and full information see the

relevant full data sheet, which is available on request via the local Nexperia

sales office. In case of any inconsistency or conflict with the

short data sheet, the full data sheet shall prevail.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

Nexperia and its customer, unless Nexperia and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the Nexperia product

is deemed to offer functions and qualities beyond those described in the

Product data sheet.

8.3 Disclaimers

Limited warranty and liability — Information in this document is believed

to be accurate and reliable. However, Nexperia does not give

any representations or warranties, expressed or implied, as to the accuracy

or completeness of such information and shall have no liability for the

consequences of use of such information. Nexperia takes no

responsibility for the content in this document if provided by an information

source outside of Nexperia.

In no event shall Nexperia be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation -

lost profits, lost savings, business interruption, costs related to the removal

or replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, Nexperia’s aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to

make changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

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Suitability for use — Nexperia products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of a Nexperia product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. Nexperia and its suppliers accept no liability for

inclusion and/or use of Nexperia products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. Nexperia makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their

applications and products using Nexperia products, and Nexperia

accepts no liability for any assistance with applications or

customer product design. It is customer’s sole responsibility to determine

whether the Nexperia product is suitable and fit for the

customer’s applications and products planned, as well as for the planned

application and use of customer’s third party customer(s). Customers should

provide appropriate design and operating safeguards to minimize the risks

associated with their applications and products.

Nexperia does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default

in the customer’s applications or products, or the application or use by

customer’s third party customer(s). Customer is responsible for doing all

necessary testing for the customer’s applications and products using Nexperia

products in order to avoid a default of the applications

and the products or of the application or use by customer’s third party

customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those

given in the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nexperia.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. Nexperia hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 13 / 14

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific Nexperia product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor

tested in accordance with automotive testing or application requirements.

Nexperia accepts no liability for inclusion and/or use of non-

automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards,

customer (a) shall use the product without Nexperia’s warranty

of the product for such automotive applications, use and specifications, and

(b) whenever customer uses the product for automotive applications beyond

Nexperia’s specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies Nexperia for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond Nexperia’s

standard warranty and Nexperia’s product specifications.

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

8.4 Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Nexperia PSMN1R8-40YLC

N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower

technology

PSMN1R8-40YLC All information provided in this document is subject to legal disclaimers.

Product data sheet 22 August 2012 14 / 14

9. Contents

1 Product profile ....................................................... 1

1.1 General description .............................................. 1

1.2 Features and benefits ...........................................1

1.3 Applications .......................................................... 1

1.4 Quick reference data ............................................ 1

2 Pinning information ............................................... 2

3 Ordering information ............................................. 2

4 Limiting values .......................................................2

5 Thermal characteristics .........................................4

6 Characteristics .......................................................5

7 Package outline ................................................... 11

8 Legal information .................................................12

8.1 Data sheet status ............................................... 12

8.2 Definitions ...........................................................12

8.3 Disclaimers .........................................................12

8.4 Trademarks ........................................................ 13

For more information, please visit: http://www.nexperia.com

For sales office addresses, please send an email to: salesaddresses@nexperia.com

Date of release:

22 August 2012