SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOSTM Power Transistor VDS @ Tjmax 650 V RDS(on) 0.6 ID 7.3 A Feature * New revolutionary high voltage technology * Ultra low gate charge PG-TO220FP * Periodic avalanche rated PG-TO262 PG-TO220 * Extreme dv/dt rated 2 * High peak current capability 1 * Improved transconductance 2 3 1 23 P-TO220-3-31 P-TO220-3-1 * PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 Package PG-TO220-3 Ordering Code Q67040-S4400 Marking 07N60C3 SPI07N60C3 PG-TO262 Q67040-S4424 07N60C3 SPA07N60C3 PG-TO220FP SP000216303 07N60C3 Maximum Ratings Parameter Symbol SPP_I Continuous drain current Unit Value SPA A ID TC = 25 C 7.3 7.31) TC = 100 C 4.6 4.61) ID puls 21.9 21.9 A EAS 230 230 mJ EAR 0.5 0.5 Avalanche current, repetitive tAR limited by Tjmax IAR 7.3 7.3 A Gate source voltage static VGS 20 20 V Gate source voltage AC (f >1Hz) VGS 30 30 Power dissipation, TC = 25C Ptot 83 32 Operating and storage temperature T j , Tstg Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD =50V Reverse diode dv/dt Rev. 3.2 Rev. 3.3 6) dv/dt Page 1 Page 1 -55...+150 15 W C V/ns 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, ID = 7.3 A, Tj = 125 C Thermal Characteristics Symbol Parameter min. typ. max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction - case, FullPAK RthJC_FP - - 3.9 Thermal resistance, junction - ambient, leaded RthJA - - 62 Thermal resistance, junction - ambient, FullPAK RthJA_FP - - 80 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 3) - 35 - - - 260 Soldering temperature, wavesoldering Tsold K/W C 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at T j=25C unless otherwise specified Symbol Conditions Parameter Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=7.3A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=350A, VGS=VDS Zero gate voltage drain current I DSS VDS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance Rev. 3.2 Rev. 3.3 RG A Tj=25C - 0.5 1 Tj=150C - - 100 VGS=30V, VDS=0V - - 100 VGS=10V, ID=4.6A Tj=25C - 0.54 0.6 Tj=150C - 1.46 - f=1MHz, open drain - 0.8 - Page 2 Page 2 nA 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - 6 - S pF Characteristics Transconductance g fs V DS2*I D*RDS(on)max, ID=4.6A Input capacitance Ciss V GS=0V, V DS=25V, - 790 - Output capacitance Coss f=1MHz - 260 - Reverse transfer capacitance Crss - 16 - - 30 - - 55 - Effective output capacitance,4) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance,5) Co(tr) time related Turn-on delay time td(on) V DD=380V, V GS=0/13V, - 6 - Rise time tr ID=7.3A, RG=12, - 3.5 - Turn-off delay time td(off) Tj=125C - 60 100 Fall time tf - 7 15 - 3 - - 9.2 - - 21 27 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD=480V, ID=7.3A VDD=480V, ID=7.3A, nC VGS=0 to 10V Gate plateau voltage V(plateau) VDD=480V, ID=7.3A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 3.2 Rev. 3.3 Page 3 Page 3 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 Electrical Characteristics Symbol Parameter Inverse diode continuous IS Conditions Values Unit min. typ. max. - - 7.3 - - 21.9 TC=25C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V Reverse recovery time trr VR=480V, IF=IS , - 400 600 ns Reverse recovery charge Qrr diF/dt=100A/s - 4 - C Peak reverse recovery current Irrm - 28 - A Peak rate of fall of reverse dirr /dt - 800 - A/s Tj=25C recovery current Typical Transient Thermal Characteristics Symbol Value Unit SPP_I SPA Rth1 0.024 0.024 Rth2 0.046 Rth3 Symbol Value Unit SPP_I SPA Cth1 0.00012 0.00012 0.046 Cth2 0.0004578 0.0004578 0.085 0.085 Cth3 0.000645 0.000645 Rth4 0.308 0.195 Cth4 0.001867 0.001867 Rth5 0.317 0.45 Cth5 0.004795 0.007558 Rth6 0.112 2.511 Cth6 0.045 0.412 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Rev. 3.2 Rev. 3.3 Page 4 Page 4 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 1 Power dissipation 2 Power dissipation FullPAK Ptot = f (TC) Ptot = f (TC) 100 SPP07N60C3 34 W W 28 80 24 Ptot Ptot 70 60 50 20 16 40 12 30 8 20 4 10 0 0 20 40 60 80 100 120 C 0 0 160 20 40 60 80 100 120 TC 160 TC 3 Safe operating area 4 Safe operating area FullPAK ID = f ( V DS ) ID = f (VDS) parameter : D = 0 , TC =25C parameter: D = 0, TC = 25C 10 C 2 10 2 10 1 10 1 ID A ID A 10 0 10 -1 10 -2 0 10 Rev. 3.2 Rev. 3.3 10 0 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 1 10 -1 10 2 10 V VDS 10 -2 0 10 3 Page 5 Page 5 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 1 10 2 10 V VDS 3 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 5 Transient thermal impedance 6 Transient thermal impedance FullPAK ZthJC = f (t p) ZthJC = f (t p) parameter: D = tp/T parameter: D = tp/t 1 10 10 1 K/W K/W ZthJC 10 0 ZthJC 10 0 10 -1 10 -2 10 -3 -7 10 10 -1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -6 10 -5 10 -4 10 -3 10 -2 10 s tp D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 -1 1 s 10 tp 7 Typ. output characteristic 8 Typ. output characteristic ID = f (VDS); Tj=25C ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS parameter: tp = 10 s, VGS 13 24 A 20V 10V 8V A 20V 8V 6.5V 11 7V 6V 9 6,5V 16 ID ID 10 8 5.5V 7 12 6V 6 5V 5 8 5,5V 4 4.5V 3 5V 4 2 4,5V 0 0 5 10 15 0 0 25 VDS Rev. 3.3 2 4 6 8 10 12 14 16 18 20 22 V 25 VDS V Rev. 3.2 4V 1 Page 6 Page 6 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 9 Typ. drain-source on resistance 10 Drain-source on-state resistance RDS(on)=f(ID) RDS(on) = f (Tj) parameter: Tj=150C, VGS parameter : ID = 4.6 A, VGS = 10 V 10 4.5V RDS(on) 8 SPP07N60C3 4V 2.8 RDS(on) 3.4 7 5V 6 6V 6.5V 8V 20V 5 5.5V 4 2.4 2 1.6 1.2 3 98% 0.8 2 typ 0.4 1 0 0 2 4 6 8 10 12 0 -60 A 15 ID -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics 12 Typ. gate charge ID= f ( VGS ); VDS 2 x ID x RDS(on)max VGS = f (Q Gate) parameter: ID = 7.3 A pulsed parameter: tp = 10 s 24 16 SPP07N60C3 A V 25C 20 12 VGS ID 18 16 14 0,2 VDS max 10 0,8 VDS max 150C 12 8 10 6 8 6 4 4 2 2 0 0 Rev. 3.2 Rev. 3.3 2 4 6 8 10 12 14 16 V 20 VGS Page 7 Page 7 0 0 4 8 12 16 20 24 28 nC 34 Q Gate 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 13 Forward characteristics of body diode 14 Typ. switching time IF = f (VSD) t = f (ID), inductive load, T j=125C parameter: Tj , tp = 10 s par.: V DS=380V, VGS=0/+13V, R G=12 2 SPP07N60C3 10 90 ns A td(off) 70 10 1 t IF 60 50 40 10 0 30 tf td(on) tr Tj = 25 C typ Tj = 150 C typ 20 Tj = 25 C (98%) 10 Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 0 0 3 1 2 3 4 5 6 A ID VSD 15 Typ. switching time 16 Typ. drain current slope t = f (RG), inductive load, Tj=125C di/dt = f(R G), inductive load, Tj = 125C par.: VDS=380V, VGS=0/+13V, ID=7.3 A par.: V DS=380V, VGS=0/+13V, ID=7.3A 500 8 3000 ns A/s 400 di/dt t 350 300 250 2000 1500 td(off) 200 di/dt(on) 1000 150 td(on) tf tr 100 500 di/dt(off) 50 0 0 Rev. 3.2 Rev. 3.3 20 40 60 80 100 130 RG Page 8 Page 8 0 0 20 40 60 80 100 130 RG 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 17 Typ. drain source voltage slope 18 Typ. switching losses dv/dt = f(RG), inductive load, Tj = 125C E = f (ID), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, ID=7.3A par.: V DS=380V, VGS=0/+13V, R G=12 100 0.025 V/ns diode commutation losses. mWs 80 70 E dv/dt *) E on includes SDP06S60 60 50 0.015 dv/dt(on) 40 Eoff 0.01 30 20 0.005 Eon* dv/dt(off) 10 0 0 20 40 60 80 0 0 120 1 2 3 4 5 6 RG 19 Typ. switching losses 20 Avalanche SOA E = f(RG), inductive load, Tj=125C IAR = f (tAR) par.: VDS=380V, VGS=0/+13V, ID=7.3A par.: Tj 150 C 0.2 mWs A ID 8 8 *) Eon includes SDP06S60 diode commutation losses. A 0.16 Tj(START)=25C 6 IAR E 0.14 0.12 0.1 5 Tj(START)=125C 4 Eoff 0.08 3 0.06 Eon* 2 0.04 1 0.02 0 0 Rev. 3.2 Rev. 3.3 20 40 60 80 100 130 RG Page 9 Page 9 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 t AR 4 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 21 Avalanche energy 22 Drain-source breakdown voltage EAS = f (Tj) V(BR)DSS = f (Tj) par.: ID = 5.5 A, V DD = 50 V SPP07N60C3 260 720 mJ V 220 V(BR)DSS EAS 200 180 160 680 660 640 140 120 620 100 600 80 60 580 40 560 20 0 20 40 60 80 100 120 C 540 -60 160 -20 20 60 100 C Tj 180 Tj 23 Avalanche power losses 24 Typ. capacitances PAR = f (f ) C = f (VDS) parameter: E AR=0.5mJ parameter: V GS=0V, f=1 MHz 10 4 500 pF W Ciss C PAR 10 3 300 10 2 Coss 200 10 1 100 0 4 10 10 5 MHz 10 6 Rev. 3.3 100 200 300 400 V 600 VDS f Rev. 3.2 10 0 0 Crss Page 10 Page 10 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 25 Typ. Coss stored energy Eoss=f(VDS) 5.5 J 4.5 Eoss 4 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Rev. 3.2 Rev. 3.3 Page 11 Page 11 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO220-3-1, PG-TO220-3-21 : Outline Rev. 3.2 Rev. 3.3 Page 12 Page 12 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 Outline PGTO220 FullPAK 1 2 3 DIMENSIONS A A1 A2 b b1 b2 b3 b4 c D D1 E e H L L1 oP Q Rev. 3.2 Rev. 3.3 Page 13 Page 13 MILLIMETERS MIN. MAX. 4.50 4.90 2.34 2.85 2.86 2.42 0.90 0.65 0.95 1.38 1.51 0.95 0.65 1.38 0.65 1.51 0.63 0.40 16.15 15.67 9.83 8.97 10.65 10.00 2.54 29.75 28.70 13.75 12.78 3.45 2.83 3.30 3.00 3.50 3.15 DOCUMENT NO. Z8B00003319 REVISION 07 SCALE 5:1 0 1 2 3 4 5mm EUROPEAN PROJECTION ISSUE DATE 27.01.2017 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 PG-TO-262-3-1/PG-TO262-3-21 (I-PAK) Rev. 3.2 Rev. 3.3 Page 14 Page 14 2009-11-27 2018-02-13 600VCoolMOSC3PowerTransistor SPx07N60C3 RevisionHistory SPx07N60C3 Revision:2018-02-27,Rev.2.3 Previous Revision Revision Date Subjects (major changes since last revision) 3.3 2018-02-27 Outline PG-TO-220 FullPAK update TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 15 Rev.3.3,2018-02-27