BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G Triacs Silicon Bidirectional Thyristors http://onsemi.com Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. TRIACS 16 AMPERES RMS 600 thru 800 VOLTS Features * * * * * * * * Blocking Voltage to 800 V On-State Current Rating of 16 A RMS at 80C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dV/dt - 1500 V/ms minimum at 125C Minimizes Snubber Networks for Protection Industry Standard TO-220AB Package High Commutating dI/dt - 7.5 A/ms minimum at 125C These are Pb-Free Devices MT2 Rating Symbol Peak Repetitive Off-State Voltage (Note 1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) BTB16-600BW3G BTB16-700BW3G BTB16-800BW3G VDRM, VRRM On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 80C) IT(RMS) 16 A ITSM 170 A Value Unit V 600 700 800 120 A2sec VDSM/ VRSM VDSM/VRSM +100 V IGM 4.0 A PG(AV) 1.0 W Operating Junction Temperature Range TJ -40 to +125 C Storage Temperature Range Tstg -40 to +150 C Non-Repetitive Surge Peak Off-State Voltage (TJ = 25C, t = 8.3 ms) Peak Gate Current (TJ = 125C, t 20 ms) Average Gate Power (TJ = 125C) 1 2 BTB16-xBWG AYWW TO-220AB CASE 221A STYLE 4 3 x A Y WW G = 6, 7 or 8 = Assembly Location = Year = Work Week = Pb-Free Package PIN ASSIGNMENT I2t Circuit Fusing Consideration (t = 8.3 ms) MARKING DIAGRAM 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, TC = 25C) MT1 G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. VDRM and VRRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. 1 Main Terminal 1 2 Main Terminal 2 3 Gate 4 Main Terminal 2 ORDERING INFORMATION Device Package Shipping BTB16-600BW3G TO-220AB (Pb-Free) 50 Units / Rail BTB16-700BW3G TO-220AB (Pb-Free) 50 Units / Rail BTB16-800BW3G TO-220AB (Pb-Free) 50 Units / Rail *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2009 May, 2009 - Rev. 2 1 Publication Order Number: BTB16-600BW3/D BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction-to-Case (AC) Junction-to-Ambient Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 seconds Symbol Value Unit RqJC RqJA 1.9 60 C/W TL 260 C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit - - - - 0.005 2.0 - - 1.55 2.5 2.5 2.5 - - - 50 50 50 - - 60 - - - - - - 70 90 70 0.5 0.5 0.5 - - - 1.7 1.1 1.1 0.2 0.2 0.2 - - - - - - (dI/dt)c 7.5 - - A/ms Critical Rate of Rise of On-State Current (TJ = 125C, f = 120 Hz, IG = 2 x IGT, tr 100 ns) dI/dt - - 50 A/ms Critical Rate of Rise of Off-State Voltage (VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125C) dV/dt 1500 - - V/ms OFF CHARACTERISTICS Peak Repetitive Blocking Current (VD = Rated VDRM, VRRM; Gate Open) TJ = 25C TJ = 125C IDRM/ IRRM mA ON CHARACTERISTICS Peak On-State Voltage (Note 2) (ITM = 22.5 A Peak) VTM Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IGT Holding Current (VD = 12 V, Gate Open, Initiating Current = 150 mA) IH Latching Current (VD = 12 V, IG = 50 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) IL Gate Trigger Voltage (VD = 12 V, RL = 30 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGT Gate Non-Trigger Voltage (TJ = 125C) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) VGD V mA mA mA V V DYNAMIC CHARACTERISTICS Rate of Change of Commutating Current, See Figure 10. (Gate Open, TJ = 125C, No Snubber) 2. Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. http://onsemi.com 2 BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G Voltage Current Characteristic of Triacs (Bidirectional Device) + Current Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off State Voltage IRRM Peak Reverse Blocking Current VTM Maximum On State Voltage IH Holding Current VTM on state IRRM at VRRM IH Quadrant 3 MainTerminal 2 - IH off state VTM Quadrant Definitions for a Triac MT2 POSITIVE (Positive Half Cycle) + (+) MT2 Quadrant II (+) MT2 Quadrant I (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF IGT - + IGT (-) MT2 Quadrant III (-) MT2 Quadrant IV (+) IGT GATE (-) IGT GATE MT1 MT1 REF REF - MT2 NEGATIVE (Negative Half Cycle) All polarities are referenced to MT1. With in-phase signals (using standard AC lines) quadrants I and III are used. http://onsemi.com 3 Quadrant 1 MainTerminal 2 + + Voltage IDRM at VDRM BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G 125 24 22 PAV, AVERAGE POWER (WATTS) TC, CASE TEMPERATURE (C) 120 30 60 90 115 110 105 100 120 95 180 90 DC 85 80 75 70 0 2 4 6 8 10 12 IT(RMS), RMS ONSTATE CURRENT (AMP) 14 120 16 14 12 10 8 90 6 60 4 2 0 16 DC 180 20 18 30 0 100 MAXIMUM @ TJ = 125C 10 16 1 0.1 0.01 0.1 1 10 100 t, TIME (ms) 1000 1*104 Figure 4. Thermal Response 55 50 MAXIMUM @ TJ = 25C 1 IH, HOLD CURRENT (mA) I T, INSTANTANEOUS ONSTATE CURRENT (AMP) TYPICAL AT TJ = 25C 4 6 8 10 12 14 IT(AV), AVERAGE ONSTATE CURRENT (AMP) Figure 2. On-State Power Dissipation r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 1. Typical RMS Current Derating 2 MT2 Positive 45 40 35 30 25 20 MT2 Negative 15 10 0.1 5 -40 -25 -10 0 0.5 1 1.5 2 2.5 3 3.5 VT, INSTANTANEOUS ON-STATE VOLTAGE (V) 4 5 20 35 50 65 80 95 110 125 TJ, JUNCTION TEMPERATURE (C) Figure 3. On-State Characteristics Figure 5. Typical Hold Current Variation http://onsemi.com 4 BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G 1.8 VD = 12 V RL = 30 W VD = 12 V RL = 30 W 1.6 Q1 1.4 Q3 1.2 10 Q2 Q1 1 Q3 0.8 Q2 0.6 1 -40 -25 -10 5 20 35 50 65 80 0.4 -40 -25 -10 95 110 125 TJ, JUNCTION TEMPERATURE (C) Figure 6. Typical Gate Trigger Current Variation 20 35 50 65 80 95 110 125 Figure 7. Typical Gate Trigger Voltage Variation LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC CHARGE 5 TJ, JUNCTION TEMPERATURE (C) 1N4007 MEASURE I TRIGGER CHARGE CONTROL NONPOLAR CL TRIGGER CONTROL IGT, GATE TRIGGER VOLTAGE (mA) 100 + 200 V MT2 1N914 51 W MT1 G Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information. Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c http://onsemi.com 5 BTB16-600BW3G, BTB16-700BW3G, BTB16-800BW3G PACKAGE DIMENSIONS TO-220 CASE 221A-07 ISSUE AA -T- B F 4 Q T SEATING PLANE C S A U 1 2 3 H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 STYLE 4: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 MAIN TERMINAL 1 MAIN TERMINAL 2 GATE MAIN TERMINAL 2 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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