HA2-5135/883 - Intersil Corporation

®HA-5135/883

Precision Operational Amplifier

Description

The HA-5135/883 is a precision operational amplifier manu-

factured using a combination of key technological advance-

ments to provide outstanding input characteristics.

A high Beta input stage is combined with laser trimming,

dielectric isolation, and matching techniques to produce

75µV (max) input offset voltage and 0.4µV/oC (max) input

offset voltage average drift. Other features enhanced by this

process include 9nV/√Hz (typ) Input Noise Voltage, 4nA

Input Bias Current (max) and 120dB Open Loop Gain (min).

These features coupled with 106dB CMRR and 94dB PSRR

make HA-5135/883 an ideal device for precision D.C. instru-

mentation amplifiers. Excellent input characteristics in con-

junction with 0.6MHz (min) bandwidth and 0.5V/µs (min)

slew rate, makes this amplifier extremely useful for precision

integrator and biomedical amplifier designs. These amplifi-

ers are also well suited for precision data acquisition and for

accurate threshold detector applications.

Ordering Information

PART

NUMBER TEMPERAT URE

RANGE PACKAGE

HA2-5135/883 -55oC to +125oC8 Pin Can

Features

• This Circuit is Processed in Accordance to MIL-STD-

883 and is Fully Conformant Under the Provisions of

Paragraph 1.2.1.

• Low Offset Drift . . . . . . . . . . . . . . . . . . . 0.4µV/oC (Max)

• Low Offset Voltage . . . . . . . . . . . . . . . . . . . . 7 5µV (Max)

• High Gain . . . . . . . . . . . . . . . . . . . . 120dB(1MV/V) (Min)

• High CMRR. . . . . . . . . . . . . . . . . . . . . . . . . .106dB (Min)

• High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . . .94dB (Min)

• Low Supply Current. . . . . . . . . . . . . . . . . . 1.7mA (Max)

• Low Noise Voltage Density at 1kHz. . . . . 9nV/√Hz (Max)

• Low Noise Current Density at 1kHz. . . . 0.4pA/√Hz (Max)

Applications

• High Gain Instrumentation

• Precision Data Acquisition

• Precision Integrators

• Biomedical Amplifiers

• Precision Threshold Detectors

April 2002

Spec Number 511016-883

FN3731.2

Pinout

HA-5135/883

(METAL CAN)

TOP VIEW

BAL1

OUT-IN

V- (CASE)

BAL 2

+IN

V+

BAL1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-888-INTERSIL or 321-724-7143 |Intersil (and design) is a trademark of Intersil Americas Inc.

HA-5135/883

Absolute Maximum Ratings Thermal Information

Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . 40V

Differential Input Voltage (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . 7V

Voltage at Either Input Terminal. . . . . . . . . . . . . . . . . . . . . . V+ to V-

Input Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25mA

Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection

Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC

Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +15 0 oC

ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V

Lead Temperature (Soldering 10s). . . . . . . . . . . . . . . . . . . . +300oC

Thermal Resistance θJA θJC

Metal Can Packag e. . . . . . . . . . . . . . . . . 160oC/W 70oC/W

Package Power Dissipation Limit at +75oC for TJ ≤ +175oC

Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW

Package Power Dissipation Derating Factor Above +75oC

Metal Can Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC

CAUTION : Str esse s a bove th ose l isted i n “Abso lute Maximum Rating s” may cau se per ma nen t d am age to the de vice. Th i s is a stress o n ly rati ng and oper ation

of the device at these or any oth er cond it ion s above those indi ca ted in the operational sections of this specification is not implied.

NOTE:

1. θJA is mea sured with th e compon ent mount ed on a low ef fective th ermal con ductivi ty test boa rd in free air . See Tec h Brief

TB379 for details.

Operating Conditions

Operating Temperature Range. . . . . . . . . . . . . . . . -55oC to +1 2 5 oC

Operating Supply Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±15V VINCM ≤ 1/2 (V+ - V-)

RL ≥ 600Ω

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: VSUPPLY = ±15V , RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.

PARAMETERS SYMBOL CONDITIONS GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

Input Offset Voltage VIO VCM = 0V 1 +25oC -75 75 µV

2, 3 +125oC, -55oC -130 130 µV

Input Bias Current IBVCM = 0V,

RS = 10kΩ, 50Ω 1+25

oC-44nA

2, 3 +125oC, -55oC-6 6 nA

Input Offset Current IIO VCM = 0V,

+RS = 10kΩ,

-RS = 10kΩ

1+25

oC-44nA

2, 3 +125oC, -55oC-5.55.5 nA

Common Mode

Range +CMR V+ = +3V,

V- = -27V 1+25

oC12-V

2, 3 +125oC, -55oC12 - V

-CMR V+ = +27V,

V- = -3V 1+25

oC--12V

2, 3 +125oC, -55oC--12V

Large Signal Voltage

Gain +AVOL VOUT = 0V and +10V,

RL = 2kΩ4+25

oC 120 - kV/V

5, 6 +125oC, -55oC 120 - kV/V

-AVOL VOUT = 0V and -10V,

RL = 2kΩ4+25

oC 120 - kV/V

5, 6 +125oC, -55oC 120 - kV/V

Common Mode

Rejection Ratio +CMRR ∆VCM = +10V,

V+ = +5V, V- = -25V,

VOUT = -10V

1+25

oC 106 - dB

2, 3 +125oC, -55oC 106 - dB

-CMRR ∆VCM = -10V,

V+ = +25V, V- = -5V,

VOUT = +10V

1+25

oC 106 - dB

2, 3 +125oC, -55oC 106 - dB

Output Voltage

Swing +VOUT RL = 600Ω4+25

oC10-V

5, 6 +125oC, -55oC10 - V

-VOUT RL = 600Ω4+25

oC--10V

5, 6 +125oC, -55oC--10V

Output Current +IOUT VOUT = -10V 4 +25oC15-mA

-IOUT VOUT = +10V 4 +25oC--15mA

+IBI–B

-----------------------------





Spec Number 511016-883

3Spec Number 511016-883

HA-5135/883

Quiescent Power

Supply Current +ICC VOUT = 0V, IOUT =

0mA 1+25

oC-1.7mA

2, 3 +125oC, -55oC-1.7mA

-ICC VOUT = 0V, IOUT =

0mA 1+25

oC-1.7-mA

2, 3 +125oC, -55oC-1.7 - mA

Power Supply

Rejection Ratio +PSRR ∆VSUP = 10V,

V+ = +5V, V- = -15V,

V+ = +15V, V- = -15V

1+25

oC94-dB

2, 3 +125oC, -55oC94 - dB

-PSRR ∆VSUP = 10V,

V+ = +15V, V- = -5V,

V+ = +15V, V- = -15V

1+25

oC94-dB

2, 3 +125oC, -55oC94 - dB

Offset Voltage

Adjustment +VIOAdj Note 1 1 +25oCV

IO-1 - mV

2, 3 +125oC, -55oCV

IO-1 - mV

-VIOAdj Note 1 1 +25oCV

IO+1 - mV

2, 3 +125oC, -55oCV

IO+1 - mV

NOTES:

1. Offset adjustment range is [VIO (Measured ±1mV] minimum referred to output. This test is for functionality only to assure adjustment

through 0V.

2. The input stage has series 500Ω resistors along with back to back diodes. T his provides large differential input voltage protection for a

slight increase in noise voltage.

TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS

Device Tested at: VSUPPLY = ±15V, RSOURCE = 50Ω, RLOAD = 2kΩ, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified.

PARAMETERS SYMBOL CONDITIONS GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

Slew Rate +SR VOUT = -3V to +3V,

VIN S.R. ≤ 25V/µs7+25

oC0.5-V/µs

-SR VOUT = +3V to -3V,

VIN S.R. ≤ 25V/µs7+25

oC0.5-V/µs

TABLE 3. ELECTRICAL PERFORMANCE CHARACTE RISTICS

Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified.

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

UNITSMIN MAX

Average Offset Voltage

Drift VIOTC VCM = 0V 1 -55oC to +125oC- 1.3µV/oC

Differential Input

Resistance RIN VCM = 0V 1 +25oC20-MΩ

Average Offset Current

Drift IIOTC Versus Temperature

VCM = 0V 1-55

oC to +125oC - 40 pA/oC

Average Bias Current Drift IBTC Versus Temperature

VCM = 0V 1-55

oC to +125oC - 40 pA/oC

Input Noise Voltage

Density ENRS = 20Ω, fO = 1kHz 1 +25oC - 11 nV/√Hz

TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Tested at: VSUPPLY = ±15V , RSOURCE = 50Ω, RLOAD = 100kΩ, VOUT = 0V, Unless Otherwise Specified.

PARAMETERS SYMBOL CONDITIONS GROUP A

SUBGROUPS TEMPERATURE

LIMITS

UNITSMIN MAX

4Spec Number 511016-883

HA-5135/883

Input Noise Current

Density INRS = 2MΩ, fO = 1kHz 1 +25oC-0.4pA/√Hz

Unity Gain Bandwidth UGBW VOU T = ±100mV,

fO at -3dB 1+25

oC 600 - kHz

Full Power Bandwidth FPBW VPEAK = 10V 1, 2 +25oC8-kHz

Minimum Closed Loop

Stable Gain CLSG RL = 2kΩ, CL = 50pF 1 -55oC to +125oC+1-V/V

Output Resistance ROUT Open Loop 1 +25oC-80Ω

Power Consumption PC VOUT = 0V, IOUT =

0mA 1, 3 -55oC to +125oC- 51 mW

NOTES:

1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These param-

eters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization

based upon data from multiple production runs which reflect lot to lot and within lot variation.

2. Full Power Bandwidth guarantee based on Slew Rate meas urem ent using FPBW = Slew Rate/(2πVPEAK).

3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.)

TABL E 4. ELECT R I CA L TES T REQ U I R EM ENTS

MIL-STD-883 TEST REQUIREMENTS SUBGROUPS (SEE TABLES 1 AND 2)

Interim Electrical Paramet ers (Pre Burn-In) 1

Final Electrical Test Parameters 1 (Note 1), 2, 3, 4, 5, 6, 7

Group A Test Requirements 1, 2, 3, 4, 5, 6, 7

Groups C and D Endpoints 1

NOTE:

1. PDA applies to Subgroup 1 only.

TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued)

Device Characterized at: VSUPPLY = ±15V, RLOAD = 2kΩ, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified.

PARAMETERS SYMBOL CONDITIONS NOTES TEMPERATURE

LIMITS

UNITSMIN MAX

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time without

notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and

reliable . However, no responsibility is assumed by Intersil or it s subsidiaries for its use; nor for any infringements of patent s or othe r rights of thi rd part ies which may resu lt

from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

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HA-5135/883

Die Characteristics

DIE DIMENSIONS:

72 x 103 x 19 mils ± 1 mils

1840 x 2620 x 483µm ± 25.4µm

METALLIZATION:

Type: Al, 1% Cu

Thickness: 16k Å ± 2kÅ

GLASSIVATION:

Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.)

Silox Thickness: 12kÅ ± 2kÅ

Nitride Thickness: 3.5kÅ ± 1.5kÅ

WORST CASE CURRENT DENSITY:

6.0 x 104A/cm2

SUBSTRATE POTENTIAL (Powered Up): V-

TRANSISTOR COUNT: 71

PROCESS: Bipolar Dielectric Isolation

Metalliza ti on Mask Layout

HA-5135/883

BAL1 V+ OUT BAL1

V-+IN-IN

BAL2

Spec Number 511016-883