MAXIMUM RATINGS: (TC=25°C) SYMBOL 2N6211 2N6212 2N6213 UNITS
Collector-Base Voltage VCBO 275 350 400 V
Collector-Emitter Voltage VCEO 225 300 350 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 2.0 A
Peak Collector Current ICM 5.0 A
Continuous Base Current IB 1.0 A
Power Dissipation PD 35 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance JC 5.0 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
2N6211 2N6212 2N6213
SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX UNITS
ICEV V
CE=250V, VBE=1.5V - 0.5 - - - - mA
ICEV V
CE=315V, VBE=1.5V - - - 0.5 - - mA
ICEV V
CE=360V, VBE=1.5V - - - - - 0.5 mA
ICEV V
CE=250V, VBE=1.5V, TC=100°C - 5.0 - - - - mA
ICEV V
CE=315V, VBE=1.5V, TC=100°C - - - 5.0 - - mA
ICEV V
CE=360V, VBE=1.5V, TC=100°C - - - - - 5.0 mA
ICEO V
CE=150V - 5.0 - 5.0 - 5.0 mA
IEBO V
EB=6.0V - 1.0 - 0.5 - 0.5 mA
BVCEV IC=50mA, VBE=1.5V, L=10mH 275 - 350 - 400 - V
BVCER IC=50mA, RBE=50Ω 250 - 325 - 375 - V
BVCEO IC=50mA 225 - 300 - 350 - V
BVEBO IE=1.0mA 6.0 - - - - - V
BVEBO IE=0.5mA - - 6.0 - 6.0 - V
VCE(SAT) IC=1.0A, IB=125mA - 1.4 - 1.6 - 2.0 V
VBE(SAT) IC=1.0A, IB=125mA - 1.4 - 1.4 - 1.4 V
hFE VCE=2.8V, IC=1.0A 10 100 - - - -
hFE VCE=3.2V, IC=1.0A - - 10 100 - -
hFE VCE=4.0V, IC=1.0A - - - - 10 100
2N6211
2N6212
2N6213
SILICON
PNP POWER TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N6211, 2N6212,
and 2N6213 are silicon PNP transistors designed
for high speed switching and high voltage amplifier
applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R3 (11-November 2015)
www.centralsemi.com
2N6211
2N6212
2N6213
SILICON
PNP POWER TRANSISTORS
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
ELECTRICAL CHARACTERISTICS - Continued: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
fT VCE=10V, IC=200mA, f=5.0MHz 20 MHz
Cob VCB=10V, IE=0, f=1.0MHz 220 pF
tr VCC=200V, IC=1.0A, IB1=IB2=125mA 0.6 μs
ts VCC=200V, IC=1.0A, IB1=IB2=100mA 2.5 μs
tf VCC=200V, IC=1.0A, IB1=IB2=125mA 0.6 μs
IS/b* VCE=40V 875 mA
*Pulsed: 1.0s non-repetitive pulse.
www.centralsemi.com
R3 (11-November 2015)
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