SIEMENS BCR 146 NPN Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (Ry=47kQ, Roa=22kQ) VPSO516! Type Marking |Ordering Code [Pin Configuration Package BCR 146 WLs Q62702-C2260 |1=B 2 =E 3=C SOT-23 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEO 50 Vv Collector-base voltage Vopo 50 Emitter-base voltage VeBo 10 {nput on Voltage Viton) 50 DC collector current Ie 70 mA Total power dissipation, Tg = 102C Prot 200 mw Junction temperature yj 150 C Storage temperature Tetg_ ~ 65 ...+ 150 Thermal Resistance Junction ambient 7 Rina < 350 KAW Junction - soidering point Athus <$ 240 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6om? Cu Semiconductor Group 655 11.96 SIEMENS BCR 146 Electrical Characteristics at T,=25C, unless otherwise specified Parameter Symbol Values Unit min. |typ. |max. DC Characteristics Collector-emitter breakdown voltage Viaryceo Vv {co = 100 PA, ip = 0 50 - - Collector-base breakdown voltage ViprycBo Io = 10 pA, fp =9 50 - - Collector cutoff current IcBo nA Vep = 40 V, fe =0 - - 100 Emitter cutoff current lEBO yA Vep = 10V, lo =0 - - 220 DC current gain hee - Ig = 5 MA, Vop=5V 50 - - Collector-emitter saturation voltage 1) VocEsat Vv fo = 10 mA, fg =0.5 mA - - 0.3 Input off voltage Virot lg = 100 PA, Veg = 5 V 1.2 - 2.6 Input on Voltage Vion) lo =2 mA, Voge = 0.3 V 1.5 - 4 Input resistor Ry 32 47 62 kQ Resistor ratio Fiy/Ro 1.92 2.14 2.36 - AC Characteristics Transition frequency fr MHz lo = 10 MA, Voge = 5 V, f= 100 MHz - 150 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300ns; D < 2% Semiconductor Group 656 11.96 SIEMENS BCR 146 DC Current Gain hee = f (lc) Collector-Emitter Saturation Voltage Voge = 5V (common emitter configuration) VoEsat = Alc), Ore = 20 10? 161 10 9.0 0.2 0.4 0.6 v 10 > Mesa Input on Voltage Vion) = A/c) Input off voltage Vio) = Alc) Veg = 0.3V (common emitter configuration) Voge = 5V (common emitter configuration) 40? ' 10" 10 10-7 <> Yin Semiconductor Group 657 11.96 SIEMENS BCR 146 Total power dissipation Pi, = f(T"; Ts) * Package mounted on epoxy 300 mw Prot 200 7 \ | 1 \ ca \\ \ 0G | tot bt td 0 20 40 60 80 100 120 C 150 we Ty Ts Permissible Pulse Load Aynys = Xtp) Permissible Pulse Load Piotmax / Protoc = Alp) 103 403 KW Pais 492 P, owl Mt 401 1 101 ll UT Tin Taare Semiconductor Group 658 11.96