TESTING VDE (Reinforced type)(Standard type)
1
2
3
6
5
4
Controls low-level input
signals.
Controls load voltage 60V
to 600V.
mm inch
8.8
.346
6.4
.252
3.9
.154
8.8
.346
6.4
.252
3.6
.142
FEATURES
1. Controls low-level analog signals
PhotoMOS relays feature extremely low
closed-circuit offset voltage to enable
control of low-level analog signals without
distortion.
2. Control with low-level input signals
3. Controls various types of loads such
as relays, motors, lamps and sole-
noids.
4. Optical coupling for extremely high
isolation
Unlike mechanical relays, the PhotoMOS
relay combines LED and optoelectronic
device to transfer signals using light for
extremely high isolation.
5. Eliminates the need for a counter
electromotive force protection diode in
the drive circuits on the input side
6. Stable on resistance
7. Low-level off state leakage current
8. Eliminates the need for a power sup-
ply to drive the power MOSFET
A power supply used to drive the power
MOSFET is unnecessary because of the
built-in optoelectronic device. This results
in easy circuit design and small PC board
area.
9. Low thermal electromotive force
(Approx. 1
µ
V)
TYPICAL APPLICATIONS
• High-speed inspection machines
• Telephone equipment
• Data communication equipment
• Computer
TYPES
*Indicate the peak AC and DC values.
Note: For space reasons, the SMD terminal shape indicator “A” and the package type indicator “X” and “Z” are omitted from the seal.
Type I/O isolation
Output rating*
Part No.
Packing quantity
Through hole
terminal Surface-mount terminal
Load
voltage
Load
current Tube packing style
Tape and reel packing style
Tube Tape and reel
Picked from the
1/2/3-pin side
Picked from the
4/5/6-pin side
AC/DC Standard 1,500 V AC
60V 550 mA AQV212 AQV212A AQV212AX AQV212AZ
1 tube contains
50 pcs.
1 batch contains
500 pcs.
1,000 pcs.
100 V 320 mA AQV215 AQV215A AQV215AX AQV215AZ
200 V 180 mA AQV217 AQV217A AQV217AX AQV217AZ
350 V 130 mA AQV210 AQV210A AQV210AX AQV210AZ
400 V 120 mA AQV214 AQV214A AQV214AX AQV214AZ
600 V 50 mA AQV216 AQV216A AQV216AX AQV216AZ
Reinforced 5,000 V 400 V 120 mA AQV214H AQV214HA AQV214HAX AQV214HAZ
RATING
1. Absolute maximum ratings (Ambient temperature: 25
°
C 77
°
F)
Item Sym-
bol
Type of
connec-
tion
AQV212(A) AQV215(A) AQV217(A) AQV210(A) AQV214(A) AQV216(A)
AQV214H(A)
Remarks
Input
LED forward current I
F
50 mA
LED reverse voltage V
R
5 V
Peak forward current I
FP
1 A f = 100 Hz, Duty factor = 0.1%
Power dissipation P
in
75 mW
Output
Load voltage (peak AC) V
L
60 V 100 V 200 V 350 V 400 V 600 V 400 V
Continuous load
current I
L
A 0.55 A 0.32 A 0.18 A 0.13 A 0.12 A 0.05 A 0.12 A A connection: Peak AC, DC;
B, C connection: DC
B 0.65 A 0.42 A 0.22 A 0.15 A 0.13 A 0.06 A 0.13 A
C 0.80 A 0.60 A 0.30 A 0.17 A 0.15 A 0.08 A 0.15 A
Peak load current I
peak
1.2 A 0.96 A 0.54 A 0.4 A 0.3 A 0.15 A 0.3 A A connection: 100 ms (1 shot),
V
L
=DC
Power dissipation P
out
500 mW
Total power dissipation P
T
550 mW
I/O isolation voltage V
iso
1,500 V AC
5,000 V AC
Temperature
limits
Operating T
opr
–40
°
C to +85
°
C –40
°
F to +185
°
FNon-condensing at low temp.
Storage T
stg
–40
°
C to +100
°
C –40
°
F to +212
°
F
GU PhotoMOS
(AQV21
❍
,
AQV214H)
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU PhotoMOS (AQV21
❍
, AQV214H)
2. Electrical characteristics (Ambient temperature: 25
°
C 77
°
F)
Item Sym-
bol
Type of
connec-
tion**
AQV212(A) AQV215(A) AQV217(A) AQV210(A) AQV214(A) AQV216(A)
AQV214H(A)
Condition
Input
LED operate current Typical I
Fon
—1 mA 1 mA 1 mA 1 mA 1 mA 1 mA 1.3 mA I
L
= Max.
Maximum 3 mA 3 mA 3 mA 3 mA 3 mA 3 mA 3 mA
LED turn off current Minimum I
Foff
—0.4 mA 0.4 mA 0.4 mA 0.4 mA 0.4 mA 0.4 mA 1.2 mA I
L
= Max.
Typical 0.79 mA 0.79 mA 0.79 mA 0.79 mA 0.79 mA 0.79 mA 0.79 mA
LED dropout voltage Typical V
F
—1.25 V (1.14 V at I
F
= 5 mA) I
F
= 50 mA
Maximum 1.5 V
Output
On resistance
Typical R
on
A0.83
Ω
2.3
Ω
11.0
Ω
23
Ω
30
Ω
70
Ω
30
Ω
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 2.5
Ω
4.0
Ω
15.0
Ω
35
Ω
50
Ω
120
Ω
50
Ω
Typical R
on
B0.44
Ω
1.15
Ω
5.5
Ω
11.5
Ω
22.5
Ω
55
Ω
22.5
Ω
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 1.25
Ω
2.0
Ω
7.5
Ω
17.5
Ω
25
Ω
100
Ω
25
Ω
Typical R
on
C0.25
Ω
0.6
Ω
2.8
Ω
6.0
Ω
11.3
Ω
28
Ω
11.3
Ω
I
F
= 5 mA
I
L
= Max.
Within 1 s on time
Maximum 0.63
Ω
1.0
Ω
3.8
Ω
8.8
Ω
12.5
Ω
50
Ω
12.5
Ω
Output capacitance Typical C
out
A 150 pF 110 pF 70 pF 45 pF 45 pF 45 pF 45 pF
I
F
= 0 mA
V
B
= 0 V
f = 1 MHz
Off state leakage current Maximum — — 1
µ
AI
F
= 0 mA
V
L
= Max.
Transfer characteristics
Switching
speed
Turn on
time*
Typical T
on
—0.65 ms 0.6 ms 0.25 ms 0.25 ms 0.21 ms 0.28 ms 0.6 ms I
F
= 5 mA**
l
L
=Max.
Maximum 2 ms 2 ms 1.0 ms 0.5 ms 0.5 ms 0.5 ms 0.8 ms
Turn off
time*
Typical T
off
—0.08 ms 0.06 ms 0.05 ms 0.05 ms 0.05 ms 0.04 ms 0.05 ms I
F
= 5 mA
I
L
= Max.
Maximum 0.2 ms 0.2 ms 0.2 ms 0.2 ms 0.2 ms 0.2 ms 0.2 ms
I/O capacitance Typical C
iso
—0.8 pF f = 1 MHz
V
B
= 0 V
Maximum 1.5 pF
Initial I/O isolation
resistance Minimum R
iso
— 1,000 M
Ω
500 V DC
Note: Recommendable LED forward current
Standard type: 5 mA
Reinforced type: 5 to 10 mA
*Turn on/Turn off time
■
■
■
Ton
Input
Output 10%
90%
Toff
REFERENCE DATA
1-(1). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40
°
C to +85
°
C
–40
°
F to +185
°
F
Type of connection: A
1-(2). Load current vs. ambient temperature
characteristics
Allowable ambient temperature: –40
°
C to +85
°
C
–40
°
F to +185
°
F
Type of connection: A
2-(1). On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Load voltage: Max. (DC)
Continuous load current: Max. (DC)
0
0.2
0.3
0.4
0.5
0.7
0.6
0 204060
8085
100–40 –20
0.1
Ambient temperature, °C
Load current, A
AQV212
AQV215
AQV217
0
40
60
80
100
140
120
0204060
–20 8085 100–40
AQV210
20
AQV214(H)
AQV216
Load current, mA
Ambient temperature, °C
0
1
2
3
4
–40
5
0–20 20 40 60 8085
AQV212
AQV215
On resistance, Ω
Ambient temperature, °C
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU PhotoMOS (AQV21
❍
, AQV214H)
2-(2). On resistance vs. ambient temperature
characteristics
Measured portion: between terminals 4 and 6;
LED current: 5 mA; Load voltage: Max. (DC)
Continuous load current: Max. (DC)
3. Turn on time vs. ambient temperature
characteristics
LED current: 5 mA;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
4. Turn off time vs. ambient temperature
characteristics
LED current: 5 mA;
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
20
40
60
80
–40
120
0–20 20 40 60 8085
AQV214(H)
100
AQV210
AQV217
On resistance, Ω
Ambient temperature, °C
AQV216
0
1.0
1.5
–40
2.0
0–20 20 40 60 8085
0.5
AQV212,AQV215
AQV216,AQV210,AQV217
AQV214
AQV214H
Turn on time, ms
Ambient temperature, °C
0
0.1
0.2
0.3
0.4
–40 0–20 20 40 60 8085
AQV214
AQV212,215
AQV216,210,217
AQV214H
Turn off time, ms
Ambient temperature, °C
5-(1). LED operate current vs.ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
5-(2). LED operate current vs.ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
6-(1). LED turn off current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
0
1
2
3
4
–40
5
0–20 20 40 60 8085
LED operate on current, mA
Ambient temperature, °C
AQV212
AQV215
AQV217
AQV210
AQV214
AQV216
0
1
2
3
4
–40
5
0–20 20 40 60 8085
AQV214H
LED operate on current, mA
Ambient temperature, °C
0
1
2
3
4
–40
5
0–20 20 40 60 8085
LED turn off current, mA
Ambient temperature, °C
6-(2). LED turn off current vs. ambient
temperature characteristics
Load voltage: Max. (DC);
Continuous load current: Max. (DC)
7. LED dropout voltage vs. ambient
temperature characteristics
Sample: All types
LED current: 5 to 50 mA
8-(1). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
0
1
2
3
4
–40
5
0–20 20 40 60 8085
AQV214H
LED turn off current, mA
Ambient temperature, °C
0
1.0
1.1
1.2
1.3
–40 0–20 20 40 60 8085
1.4
50mA
30mA
20mA
10mA
5mA
1.5
LED dropout voltage, V
Ambient temperature, °C
1.00.60.2
–1.0 –0.6 –0.2
–0.5
–0.4
–0.1
0.5
0.4
0.1
0.2
0.3
–0.2
–0.3
–0.4–0.8
0.4 0.8
AQV212
AQV215
Voltage, V
Current, A
8-(2). Current vs. voltage characteristics of
output at MOS portion
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
9. Off state leakage current vs. load voltage
characteristics
Measured portion: between terminals 4 and 6;
Ambient temperature: 25°C 77°F
10-(1). Turn on time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
531
–5–3–1
–200
–160
–40
200
160
40
80
120
–80
–120
–2–4
24
AQV217
AQV210
AQV216
AQV214(H)
Voltage, V
Current, mA
060 100
10–3
10–6
10–9
10–12
AQV216
20 40 80
AQV214(H)
Load voltage, V
Off state leakage current, A
0
0.2
0.4
0.6
0.8
1.2
1.0
10 20 30 40 50 60
AQV210,AQV216,AQV217
AQV212,AQV215
AQV214
LED forward current, mA
Turn on time, ms
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
GU PhotoMOS (AQV21❍, AQV214H)
10-(2). Turn on time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: 400 V (DC); Continuous load current:
120 mA (DC); Ambient temperature: 25°C 77°F
11. Turn off time vs. LED forward current
characteristics
Measured portion: between terminals 4 and 6;
Load voltage: Max. (DC); Continuous load current:
Max. (DC); Ambient temperature: 25°C 77°F
12. Output capacitance vs. applied voltage
characteristics
Measured portion: between terminals 4 and 6;
Frequency: 1 MHz; Ambient temperature: 25°C 77°F
0
0.5
1.0
1.5
2.5
2.0
10 20 30 40 50 60
AQV214H
LED forward current, mA
Turn on time, ms
0
0.02
0.04
0.08
0.06
10 20 30 40
0.12
50
0.10 AQV212
AQV215
AQV216
AQV210,214,217
AQV214H
LED forward current, mA
Turn off time, ms
0
50
100
200
10 20 30 40 50
150
0
AQV212
AQV215
AQV217
AQV214(H),AQV216,AQV210
Applied voltage,V
Output capacitance, pF
All Rights Reserved © COPYRIGHT Matsushita Electric Works, Ltd.
