2SAR293P5 Datasheet
llAbsolute maximum ratings (Ta = 25°C)
Parameter Symbol Values Unit
Collector-base voltage VCBO -30 V
Collector-emitter voltage VCEO -30 V
Emitter-base voltage VEBO -6 V
Collector current IC-1 A
ICP*1 -2 A
Power dissipation PD*2 0.5 W
PD*3 2.0 W
Junction temperature Tj150 ℃
Range of storage temperature Tstg -55 to +150 ℃
llElectrical characteristics (Ta = 25°C)
Parameter Symbol Conditions Values Unit
Min. Typ. Max.
Collector-base breakdown
voltage BVCBO IC = -10μA -30 - - V
Collector-emitter breakdown
voltage BVCEO IC = -1mA -30 - - V
Emitter-base breakdown voltage BVEBO IE = -10μA -6 - - V
Collector cut-off current ICBO VCB = -30V - - -100 nA
Emitter cut-off current IEBO VEB = -6V - - -100 nA
Collector-emitter saturation voltage VCE(sat)*4 IC = -500mA, IB = -25mA - -150 -350 mV
DC current gain hFE VCE = -2V, IC = -100mA 270 - 680 -
Transition frequency fT*4 VCE = -2V, IE = 100mA,
f = 100MHz - 320 - MHz
Output capacitance Cob
VCB = -10V, IE = 0A,
f = 1MHz - 7 - pF
Turn-On time ton IC = -500mA,
IB1 = -25mA,
IB2 = 25mA,
VCC ⋍ -5V,
RL = 10Ω
See test circuit
- 60 - ns
Storage time tstg - 160 - ns
Fall time tf- 50 - ns
*1 Pw=10ms Sigle Pulse
*2 Each terminal mounted on a reference land.
*3 Mounted on a ceramic board(40×40×0.7 mm) .
*4 Pulsed
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved. 2/6 20150724 - Rev.001