DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Product Summary RDS(ON) MAX ID MAX TA = +25C 35m @ VGS = 10V 5.5A 45m @ VGS = 4.5V 4.9A BVDSS 30V Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications DC Motor Control DC-AC Inverters Case: V-DFN3020-8 (Type N) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.011 grams (Approximate) V-DFN3020-8 (Type N) D1 Pin 1 8 S1 1 G1 2 S2 3 G2 4 D2 D1 7 6 G1 G2 D2 5 S1 Bottom View Pin Configuration Bottom View S2 Q1 N-Channel MOSFET Q2 N-Channel MOSFET Equivalent Circuit Ordering Information (Note 4) Part Number DMN3035LWN-7 DMN3035LWN-13 Notes: Case V-DFN3020-8 (Type N) V-DFN3020-8 (Type N) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/quality/lead_free.html. Marking Information V-DFN3020-8 (Type N) N3 Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMN3035LWN Document number: DS37528 Rev. 3 - 2 Mar 3 N3 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) YM 2018 F Apr 4 2019 G May 5 Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D October 2016 (c) Diodes Incorporated DMN3035LWN Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady TA = +25C State TA = +70C Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Continuous Drain Current (Note 6) VGS = 10V Value 30 20 5.5 4.4 1 30 ID IS IDM IAS EAS Unit V V A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Symbol TA = +25C TA = +70C Steady State t<10s TA = +25C TA = +70C Steady State t<10s PD RJA PD RJA Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics RJC TJ, TSTG Units W C/W W C/W C/W C (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: Value 0.77 0.49 162 116 1.78 1.10 71 50 10.7 -55 to +150 Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 1.0 100 V A nA VGS = 0V, ID = 250A VDS = 30V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) 1.0 26 34 2.0 V 35 45 m VDS = VGS, ID = 250A VGS = 10V, ID = 4.8A VGS = 4.5V, ID = 4.3A VGS = 0V, IS = 1A RDS(ON) VSD 0.75 1.1 V Ciss Coss Crss Rg Qg Qg Qgs Qgd 399 57 50 1.36 4.5 9.9 1.2 1.8 3.0 3.3 10.6 2.0 7.9 2.4 pF pF pF nC nC nC nC ns ns ns ns ns nC tD(ON) tR tD(OFF) tF tRR QRR Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, ID = 5.8A VDD = 15V, VGS = 10V, RL = 2.6, RG = 3 IF = 4.8A, di/dt = 100A/s IF = 4.8A, di/dt = 100A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3035LWN Document number: DS37528 Rev. 3 - 2 2 of 7 www.diodes.com October 2016 (c) Diodes Incorporated DMN3035LWN 30.0 1 0.8 20.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS=5V VGS=10V 25.0 VGS=8.0V 15.0 VGS=5.0V VGS=4.5V 10.0 VGS=4.0V +150 +125 0.4 +25 0.2 5.0 VGS=2.0V VGS=2.5V -55 VGS=3.0V 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.08 0.07 0.06 0.05 VGS=4.5V 0.04 0.03 0.02 VGS=10V 0.01 0 5 10 15 0.5 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) +85 0.6 20 25 0.18 0.16 0.14 0.12 0.1 0.08 0.06 ID=4.8A 0.04 0.02 ID=4.3A 0 30 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) VGS=10V +150 0.04 +125 +85 0.03 +25 0.02 -55 0.01 0 5 10 15 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN3035LWN Document number: DS37528 Rev. 3 - 2 3 of 7 www.diodes.com 3 0.2 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 0.05 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 10 1.8 1.6 VGS=10V, ID=4.8A 1.4 1.2 1 VGS=4.5V, ID=4.3A 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Temperature October 2016 (c) Diodes Incorporated 0.08 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (W) DMN3035LWN 0.07 0.06 0.05 VGS=4.5V, ID=4.3A 0.04 0.03 VGS=10V, ID=4.8A 0.02 0.01 1.9 1.7 1.5 ID=1mA 1.3 ID=250mA 1.1 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs JunctionTemperature 10000 20 15 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) VGS=0V TA=+150 TA=+125 10 TA=+85 5 TA=+25 TA=-55 f=1MHz 1000 Ciss Coss 100 Crss 10 1 0 0 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 5 10 15 20 25 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 10 100 RDS(ON) Limited PW =100s PW = 1ms 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) 150 6 VDS=15V, ID=5.8A 4 10 PW =10s 0.1 2 0 0.01 0 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 11. Gate Charge DMN3035LWN Document number: DS37528 Rev. 3 - 2 4 of 7 www.diodes.com DC 1 TJ(Max)=+150 TA=+25 Single Pulse PW =1s DUT on PW =100ms 1*MRP Board VGS=10V PW =10ms 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 October 2016 (c) Diodes Incorporated DMN3035LWN r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.5 D=0.9 D=0.3 D=0.7 0.1 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RJA(t)=r(t) * RJA RJA=162oC/W Duty Cycle, D=t1/t2 D=Single Pulse 0.001 1E-05 DMN3035LWN Document number: DS37528 Rev. 3 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 October 2016 (c) Diodes Incorporated DMN3035LWN Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN3020-8 (Type N) A3 A1 A Seating Plane D e (Pin #1 ID) L D2 K E L1 E2 b V-DFN3020-8 (Type N) Dim Min Max Typ A 0.77 0.83 0.80 A1 0 0.05 0.02 A3 0.203 b 0.24 0.34 0.29 D 2.95 3.05 3.00 D2 0.84 1.04 0.94 e 0.65 E 1.95 2.05 2.00 E2 0.70 0.90 0.80 L 0.27 0.37 0.32 L1 0.15 0.25 0.20 K 0.68 Z 0.38 All Dimensions in mm Z(4x) Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. V-DFN3020-8 (Type N) X2 C X Dimensions Y C G X X1 X2 Y Y1 Y2 Y3 G X1 Y3 Y1 Y2 DMN3035LWN Document number: DS37528 Rev. 3 - 2 6 of 7 www.diodes.com Value (in mm) 0.650 0.580 0.390 1.040 2.340 0.520 0.900 0.300 2.300 October 2016 (c) Diodes Incorporated DMN3035LWN IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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