PBSS8110X,135 - NEXPERIA

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1. Product profile

1.1 General description

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/

TO-2 43) SMD plastic package.

PNP complement: PBSS9110X.

1.2 Features

SOT89 package

Low collector-emitter saturation voltage VCEsat

High collector current capability: IC and ICM

High efficiency leading to less heat generation

1.3 Applications

Major application segments:

Automotive 42 V power

Telecom infrastructure

Industrial

Peripheral driver:

Driver in low supply voltage applications (e.g. lamps and LEDs)

Inductive load driver (e.g. relays, buzzers and motors)

DC-to-DC converter

1.4 Quick reference data

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

Rev. 02 — 11 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VCEO collector-emitter voltage open base - - 100 V

ICcollector current (DC) - - 1 A

ICM peak collector current single pulse;

tp≤1ms --3 A

RCEsat collector-emitter

saturation resistance IC=1A;

IB=100mA [1] - 165 200 mΩ

Product data sheet Rev. 02 — 11 December 2009 2 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

2. Pinning information

3. Ordering information

4. Marking

[1] * = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

Table 2. Pinning

Pin Description Simplified outline Symbol

1emitter

2 collector

3base

321 sym04

Table 3. Ordering i nformation

Type number Package

Name Description Version

PBSS8110X SC-62 plastic surface mounted package; collector pad for

good heat transfer; 3 leads SOT89

Table 4. Marking codes

Type number Marking code [1]

PBSS8110X *4B

Product data sheet Rev. 02 — 11 December 2009 3 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

5. Limiting values

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VCBO collector-base voltage open emitter - 120 V

VCEO collector-emitter voltage open base - 100 V

VEBO emitter-base voltage open collector - 5 V

ICcollector current (DC) - 1 A

ICM peak collector current single pulse;

tp≤1ms -3A

IBbase current (DC) - 300 mA

Ptot total power dissipation Tamb ≤ 25 °C [1] -0.55W

[2] -1.4W

[3] -2.0W

Tjjunction temperature - 150 °C

Tamb ambient temperature −65 +150 °C

Tstg storage temperature −65 +150 °C

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB; mounting pad for collector 6cm2

(3) FR4 PCB; standard footprint

Fig 1. Power derating curves

amb

(°C)

0 16012040 80

006aaa408

0.8

1.2

0.4

1.6

2.0

tot

(W)

(1)

(2)

(3)

Product data sheet Rev. 02 — 11 December 2009 4 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

6. Thermal characteristics

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

Table 6. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] - - 227 K/W

[2] --89K/W

[3] --63K/W

Rth(j-sp) thermal resistance from

junction to solder point --16K/W

FR4 PCB; standard footprint

Fig 2. Transient thermal impeda nce from junction to ambient as a function of pulse time; typical values

006aaa409

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

duty cycle =

Product data sheet Rev. 02 — 11 December 2009 5 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

FR4 PCB; mounting pad for collector 6cm2

Fig 3. Transient thermal impeda nce from junction to ambient as a function of pulse time; typical values

Ceramic PCB, Al2O3, standard footprint

Fig 4. Transient thermal impeda nce from junction to ambient as a function of pulse time; typical values

006aaa411

102

103

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

duty cycle =

006aaa410

102

Zth(j-a)

(K/W)

10−1

10−51010−2

10−4102

10−1

tp (s)

10−3103

0.75

0.5

0.33

0.2

0.1

0.05

0.02

0.01

duty cycle =

Product data sheet Rev. 02 — 11 December 2009 6 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

7. Characteristics

[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.

Table 7. Characteristics

Tamb = 25

C unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

ICBO collector-base cut-off

current VCB =80V; I

E= 0 A - - 100 nA

VCB =80V; I

E=0A;

Tj= 150 °C--50μA

ICES collector-emitter

cut-off current VCE =80V; V

BE = 0 V - - 100 nA

IEBO emitter-base cut-off

current VEB =4V; I

C= 0 A - - 100 nA

hFE DC current gain VCE =10V; I

C=1mA 150 - -

VCE =10V; I

C= 250 mA 150 - 500

VCE =10V; I

C= 500 mA [1] 100 - -

VCE =10V; I

C=1A [1] 80 - -

VCEsat collector-emitter

saturation voltage IC=100mA; I

B=10mA --40mV

IC=500mA; I

B=50mA --120mV

IC=1A; I

B= 100 mA [1] --200mV

RCEsat collector-emitter

saturation resistance IC=1A; I

B= 100 mA [1] - 165 200 mΩ

VBEsat base-emitter

saturation voltage IC=1A; I

B= 100 mA - - 1.05 V

VBEon base-emitter turn-on

voltage VCE =10V; I

C=1A --0.9V

tddelay time VCC =10V; I

C=0.5A;

IBon = 0.025 A; IBoff =−0.025 A -25-ns

trrise time - 220 - ns

ton turn-on time - 245 - ns

tsstorage time - 365 - ns

tffall time - 185 - ns

toff turn-off time - 550 - ns

fTtransition frequency VCE =10V; I

C=50mA;

f=100MHz 100 - - MHz

Cccollector capacit ance VCB =10V; I

E=i

e=0A;

f=1MHz --7.5pF

Product data sheet Rev. 02 — 11 December 2009 7 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

VCE =10V

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

VCE =10V

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 5. DC current gain as a function of collector

current; typical values Fig 6. Base-emitter voltage as a function of collector

current; typical values

IC/IB =10

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

IC/IB = 20; Tamb = 25 °C

Fig 7. Collector-emitter saturation voltage as a

function of collector current; typical values Fig 8. Collector- em itter saturatio n voltage as a

function of collector current; typical values

001aaa497

200

400

600

hFE

IC (mA)

10−1104

103

110

(1)

(2)

(3)

001aaa495

VBE

(mV)

IC (mA)

10−1104

103

110

(1)

(2)

(3)

600

400

800

1000

200

(1)

(2)

(3)

001aaa504

IC (mA)

10−1104

103

110

10−1

VCEsat

(V)

10−2

001aaa505

IC (mA)

10−1104

103

110

102

103

VCEsat

(mV)

Product data sheet Rev. 02 — 11 December 2009 8 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

IC/IB = 50; Tamb = 25 °CI

C/IB =10

(1) Tamb = −55 °C

(2) Tamb = 25 °C

(3) Tamb = 100 °C

Fig 9. Collector-emitter saturation voltage as a

function of collector current; typical values Fig 10. Base-emitter saturatio n vo ltage as a function

of collector current; typical values

IC/IB = 20; Tamb = 25 °CI

C/IB=10

(1) Tamb = 100 °C

(2) Tamb = 25 °C

(3) Tamb = −55 °C

Fig 11. Base-emitter saturation voltage as a function

of collector current; typical values Fig 12. Collector-emitter saturation resistance as a

function of collector current; typical values

001aaa506

103

102

104

VCEsat

(mV)

IC (mA)

10−1104

103

110

001aaa498

1200

800

1000

400

600

VBEsat

(mV)

200

IC (mA)

10−1104

103

110

(1)

(2)

(3)

001aaa499

1200

1000

800

600

VBEsat

(mV)

400

IC (mA)

10−1104

103

110

001aaa501

IC (mA)

10−1104

103

110

102

103

RCEsat

(Ω)

10−1

(1)

(2)

(3)

Product data sheet Rev. 02 — 11 December 2009 9 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

IC/IB = 20; Tamb = 25 °CI

C/IB = 50; Tamb = 25 °C

Fig 13. Collector-emitter saturation resistance as a

function of collector current; typical values Fig 14. Collector-emitter saturation resistance as a

function of collector current; typical values

Tamb = 25 °C

Fig 15. Collector current as a function of collector-emitter voltage; typical values

001aaa502

IC (mA)

10−1104

103

110

102

103

RCEsat

(Ω)

10−1

001aaa503

IC (mA)

10−1104

103

110

102

103

RCEsat

(Ω)

10−1

VCE (V)

054231

001aaa496

0.8

1.2

0.4

1.6

(A)

31.5

24.5

17.5

10.5

3.5

IB (mA) = 35

Product data sheet Rev. 02 — 11 December 2009 10 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

8. Test information

Fig 16. BISS transistor switching time definition

VCC =10V; I

C= 0.5 A; IBon = 0.025 A; IBoff =−0.025 A

Fig 17. Test circuit for swit ch ing times

006aaa003

IBon (100 %)

input pulse

(idealized waveform)

IBoff

90 %

10 %

IC (100 %)

ton

90 %

10 %

output pulse

(idealized waveform)

toff

DUT

mlb826

(probe)

450 Ω

(probe)

450 Ω

oscilloscope oscilloscope

VBB

VCC

Product data sheet Rev. 02 — 11 December 2009 11 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

9. Package outline

10. Packing information

[1] For further information and the availability of packing methods, see Section 15.

Fig 18. Package outline SOT89 (SC-62/TO-243)

06-08-29Dimensions in mm

4.6

4.4

1.8

1.4

1.6

1.4

1.2

0.8

1.5

0.48

0.35

0.44

0.23

0.53

0.40

2.6

2.4 4.25

3.75

123

Table 8. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number Package Description Packing quantity

1000 4000

PBSS8110X SOT89 8 mm pitch, 12 mm tape and reel -115 -135

Product data sheet Rev. 02 — 11 December 2009 12 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

11. Soldering

12. Mounting

Reflow soldering is the only recommended soldering method

Fig 19. Reflow soldering footprint SOT 89 (SC-62/TO-243)

msa442

1.00

(3x)

4.85

4.60

1.20

4.75

0.60 (3x)

0.70 (3x)

3.70

3.95

1.20

0.50

1.70

132

0.20

0.85

1.20

1.90

2.00

2.25

solder lands

solder resist

occupied area

solder paste

Dimensions in mm

Fig 20. FR4 PCB, standard footprint Fig 21. FR4 PCB, mounting pad for

collector 6cm2

001aaa234

2.5 mm

5 mm

1.6 mm

0.5 mm

1 mm

3.96 mm

3 mm

2.5 mm

1 mm

32 mm

001aaa235

2.5 mm

5 mm

1.6 mm

0.5 mm

1 mm

3.96 mm

30 mm

32 mm

Product data sheet Rev. 02 — 11 December 2009 13 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

13. Revision history

Table 9. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PBSS8110X_2 20091211 Product data sheet - PBSS8110X_1

Modifications: •This data sheet was changed to reflec t the new company name NXP Semiconductors,

including new legal definitions and disclaimers. No changes were made to the technical

content.

•Figure 5: updated

•Figure 7: VCEsat axis unit amended from mV to V

•Figure 15: updated

•Figure 18 “Package outline SOT89 (SC-62/TO-243)”: updated

•Figure 19 “Reflow so ldering footprint SOT89 (SC-62/TO-243)”: updated

PBSS8110X_1 20050511 Product data sheet - -

Product data sheet Rev. 02 — 11 December 2009 14 of 15

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

14. Legal information

14.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

14.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short dat a sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

14.3 Disclaimers

General — In formation in this document is beli eved to be accurate and

reliable. However, NXP Semiconductors does no t give any repr esenta tions or

warranties, expressed or impli ed, as to the accuracy or completeness of such

information and shall have no liability for th e co nsequences of use of such

information.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, milit ary, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ra tings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other co nditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may af fect device reliability.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/profile/terms, i ncluding those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conflict between inf ormation in this document and such

terms and conditions, the latter will prevail.

No offer to sell or license — Not hing in this document may be interpret ed or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, paten ts or

other industrial or intellectual property right s.

Export control — This document as well as the item(s) described herein

may be subject to export control regulatio ns. Export might require a prior

authorization from national authorities.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

14.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

15. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contain s data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] data sheet Production This document contains the product specification.

NXP Semiconductors PBSS8110X

100 V, 1 A NPN low VCEsat (BISS) transistor

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 December 2009

Document identifier: PBSS8 110X_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

16. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 4

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . 10

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Packing information . . . . . . . . . . . . . . . . . . . . 11

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

12 Mounting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

13 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13

14 Legal information. . . . . . . . . . . . . . . . . . . . . . . 14

14.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14

14.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

14.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14

15 Contact information. . . . . . . . . . . . . . . . . . . . . 14

16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15