ES/FMM5804YD K-Band Power Amplifier MMIC FEATURES *High Output Power; P1dB = 24.5 dBm (Typ.) *High Linear Gain; GL = 17 dB(Typ.) *Frequency Band ; 17.5 - 26.5 GHz *SMT Laminate Package (YD Package) *Impedance Matched Zin/Zout = 50 DESCRIPTION The FMM5804YD is a power amplifier MMIC that contains a four stage amplifier, internally matched, for standard communications band in 17.5 to 26.5GHz frequency range. This product is well suited for P-to-P, Ka-band V-SAT applications. Eudyna's stringent Quality Assurance Program assures the highest reliability and consistent performance. ABSOLUTE MAXIMUM RATING Item Drain-Source Voltage Gate-Source Voltage Input Power Storage Temperature Symbol VDD VGG Pin Tstg RECOMMENDED OPERATING CONDITIONS Item Symbol Dorain-Source Voltage VDD Input Power Pin Operating Case Temperature TC Condition 10 -3 16 -55 to +125 Unit V V dBm O C Recommend <= 6 <= +13 -40 to +85 Unit V dBm O C ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25OC) Item Symbol Frequency Range Output Power at 1dB G.C.P. Power Gain at 1dB G.C.P. Power-added Efficiency at 1dB G.C.P. Drain Current at 1dB G.C.P. Input Return Loss (at Pin=-20dBm) Output Return Loss (at Pin=-20dBm) f P1dB G1dB add IDDRF RLin RLout Limits Unit Min. Typ. Max. 17.5 26.5 GHz 22.5 24.5 dBm 13 16 dB VDD=6V typ. 10 % IDD(DC)=250mA typ. 350 430 mA ZS=ZL=50ohm -15 dB -8 dB G.C.P. : Gain Compression Point Test Conditions Class 0 ESD Note : Based on JEDEC JESD22-A114-C Case Style YD RoHS Compliance Yes Edition 2.0 March. 2009 1 ~ 250V http://www.eudyna.com/ ES/FMM5804YD K-Band Power Amplifier MMIC 30 28 26 24 22 20 18 16 14 12 10 8 Power Added Efficiency vs. Frequency @ VDD=6V, IDD(DC)=250mA - - - P1dB 16 18 20 22 24 26 28 30 Power-Added Efficiency (%) Output Power (dBm) Output Power vs. Frequency @ VDD=6V, IDD(DC)=250mA 32 22 20 18 16 14 12 10 8 6 4 2 0 - - - P1dB 16 18 Frequency (GHz) Pin=-4dBm 0dBm 8dBm 12dBm 4dBm 650 500 20 450 18 400 16 350 14 300 12 250 Drain Current 8 Drain Current (mA) Output Power (dBm) 550 22 200 150 -4 -2 0 2 4 6 22GHz 26GHz 28 30 32 Pin=-4dBm 0dBm 8dBm 12dBm 4dBm -15 -20 IM3 -25 -30 -35 -40 -45 IM5 -50 -55 -60 8 10 12 8 Input Power (dBm) 17.5GHz 26 -10 600 Pout 10 24 IMD Performance vs. Total Output Power @ VDD=6V, IDD(DC)=250mA f=+10MHz, 2-Tone test Intermodulation Distortion (dBc) 28 24 22 Frequency (GHz) Output Power, Drain Current vs. Input Power @ VDD=6V, IDD(DC)=250mA 26 20 10 12 14 16 18 20 22 24 26 2-Tone Total Output Power (dBm) 30GHz 17.5GHz 2 22GHz 26GHz 30GHz ES/FMM5804YD K-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Current @ freq.=22GHz, VDD=6V 24 600 26 550 24 22 500 20 450 18 400 16 350 14 300 12 250 10 Drain Current 8 -4 -2 0 2 4 6 650 225m A 500 20 450 18 400 16 350 14 300 12 200 10 150 8 8 10 12 250m A Drain Current 275m A -2 200mA 24 24 350 14 300 2 4 6 250 22 225m A 250m A 500 20 450 18 400 16 350 14 300 12 200 10 150 8 8 10 12 550 Pout Drain Current 250 200 150 -4 Input Power (dBm) 200mA 275m A 550 16 0 250m A 600 400 -2 225m A 26 18 -4 8 10 12 600 450 8 6 650 20 10 4 28 500 Drain Current 2 650 22 12 0 Output Power, Drain Current vs. Input Power by Drain Current @ freq.=30GHz, VDD=6V Output Power (dBm) Pout 200 Input Power (dBm) Drain Current (mA) Output Power (dBm) 26 250 150 -4 Output Power, Drain Current vs. Input Power by Drain Current @ freq.=26GHz, VDD=6V 28 550 22 Input Power (dBm) 200mA 600 Pout Drain Current (mA) Pout 28 Output Power (dBm) Output Power (dBm) 26 650 Drain Current (mA) 28 Drain Current (mA) Output Power, Drain Current vs. Input Power by Drain Current @ freq.=17.5GHz, VDD=6V -2 0 2 4 6 8 10 12 Input Power (dBm) 275m A 200mA 3 225m A 250m A 275m A ES/FMM5804YD K-Band Power Amplifier MMIC Output Power, Drain Current vs. Input Power by Drain Voltage @ freq.=22GHz, IDD(DC)=250mA Pout 600 26 550 24 22 500 20 450 18 400 16 350 14 300 12 250 Drain Current 10 8 -4 -2 0 2 4 6 650 4V 500 20 450 18 400 16 350 14 300 12 200 10 150 8 8 10 12 5V 150 6V -2 Output Power, Drain Current vs. Input Power by Drain Voltage @ freq.=30GHz, IDD(DC)=250mA 14 300 250 6 Output Power (dBm) 24 350 4 22 4V 5V 500 20 450 18 400 16 350 14 Drain Current 12 200 10 150 8 8 10 12 550 Pout -2 0 2 4 6 8 10 12 Input Power (dBm) 3V 4 250 150 -4 6V 300 200 Input Power (dBm) 3V 6V 550 16 8 5V 600 400 Drain Current 4V 26 18 2 8 10 12 600 450 0 6 650 20 -2 4 28 500 -4 2 650 22 10 0 3V Drain Current (mA) Output Power (dBm) Pout 12 200 Input Power (dBm) 28 24 250 Drain Current -4 Output Power, Drain Current vs. Input Power by Drain Voltage @ freq.=26GHz, IDD(DC)=250mA 26 550 22 Input Power (dBm) 3V 600 Pout 4V 5V 6V Drain Current (mA) 24 28 Output Power (dBm) Output Power (dBm) 26 650 Drain Current (mA) 28 Drain Current (mA) Output Power, Drain Current vs. Input Power by Drain Voltage @ freq.=17.5GHz, IDD(DC)=250mA ES/FMM5804YD K-Band Power Amplifier MMIC P1dB, G1dB vs. Drain Voltage @ IDD(DC)=250mA P1dB, G1dB vs. Drain Current @ VDD=6V 28 28 P1dB 26 P1dB (dBm), G 1dB (dB) P1dB (dBm), G 1dB (dB) 26 24 22 20 18 16 P1dB 24 22 20 18 G1dB 16 G1dB 14 175 14 200 225 250 275 300 2 Drain Current (mA) 17.5GHz 22GHz 26GHz 3 4 5 6 7 Drain Voltage (V) 30GHz 17.5GHz 5 22GHz 26GHz 30GHz ES/FMM5804YD K-Band Power Amplifier MMIC IMD Performance vs. Total Output Power by Drain Current @ freq.=22GHz, VDD=6V f=+10MHz, 2-tone test IMD Performance vs. Total Output Power by Drain Current @ freq.=17.5GHz, VDD=6V f=+10MHz, 2-tone test -10 Intermodulation Distortion (dBc) Intermodulation Distortion (dBc) -10 -15 -20 -25 -30 IM3 -35 -40 IM5 -45 -50 -55 -60 -15 -20 -25 IM3 -30 -35 -40 -45 -50 IM5 -55 -60 8 10 12 14 16 18 20 22 24 26 8 2-tone Total Output Power (dBm) 200m A 225m A 250m A 2-tone Total Output Power (dBm) 275m A 200m A IMD Performance vs. Total Output Power by Drain Current @ freq.=26GHz, VDD=6V f=+10MHz, 2-tone test Intermodulation Distortion (dBc) Intermodulation Distortion (dBc) -20 IM3 -35 -40 -45 IM5 -50 250m A 275m A -10 -15 -30 225m A IMD Performance vs. Total Output Power by Drain Current @ freq.=30GHz, VDD=6V f=+10MHz, 2-tone test -10 -25 10 12 14 16 18 20 22 24 26 -55 -60 -15 -20 IM3 -25 -30 -35 -40 -45 IM5 -50 -55 -60 8 10 12 14 16 18 20 22 24 26 8 2-tone Total Output Power (dBm) 200m A 225m A 250m A 10 12 14 16 18 20 22 24 26 2-tone Total Output Power (dBm) 275m A 200m A 6 225m A 250m A 275m A ES/FMM5804YD K-Band Power Amplifier MMIC IMD Performance vs. Total Output Power by Drain Voltage @ freq.=22GHz, IDD(DC)=250mA f=+10MHz, 2-tone test IMD Performance vs. Total Output Power by Drain Voltage @ freq.=17.5GHz, IDD(DC)=250mA f=+10MHz, 2-tone test -10 Intermodulation Distortion (dBc) Intermodulation Distortion (dBc) -10 -15 -20 IM3 -25 -30 -35 -40 -45 -50 IM5 -55 -60 -15 -20 -25 IM3 -30 -35 -40 -45 -50 IM5 -55 -60 8 10 12 14 16 18 20 22 24 26 8 2-tone Total Output Power (dBm) 3V 4V 5V 2-tone Total Output Power (dBm) 6V 3V IMD Performance vs. Total Output Power by Drain Voltage @ freq.=26GHz, IDD(DC)=250mA f=+10MHz, 2-tone test Intermodulation Distortion (dBc) Intermodulation Distortion (dBc) IM3 -30 -35 -40 -45 IM5 -50 5V 6V -10 -15 -25 4V IMD Performance vs. Total Output Power by Drain Voltage @ freq.=30GHz, IDD(DC)=250mA f=+10MHz, 2-tone test -10 -20 10 12 14 16 18 20 22 24 26 -55 -15 -20 IM3 -25 -30 -35 -40 -45 IM5 -50 -55 -60 -60 8 10 12 14 16 18 20 22 24 26 4V 5V 10 12 14 16 18 20 22 24 26 2-tone Total Output Power (dBm) 2-tone Total Output Power (dBm) 3V 8 3V 6V 7 4V 5V 6V ES/FMM5804YD K-Band Power Amplifier MMIC Return Loss vs. Frequency @ VDD=6V, IDD(DC)=250mA 30 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 10 5 0 Return Loss (dB) Small Signal Gain (dB) Small Signal Gain vs. Frequency @ VDD=6V, IDD(DC)=250mA -5 -10 -15 -20 -25 -30 -35 -40 0 5 10 15 20 25 30 35 40 Frequency (GHz) 0 5 10 15 20 25 30 Frequency (GHz) Sm all Signal Gain Input 8 Output 35 40 ES/FMM5804YD K-Band Power Amplifier MMIC S-Parameters FREQ. [MHz] 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 21000 22000 23000 24000 25000 26000 27000 28000 29000 30000 31000 32000 33000 34000 35000 36000 37000 38000 39000 40000 S11 mag. 0.607 0.583 0.591 0.577 0.574 0.582 0.590 0.575 0.552 0.506 0.460 0.374 0.274 0.172 0.129 0.290 0.390 0.449 0.496 0.503 0.483 0.462 0.464 0.378 0.253 0.057 0.212 0.209 0.174 0.287 0.307 0.532 0.630 0.739 0.732 0.700 0.657 0.581 0.545 0.464 ang. 141.1 100.0 54.5 10.3 -30.7 -70.4 -105.6 -138.3 -169.3 164.9 137.2 109.7 85.5 73.4 137.6 98.6 68.6 39.5 8.2 -24.1 -54.8 -85.4 -113.8 -145.3 176.0 138.3 -137.3 142.8 62.2 -24.6 -65.9 -91.7 -115.8 -147.1 -171.0 170.6 148.5 132.1 118.6 97.9 @ VDD=6V, I DD(DC) =250mA S21 S12 mag. ang. mag. ang. 0.258 5.5 0.001 -120.2 0.070 -4.1 0.000 129.0 0.028 -62.0 0.001 -24.5 0.022 -72.4 0.004 -23.9 0.016 -78.4 0.004 -51.4 0.154 -94.9 0.005 -72.3 0.347 170.6 0.005 -87.7 0.554 84.9 0.006 -94.3 0.820 -2.6 0.005 -107.6 0.761 -87.0 0.005 -65.6 0.601 -137.9 0.007 -88.3 0.771 -169.9 0.007 -103.3 1.366 142.2 0.009 -95.3 3.505 73.6 0.007 -99.8 6.838 -16.2 0.010 -113.4 9.513 -125.7 0.006 -67.6 8.599 143.0 0.009 -118.1 8.189 63.0 0.006 -102.4 8.098 -14.0 0.006 -100.4 8.316 -93.7 0.007 -99.9 8.051 -172.5 0.008 -100.8 7.427 108.2 0.008 -113.5 6.774 32.2 0.009 -149.0 7.104 -36.3 0.006 153.5 8.354 -118.1 0.010 46.2 9.016 153.5 0.016 7.6 8.667 65.2 0.023 -30.1 9.179 -29.5 0.024 -62.7 7.605 -126.1 0.018 -65.0 7.114 125.1 0.026 -86.9 6.564 9.4 0.021 -130.5 4.711 -141.2 0.003 -117.6 0.696 59.2 0.018 -50.9 0.085 -59.4 0.021 -103.4 0.015 -153.7 0.018 -158.0 0.019 100.1 0.014 90.6 0.030 0.6 0.015 -1.4 0.022 -53.3 0.016 -38.7 0.005 -38.3 0.013 -56.7 0.013 -64.6 0.010 -63.0 9 S22 mag. 0.835 0.994 0.999 0.974 0.959 0.947 0.944 0.947 0.938 0.917 0.879 0.809 0.790 0.681 0.587 0.340 0.105 0.084 0.249 0.397 0.533 0.607 0.662 0.646 0.506 0.345 0.156 0.241 0.393 0.564 0.673 0.792 0.712 0.402 0.424 0.694 0.764 0.858 0.909 0.887 ang. -87.5 -130.4 172.2 121.5 71.8 23.2 -24.5 -68.5 -109.2 -145.6 -179.5 148.8 119.8 82.7 46.5 0.8 -42.2 103.9 66.2 29.7 -9.8 -50.5 -89.5 -128.7 -179.5 127.0 82.8 19.3 -42.8 -80.9 -121.1 -148.9 163.0 91.2 -85.2 -149.9 -177.9 158.4 135.9 114.4 ES/FMM5804YD K-Band Power Amplifier MMIC Tch vs. Drain Voltage (Reference) IDD=250mA 50 45 40 Tch [] 35 30 25 20 15 10 5 0 2 3 4 5 6 7 VDD [V] Note : Tch :Temperature Rise from Backside of the Package to Channel. MTTF vs. Tch 1.E+12 1.E+11 1.E+10 MTTF (Hrs) 1.E+09 1.E+08 1.E+07 1.E+06 1.E+05 1.E+04 1.E+03 1.E+02 1.E+01 60 80 100 120 140 160 180 200 220 240 260 Channel Temperature (deg-C) 10 ES/FMM5804YD K-Band Power Amplifier MMIC Package Outline Unit : mm Pin Assignment 1 : RF-in 2 : VDD1 3 : VDD2 4 : RF-out 5 : VGG 6 : N.C. 11 ES/FMM5804YD K-Band Power Amplifier MMIC Block Diagram and External Component VGG Input 1 F 1000pF 100pF 6 5 RF Input 4 1 2 RF Output 3 100pF 100pF 1000pF 1000pF 1 F 1 F VDD Input Note) : The capacitors are recommended on the bias supply line, close to the package, in order to prevent video oscillations which could damage the module. 12 ES/FMM5804YD K-Band Power Amplifier MMIC Recommended Foot Pattern Layout Unit : mm Notes : 1.LAMINATE : Rogers Corporation RO4003, Thickness t=0.2mm, Cu Foil 18m 2. : Finish to copper foil ; Ni 0.1m min./Au 0.10.08m (Both side) 3. : Resist 13 ES/FMM5804YD K-Band Power Amplifier MMIC Mounting Method of SMD(Surface Mount Devices) for Lead-free Solder Mounting Condition (1)For soldering, Lead-free solder (Sn-3.0Ag-0.5Cu)*1 or equivalent shall be used. (*1: The figure displays with weight %. A predominantly tin-rich alloy with 3.0% silver and 0.5% copper.) (2) A rosin type flux with a chlorine content of 0.2% or less shall be used. The rosin flux with low halogen content is recommended. (3) When soldering, use one of the following time / temperature methods for acceptable solder joints. Make sure the devices have been properly prepared with flux prior soldering. * Reflow soldering method (Infrared reflow / Heat circulation reflow / Hot plate reflow): Limit solder to 3 reflow cycles because resin is used in the modules manufacturing process. Excessive reflow cycles will effect the resin resulting in a potential failure or latent defect. The recommended reflow temperature profile is shown below. The temperature of the reflow profile must be measured at the device lead. Temperature (deg-C) Reflow temperature profile and condition: 260 250 220 200 150 (2) RT (1) (4) (3) Time (1) Temperature rise: 3deg-C /seconds. (2) Preheating: 150 - 200deg-C, 60 - 180 seconds. (3) Main heating: 220deg-C, 60 seconds max... (4) Main heating: 260deg-C max. more than 250deg-C,10 seconds max.. * Measurement point: Device lead. (4)The above-recommended conditions were confirmed using the manufacture's equipment and materials. However, when soldering these products, the soldering condition should be verified by customer using their equipment and materials. 14 ES/FMM5804YD K-Band Power Amplifier MMIC Moisture Sensitivity levels(MSL) * Floor life Table 1. Moisture classification level and floor life Level 1 2 2a 3 4 5 5a 6 Floor life(*1) Time Unlimited 1year 4weeks 168hours 72hours 48hours 24hours <24hours (*2) Condition =<30 degC / 85%RH =<30 degC / 60%RH =<30 degC / 60%RH =<30 degC / 60%RH =<30 degC / 60%RH =<30 degC / 60%RH =<30 degC / 60%RH =<30 degC / 60%RH *1 Floor life means the maximum time allowed between open the bag and mounting reflow at the customer's factory. *2 Device classified as level 6 must be dried by baking, then reflowed within the time limit specified each device. Table 1 is an extract from IPC/JEDEC J-STD-020B. * MSL of device Package Type YC, YD,YE,YF MSL 3 If storage time, temperature or humidity condition is exceeded for floor life, please bake the device. Baking condition : 125degC, 24hours 15 ES/FMM5804YD K-Band Power Amplifier MMIC Humidity Lifetime for ES/FMM5804YD The following graph shows the lifetime of moisture resistance for the ES/FMM5804YD. Each line in the graph indicates the lifetime that is the estimated failure rate of 0.1% at 10 years (Confidence Level = 90 %) and calculated from the results of pressure cooker (autoclave) bias test. The horizontal-axis shows typical ambient temperature. The verticalaxis shows relative humidity. The left side of the area delimited in each line indicates more than 10 years of lifetime. Field environmental conditions for operation In the case that ES/FMM5804YD is mounted in a non-hermetic package, please refer to the following recommendations. Note 1. The graph lines are drawn using the operating conditions as shown in the box below. EUD recommends our customers use ES/FMM5804YD within the left side area separated by each line in the graph below. Note 2. Please cut off the drain current by drain bias, not by gate bias. The humidity lifetime becomes shorter in case of gate cut off operation. Note 3. Please use ES/FMM5804YD under environmental conditions of no dew condensation. Field Environmental Conditions for a 10 years Lifetime 100% 90% [Gate cut off operating] Relative Humidity (%) 80% (Vdd=6V, Vgg=0V -1 V) 24 hours/day Cut off 12 hours/day Cut off 6 hours/day Cut off 3 hours/day Cut off 70% 60% 50% [Drain cut off operating] 40% (Vgg=-0V, Vdd=6V Field Environmental Conditions. 20% 10% 0% 0 10 20 0V) --- 0 hours/day Cut off --- 12 hours/day Cut off --- 18 hours/day Cut off 30% 30 40 50 60 70 Typical Ambient Temperature (deg-C) () 16 80 90 ES/FMM5804YD K-Band Power Amplifier MMIC For further information please contact : Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: +1 408 232-9500 FAX: +1 408 428-9111 CAUTION Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Eudyna Devices Europe Ltd. 150 Edinburgh Avenue Slough, Berkshire, SL1 4SS United Kingdom TEL: +44-(0)1753-849950 FAX: +44-(0)1753-577128 Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices International Srl Via Teglio 8/2 - 20158 Milano, Italy TEL: +39-02-3705 2921 FAX: +39-02-3705 2920 Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2009 Eudyna Devices Inc. Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Suite 1906B, Tower 6, China Hong Kong City 33 Canton Road, Tsimshatsui, Kowloon Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan TEL +81-45-853-8156 FAX +81-45-853-8170 17