BSP316PE6327 - Infineon Technologies

2002-07-24

Page 1

Preliminary data BSP 316 P

SIPMOS





Small-Signal-Transistor Product Summary

VDS -100 V

RDS(on) 1.8 Ω

ID-0.68 A

Feature

• P-Channel

• Enhancement mode

• Logic Level

• dv/dt rated P-SOT223-4-1

Gate

pin1

Drain

pin 2/ 4

Source

pin 3

Marking

BSP316P

Type Package Ordering Code Tape and Reel Information

BSP 316 P P-SOT223-4-1 Q67042-S4165 -

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

TA=70°C

-0.68

-0.54

Pulsed drain current

TA=25°C

ID puls -2.72

Reverse diode dv/dt

IS=-0.68A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C

dv/dt6 kV/µs

Gate source voltage VGS ±20 V

Power dissipation

TA=25°C

Ptot 1.8 W

Operating and storage temperature Tj , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

2002-07-24

Page 2

Preliminary data BSP 316 P

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

(Pin 4) RthJS - 15 25 K/W

SMD version, device on PCB:

@ min. footprint

@ 6 cm2 cooling area 1)

RthJA

115

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

V(BR)DSS -100 - - V

Gate threshold voltage, VGS = VDS

ID=-170µA

VGS(th) -1 -1.5 -2

Zero gate voltage drain current

VDS=-100V, VGS=0, Tj=25°C

VDS=-100V, VGS=0, Tj=150°C

IDSS

-0.1

-10

-0.2

-100

µA

Gate-source leakage current

VGS=-20V, VDS=0

IGSS - -10 -100 nA

Drain-source on-state resistance

VGS=-4.5V, ID=-0.61A

RDS(on) - 1.5 2.3 Ω

Drain-source on-state resistance

VGS=-10V, ID=-0.68A

RDS(on) - 1.4 1.8

1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

2002-07-24

Page 3

Preliminary data BSP 316 P

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs |VDS|≥2*|ID|*RDS(on)max ,

ID=-0.54A

0.5 1 - S

Input capacitance Ciss VGS=0, VDS=-25V,

f=1MHz

- 117 146 pF

Output capacitance Coss - 27.7 34.5

Reverse transfer capacitance Crss - 12 15

Turn-on delay time td(on) VDD=-50V, VGS=-10V,

ID=-0.68A, RG=6Ω

- 4.7 7 ns

Rise time tr- 7.5 11.2

Turn-off delay time td(off) - 67.4 101

Fall time tf- 25.9 38.9

Gate Charge Characteristics

Gate to source charge Qgs VDD=-80V, ID=-0.68A - -0.2 -0.3 nC

Gate to drain charge Qgd - -1.87 -2.8

Gate charge total QgVDD=-80V, ID=-0.68A,

VGS=0 to -10V

- -5.1 -6.4

Gate plateau voltage V(plateau) VDD=-80V, ID=-0.68A - -2.7 - V

Reverse Diode

Inverse diode continuous

forward current ISTA=25°C - - -0.68 A

Inv. diode direct current, pulsedISM - - -2.72

Inverse diode forward voltage VSD VGS=0, IF=-0.68A - -0.85 -1.2 V

Reverse recovery time trr VR=-50V, IF=lS,

diF/dt=100A/µs

- 44.2 55.3 ns

Reverse recovery charge Qrr - 56.3 70.4 nC

2002-07-24

Page 4

Preliminary data BSP 316 P

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.9 BSP 316 P

Ptot

2 Drain current

ID = f (TA)

parameter: |VGS| ≥ 10V

0 20 40 60 80 100 120 °C 160

-0.05

-0.1

-0.15

-0.2

-0.25

-0.3

-0.35

-0.4

-0.45

-0.5

-0.55

-0.6

-0.75 BSP 316 P

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , T

= 25°C

-10 -1 -10 0 -10 1 -10 2 -10 3

VDS

-2

-10

-1

-10

BSP 316 P

DS(on)

= V

/ I

10 ms

1 ms

tp = 250.0µs

4 Transient thermal impedance

ZthJA = f (tp)

parameter : D = tp/T

10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 4

-2

-1

K/W

BSP 316 P

ZthJA

single pulse

0.01

0.02

0.05

0.10

0.20

D = 0.50

2002-07-24

Page 5

Preliminary data BSP 316 P

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj =25°C, -VGS

0 0.5 1 1.5 2 2.5 3 3.5 4 V5

-VDS

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.4

-ID

10V

4.4V

3.6V

3.2V

2.8V

2.4V

2.2V

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: Tj =25°C, -VGS

0 0.4 0.8 1.2 1.6 A2.4

-ID

Ω

RDS(on)

2.2V

2.4V

2.8V

3.2V

3.6V

4.4V

10V

7 Typ. transfer characteristics

ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max

parameter: Tj = 25 °C

0 0.5 1 1.5 2 2.5 3 3.5 V4.5

-VGS

0.5

1.5

2.5

3.5

-ID

8 Typ. forward transconductance

gfs = f(ID)

parameter: T

=25°C

0 0.4 0.8 1.2 1.6 2 2.4 A3.2

-ID

0.3

0.6

0.9

1.2

1.8

gfs

2002-07-24

Page 6

Preliminary data BSP 316 P

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = -0.68 A, VGS = -10 V

-60 -20 20 60 100 °C 180

0.5

1.5

2.5

3.5

Ω

5 BSP 316 P

RDS(on)

typ

98%

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS

-60 -20 20 60 100 °C 160

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.4

VGS(th)

typ.

98%

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz, T

= 25 °C

0 4 8 12 16 20 24 28 V36

-VDS

Ciss

Coss

Crss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: T

0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V-3

VSD

-2

-10

-1

-10

BSP 316 P

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

2002-07-24

Page 7

Preliminary data BSP 316 P

13 Typ. gate charge

VGS = f (QGate)

parameter: ID = -0.68 A pulsed, Tj = 25 °C

0 1 2 3 4 5 6 7 nC 8.5

|QG|

-2

-4

-6

-8

-10

-12

-16 BSP 316 P

VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-60 -20 20 60 100 °C 180

-90

-92

-94

-96

-98

-100

-102

-104

-106

-108

-110

-112

-114

-120 BSP 316 P

V(BR)DSS

2002-07-24

Page 8

Preliminary data BSP 316 P

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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