Silicon Power Transistors
The MJ15023 and MJ15025 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.
•High Safe Operating Area (100% Tested) —
2 A @ 80 V
•High DC Current Gain —
hFE = 15 (Min) @ IC = 8 Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Rating
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
MJ15023
ÎÎÎÎ
ÎÎÎÎ
MJ15025
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEO
ÎÎÎÎ
ÎÎÎÎ
200
ÎÎÎÎ
ÎÎÎÎ
250
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VCBO
ÎÎÎÎ
ÎÎÎÎ
350
ÎÎÎÎ
ÎÎÎÎ
400
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter–Base Voltage
ÎÎÎÎ
ÎÎÎÎ
VEBO
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Voltage
ÎÎÎÎ
ÎÎÎÎ
VCEX
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
400
ÎÎÎ
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Current — Continuous
Peak (1)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
IC
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
16
30
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Base Current — Continuous
ÎÎÎÎ
ÎÎÎÎ
IB
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
5
ÎÎÎ
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Total Power Dissipation @ TC = 25C
Derate above 25C
ÎÎÎÎ
ÎÎÎÎ
PD
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
250
1.43
ÎÎÎ
ÎÎÎ
Watts
W/C
ÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎ
Operating and Storage Junction
Temperature Range
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
TJ, Tstg
ÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎ
–65 to +200
ÎÎÎ
Î
Î
Î
ÎÎÎ
C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
THERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎ
ÎÎÎÎ
Symbol
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎ
Thermal Resistance, Junction to Case
ÎÎÎÎ
ÎÎÎÎ
RθJC
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
0.70
ÎÎÎ
ÎÎÎ
C/W
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9 1Publication Order Number:
MJ15023/D
MJ15023
MJ15025
16 AMPERE
SILICON
POWER TRANSISTORS
200 AND 250 VOLTS
250 WATTS
*ON Semiconductor Preferred Device
*
PNP
CASE 1–07
TO–204AA
(TO–3)
MJ15023 MJ15025
http://onsemi.com
2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
Min
Max
ÎÎÎ
ÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Sustaining Voltage (1)
(IC = 100 mAdc, IB = 0) MJ15023
MJ15025
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
Î
200
250
ÎÎ
—
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ15023
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15025
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
Î
Î
—
—
ÎÎ
ÎÎ
250
250
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0) MJ15023
(VCE = 200 Vdc, IB = 0) MJ15025
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
Î
—
—
ÎÎ
500
500
ÎÎÎ
Î
Î
Î
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VCE = 5 Vdc, IB = 0) Both
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
Î
—
ÎÎ
500
ÎÎÎ
Î
Î
Î
ÎÎÎ
µAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Second Breakdown Collector Current with Base Forward Biased
(VCE = 50 Vdc, t = 0.5 s (non–repetitive))
(VCE = 80 Vdc, t = 0.5 s (non–repetitive))
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IS/b
Î
5
2
ÎÎ
—
—
ÎÎÎ
Î
Î
Î
ÎÎÎ
Adc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
(IC = 16 Adc, VCE = 4 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
Î
Î
15
5
ÎÎ
ÎÎ
60
—
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
—
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector–Emitter Saturation Voltage
(IC = 8 Adc, IB = 0.8 Adc)
(IC = 16 Adc, IB = 3.2 Adc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCE(sat)
Î
—
ÎÎ
1.4
4.0
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base–Emitter On Voltage
(IC = 8 Adc, VCE = 4 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
Î
—
ÎÎ
2.2
ÎÎÎ
Î
Î
Î
ÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current–Gain — Bandwidth Product
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
ÎÎÎÎÎ
ÎÎÎÎÎ
fT
4
—
ÎÎÎ
ÎÎÎ
MHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
Cob
Î
—
ÎÎ
600
ÎÎÎ
Î
Î
Î
ÎÎÎ
pF
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle 2%.
100
Figure 1. Active–Region Safe Operating Area
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
0.1 0.2 0.5 10 1 k
20
TC = 25°C
50 250
0.1
IC, COLLECTOR CURRENT (AMPS)
0.2
1.0
5.0
50
500100
10
20
BONDING WIRE LIMITED
THERMAL LIMITATION
(SINGLE PULSE)
SECOND BREAKDOWN LIMITED
There are two limitations on the powerhandling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 1 is based on TJ(pk) = 200C; TC is
variable depending on conditions. At high case
temperatures, thermal limitations will reduce the power that
can be handled to values less than the limitations imposed by
second breakdown.
MJ15023 MJ15025
http://onsemi.com
3
fT, CURRENT-GAIN  BANDWIDTH PRODUCT (MHz)
Figure 2. Capacitances Figure 3. Current–Gain — Bandwidth Product
Figure 4. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.1 0.3 0.5
9
5
VCE = 4.0 V
8
2
1.0 5.0
0
1
3
4
7
6
2.0 10
4000
0.3
VR, REVERSE VOLTAGE (VOLTS)
50
C, CAPACITANCE (pF)
TJ = 25°C
10010
500
100
1000
300301.00.5
Figure 5. “On” Voltages
5.0
1.8
0.1
IC, COLLECTOR CURRENT (AMPS)
10
V, VOLTAGE (VOLTS)
TJ = 25°C
5.0
1.0
0.8
0.2
0
1.4
2.01.0
VCE(sat) @ IC/IB = 10
0.5
VBE(on) @ VCE = 4.0 V
IC, COLLECTOR CURRENT (AMPS)
200
hFE, DC CURRENT GAIN
100
2.0
5.0
10
20
50
Cob
TJ = 25°C
TJ = 100°C
TJ = 25°C
VCE = 10 V
fTest = 1 MHz
25°C
100°C
3000
0.2 10 205.02.01.00.5
Cib
100°C
TYPICAL CHARACTERISTICS
MJ15023 MJ15025
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO-204AA OUTLINE SHALL APPLY.
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B--- 1.050 --- 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N--- 0.830 --- 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
–T– SEATING
PLANE
2 PL
D
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
–Q–
–Y–
2
1
UL
GB
V
H
CASE 1–07
TO–204AA (TO–3)
ISSUE Z
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