ABB Semiconductors AG reserves the right to change specifications without notice.
VRRM = 4500 V
IFAVM = 1650 A
IFSM =26kA
VF0 =1.9V
rF=0.79
m
VDClink = 2800 V
Doc. No. 5SYA1164-00 Sep. 01
Patented free-floating technology
Industry standard housing
Cosmic radiation withstand rating
Low on-state and switching losses
Optimized to use in snubberless operation
Blocking
VRRM Repetitive peak reverse voltage 4500 V Half sine wave, tP = 10 ms, f = 50 Hz
IRRM Repetitive peak reverse current 150 mA VR = VRRM, Tj = 125°C
VDClink Permanent DC voltage for 100 FIT
failure rate 2800 V 100% Duty
VDClink Permanent DC voltage for 100 FIT
failure rate 3200 V 5% Duty
Ambient cosmic radiation at
sea level in open air.
Mechanical data (see Fig. 6)
min. 36 kN
FmMounting force max. 70 kN
aAcceleration:
Device unclamped
Device clamped
50
200
m/s2
m/s2
m Weight 1.45 kg
DSSurface creepage distance 33 mm
DaAir strike distance 14 mm
Fast Recovery Diode
5SDF 16L4503
PRELIMINARY
5SDF 16L4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1164-00 Sep. 01 page 2 of 5
On-state (see Fig. 3)
IFAVM Max. average on-state current 1650 A
IFRMS Max. RMS on-state current 2590 A
Half sine wave, Tc = 70°C
IFSM Max. peak non-repetitive 26 kA tp = 10 ms Before surge:
surge current 47 kA tp = 1 ms Tc = Tj = 125°C
3.4106A2stp= 10ms
After surge:
òI2dt Max. surge current integral
1.1106A2stp= 1ms
VR 0 V
VFForward voltage drop 4.51 V IF= 3300 A
VF0 Threshold voltage 1.9 V Approximation for
rFSlope resistance 0.79 mIF= 500…4000 A
Tj = 125°C
Turn-on (see Fig. 2)
Vfr Peak forward recovery voltage 80 V di/dt = 600 A/µs, Tj = 125°C
Turn-off (see Fig. 5, 7)
di/dtcrit Max. decay rate of on-state current 600 A/µsIF = 4000 A, Tj = 125 °C
VDclink = 2800 V
Irr Reverse recovery current 1200 A
Qrr Reverse recovery charge 3900 µC
Err Turn-off energy 9.0 J
IF = 3300 A, VDC-Link = 2800 V
di/dt = 600 A/µs, LCL = 300 nH
CCL = 8 µF, RCL = 0.6 , Tj = 125°C
Thermal (see Fig. 1)
TjOperating junction temperature range 0...125°C
Tstg Storage temperature range -40...125°C
RthJC Thermal resistance junction to case 13 K/kW Anode side cooled
13 K/kW Cathode side cooled
6.5 K/kW Double side cooled
RthCH Thermal resistance case to heatsink 5 K/kW Single side cooled
Fm =
36… 70 kN
3 K/kW Double side cooled
Analytical function for transient thermal impedance.
i1234
R i(K/kW) 4.05 1.28 0.62 0.56
τi(s) 0.56685 0.10686 0.01239 0.00300
)e-(1R = (t)Z
n
1i
/t-
ithJC å
=
i
τ
Fm = 36… 70 kN Double side cooled
5SDF 16L4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1164-00 Sep. 01 page 3 of 5
10-3 10-2 10-1 100101102
t [ms]
0
1
2
3
4
5
6
7
8
ZthIC [K/kW]
Fm = 36..70 kN
Double Side Cooling
Fig. 1 Transient thermal impedance (junction to case) vs. time in analytical and graphical form (max.
values).
0246
VF [V]
0
2000
4000
6000
8000
IF [A]
Tj = 125 °C
typical
Tj = 125 °C
Fig. 2 Typical forward voltage waveform when
the diode is turned on with high di/dt.
Fig. 3 Forward current vs. forward voltage.
5SDF 16L4503
ABB Semiconductors AG reserves the right to change specifications without notice.
Doc. No. 5SYA1164-00 Sep. 01 page 4 of 5
0 1000 2000 3000 4000 5000
IFQ [A]
0
1
2
3
4
5
6
7
8
9
10
Err [J]
Tj = 125°C
diF/dt = 600 A/µs
VDC-link = 2800 V
Voltage Clamp
0
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0 1000 2000 3000 4000
VD [V]
IF[A]
Tj = 0..125 °C
diF/dt = 600 A/µs
VRM
VRRM
Voltage Clamp
Fig. 4 Diode turn-off energy per pulse vs. turn-
off current.
Fig. 5 Max. repetitive turn off current.
5SDF 16L4503
ABB Semiconductors AG reserves the right to change specifications without notice.
ABB Semiconductors AG Doc. No. 5SYA1164-00 Sep. 01
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)62 888 6419
Fax +41 (0)62 888 6306
Email abbsem@ch.abb.com
Internet www.abbsem.com
Fig. 6 Outline drawing. All dimensions are in millimeters and represent nominal values unless stated
otherwise.
L
CL
Fig. 7 Typical current and voltage waveforms at turn-off in a circuit with voltage clamp.