2013-0510Rev. 2.6 Page 1
SPU07N60S5
SPD07N60S5
Cool MOS™ Power Transistor VDS 600 V
RDS(on) 0.6 Ω
ID7.3 A
Feature
• New revolutionary high voltage technology
• Worldwide best RDS(on) in TO-251 and TO-252
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dtrated
• Ultra low effective capacitances
• Improved transconductance
PG-TO251PG-TO252
1
3
2
1
3
2
Type Package Ordering Code
SPU07N60S5 PG-TO251 Q67040-S4196
SPD07N60S5 PG-TO252 Q67040-S4186
Marking
07N60S5
07N60S5
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
C
= 25 °C
T
C
= 100 °C
I
D
7.3
4.6
A
Pulsed drain current, t
p
limited by T
j
ma
x
I
D
p
uls
14.6
Avalanche energy, single pulse
I
D
= - A, V
DD
= 50 V
E
AS
230 mJ
Avalanche energy, repetitive t
AR
limited by T
jmax1
)
I
D
= 7.3 A, V
DD
= 50 V
E
AR
0.5
Avalanche current, repetitive t
AR
limited by T
j
ma
x
I
AR
7.3 A
Gate source voltage V
GS
±20 V
Gate source voltage AC (f >1Hz) V
GS
±30
Power dissipation,
TC = 25°C
P
tot
83 W
Operating and storage temperature T
j
,
T
st
g
-55... +150 °C
2013-05-10Rev. 2.6 Page 2
SPU07N60S5
SPD07N60S5
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 480 V, ID = 7.3 A, Tj = 125 °C
dv/dt20 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 1.5 K/W
Thermal resistance, junction - ambient, leaded RthJA --75
SMD version, device on PCB:
@ min. footprint
@ 6 cm2 cooling area 2)
RthJA
-
-
-
-
75
50
Soldering temperature, *)
1.6 mm (0.063 in.) from case for 10s
Tsold - - 260 °C
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 600 - - V
Drain-Source avalanche
breakdown voltage
V(BR)DS VGS=0V, ID=7.3A - 700 -
Gate threshold voltage VGS
(
th
)
ID=350µΑ,VGS=VDS 3.5 4.5 5.5
Zero gate voltage drain current IDSS VDS=600V, VGS=0V,
Tj=25°C,
Tj=150°C
-
-
0.5
-
1
100
µA
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=4.6A,
Tj=25°C
Tj=150°C
-
-
0.54
1.46
0.6
-
Ω
Gate input resistance RGf=1MHz, open Drain - 19 -
*) TO252: reflow soldering, MSL1; TO251: wavesoldering
2013-05-10Rev. 2.6 Page 3
SPU07N60S5
SPD07N60S5
Electrical Characteristics , at T
j
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance gfs VDS≥2*ID*RDS(on)max,
ID=4.6A
- 4 - S
Input capacitance Ciss VGS=0V, VDS=25V,
f=1MHz
- 970 - pF
Output capacitance Coss - 370 -
Reverse transfer capacitance Crss - 10 -
Effective output capacitance,3)
energy related
Co(er) VGS=0V,
VDS=0V to 480V
- 30 - pF
Effective output capacitance,4)
time related
Co(tr) - 55 -
Turn-on delay time td(on) VDD=350V, VGS=0/10V,
ID=7.3A, RG=12Ω
- 120 - ns
Rise time tr- 40 -
Turn-off delay time td(off) - 170 255
Fall time tf- 20 30
Gate Charge Characteristics
Gate to source charge Qgs VDD=350V, ID=7.3A - 7.5 - nC
Gate to drain charge Qgd - 16.5 -
Gate charge total QgVDD=350V, ID=7.3A,
VGS=0 to 10V
- 27 35
Gate plateau voltage V(plateau) VDD=350V, ID=7.3A - 8 - V
1Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
3Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
4Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
2013-05-10Rev. 2.6 Page 4
SPU07N60S5
SPD07N60S5
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous
forward current
ISTC=25°C - - 7.3 A
Inverse diode direct current,
pulsed
ISM - - 14.6
Inverse diode forward voltage VSD VGS=0V, IF=IS- 1 1.2 V
Reverse recovery time trr VR=350V, IF=IS ,
diF/dt=100A/µs
- 750 1275 ns
Reverse recovery charge Qrr - 4.9 - µC
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
Rth1 0.024 K/W
Rth2 0.046
Rth3 0.085
Rth4 0.308
Rth5 0.317
Rth6 0.112
Thermal capacitance
Cth1 0.00012 Ws/K
Cth2 0.0004578
Cth3 0.000645
Cth4 0.001867
Cth5 0.004795
Cth6 0.045
External Heatsink
TjTcase
Tamb
Cth1 Cth2
Rth1 Rth,n
Cth,n
Ptot (t)
2013-05-10Rev. 2.6 Page 5
SPU07N60S5
SPD07N60S5
1 Power dissipation
Ptot = f(TC)
0 20 40 60 80 100 120 °C 160
TC
0
10
20
30
40
50
60
70
80
W
100 SPU07N60S5
Ptot
2 Safe operating area
ID= f ( VDS )
parameter : D = 0 , TC=25°C
10 010 110 210 3
V
VDS
-2
10
-1
10
0
10
1
10
2
10
A
ID
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC
3 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp= 10 µs, VGS
0 5 10 15 V 25
VDS
0
5
10
15
A
25
ID
7V
8V
9V
10V
12V
20V
4 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp= 10 µs, VGS
0 5 10 15 V 25
VDS
0
2
4
6
8
A
12
ID
6V
6.5V
7V
7.5V
8V
8.5V
9V
20V
12V
10V
2013-05-10Rev. 2.6 Page 6
SPU07N60S5
SPD07N60S5
5 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
0 2 4 6 8 10 A14
ID
1
1.5
2
mΩ
3
RDS(on)
20V
12V
10V
9V
8.5V
8V
7.5V
7V
6.5V
6V
6 Drain-source on-state resistance
RDS(on) = f(Tj)
parameter : ID = 4.6 A, VGS = 10 V
-60 -20 20 60 100 °C 180
Tj
0
0.4
0.8
1.2
1.6
2
2.4
2.8
Ω
3.4 SPU07N60S5
RDS(on)
typ
98%
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
0 4 8 12 V 20
VGS
0
2
4
6
8
10
12
14
16
18
20
A
24
ID
25 °C
150 °C
8 Typ. gate charge
VGS =f (QGate)
parameter: ID = 7.3 A pulsed
0 4 8 12 16 20 24 28 32 nC 38
QGate
0
2
4
6
8
10
12
V
16 SPU07N60S5
VGS
0.2 VDS max
0.8 VDS max
2013-05-10Rev. 2.6 Page 7
SPU07N60S5
SPD07N60S5
9 Forward characteristics of body diode
IF = f (VSD)
parameter: T
, tp= 10 µs
0 0.4 0.8 1.2 1.6 2 2.4 V3
VSD
-1
10
0
10
1
10
2
10
A
SPU07N60S5
IF
Tj = 25 °C typ
Tj = 25 °C (98%)
Tj = 150 °C typ
Tj = 150 °C (98%)
10 Avalanche SOA
IAR = f (tAR)
par.: Tj≤ 150 °C
10 -3 10 -2 10 -1 10 010 110 210 4
µs
tAR
0
1
2
3
4
5
6
A
8
IAR
Tj(START)=125°C
Tj(START)=25°C
11 Avalanche energy
EAS = f(Tj)
par.: ID = - A, VDD = 50 V
20 40 60 80 100 120 °C 160
Tj
0
20
40
60
80
100
120
140
160
180
200
220
mJ
260
EAS
12 Drain-source breakdown voltage
V(BR)DSS = f(Tj)
-60 -20 20 60 100 °C 180
Tj
540
560
580
600
620
640
660
680
V
720
SPU07N60S5
V(BR)DSS
2013-0510Rev. 2.6 Page 8
SPU07N60S5
SPD07N60S5
13 Avalanche power losses
PAR = f (f )
parameter: EAR=0.5mJ
10 410 510 6
MHz
f
0
50
100
150
200
W
300
PAR
14 Typ. capacitances
C = f(VDS)
parameter: VGS=0V, f=1 MHz
0 100 200 300 400 V 600
VDS
0
10
1
10
2
10
3
10
4
10
pF
C
Ciss
Coss
Crss
15 Typ. Coss stored energy
Eoss=f(VDS)
0 100 200 300 400 V 600
VDS
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
µJ
5.5
Eoss
2013-05-10Rev. 2.6 Page 9
SPU07N60S5
SPD07N60S5
Definition of diodes switching characteristics
20130510
Rev. 2.6 Page 10
SPU07N60S5
SPD07N60S5
PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK)
20130510
Rev. 2.6 Page 11
SPU07N60S5
SPD07N60S5
PG-TO251-3-1, PG-TO251-3-21 (I-PAK)
20130510Rev. 2.6 Page 12
SPU07N60S5
SPD07N60S5