SOT89 NPN SILIC ON PLANAR
DARLINGTON TRANSISTOR
ISSUE 3 – SEPTEMBER 1995
COMPLEMENTA RY TYPE – BCV48
PARTMARKIN G DETAILS – EG
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector -Base Volta ge VCBO 80 V
Collector-Emitte r Voltage VCEO 60 V
Emitter-Base Voltage VEBO 10 V
Peak Pulse Curr ent ICM 800 mA
Continuo us Collector Current IC500 mA
Power Dissipation at Tamb
=25°C Ptot 1W
Operating and Storage Temperatu re
Range Tj:Tstg -65 to +150 °C
ELECTRICA L CH ARA CTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage V(BR)CBO 80 V IC=100µA
Collector-Emitter
Breakdown Voltage V(BR)CEO 60 V IC=10mA*
Emitter-Base
Breakdown Voltage V(BR)EBO 10 V IE=10µA
Collector Cut-Off
Current ICBO 100
10 nA
µAVCB=60V
VCB=60V, Tamb=150°C
Emitter Cut-Off Current IEBO 100 nA VEB=4V
Collector-Emitter
Saturation Voltage VCE(sat) 1VI
C=100mA, IB=0.1mA*
Base-Emitter
Saturation Voltage VBE(sat) 1.5 V IC=100mA, IB=0.1mA*
Static Forward Current
Transfer Ratio hFE 2000
4000
10000
2000
IC=100µA, VCE=1V†
IC=10mA, VCE=5V*
IC=100mA, VCE=5V*
IC=500mA, VCE=5V*
Transition Fre quency fT170 MHz IC=50mA, VCE=5V
f = 20MH z
Output Capacita nce Cobo 3.5 pF VCB=1 0V, f=1MH z
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
For typical graphs see FMMT38A datasheet † Periodic Sample Test Only.
Spice parameter data is available upon request for this device
BCV49
C
C
B
E
SOT89
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