MAIN MosFET / DIMMING MosFET
The LM3421/23 requires an external NFET (Q1) as the main
power MosFET for the switching regulator. Q1 is recommend-
ed to have a voltage rating at least 15% higher than the
maximum transistor voltage to ensure safe operation during
the ringing of the switch node. In practice, all switching regu-
lators have some ringing at the switch node due to the diode
parasitic capacitance and the lead inductance. The current
rating is recommended to be at least 10% higher than the
average transistor current. The power rating is then verified
by calculating the power loss given the RMS transistor current
and the NFET on-resistance (RDS-ON).
When PWM dimming, the LM3421/23 requires another Mos-
FET (Q2) placed in series (or parallel for a buck regulator)
with the LED load. This MosFET should have a voltage rating
equal to the output voltage (VO) and a current rating at least
10% higher than the nominal LED current (ILED) . The power
rating is simply VO multiplied by ILED, assuming 100% dim-
ming duty cycle (continuous operation) will occur.
In general, the NFETs should be chosen to minimize total gate
charge (Qg) when fSW is high and minimize RDS-ON otherwise.
This will minimize the dominant power losses in the system.
Frequently, higher current NFETs in larger packages are cho-
sen for better thermal performance.
RE-CIRCULATING DIODE
A re-circulating diode (D1) is required to carry the inductor
current during tOFF. The most efficient choice for D1 is a
Schottky diode due to low forward voltage drop and near-zero
reverse recovery time. Similar to Q1, D1 is recommended to
have a voltage rating at least 15% higher than the maximum
transistor voltage to ensure safe operation during the ringing
of the switch node and a current rating at least 10% higher
than the average diode current. The power rating is verified
by calculating the power loss through the diode. This is ac-
complished by checking the typical diode forward voltage
from the I-V curve on the product datasheet and multiplying
by the average diode current. In general, higher current
diodes have a lower forward voltage and come in better per-
forming packages minimizing both power losses and temper-
ature rise.
BOOST INRUSH CURRENT
When configured as a boost converter, there is a “phantom”
power path comprised of the inductor, the output diode, and
the output capacitor. This path will cause two things to happen
when power is applied. First, there will be a very large inrush
of current to charge the output capacitor. Second, the energy
stored in the inductor during this inrush will end up in the out-
put capacitor, charging it to a higher potential than the input
voltage.
Depending on the state of the EN pin, the output capacitor
would be discharged by:
1. EN < 1.3V: no discharge path (leakage only).
2. EN > 1.3V, the OVP divider resistor path, if present, and
10µA into each of the HSP & HSN pins.
In applications using the OVP divider and with EN > 1.3V, the
output capacitor voltage can charge higher than VTURN-OFF. In
this situation, the FLT pin (LM3423 only) is open and the PWM
dimming MosFET is turned off. This condition (the system
appearing disabled) can persist for an undesirably long time.
Possible solutions to this condition are:
•Add an inrush diode from VIN to the output as shown in
Figure 21.
•Add an NTC thermistor in series with the input to prevent
the inrush from overcharging the output capacitor too high.
•Use a current limited source supply.
•Raise the OVP threshold.
300673i9
FIGURE 21. Boost Topology with Inrush Diode
CIRCUIT LAYOUT
The performance of any switching regulator depends as much
upon the layout of the PCB as the component selection. Fol-
lowing a few simple guidelines will maximimize noise rejection
and minimize the generation of EMI within the circuit.
Discontinuous currents are the most likely to generate EMI,
therefore care should be taken when routing these paths. The
main path for discontinuous current in the LM3421/23 buck
regulator contains the input capacitor (CIN), the recirculating
diode (D1), the N-channel MosFET (Q1), and the sense re-
sistor (RLIM). In the LM3421/23 boost regulator, the discon-
tinuous current flows through the output capacitor (CO), D1,
Q1, and RLIM. In the buck-boost regulator both loops are dis-
continuous and should be carefully layed out. These loops
should be kept as small as possible and the connections be-
tween all the components should be short and thick to mini-
mize parasitic inductance. In particular, the switch node
(where L1, D1 and Q1 connect) should be just large enough
to connect the components. To minimize excessive heating,
large copper pours can be placed adjacent to the short current
path of the switch node.
The RT, COMP, CSH, IS, HSP and HSN pins are all high-
impedance inputs which couple external noise easily, there-
fore the loops containing these nodes should be minimized
whenever possible.
In some applications the LED or LED array can be far away
(several inches or more) from the LM3421/23, or on a sepa-
rate PCB connected by a wiring harness. When an output
capacitor is used and the LED array is large or separated from
the rest of the regulator, the output capacitor should be placed
close to the LEDs to reduce the effects of parasitic inductance
on the AC impedance of the capacitor.
www.national.com 20
LM3421 LM3421Q1 LM3421Q0 LM3423 LM3423Q1 LM3423Q0