TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DEVICES LEVELS 2N7268 2N7268U JANSR (100K RAD(Si)) JANSF (300K RAD(Si)) ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Drain - Source Voltage VDS 100 Vdc Gate - Source Voltage VGS 20 Vdc ID1 34.0 Adc ID2 21.0 Adc Ptl 150 (1) W Continuous Drain Current TC = +25C Continuous Drain Current TC = +100C Max. Power Dissipation Drain to Source On State Resistance Rds(on) Operating & Storage Temperature Top, Tstg 0.065 (2) -55 to +150 C TO-254AA JANSR2N7268, JANSF2N7268 See Figure 1 Note: (1) Derated Linearly by 1.2 W/C for TC > +25C (2) VGS = 12Vdc, ID = 21.0A PRE-IRRADIATION ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 100 Gate-Source Voltage (Threshold) VDS VGS, ID = 1.0mA VDS VGS, ID = 1.0mA, Tj = +125C VDS VGS, ID = 1.0mA, Tj = -55C VGS(th)1 VGS(th)2 VGS(th)3 2.0 1.0 Gate Current VGS = 20V, VDS = 0V VGS = 20V, VDS = 0V, Tj = +125C IGSS1 IGSS2 100 200 nAdc Drain Current VGS = 0V, VDS = 80V VGS = 0V, VDS = 100V, Tj = +125C VGS = 0V, VDS = 80V, Tj = +125C IDSS1 IDSS2 IDSS3 25 1.0 0.25 Adc mAdc mAdc rDS(on)1 rDS(on)2 0.065 0.070 rDS(on)3 0.132 VSD 1.4 Vdc Static Drain-Source On-State Resistance VGS = 12V, ID = 21.0A pulsed VGS = 12V, ID = 34.0A pulsed Tj = +125C VGS = 12V, ID = 21.0A pulsed Diode Forward Voltage VGS = 0V, ID = 34.0A pulsed T4-LDS-0121 Rev. 2 (101017) Max. Unit Vdc 4.0 Vdc 5.0 U-PKG (SMD-1) (TO-267AB) JANSR2N7268U, JANSF2N7268U See Figure 2 Page 1 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 DYNAMIC CHARACTERISTICS Parameters / Test Conditions Gate Charge: On-State Gate Charge Gate to Source Charge Gate to Drain Charge Symbol Min. Max. Qg(on) Qgs Qgd VGS = 12V, ID = 34.0A VDS = 50V 160 35 65 Unit nC SWITCHING CHARACTERISTICS Parameters / Test Conditions Symbol Switching time tests: Turn-on delay time Rinse time Turn-off delay time Fall time ID = 34.0A, VGS = 12Vdc, Gate drive impedance = 2.35, VDD = 50Vdc Diode Reverse Recovery Time di/dt 100A/s, VDD 30V, IF = 34.0A Min. Max. td(on) tr td(off) tf 45 190 170 130 trr 570 Unit ns ns POST-IRRADIATION ELECTRICAL CHARACTERISTICS (3) (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. Drain-Source Breakdown Voltage VGS = 0V, ID = 1mAdc V(BR)DSS 100 VGS(th)1 VGS(th)1 2.0 1.25 Gate-Source Voltage (Threshold) VDS VGS, ID = 1.0mA MSR VDS VGS, ID = 1.0mA MSF Gate Current VGS = 20V, VDS = 0V IGSS1 Drain Current VGS = 0V, VDS = 80V MSR VGS = 0V, VDS = 80V MSF IDSS1 Static Drain-Source On-State Voltage VGS = 12V, ID = 21.0A pulsed MSR VGS = 12V, ID = 21.0A pulsed MSF Diode Forward Voltage VGS = 0V, ID = 34.0A pulsed Max. Unit Vdc 4.0 4.5 Vdc 100 nAdc 25 50 Adc VDS(on) 1.365 1.89 Vdc VSD 1.4 Vdc NOTE: (3) Post-Irradiation Electrical Characteristics apply to devices subjected to Steady State Total Dose Irradiation testing in accordance with MIL-STD-750 Method 1019. Separate samples are tested for VGS bias (12V), and VDS bias (80V) conditions. T4-LDS-0121 Rev. 2 (101017) Page 2 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 Single Event Effect (SEE) Characteristics: Heavy Ion testing of the 2N7268 device was completed by similarity of die structure to the 2N7261. The 2N7261 has been characterized at the Texas A&M cyclotron. The following SOA curve has been established using the elements, LET, range, and Total Energy conditions as shown: 2N7268 (2N7261) TAMU Ar LET=8.3 Range =192um Total Energy=531MeV 110 100 90 TAMU Kr LET=27.8 Range =134um Total Energy=1032MeV Drain Bias, V 80 70 60 50 TAMU Ag LET=42.2 Range =119um Total Energy=1289MeV 40 30 20 10 0 0 -5 -10 -15 -20 -25 TAMU Au LET=85.4 Range =118um Total Energy=2247MeV Gate Bias, V It should be noted that total energy levels are considered to be a factor in SEE characterization. Comparisons to other datasets should not be based on LET alone. Please consult factory for more information. T4-LDS-0121 Rev. 2 (101017) Page 3 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 Figure 1: Case Outline and Pin Configuration for JANSR2N7268 & JANSF2N7268 T4-LDS-0121 Rev. 2 (101017) Page 4 of 5 TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED N-CHANNEL MOSFET Reference MIL-PRF-19500/603 NOTES: 1. Dimensions are in inches. 2. Millimeters are given for general information only. 3. The lid shall be electrically isolated from the drain, gate and source. 4. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Dimensions SMD-1 Symbol Inches BL BW CH LH LL1 LL2 LS1 LS2 LW1 LW2 Q1 Q2 Term 1 Term 2 Term 3 Min .620 .445 Max .630 .455 .142 .010 .020 .410 .420 .152 .162 .210 BSC .105 BSC .370 .380 .135 .145 .030 .035 Millimeters Min Max 15.75 16.00 11.30 11.56 3.60 0.26 0.50 10.41 10.67 3.86 4.11 5.33 BSC 2.67 BSC 9.40 9.65 3.43 3.68 0.76 0.89 Drain Gate Source Figure 2: Case Outline and Pin Configuration for JANSR2N7268U & JANSF2N7268U T4-LDS-0121 Rev. 2 (101017) Page 5 of 5