DNA30E2200PC
Single Diode
High Voltage Standard Rectifier
1 3
Part number
DNA30E2200PC
Backside: anode
FAV
F
VV1.24
RRM
30
2200
=
V= V
I= A
Recommended replacement:
DNA30E2200PZ
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20130123dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DNA30E2200PC
V = V
A²s
A²s
A²s
A²s
Symbol Definition
Ratings
typ. max.
I
R
V
IA
V
F
1.26
R0.7 K/W
R
min.
30
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
140
P
tot
210 WT = 25°C
C
RK/W
30
2200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Conditions Unit
1.53
T = 25°C
VJ
150
V
F0
V0.83T = °C
VJ
175
r
F
13.4 mΩ
V1.24T = °C
VJ
I = A
F
V
30
1.63
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V2200
max. re pe titiv e re verse b lockin g volta ge T = 25°C
VJ
C
J
7
j
unction capacitance V = V;700 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
370
400
495
480
A
A
A
A
315
340
685
665
2200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
2300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130123dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DNA30E2200PC
Ratings
Product M
a
r
k
i
n
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
yywwz
000000
Assembly Line
D
N
A
30
E
2200
PC
Part number
Diode
High Voltage Standard Rectifier
(>= 2000V)
Single Diode
TO-263AB (D2Pak) (2)
=
=
=
DNA30E2200PA TO-220AC (2) 2200
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
VJ
°C
T
stg
°C150
storage temperature -55
Weight g2
Symbol Definition typ. max.min.Conditions
virt ua l j un ction temp erature
Unit
F
C
N60
mount ing force w i th clip 20
I
RMS
RMS current 35 A
per terminal
175-55
DNA30E2200FE
DNA30E2200IY
i4-Pac (2HV)
TO-262 (2HV) (I2PAK)
2200
2200
TO-263
(
D2Pak
)
DNA30E2200PC-TUB Tube 50 509374DNA30E2200PC
Similar Part Package Voltage class
DNA30EM2200PC TO-263AB (D2Pak) (2) 2200
Delivery Mode Quantity Code No.Part Number Marking on Product
Alternative
Ordering
DNA30E2200PC 510322Tape & Reel 800DNA30E2200PCStandard
threshold voltage V0.83
mΩ
V
0 max
R
0 max
slope resistance * 10.2
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Rectifier
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130123dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DNA30E2200PC
W
c2
A
A1
c
L
E
2x e
L1
D
321
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
3x b2
E1
2x b
H
D1
Supplier
Option
L2
4
minmaxminmax
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
Dim. Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
0.098
4.28 0.169
All dimensions conform with
and/or within JEDEC standard.
2,54 BSC 0,100 BSC
2.5
1 3
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20130123dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DNA30E2200PC
0.001 0.01 0.1 1
150
200
250
300
23456789011
10
2
10
3
0.5 1.0 1.5 2.0
0
20
40
60
0 102030
0
10
20
30
40
50
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
0 25 50 75 100 125 150 175 200
0
10
20
30
40
IF
[A]
VF[V]
IFSM
[A]
t[s]
I2t
[A2s]
t[ms]
Ptot
[W]
IF(AV)M T]A[ amb [°C]
IF(AV)M
[A]
TC[°C]
ZthJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I2t versus time per diode
Fig. 4 Power dissipation vs. direct output current & ambient temperature Fig. 5 Max. forward current versus
case temperature
Fig. 6 Transient thermal impedance junction to case
t[ms]
Constants for ZthJC calculation:
iR
thi (K/W) ti(s)
1 0.03 0.0003
2 0.072 0.0065
3 0.131 0.027
4 0.367 0.105
50.1 0.8
0 25 50 75 100 125 150 175 200
T
VJ
= 150°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
=45°C
V
R
= 0 V
dc =
1
0.5
0.4
0.33
0.17
0.08
R
thKA
=
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
dc =
1
0.5
0.4
0.33
0.17
0.08
T
VJ
=150°C T
VJ
= 150°C
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130123dData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
