TGL41-6.8 thru TGL41-200A
Vishay General Semiconductor
Document Number: 88403
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Surface Mount TRANSZORB® Transient Voltage Suppressors
FEATURES
• Plastic MELF package
• Ideal for automated placement
• Glass passivated chip junction
• Available in uni-directional polarity only
• 400 W peak pulse power capability with a
10/1000 µs waveform, repetitive rate (duty
cycle): 0.01 % (200 W above 91 V)
• Excellent clamping capability
• Very fast response time
• Low incremental surge resistance
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 250 °C
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching
and lighting on ICs, MOSFET, signal lines of
sensor units for consumer, computer, industrial and
telecommunication.
MECHANICAL DATA
Case: DO-213AB (GL41)
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Blue band denotes the cathode which is
positive with respect to the anode under normal TVS
operation
PRIMARY CHARACTERISTICS
VBR 6.8 V to 200 V
PPPM 400 W, 200 W
PD1.0 W
IFSM 40 A
TJ max. 150 °C
DO-213AB (GL41)
Notes:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2. Rating is 200 W above 91 V
(2) Measured at 8.3 ms single half sine-wave or equivalent square wave duty cycle = 4 pulses per minute maximum
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBO VALUE UNIT
Peak pulse power dissipation with a 10/1000 µs waveform (1) (Fig. 1) PPPM 400 W
Power dissipation on infinite heatsink at TL = 75 °C PD1.0 W
Peak pulse current with a 10/1000 µs waveform (1) (Fig. 3) IPPM See next table A
Peak forward surge current, 8.3 ms single half sine-wave uni-directional only (2) I
FSM 40 A
Maximum instantaneous forward voltage at 25 A for uni-directional only VF 3.5 V
Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C
TGL41-6.8 thru TGL41-200A
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88403
Revision: 20-Oct-08
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAG E
VBR (V) (1)
TEST
CURRENT
AT IT (mA)
STAND-
OFF
VOLTAG E
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM ID
(µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAG E
AT IPPM VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF VBR (%/°C)
MIN. MAX.
TGL41-6.8 6.12 7.48 10 5.50 1000 37.0 10.8 0.060
TGL41-6.8A 6.45 7.14 10 5.80 1000 38.1 10.5 0.060
TGL41-7.5 6.75 8.25 10 6.05 500 34.2 11.7 0.064
TGL41-7.5A 7.13 7.88 10 6.40 500 35.4 11.3 0.064
TGL41-8.2 7.38 9.02 10 6.63 200 32.0 12.5 0.068
TGL41-8.2A 7.79 8.61 10 7.02 200 33.1 12.1 0.068
TGL41-9.1 8.19 10.0 1.0 7.37 50.0 29.0 13.8 0.071
TGL41-9.1A 8.65 9.55 1.0 7.78 50.0 29.9 13.4 0.071
TGL41 -10 9.00 11.0 1.0 8.10 10.0 26.7 15.0 0.076
TGL41 -10A 9.50 10.5 1.0 8.55 10.0 27.6 14.5 0.076
TGL41 -11 9.90 12.1 1.0 8.92 5.0 24.7 16.2 0.078
TGL41 -11A 10.5 11.6 1.0 9.40 5.0 25.6 15.6 0.078
TGL41-12 10.8 13.2 1.0 9.72 5.0 23.1 17.3 0.081
TGL41-12A 11.4 12.6 1.0 10.2 5.0 24.0 16.7 0.081
TGL41-13 11.7 14.3 1.0 10.5 5.0 21.1 19.0 0.084
TGL41-13A 12.4 13.7 1.0 11.1 5.0 22.0 18.2 0.084
TGL41-15 13.5 16.5 1.0 12.1 5.0 18.2 22.0 0.087
TGL41-15A 14.3 15.8 1.0 12.8 5.0 18.9 21.2 0.087
TGL41-16 14.4 17.6 1.0 12.9 5.0 17.0 23.5 0.089
TGL41-16A 15.2 16.8 1.0 13.6 5.0 17.8 22.5 0.089
TGL41-18 16.2 19.8 1.0 14.5 5.0 15.1 26.5 0.091
TGL41-18A 17.1 18.9 1.0 15.3 5.0 15.9 25.2 0.091
TGL41-20 18.0 22.0 1.0 16.2 5.0 13.7 29.1 0.093
TGL41-20A 19.0 21.0 1.0 17.1 5.0 14.4 27.7 0.093
TGL41-22 19.8 24.2 1.0 17.8 5.0 12.5 31.9 0.095
TGL41-22A 20.9 23.1 1.0 18.8 5.0 13.1 30.6 0.095
TGL41-24 21.6 26.4 1.0 19.4 5.0 11.5 34.7 0.097
TGL41-24A 22.8 25.2 1.0 20.5 5.0 12.0 33.2 0.097
TGL41-27 24.3 29.7 1.0 21.8 5.0 10.2 39.1 0.099
TGL41-27A 25.7 28.4 1.0 23.1 5.0 10.7 37.5 0.099
TGL41-30 27.0 33.0 1.0 24.3 5.0 9.2 43.5 0.100
TGL41-30A 28.5 31.5 1.0 25.6 5.0 9.7 41.4 0.100
TGL41-33 29.7 36.3 1.0 26.8 5.0 8.4 47.7 0.101
TGL41-33A 31.4 34.7 1.0 28.2 5.0 8.8 45.7 0.101
TGL41-36 32.4 39.6 1.0 29.1 5.0 7.7 52.0 0.102
TGL41-36A 34.2 37.8 1.0 30.8 5.0 8.0 49.9 0.102
TGL41-39 35.1 42.9 1.0 31.6 5.0 7.1 56.4 0.103
TGL41-39A 37.1 41.0 1.0 33.3 5.0 7.4 53.9 0.103
TGL41-43 38.7 47.3 1.0 34.8 5.0 6.5 61.9 0.104
TGL41-43A 40.9 45.2 1.0 36.8 5.0 6.7 59.3 0.104
TGL41-47 42.3 51.7 1.0 38.1 5.0 5.9 67.8 0.104
TGL41-47A 44.7 49.4 1.0 40.2 5.0 6.2 64.8 0.104
TGL41-51 45.9 56.1 1.0 41.3 5.0 5.4 73.5 0.105
TGL41-6.8 thru TGL41-200A
Vishay General Semiconductor
Document Number: 88403
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Notes:
(1) Pulse test: tp ≤ 50 ms
(2) Surge current waveform per Fig. 3 and derate per Fig. 2
(3) All terms and symbols are consistent with ANSI/IEEE C62.35
TGL41-51A 48.5 53.6 1.0 43.6 5.0 5.7 70.1 0.105
TGL41-56 50.4 61.6 1.0 45.4 5.0 5.0 80.5 0.106
TGL41-56A 53.2 58.8 1.0 47.8 5.0 5.2 77.0 0.106
TGL41-62 55.8 68.2 1.0 50.2 5.0 4.5 89.0 0.107
TGL41-62A 58.9 65.1 1.0 53.0 5.0 4.7 85.0 0.107
TGL41-68 61.2 74.8 1.0 55.1 5.0 4.1 98.0 0.107
TGL41-68A 64.6 71.4 1.0 58.1 5.0 4.3 92.0 0.107
TGL41-75 67.5 82.5 1.0 60.7 5.0 3.7 108 0.108
TGL41-75A 71.3 78.8 1.0 64.1 5.0 3.9 103 0.108
TGL41-82 73.8 90.2 1.0 66.4 5.0 3.4 118 0.108
TGL41-82A 77.9 86.1 1.0 70.1 5.0 3.5 113 0.108
TGL41-91 81.9 100 1.0 73.7 5.0 3.1 131 0.109
TGL41-91A 86.5 95.5 1.0 77.8 5.0 3.2 125 0.109
TGL41-100 90.0 110 1.0 81.0 5.0 1.39 144 0.109
TGL41-100A 95.0 105 1.0 85.5 5.0 1.46 137 0.109
TGL41-110 99.0 121 1.0 89.2 5.0 1.27 158 0.110
TGL41-110A 105 116 1.0 94.0 5.0 1.32 152 0.110
TGL41-120 108 132 1.0 97.2 5.0 1.16 173 0.110
TGL41-120A 114 126 1.0 102 5.0 1.21 165 0.110
TGL41-130 117 143 1.0 105 5.0 1.07 187 0.110
TGL41-130A 124 137 1.0 111 5.0 1.12 179 0.110
TGL41-150 135 165 1.0 121 5.0 0.93 215 0.111
TGL41-150A 143 158 1.0 128 5.0 0.97 207 0.111
TGL41-160 144 176 1.0 130 5.0 0.87 230 0.111
TGL41-160A 152 168 1.0 136 5.0 0.91 219 0.111
TGL41-170 153 187 1.0 138 5.0 0.82 244 0.111
TGL41-170A 162 179 1.0 145 5.0 0.85 234 0.111
TGL41-180 162 198 1.0 146 5.0 0.78 258 0.111
TGL41-180A 171 189 1.0 154 5.0 0.81 246 0.111
TGL41-200 180 220 1.0 162 5.0 0.70 287 0.111
TGL41-200A 190 210 1.0 171 5.0 0.73 274 0.111
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
DEVICE
TYPE
BREAKDOWN
VOLTAG E
VBR (V) (1)
TEST
CURRENT
AT IT (mA)
STAND-
OFF
VOLTAG E
VWM (V)
MAXIMUM
REVERSE
LEAKAGE
AT VWM ID
(µA)
MAXIMUM
PEAK
PULSE
CURRENT
IPPM (A) (2)
MAXIMUM
CLAMPING
VOLTAG E
AT IPPM VC (V)
MAXIMUM
TEMPERATURE
COEFFICIENT
OF VBR (%/°C)
MIN. MAX.
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
TGL41-6.8A-E3/96 0.134 96 1500 7" diameter plastic tape and reel
TGL41-6.8A-E3/97 0.134 97 5000 13" diameter plastic tape and reel
TGL41-6.8 thru TGL41-200A
Vishay General Semiconductor
www.vishay.com For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88403
Revision: 20-Oct-08
4
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise specified)
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
Figure 3. Pulse Waveform
td - Pulse Width
100
10
1
0.1
P
PPM
- Peak Pulse Power (kW)
0.1 µs 1.0 µs 10 µs 100 µs 1.0 ms 10 ms
TGL41-100 TGL200A
TGL41-6.8 TGL91A
Non-Repetitive Pulse
Waveform shown in Fig. 3
TA = 25 °C
TJ - Initial Temerature (°C)
100
50
25
0
Peak Pulse Power (P
PP
) or Current (I
PP
)
Derating in Percentace (%)
02550 100 150 200
75
75 125 175
t - Time (ms)
150
50
0
0 2.0 4.0
I
PPM
- Peak Pulse Current, % I
RSM
100
1.0 3.0
Peak Value
IPPM
10/1000 µs Waveform
as defined by R.E.A.
Half Value -
IPPM
IPP
2
TJ = 25 °C
Pulse Width (td)
is defined as the Point
where the Peak Current
decays to 50 % of IPPM
tr = 10 µs
td
Figure 4. Typical Junction Capacitance
Figure 5. Power Derating Curve
Figure 6. Maximum Non-Repetitive Peak Forward Surge Current
Uni-Directional Only
Measured at Stand-Off
Voltage VWM
V
BR
- Breakdown Voltage (V)
10 000
1000
100
10
C
J
- Junction Capacitance (pF)
1 10 100 1000
Uni-Directional
Measured at
Zero Bias
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TL - Lead Temerature (°C)
1.00
0.50
0.25
0
P
D
- Power Dissipation (W)
02550 100 150 200
0.75
75 125 175
Number of Cycles at 60 Hz
50
10
0
1100
Peak Forward Surge Current (A)
40
10
30
20
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
TGL41-6.8 thru TGL41-200A
Vishay General Semiconductor
Document Number: 88403
Revision: 20-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
5
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
D1 =
0.105
0.095
(2.67)
(2.41)
+ 0
- 0.008 (0.20)
D2
DO-213AB (GL41)
Solderable Ends
1
st
Band D2 = D1
1
st
Band Denotes Type and Positive End (Cathode)
0.138 (3.5)
MAX.
0.049 (1.25)
MIN.
0.118 (3.0)
MIN.
0.238 (6.0)
REF.
Mounting Pad Layout
0.022 (0.56)
0.018 (0.46)
0.022 (0.56)
0.018 (0.46)
0.205 (5.2)
0.185 (4.7)
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
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