T4-LDS-0040-2, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 1 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
Compliant
Schottky Barrier Diode
Ceramic Surface Mount
Qualified per MIL-PRF-19500/444
Quali f i ed Lev els:
JAN, JANT X, J AN TXV
and JANS
DESCRIPTION
This 1N57 1 1U B and 1N571 2U B Schottky barrier diode is ceramic enc ased and offers military
grade qualifications for high-reliability application s. Un idirectional as well as doub ler,
common anode and common cathode polari ties are availab le.
UB Package
Also available in:
DO-35 package
(axial-leaded)
1N5711-1, 1N5712-1,
1N6857-1, and 1N6858-1
DO-213AA package
(s urf ace mount )
1N5711UR-1, 1N5712UR-1,
1N6857UR-1, and
1N6858UR-1
Important: For the latest information, vis it our web site http://www.microsemi.com.
FEATURES
• Sur face mount equiv alent of JEDE C registered 1N5711, 1N5712 numbers.
• JAN, JANTX, JANTXV and commerci al qualifications also avail able per MIL-PRF-19500/444 on
“1N” numbers only.
(See Part Nomenclature for all available options).
• RoHS com pliant by des ign.
APPLICATIONS / BENEFITS
• Low reverse leakage characteristics.
• Low-profi le cera mic sur face mount pa ckag e (see package illustration).
• ESD sensitive to Class 1.
MAXIMUM RATINGS @ 25 ºC unles s other wis e stated
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: 1-800-446-1158 or
(978) 620-2600
Fax: (978) 689-0803
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044
Fax: +353 (0) 65 6822298
Website:
www.microsemi.com
Parameters/Test Conditions
Symbol
Value
Unit
Junction and Storage Temper ature
TJ and TSTG
-65 to +150
ºC
Thermal Resistance, Junc tion-to-Solder Pad
R
ӨJSP
100
ºC/W
Average Rectified Output Current:
1N5711UB (1)
1N5712UB
(2)
IO
33
75
mA
Solder Temperature @ 10 s
260
oC
NOTES: 1. At TEC and TSP = +140 °C, derate IO to 0 at +150 °C.
2. At TEC and TSP = +130 °C, derate IO to 0 at +150 °C.
T4-LDS-0040-2, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 2 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
• CASE: Ceramic.
• TERMINALS: Gold plating over nickel under plate.
• MARKING: Part number, date code, manufacturer’s ID.
• TAPE & REEL opti on: Standard per EIA-418D. Consult factory for quantities.
• WEIGHT: Approximately 0.04 grams.
• See Package Dimensions on last page.
JAN 1N5711 UB CA
Reliability Level
JAN = JAN lev el
JANTX = JANTX level
JANTXV = JANTXV level
JANS = JANS level
Blank = Commercial grade
JEDEC type number
(see Electrical Characteristics
table)
Polarity
CA = Common Anode
CC = Common Cathode
D = Doubler
Blank = Unidirectional
Surface Mount package
SYMBOLS & DEF INITI ONS
Symbol
Definition
C
Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage.
f
frequency
IR
Reverse Current: The dc current flowing from the external circuit into the cathode terminal at the specified voltage VR.
IO
Average Rectified Output Current: The Output Current averaged o ver a full cycle with a 50 Hz or 60 Hz sine-wave
input and a 180 degree conduction angle.
trr
Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from
the forward direction to the reverse direction and a specified decay point after a peak reverse current occurs.
V
(BR)
Breakdown Voltage: A voltage in the breakdown region.
V
F
Forward Voltage: A positive dc anode-cathode voltage the devi ce will exhibit at a specified forward current.
V
R
Reverse Voltage: A positive dc cathode-anode voltage below the breakdown region.
VRWM
Working Peak Reverse Voltage: The peak voltage excluding all transient voltages (ref JESD282-B). Also sometimes
known historically as PIV.
Common Anode (CA) Unidirectional (blank)
Doubler (D) C ommon C ath ode (CA)
T4-LDS-0040-2, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 3 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
TYPE
NUMBER
MINIMUM
BREAKDOWN
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
MAXIMUM
FORWARD
VOLTAGE
WORKING
PEAK
REVERSE
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
CURRENT
MAXIMUM
CAPACITANCE
@ VR = 0
VOLTS
f = 1.0 MHz
V(BR) @ 10 µA
VF @ 1 mA
VF @ IF
VRWM
IR @ VR
CT
Volts
Volts
V @ mA
V (p k)
nA
Volts
pF
1N5711UB
70
0.41
1.0 @ 15
50
200
50
2.0
1N5712UB
20
0.41
1.0 @ 35
16
150
16
2.0
NOTE:
1. Effective minority carr i er l ifetime (τ) is 100 pic o seconds.
T4-LDS-0040-2, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 4 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
VF – For ward V ol tage (V )
FIGURE 1
I-V C urve showin g typical Forwar d Volt age Variation
Temperatu r e for the 1N5712 Schott ky Diodes
VR – Revers e Voltag e ( V) (PULSED )
FIGURE 2
1N5712 Typical variation of Reverse
Cu rrent (IR) vs R everse Voltag e ( VR) at V ar i ous Temp er atures
I
R
– Reverse Current (nA)
I
F
– Forward Current (mA)
T4-LDS-0040-2, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 5 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
VF – For ward V ol tage (V)
FIGURE 3
I – V curve showin g typical For ward Voltag e Variation
Wit h Temp er ature S ch ott ky Di ode 1N5711
VR – Reverse Voltage (V) (PUL SED)
FIGURE 4
1N5711 Typi cal Variation of Rev er se Current (IR) vs R everse Volt age (VR)
at Various Temp er atures
IF – Forward Current (mA)
I
R
– Reverse Current (nA)
T4-LDS-0040-2, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 6 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
IF – F orward Current (mA) (P U LSED)
FIGURE 5
Typi cal Dynami c Resist anc e (RD) vs Forward Current (IF)
R
D
– Dynamic Resistance (Ohms)
T4-LDS-0040-2, Rev. 1 (6/4/13) ©2013 Microsemi Corporation Page 7 of 7
1N5711UB and 1N5712UB (CC, CA, & D)
Symbol
Dimensions
Note Symbol
Dimensions
Note
inch
millimeters
inch
millimeters
Min
Max
Min
Max
Min
Max
Min
Max
BH
0.046
0.056
1.17
1.42
LS1
.035
.039
0.89
0.99
BL
0.115
0.128
2.92
3.25
LS2
.071
.079
1.80
2.01
BW
0.085
0.108
2.16
2.74
LW
.016
.024
0.41
0.61
CL
-
0.128
-
3.25
r
-
.008
-
0.20
CW
-
0.108
-
2.74
r1
-
.012
-
0.31
LL1
0.022
0.038
0.56
0.97
r2
-
.022
-
.056
LL2
0.017
0.035
0.43
0.89
NOTES:
1. Dimensions are in inches. Millimeters are given for information only.
2. Ceramic package only.
3. Hatched areas on package denote metallized areas.
4. Pad 1 = Base, Pad 2 = Emitter, Pad 3 = Collector, Pad 4 = Shielding connected to the lid.
5. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.