CM800DY-24S - Mitsubishi Electric & Electronics USA, Inc.

Publication Date : September 2013

< IGBT MODULES >

CM800DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Collector current IC .............….......................… 790A *

Collector-emitter voltage VCES ......................… 1200V

Maximum junction temperature T jmax .............. 175°C

●Flat base Type

●Copper base plate

●RoHS Directive compliance

●UL Recognized under UL1557, File E323585

Dual switch (Half-Bridge) *. DC current rating is limited by power terminals.

APPLICATION

AC Motor Control, Motion/Servo Control, Power supply, etc.

OUTLINE DRAWING & INTERNAL CONNECTION Dimension in mm

INTERNAL CONNECTION

Tolerance otherwise specified

Division of Dimension Tolerance

0.5 to 3 ±0.2

over 3 to 6 ±0.3

over 6 to 30 ±0.5

over 30 to 120 ±0.8

over 120 to 400 ±1.2

G1 E2

(Es2)

Di1

Di2

Tr1

Tr2 C1C2E1

(Es1)

< IGBT MODULES >

CM800DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2013

MAXIMUM RATINGS (Tj=25 °C, unless otherwise specified)

Symbol Item Conditions Rating Unit

VCES Collector-emitter voltage G-E short-circuited 1200 V

VGES Gate-emitter voltage C-E short-circuited ± 20 V

DC, TC=117 °C (Note2, 4) 790 *

IC (Note2) 800

ICRM

Collector current

Pulse, Repetitive (Note3) 1600

Ptot Total power dissipation TC=25 °C (Note2, 4) 5355 W

DC (Note2) 790 *

IE (Note1) (Note2) 800

IERM (Note1)

Emitter current

Pulse, Repetitive (Note3) 1600

Visol Isolation voltage Terminals to base plate, RMS, f=60 Hz, AC 1 min 2500 V

Tjmax Maximum junction temperature Instantaneous event (overload) 175

Tcmax Maximum case temperature (Note4) 125

°C

Tjop Operating junction temperature Continuous operation (under switching) -40 ~ +150

Tstg Storage temperature - -40 ~ +125 °C

ELECTRICAL CHARACTERISTICS (T j=25 °C, unless otherwise specified)

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

ICES Collector-emitter cut-off current VCE =VCES , G-E short-circuited - - 1.0 mA

IGES Gate-emitter leakage current VGE=VGES , C-E short-circuited - - 0.5 μA

VGE(th) Gate-emitter threshold voltage IC=80 mA, VCE=10 V 5.4 6.0 6.6 V

IC=800 A, T j=25 °C - 1.95 2.40

VGE=15 V, T j=125 °C - 2.25 -

VCEsat

(Terminal) Refer to fig. of test circuit (Note5) Tj=150 °C - 2.35 -

IC=800 A, T j=25 °C - 1.70 2.15

VGE=15 V, T j=125 °C - 1.90 -

VCEsat

(Chip)

Collector-emitter saturation voltage

(Note5) T

j=150 °C - 1.95 -

Cies Input capacitance - - 80

Coes Output capacitance - - 16

Cres Reverse transfer capacitance

VCE=10 V, G-E short-circuited

- - 1.32

QG Gate charge VCC =600 V, IC=800 A, VGE=15 V - 1868 - nC

td(on) Turn-on delay time - - 800

tr Rise time VCC =600 V, IC=800 A, VGE=±15 V, - - 200

td(off) Turn-off delay time - - 600

tf Fall time RG=0 Ω, Inductive load - - 300

IE=800 A, T j=25 °C - 1.85 2.30

G-E short-circuited, T j=125 °C - 1.85 -

VEC (Note1)

(Terminal)

Refer to fig. of test circuit (Note5) Tj=150 °C - 1.85 -

IE=800 A, T j=25 °C - 1.70 2.15

G-E short-circuited, T j=125 °C - 1.70 -

VEC (Note1)

(Chip)

Emitter-collector voltage

(Note5) T

j=150 °C - 1.70 -

trr (Note1) Reverse recovery time VCC =600 V, IE=800 A, VGE=±15 V, - - 300 ns

Qrr (Note1) Reverse recovery charge RG=0 Ω, Inductive load - 42.8 - μC

Eon Turn-on switching energy per pulse VCC =600 V, IC=IE=800 A, - 107 -

Eoff Turn-off switching energy per pulse VGE =±15 V, RG=0 Ω, - 82 - mJ

Err (Note1) Reverse recovery energy per pulse T j=150 °C, Inductive load - 71 - mJ

Main terminals -chip, per switch,

RCC'+EE' Internal lead resistance TC=25 °C (Note4) - - 0.4 mΩ

rg Internal gate resistance Per switch - 2.45 - Ω

< IGBT MODULES >

CM800DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2013

THERMAL RESISTANCE CHARACTERISTICS

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

Rth(j-c)Q Junction to case, per IGBT (Note4) - - 28 K/kW

Rth(j-c)D Thermal resistance Junction to case, per DIODE (Note4) - - 45 K/kW

Case to heat sink, per 1/2 module,

Rth(c-s) Contact thermal resistance Thermal grease applied (Note4, 6) - 15 - K/kW

MECHANICAL CHARACTERISTICS

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

Main terminals M 8 screw 8.8 9.8 10.8

Mt Auxiliary G/Es Terminals M 4 screw 1.3 1.5 1.7 N·m

Mounting torque

Mounting to heat sink M 6 screw 3.5 4.0 4.5 N·m

m mass - - 1200 - g

ec Flatness of base plate On the centerline X, Y (Note7) -100 - +100 μm

Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).

2. Junction temperature (T j) should not increase beyond T jmax rating.

3. Pulse width and repetition rate should be such that the device junction temperature (T j) dose not exceed T jmax rating.

4. Case temperature (TC) and heat sink temperature (T S) are defined on the each surface (mounting side) of base plate and heat sink just under

the chips. Refer to the figure of chip location.

The heat sink thermal resistance should measure just under the chips.

5. Pulse width and repetition rate should be such as to cause negligible temperature rise. Refer to the figure of test circuit.

6. Typical value is measured by using thermally conductive grease of λ=0.9 W/(m·K).

7. Base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.

+: Convex

-: Concave

+: Convex

-: Concave

Bottom

Label side

Bottom

*. DC current rating is limited by power terminals.

RECOMMENDED OPERATING CONDITIONS

Limits

Symbol Item Conditions

Min. Typ. Max.

Unit

VCC (DC) Supply voltage Applied across C1-E2 - 600 850 V

VGEon Gate (-emitter drive) voltage Applied across G1-Es1/G2-Es2 13.5 15.0 16.5 V

RG External gate resistance Per switch 0 - 5.1 Ω

< IGBT MODULES >

CM800DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2013

CHIP LOCATION (Top view) Dimension in mm, tolerance: ±1 mm

Tr1/Tr2: IGBT, Di1/Di2: DIODE

TEST CIRCUIT

VGE=15V

Short-

circuited

C2E1

Es1

Es2

VGE =15V

C2E1

Es 1

Es 2

Short-

circuited

Short-

circuited

C2E1

Es1

Es2

Short-

circuited

Short-

circuited

C2E1

Es 1

Es 2

Short-

circuited

Tr1 Tr2 Di1 Di2

VCEsat test circuit VEC test circuit

< IGBT MODULES >

CM800DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2013

TEST CIRCUIT AND WAVEFORMS

VCC

-VGE

+VGE

-V

0 V

C2E1

Es1

Es2

Load

～

td(on)

10%

90 %

vGE

～

0 V

0 A

td(off)

Irr

Qrr=0.5×Irr×trr

0.5×Irr

trr

0 A

Switching characteristics test circuit and waveforms t rr, Q rr test waveform

0.1×I

0.1×V

t0 0.02×I

IEM

vEC

t0 V

VCC

0 A

IGBT Turn-on switching energy IGBT Turn-off switching energy DIODE Reverse recovery energy

Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)

< IGBT MODULES >

CM800DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2013

PERFORMANCE CURVES

OUTPUT CHARACTERISTICS

(TYPICAL)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

Tj=25 °C (Chip) V=15 V (Chip)

COLLECTOR CURRENT IC (A)

200

400

600

800

1000

1200

1400

1600

02468

COLLECTOR-EMITTER

SATURATION VOLTAGE VCEsat (V)

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0 200 400 600 800 1000 1200 1400 1600

=20 V 13.5

Tj=125 °C

Tj=150 °C

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A)

COLLECTOR-EMITTER SATURATION

VOLTAGE CHARACTERISTICS

(TYPICAL)

FREE WHEELING DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

T=25 °C (Chip) G-E short-circuited (Chip)

COLLECTOR-EMITTER

SATURATION VOLTAGE VCEsat (V)

6 8 10 12 14 16 18 20

Tj=25 °C

EMITTER CURRENT IE (A)

100

1000

10000

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=125 °C

Tj=25 °C

IC=1600 A

IC=800 A

Tj=150 °C

IC=320 A

GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V)

< IGBT MODULES >

CM800DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2013

PERFORMANCE CURVES

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC =600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: T j=125 °C

VCC =600 V, IC=800 A, VGE=±15 V, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: T j=125 °C

SWITCHING TIME (ns)

100

1000

10 100 1000

SWITCHING TIME (ns)

100

1000

0.1 1 10 100

td(on)

td(off)

td(on)

COLLECTOR CURRENT IC (A) EXTERNAL GATE RESISTANCE RG (Ω)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

HALF-BRIDGE

SWITCHING CHARACTERISTICS

(TYPICAL)

VCC =600 V, VGE=±15 V, RG=0 Ω,

INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: T j=125 °C

VCC =600 V, IC/IE=800 A, VGE=±15 V,

INDUCTIVE LOAD, PER PULSE

---------------: T j=150 °C, - - - - -: T j=125 °C

SWITCHING ENERGY Eon (mJ)

REVERSE RECOVERY ENERGY (mJ)

100

1000

10 100 1000

100

SWITCHING ENERGY Eoff (mJ)

SWITCHING ENERGY (mJ)

REVERSE RECOVERY ENERGY (mJ)

100

1000

0.1 1 10 100

COLLECTOR CURRENT IC (A)

EMITTER CURRENT IE (A)

EXTERNAL GATE RESISTANCE RG (Ω)

Eon

Eoff

Err

Eoff

Err

Eon

< IGBT MODULES >

CM800DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2013

PERFORMANCE CURVES

CAPACITANCE CHARACTERISTICS

(TYPICAL)

FREE WHEELING DIODE

REVERSE RECOVERY CHARACTERISTICS

(TYPICAL)

G-E short-circuited, T j=25 °C

VCC =600 V, VGE=±15 V, RG=0 Ω, INDUCTIVE LOAD

---------------: T j=150 °C, - - - - -: T j=125 °C

CAPACITANCE (nF)

0.1

100

1000

0.1 1 10 100

trr (ns), I rr (A)

100

1000

10 100 1000

Irr

Cies

trr

COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A)

GATE CHARGE CHARACTERISTICS

(TYPICAL)

TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS

(MAXIMUM)

VCC =600 V, I C= 800 A, T j=25 °C

Single pulse, TC=25°C

Rth(j-c)Q =28 K/kW, R th(j-c)D =45 K/kW

GATE-EMITTER VOLTAGE VGE (V)

Coes

Cres

NORMALIZED TRANSIENT THERMAL IMPEDANCE Z th(j-c)

0.001

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1 10

0 500 1000 1500 2000 2500 3000

GATE CHARGE QG (nC) TIME (S)

< IGBT MODULES >

CM800DY-24S

HIGH POWER SWITCHING USE

INSULATED TYPE

Publication Date : September 2013

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