CDBQR70-HF
SMD Schottky Barrier Diode
Page 1
QW-G1103
REV:B
O
Electrical Characteristics (at TA=25 C unless otherwise noted)
Symbol Typ
Parameter Conditions Min
Max
Unit
Forward voltage IF = 15mA
IF = 1mA VFV
1
0.41
Reverse current IRuA
VR = 50V
Capacitance between terminals
Reverse recovery time
f = 1 MHz, and 0 VDC reverse voltage
IF=IR=10mA,Irr=0.1xIR,RL=100 Ohm
CT
Trr
pF
nS
5
2
0.1
O
Maximum Rating (at TA=25 C unless otherwise noted)
Typ
IO
VR(RMS)
VR
VRM
Average forward rectified current
Reverse voltage
Peak reverse voltage
Symbol
Parameter Conditions Min
Max
Unit
RMS reverse voltage
mA
V
V
V
70
49
70
70
IFSM
Forward current,surge peak 8.3 ms single half sine-wave superimposed
on rate load(JEDEC method) A
0.1
PD
Power dissipation mW
125
OC
+125TSTG
Tj
Storage temperature
Junction temperature OC
+125
-65
Comchip Technology CO., LTD.
0.041(1.05)
0.037(0.95)
0.026(0.65)
0.022(0.55)
Dimensions in inches and (millimeter)
0.020(0.50) Typ.
0.022(0.55)
0.018(0.45)
0.012(0.30) Typ.
0402/SOD-923F
Features
-Low forward voltage.
-Designed for mounting on small surface.
-Extremely thin/leadless package.
-Majority carrier conduction.
Mechanical data
-Case: 0402/SOD-923F standard package,
molded plastic.
-Terminals: Gold plated, solderable per
MIL-STD-750,method 2026.
-Marking Code: Cathode band & BG
-Mounting position: Any
-Weight: 0.001 gram(approx.).
Io = 70 mA
VR = 70 Volts
RoHS Device
Halogen Free
SMD Schottky Barrier Diode
Page 2
QW-G1103
REV:B
RATING AND CHARACTERISTIC CURVES (CDBQR70-HF)
Capacitance between terminals (PF)
Reverse voltage (V)
Fig.3 - Capacitance between
terminals characteristics
Forward current (mA )
0.2 0.40
10
0.6
1
0.1
1.6
Forward voltage (V)
Fig. 1 - Forward characteristics
Reverse current ( A )
Reverse voltage (V)
100n
0.1n
1u
100u
10n
1n
0 20 40 70
Fig. 2 - Reverse characteristics
0 15 20 40
0
0.2
0.6
2.0
1.0
0
20
40
60
80
100
0 25 50 75 100 125 150
O
Ambient temperature ( C)
Average forward current(%)
Mounting on glass epoxy PCBs
Fig.4 - Current derating curve
120
100
f=1MHz
O
TA=25 C
O
0 C
O
125 C
O
75 C
O
25C
10 30 50
1.2
0.8
0.4
52510
1.41.21.00.8
O
-40 C
60
10u
O
25 C
O
75 C
O
125 C
O
0 C
O
-40 C
30 35
1.4
1.6
1.8
Comchip Technology CO., LTD.
SMD Schottky Barrier Diode
Page 3
QW-G1103
REV:B
Comchip Technology CO., LTD.
Index hole
o
120
Trailer Device Leader
10 pitches (min)10 pitches (min)
.......
.......
....... ..............
....... ..............
End Start
d
E
F
B W
A
P
P0
P1
D1
D2
D
W1
T
C
Direction of Feed
Reel Taping Specification
Polarity
BCdD D2
D1
E F P P0P1T
SYMBOL
A
W W1
(mm)
(inch) 0.026 0.004±0.045 0.004±0.024 0.004±0.061 + 0.004 7.008 0.04±2.362 MIN. 0.512 0.008±
SYMBOL
(mm)
(inch) 0.069 0.004±0.138 0.002±0.157 0.004±0.157 0.004±0.079 0.004±0.009 0.002±0.315 0.008±0.531 MAX.
0.75 0.10± 1.15 0.10±
4.00 0.10±
1.55 + 0.10
3.50 0.05±1.75 0.10±
60.0 MIN. 13.0 0.20±0.60 0.10±
4.00 0.10± 2.00 0.10± 0.22 0.05± 8.00 0.20± 13.5 MAX.
178 1±
0402
(SOD-923F)
0402
(SOD-923F)
SMD Schottky Barrier Diode
Page 4
QW-G1103
REV:B
Comchip Technology CO., LTD.
BG
Suggested PAD Layout
SIZE
(inch)
0.030
(mm)
0.750
0.500
0.700
0.020
0.028
1.250 0.049
E0.250 0.010
Standard Package
A
B
C
D
A
C
B
E
D
Marking Code
Park Number
CDBQR70-HF
Marking Code
BG
0402/SOD-923F
Case Type
Qty per Reel
(Pcs)
5000
0402/SOD-923F
Reel Size
(inch)
7
