Bulletin I0125J 07/97 IR180LM..CS05CB SERIES FAST RECOVERY DIODES Junction Size: Square 180 mils Wafer Size: 4" VRRM Class: 1000 and 1200 V Passivation Process: Glassivated MOAT Reference IR Packaged Part: 20ETF Series Major Ratings and Characteristics Parameters VFM Maximum Forward Voltage VRRM Reverse Breakdown Voltage Range Units 1350 mV Test Conditions TJ = 25C, IF = 20 A 1000 and 1200 V TJ = 25C, IRRM = 100 A (1) (1) Nitrogen flow on die edge. Mechanical Characteristics Nominal Back Metal Composition, Thickness Cr - Ni - Ag (1 KA - 4 KA - 6 KA) Nominal Front Metal Composition, Thickness 100% Al, (20 m) Chip Dimensions 180 x 180 mils (4.57x4.57 mm) - see drawing Wafer Diameter 100 mm, with std. < 110 > flat Wafer Thickness 260 m Maximum Width of Sawing Line 45 m Reject Ink Dot Size 0.25 mm diameter minimum Ink Dot Location See drawing Recommended Storage Environment Storage in original container, in dessicated nitrogen, with no contamination www.irf.com 1 IR180LM..CS05CB Series Bulletin I0125J 07/97 Ordering Information Table Device Code IR 180 L M 12 C S05 CB 1 2 3 4 5 6 7 8 1 - International Rectifier Device 2 - Chip Dimension in Mils 3 - Type of Device: L = Wire Bondable Fast Recovery Diode 4 - Passivation Process: M = Glassivated MOAT 5 - Voltage code: Code x 100 = VRRM 6 - Metallization: C = Aluminium (Anode) - Silver (Cathode) 7 - Fast Recovery Type: S05 = 500 nsec 8 - CB Available Class 10 = 1000 V 12 = 1200 V = Probed Uncut Die (wafer in box) None = Probed Die in chip carrier Outline Table All dimensions are in microns 2 www.irf.com IR180LM..CS05CB Series Bulletin I0125J 07/97 Wafer Layout TOP VIEW N 293 Basic Cells All dimensions are in millimeters www.irf.com 3