SCHOTTKY RECTIFIER 3 Amp
15MQ040NPbF
Bulletin PD-20775 06/04
1
www.irf.com
Major Ratings and Characteristics
IFDC 3 A
VRRM 40 V
IFSM @ tp = 5 µs sine 330 A
VF@ 2Apk, TJ=125°C 0.43 V
TJrange - 40 to 150 °C
Characteristics Value Units
Description/ Features
The 15MQ040NPbF Schottky rectifier is designed to be used
for low-power applications where a reverse voltage of 40 volts
is ancountered and surface mountable is required.
Applications
Switching power supplies
Meter protection
Reverse protection for power input to PC board circuits
Battery isolation and charging
Low threshold voltage diode
Free-wheeling or by-pass diode
Low voltage clamp
Features
Surface mountable
Extremely low forward voltage
Improved reverse blocking voltage capability relative
to other similar size Schottky
Compact size
Lead-Free ("PbF" suffix)
Case Styles
15MQ040NPbF
SMA
IF(AV) = 3Amp
VR = 40V
15MQ040NPbF
Bulletin PD-20775 06/04
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Part number 15MQ040NPbF
VRMax. DC Reverse Voltage (V)
VRWM Max. Working Peak Reverse Voltage (V) 40
Voltage Ratings
VFM Max. Forward Voltage Drop (1) 0.42 V @ 1A
* See Fig. 1 0.49 V @ 2A
0.34 V @ 1A
0.43 V @ 2A
IRM Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 20 mA TJ = 125 °C
VF(TO) Threshold Voltage 0.26 V TJ = TJ max.
rtForward Slope Resistance 64.6 mΩ
CTTypical Junction Capacitance 134 pF VR = 10VDC, TJ = 25°C, test signal = 1Mhz
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated VR)
TJ = 25 °C
TJ = 125 °C
VR = rated VR
Electrical Specifications
Parameters 15MQ Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
TJMax. Junction Temperature Range (*) -40 to 150 °C
Tstg Max. Storage Temperature Range -40 to 150 °C
RthJA Max. Thermal Resistance Junction 80 °C/W DC operation
to Ambient
wt Approximate Weight 0.07(0.002) g (oz.)
Case Style SMA Similar D-64
Device Marking IR3F
Thermal-Mechanical Specifications
Parameters 15MQ Units Conditions
Absolute Maximum Ratings
IF(AV) Max. Average Forward Current 2.1 A 50% duty cycle @ TL = 105 °C, rectangular wave form.
* See Fig. 4 On PC board 9mm2 island(.013mm thick copper pad area)
IFSM Max. Peak One Cycle Non-Repetitive 330 5µs Sine or 3µs Rect. pulse
Surge Current * See Fig. 6 140 10ms Sine or 6ms Rect. pulse
EAS Non-Repetitive Avalanche Energy 6.0 mJ TJ = 25 °C, IAS = 1A, L = 12mH
IAR Repetitive Avalanche Current 1.0 A
Parameters 15MQ Units Conditions
AFollowing any rated
load condition and
with rated VRRM applied
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)
15MQ040NPbF
Bulletin PD-20775 06/04
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Fig. 2 - Typical Peak Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 1 - Maximum Forward Voltage Drop Characteristics
0.1
1
10
0.20.30.40.50.60.70.80.9
Instantaneous Forward Current - I (A)
T = 150°C
T = 125°C
T = 25°C
J
J
J
F
FM
Forward Voltage Drop - V (V)
0.001
0.01
0.1
1
10
100
0 5 10 15 20 25 30 35 40
R
R
125°C
100°C
75°C
50°C
25°C
Reverse Current - I (mA)
T = 150°C
J
Reverse Voltage - V (V)
10
100
1000
0 5 10 15 20 25 30 35 40 45
R
T
Junction Capacitance - C (pF)
T = 2 5 ° C
J
Reverse Voltage - V (V)
15MQ040NPbF
Bulletin PD-20775 06/04
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Fig. 4 - Maximum Average Forward Current
Vs. Allowable Lead Temperature
Fig. 5 - Maximum Average Forward Dissipation
Vs. Average Forward Current
Fig. 6 - Maximum Peak Surge Forward Current Vs. Pulse Duration
(2) Formula used: TC = TJ - (Pd + PdREV) x RthJC
;
Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1
= 80% rated VR
100
1000
10 100 1000 10000
FSM
p
At Any Rated Load Condition
And With Rated V Applied
Fo l l o w in g Su rg e
RRM
Square Wave Pulse Duration - t (mic rosec )
Non-Repe titive Surge Current - I (A)
30
40
50
60
70
80
90
100
110
120
130
140
150
00.511.522.53
DC
F( A V )
se e note ( 2)
Allowable Case Temperature - (°C)
Sq ua re wa ve (D = 0.50)
80% Rated V a pplied
R
Average Forward Current - I (A)
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
00.511.522.53
DC
Average Power Loss - (Watts)
F( A V )
RM S Li m it
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
Average Forward Current - I (A)
15MQ040NPbF
Bulletin PD-20775 06/04
www.irf.com 5
IR LOGO
PYWWX
"Y" = 1st digit of the YEAR "standard product"
"P" = "Lead-Free"
2nd digit of the YEAR
SITE ID
WEEK
CURRENT
VOLTAGE
IR3F
2.50 (.098)
2.90 (.114)
4.00 (.157)
4.60 (.181)
1.40 (.055)
1.60 (.062)
.152 (.006)
.305 (.012)
2.00 (.078)
2.44 (.096)
0.76 (.030)
1.52 (.060)
.103 (.004)
.203 (.008)
4.80 (.188)
5.28 (.208)
2.10 MAX.
(.085 MAX. )
5.53 (.218)
1.27 MIN.
(.050 MIN.)
1.47 MIN.
(.058 MIN.)
SOLDERING PAD
CATHODE ANODE
1 2
12
POLARITY PART NUMBER
Device Marking: IR3F
Dimensions in millimeters and (inches)
Outline SMA
For recommended footprint and soldering techniques refer to application note #AN-994
Outline Table
Marking & Identification
Each device has 2 rows for identification. The first row designates the device as manufactured by International
Rectifier, indicated by the letters "IR", and the Part Number (indicates the current, the voltage rating and
Schottky Generation). The second row indicates the year, the week of manufacturing and the Site ID.
15MQ040NPbF
Bulletin PD-20775 06/04
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
Visit us at www.irf.com for sales contact information. 06/04
Tape & Reel Information
Dimensions in millimetres and (inches)
Ordering Information Table
Device Code
15
24
3
1- Current Rating
2- M = SMA
3- Q = Schottky Q Series
4- Voltage Rating (040 = 40V)
5- N = New SMA
6-y none= Box (1000 pieces)
y TR = Tape & Reel (7500 pieces)
7-y none= Standard Production
y PbF = Lead-Free
15 M Q 040 N TR PbF
67
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
