JANTXV1N5614 - MICROSEMI

VOIDLESS-HERMETICALLY-SEALED

STANDARD RECOVERY GLASS

TIFIER

Microsemi

Scottsdale Division

8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Page 1

1-15-2007 REV C

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N5614 thru 1N5622

1N5614 – 1N5622

DESCRIPTION APPEARANCE

This “standard recovery” rectifier diode series is military qualified to MIL-PRF-

19500/427 and is ideal for high-reliability applications where a failure cannot be

tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak

reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-

glass construction using an internal “Category I” metallurgical bond. These

devices are also available in surface mount MELF package configurations by

adding a “US” suffix (see separate data sheet for 1N5614US thru 1N5622US).

Microsemi also offers numerous other rectifi er pro ducts to meet higher and lower

current ratings with various recovery time speed requir ements including fast and

ultrafast device types in both throu gh-hole and surface mount packages.

“A” Package

IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com

FEATURES APPLIC ATIONS / BENEFITS

• Popular JEDEC registered 1N5614 to 1N5622 series

• Voidless hermetically s ealed glass package

• Triple-Layer Passivation

• Internal “Category I” Metallurgical bonds

• Working Peak Reverse Voltage 200 to 1000 Volts.

• JAN, JANTX, JANTXV, and JANS available per MIL-

PRF-19500/427

• Surface mount equivalents also avai lable in a square

end-cap MELF configuration with “US” suffix (see

separate data sheet for 1N5614US thru 1 N5622US)

• Standard recovery 1 Amp rectifiers 200 to 1000 V

• Military and other high-reliability applications

• General rectifier applications inclu din g bridges, half-

bridges, catch diodes, etc.

• High forward surge current capability

• Extremely robust construction

• Low thermal resistance

• Controlled avalanche with peak reverse power

capability

• Inherently radiation hard as described in Microsemi

MicroNote 050

MAXIMUM RAT ING S MECHANICAL AND PACKAGING

• Junction & Storage Temperature: -65oC to +200oC

• Thermal Resistance: 38oC/W junction to lead at 3/8

inch (10 mm) lead length from body

• Thermal Impedance: 4.5oC/W @ 10 ms heating time

• Average Rectified For ward Current (IO): 1.0 Amps @

TA = 55ºC and 0.75 Amps @ TA = 100ºC

• Forward Surge Current: 30 Amps @ 8.3 ms half-sine

• Solder Temperatures: 260ºC for 10 s (maximum)

• CASE: Hermetically sealed voidless hard glass with

Tungsten slugs (package dimensions on last page)

• TERMINATIONS: Axial leads are copper with

Tin/Lead (Sn/Pb) finish. Note: Previous JANS

inventory had solid Silver axial-leads an d no finish.

• MARKING: Body paint and part number, etc.

• POLARITY: Cathode band

• TAPE & REEL option: Standard per EIA-296

• WEIGHT: 340 mg

ELECTRICAL CHARACTERISTICS

TYPE

WORKING

PEAK

REVERSE

VOLTAGE VRWM

MINIMUM

BREAKDOWN

VOLTAGE

VBR @ 50μA

AVERAGE

RECTIFIED

CURRENT

IO @ TA

(NOTE 1)

FORWARD

VOLTAGE

(MAX.)

VF @ 3A

REVERSE

CURRENT

(MAX.)

IR @ VRWM

MAXIMUM

SURGE

CURRENT

IFSM

(NOTE 2)

REVERSE

RECOVERY

(NOTE 3)

trr

VOLTS VOLTS AMPS VOLTS

μA AMPS μs

55oC 100oC 25oC 100oC

1N5614

1N5616

1N5618

1N5620

1N5622

200

400

600

800

1000

220

440

660

880

1100

1.00

.750

0.8 MIN.

1.3 MAX.

0.5

2.0

NOTE 1: From 1 Amp at TA = 55oC, derate linearly at 5.56 mA/ oC to 0.75 Amp at TA = 100oC. From TA = 100oC,

derate linearly at 7.5 mA/oC to 0 Amps at TA = 200 oC. These ambient ratings are for PC boards where thermal

resistance from mounting point to ambient is sufficiently controll ed where TJ(max) does not exceed 175 oC.

NOTE 2: TA = 100oC, f = 60 Hz, IO = 750 mA for ten 8.3 ms surges @ 1 minute intervals

NOTE 3: IF = 0.5A, IRM = 1A, IR(REC) = 0.250A

VOIDLESS-HERMETICALLY-SEALED

STANDARD RECOVERY GLASS

RECTIFIERS

WWW.Microsemi .COM

SCOTTSDALE DIVISION

1N5614 thru 1N5622

1N5614 – 1N5622

SYMBOLS & DEFINITI ONS

Symbol Definition

VBR Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current

VRWM Working Peak Reverse Voltage: The maximum peak vo ltage that can be applied over the operating

temperature range

IOAverage Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave

input and a 180 degree conduction angle

VFMaximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current

IRMaximum Leakage Current: The maximum leakage current that will flow at the specified voltage and

temperature

C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage

trr

Reverse Recovery Time: The time interval between the instant the current passes through zero when

changing from the forward direction to the reverse direction and a specified decay point after a peak reverse

current occurs.

GRAPHS

FIGURE 1 FIGURE 2

TYPICAL FORWARD VOLTAGE v s FO RWARD CURRENT TYPICAL REVERSE CURRENT vs PIV

Microsemi

Scottsdale Division Page 2

1-15-2007 REV C 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503