TLV2422, TLV2422A, TLV2422Y
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER 1997 – REVISED APRIL 2001
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Output Swing Includes Both Supply Rails
D
Extended Common-Mode Input Voltage
Range ...0 V to 4.5 V (Min) With 5-V Single
Supply
D
No Phase Inversion
D
Low Noise . . . 18 nV/√Hz Typ at f = 1 kHz
D
Low Input Offset Voltage
950 µV Max at TA = 25°C (TLV2422A)
D
Low Input Bias Current ...1 pA Typ
D
Micropower Operation ...50 µA Per
Channel
D
600-Ω Output Drive
D
Available in Q-Temp Automotive
HighRel Automotive Applications
Configuration Control / Print Support
Qualification to Automotive Standards
description
The TLV2422 and TLV2422A are dual low-voltage
operational amplifiers from Texas Instruments.
The common-mode input voltage range for this
device has been extended over the typical CMOS
amplifiers making them suitable for a wide range
of applications. In addition, the devices do not
phase invert when the common-mode input is
driven to the supply rails. This satisfies most
design requirements without paying a premium
for rail-to-rail input performance. They also exhibit
rail-to-rail output performance for increased
dynamic range in single- or split-supply
applications. This family is fully characterized at
3-V and 5-V supplies and is optimized for
low-voltage operation. The TLV2422 only requires
50 µA of supply current per channel, making it
ideal for battery-powered applications. The
TLV2422 also has increased output drive over
previous rail-to-rail operational amplifiers and can
drive 600-Ω loads for telecom applications.
Other members in the TLV2422 family are the
high-power, TLV2442, and low-power, TLV2432,
versions.
The TLV2422, exhibiting high input impedance and low noise, is excellent for small-signal conditioning for
high-impedance sources, such as piezoelectric transducers. Because of the micropower dissipation levels and
low-voltage operation, these devices work well in hand-held monitoring and remote-sensing applications. In
addition, the rail-to-rail output feature with single- or split-supplies makes this family a great choice when
interfacing with analog-to-digital converters (ADCs). For precision applications, the TL V2422A is available with
a maximum input offset voltage of 950 µV.
If the design requires single operational amplifiers, see the TI TLV2211/21/31. This is a family of rail-to-rail output
operational amplifiers in the SOT-23 package. Their small size and low power consumption, make them ideal
for high density, battery-powered equipment.
Copyright 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Advanced LinCMOS is a trademark of Texas Instruments.
Figure 1
VOH– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
0
5
2
0816243240
IOH – High-Level Output Current – mA
4
1
3
412202836
TA = 85°C
TA = 125°C
TA = –40°C
TA = 25°C
VDD = 5 V
On products compliant to MIL-PRF-38535, all parameters are tested
unless otherwise noted. On all other products, production
processing does not necessarily include testing of all parameters.
TLV2422, TLV2422A, TLV2422Y
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER 1997 – REVISED APRIL 2001
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
AVAILABLE OPTIONS
PACKAGED DEVICES
TAVIOmax
AT 25°CSMALL
OUTLINE
(D)
CHIP CARRIER
(FK) CERAMIC DIP
(JG) TSSOP
(PW)
CERAMIC
FLAT PACK
(U)
CHIP FORM
(Y)
0°C to 70°C2.5 mV TLV2422CD — — TLV2422CPWLE —
40°Cto85°C
950 µV TLV2422AID — — TLV2422AIPWLE —
–
40°C
to
85°C
µ
2.5 mV TLV2422ID — — — —
40
°
Cto125
°
C
950 µV TLV2422AQD — — — — TLV2422Y
–
40°C
to
125°C
µ
2.5 mV TLV2422QD — — — —
–55
°
Cto125
°
C
950 µV—TLV2422AMFK TLV2422AMJG —TLV2422AMU
–
55°C
to
125°C
µ
2 mV —TLV2422MFK TLV2422MJG —TLV2422MU
The D packages are available taped and reeled. Add R suffix to device type (e.g., TL V2422CDR). The PW package is available only left-end taped
and reeled. Chips are tested at 25°C.
D OR JG PACKAGE
(TOP VIEW)
1
2
3
4
8
7
6
5
1OUT
1IN–
1IN+
VDD –/GND
VDD+
2OUT
2IN–
2IN+
PW PACKAGE
(TOP VIEW)
NC
VDD +
2OUT
2IN –
2IN +
NC
1OUT
1IN –
1IN +
VDD–/GND
1
2
3
4
5
10
9
8
7
6
U PACKAGE
(TOP VIEW)
3212019
910111213
4
5
6
7
8
18
17
16
15
14
NC
2OUT
NC
2IN–
NC
NC
1IN–
NC
1IN+
NC
NC
1OUT
NC
2IN+
NC NC
NC
NC VDD+
VDD–
FK PACKAGE
(TOP VIEW)
/GND
NC – No internal connection
1
2
3
4
8
7
6
5
1OUT
1IN–
1IN+
VDD–/GND
VDD+
2OUT
2IN–
2IN+
NC – No internal connection
TLV2422, TLV2422A
RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER 1997 – REVISED APRIL 2001
Advanced LinCMOS
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
•3
equivalent schematic (each amplifier)
Q27
R9
Q29Q22
Q23
Q26
Q25
Q24
Q31 Q34 Q36
Q32
Q33 Q35
Q37
D1
Q30
R10
VB3
VB2
VB4
VDD+
VDD–/GND
OUT
R8
R1 R2
Q2 Q5
Q1 Q4
Q3
Q12
Q11
Q10Q6
Q7
Q8
Q9
VB3
VB4
C1
C2
C3
R5
R6
Q13 Q15
Q16
Q17
Q14
Q19
Q18
Q20
Q21
R7
R3 R4
V
B2
IN+
IN–
VB1
COMPONENT
COUNT
Transistors
Diodes
Resistors
Capacitors
69
5
26
6
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) 12 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, VID (see Note 2) ±VDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage, VI (any input, see Note 1): C and I suffix –0.3 V to VDD
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input current, II (each input) ±5 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output current, IO ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current into VDD+ ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total current out of VDD– ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short-circuit current at (or below) 25°C (see Note 3) unlimited. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total power dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA: C suffix 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I suffix –40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Q suffix –40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
M suffix –55°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to the midpoint between VDD+ and VDD –.
2. Differential voltages are at IN+ with respect to IN–. Excessive current flows if input is brought below VDD– – 0.3 V.
3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum
dissipation rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGE
T
A
≤ 25°CDERATING F ACTOR T
A
= 70°C T
A
= 85°C T
A
= 125°C
PACKAGE
A
POWER RATING ABOVE TA = 25°C
A
POWER RATING
A
POWER RATING
A
POWER RATING
D725 mW 5.8 mW/°C464 mW 377 mW 145 mW
FK
JG
1375 mW
1050 mW
11.0 mW/°C
8 4 mW/
°
C
880 mW
672 mW
715 mW
546 mW
275 mW
210 mW
JG
PW
1050
mW
525 mW
8
.
4
mW/°C
4.2 mW/°C
672
mW
336 mW
546
mW
273 mW
210
mW
105 mW
PW
U
525
mW
675 mW
4.2
mW/ C
5.4 mW/°C
336
mW
432 mW
273
mW
350 mW
105
mW
135 mW
recommended operating conditions
C SUFFIX I SUFFIX Q SUFFIX M SUFFIX
MIN MAX MIN MAX MIN MAX MIN MAX
Supply voltage, VDD±2.7 10 2.7 10 2.7 10 2.7 10 V
Input voltage range, VIVDD–VDD+ –0.8 VDD–VDD+ –0.8 VDD–VDD+ –0.8 VDD–VDD+ –0.8 V
Common-mode input voltage, VIC VDD–VDD+ –0.8 VDD–VDD+ –0.8 VDD–VDD+ –0.8 VDD–VDD+ –0.8 V
Operating free-air temperature, TA0 70 –40 85 –40 125 –55 125 °C
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
T†
TLV2422C
UNIT
PARAMETER
TEST
CONDITIONS
T
A
†
MIN TYP MAX
UNIT
VIO
In
p
ut offset voltage
25°C 300 2000
µV
V
IO
Input
offset
voltage
Full range 2500 µ
V
αVIO
Tem
p
erature coefficient of in
p
ut offset voltage
25°C
2
µV/°C
αVIO
Temperature
coefficient
of
input
offset
voltage
to 70°C
2
µ
V/°C
Input offset voltage long-term drift (see Note 4) VIC = 0,
VO=0
VDD± = ±2.5 V,
RS=50Ω
25°C 0.003 µV/mo
IIO
In
p
ut offset current
VO
=
0
,
RS
=
50
Ω
25°C 0.5 60 p
A
I
IO
Input
offset
current
Full range 150
pA
IIB
In
p
ut bias current
25°C 1 60 p
A
I
IB
Input
bias
current
Full range 150
pA
VICR
Common mode in
p
ut voltage range
|VIO|≤5mV
RS=50Ω
25°C0
to
2.5
–0.25
to
2.75
V
V
ICR
Common
-
mode
input
voltage
range
|V
IO
|
≤
5
mV
,
R
S =
50
Ω
Full range 0
to
2.2
V
IOH = –100 µA 25°C 2.97
VOH High-level output voltage
IOH = 500 µA
25°C 2.75 V
I
OH = –
500
µ
A
Full range 2.5
VIC = 0, IOL = 100 µA 25°C 0.05
VOL Low-level output voltage
VIC =0
IOL = 250 µA
25°C 0.2 V
V
IC =
0
,
I
OL =
250
µ
A
Full range 0.5
V25V
R10kه
25°C 6 10
AVD Large-signal differential voltage amplification VIC = 2.5 V,
VO=1Vto2V
R
L =
10
kه
Full range 3V/mV
VD
gg g
VO
=
1
V
to
2
V
RL = 1 MΩ‡25°C 700
ri(d) Differential input resistance 25°C1012 Ω
ri(c) Common-mode input resistance 25°C1012 Ω
ci(c) Common-mode input capacitance f = 10 kHz 25°C 8 pF
zoClosed-loop output impedance f = 100 kHz, AV = 10 25°C 130 Ω
CMRR
Common mode rejection ratio
V
IC
= 0 to 2.5 V, V
O
= 1.5 V, 25°C 70 83
dB
CMRR
Common
-
mode
rejection
ratio
IC ,O,
RS = 50 ΩFull range 70
dB
kSVR
Su
pp
ly voltage rejection ratio (∆VDD/∆VIO)
V
DD
= 2.7 V to 8 V, 25°C 80 95
dB
k
SVR
Supply
-
voltage
rejection
ratio
(∆V
DD
/∆V
IO
)
DD ,
VIC = VDD/2, No load Full range 80
dB
IDD
Su
pp
ly current
VO=15V
No load
25°C 100 150
µA
I
DD
Supply
current
V
O =
1
.
5
V
,
No
load
Full range 175 µ
A
†Full range is 0°C to 70°C.
‡Referenced to 2.5 V
NOTE 4: Typical values are based on the input of fset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
6POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
T†
TLV2422I TLV2422AI
UNIT
PARAMETER
TEST
CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
VIO
In
p
ut offset voltage
25°C 300 2000 300 950
µV
V
IO
Input
offset
voltage
Full range 2500 1500 µ
V
αVIO
Temperature
coefficient of in
p
ut
25°C
2
2
µV/°C
αVIO coe
ffi
c
i
en
t
o
f
i
npu
t
offset voltage to 70°C
2
2
µ
V/°C
Input offset voltage
long-term drift (see
Note 4)
VIC = 0,
VO = 0, VDD± = ±2.5 V,
RS = 50 Ω25°C0.003 0.003 µV/mo
IIO
In
p
ut offset current
25°C 0.5 60 0.5 60 p
A
I
IO
Input
offset
current
Full range 150 150
pA
IIB
In
p
ut bias current
25°C 1 60 1 60 p
A
I
IB
Input
bias
current
Full range 150 150
pA
VICR
Common-mode input
|VIO|≤5mV
RS=50Ω
25°C0
to
2.5
–0.25
to
2.75
0
to
2.5
–0.25
to
2.75
V
V
ICR voltage range
|V
IO
|
≤
5
mV
,
R
S =
50
Ω
Full range 0
to
2.2
0
to
2.2
V
Hi h l l t t
IOH = –100 µA 25°C 2.97 2.97
VOH High-level output
voltage
IOH = 500 µA
25°C 2.75 2.75 V
voltage
I
OH = –
500
µ
A
Full range 2.5 2.5
Llltt
VIC = 0, IOL = 100 µA 25°C 0.05 0.05
VOL Low-level output
voltage
VIC =0
IOL = 250 µA
25°C 0.2 0.2 V
voltage
V
IC =
0
,
I
OL =
250
µ
A
Full range 0.5 0.5
Large
-
signal
V25V
R10kه
25°C 6 10 6 10
AVD
Large signal
differential voltage VIC = 2.5 V,
VO=1Vto2V
R
L =
10
kه
Full range 3 3 V/mV
VD
amplification
VO
=
1
V
to
2
V
RL = 1 MΩ‡25°C 700 700
ri(d) Differential input
resistance 25°C1012 1012 Ω
ri(c) Common-mode input
resistance 25°C1012 1012 Ω
ci(c) Common-mode input
capacitance f = 10 kHz 25°C 8 8 pF
zoClosed-loop output
impedance f = 100 kHz, AV = 10 25°C 130 130 Ω
CMRR
Common-mode V
IC
= 0 to 2.5 V, V
O
= 1.5 V, 25°C 70 83 70 83
dB
CMRR
rejection ratio
IC ,O,
RS = 50 ΩFull range 70 70
dB
kSVR
Supply-voltage
rejection ratio
V
DD
= 2.7 V to 8 V, 25°C 80 95 80 95
dB
k
SVR re
j
ec
ti
on ra
ti
o
(∆VDD/∆VIO)
DD ,
VIC = VDD/2, No load Full range 80 80
dB
IDD
Su
pp
ly current
VO=15V
No load
25°C 100 150 100 150
µA
I
DD
Supply
current
V
O =
1
.
5
V
,
No
load
Full range 175 175 µ
A
†Full range is – 40°C to 85°C.
‡Referenced to 2.5 V
NOTE 4: Typical values are based on the input of fset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 3 V
PARAMETER TEST CONDITIONS T
A†
TLV2422C, TL V2422I
TLV2422AI UNIT
A
MIN TYP MAX
V 15Vt 35V
R10kه
25°C 0.01 0.02
SR Slew rate at unity gain
V
O =
1
.
5
V
t
o
3
.
5
V
,
CL = 100 pF‡
R
L =
10
kه
,Full
range 0.008 V/µs
V
Equivalent in
p
ut noise voltage
f = 10 Hz 25°C 100
nV/√Hz
V
n
Equivalent
input
noise
voltage
f = 1 kHz 25°C 23 n
V/√H
z
VN(PP)
Peak to
p
eak equivalent in
p
ut noise voltage
f = 0.1 Hz to 1 Hz 25°C 2.7
µV
V
N(PP)
Peak
-
to
-
peak
equivalent
input
noise
voltage
f = 0.1 Hz to 10 Hz 25°C 4 µ
V
InEquivalent input noise current 25°C 0.6 fA√Hz
THD+N
Total harmonic distortion
p
lus noise
VO = 0.5 V to 2.5 V,
f 1 kHz
AV = 1
25°C
0.25%
THD
+
N
Total
harmonic
distortion
plus
noise
f
=
1
kH
z,
RL = 10 kهAV = 10
25°C
1.8%
Gain-bandwidth product f = 10 kHz,
CL = 100 pF‡RL = 10 kΩ‡,25°C 46 kHz
BOM Maximum output-swing bandwidth VO(PP) = 1 V,
RL = 10 kه,AV = 1,
CL = 100 pF‡25°C 8.3 kHz
AV
=–
1,
To 0 1%
86
t
Settling time
AV
=
1
,
Step = 0.5 V to 2.5 V,
To
0
.
1%
25°C
8
.
6
µs
t
s
Settling
time
,
RL = 10 kه,
‡
To 0 01%
25°C
16
µ
s
L
CL = 100 pF‡
To
0
.
01%
16
φmPhase margin at unity gain
RL=10kه
CL= 100
p
F‡
25°C62°
Gain margin
R
L =
10
kه
,
C
L =
100
pF‡
25°C11 dB
†Full range for the C version is 0°C to 70°C. Full range for the I version is –40°C to 85°C.
‡Referenced to 2.5 V
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
8POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS T
A†
TLV2422Q,
TLV2422M TLV2422AQ,
TLV2422AM UNIT
A
MIN TYP MAX MIN TYP MAX
VIO
In
p
ut offset voltage
25°C 300 2000 300 950
µV
V
IO
Input
offset
voltage
Full range 2500 1800 µ
V
αVIO
Temperature
coefficient of in
p
ut
Full range
2
2
µV/°C
αVIO coe
ffi
c
i
en
t
o
f
i
npu
t
offset voltage
Full
range
2
2
µ
V/°C
Input offset voltage
long-term drift (see
Note 4)
VIC = 0,
VO = 0, VDD± = ±1.5 V,
RS = 50 Ω25°C0.003 0.003 µV/mo
IIO
In
p
ut offset current
25°C 0.5 60 0.5 60 p
A
I
IO
Input
offset
current
Full range 150 150
pA
IIB
In
p
ut bias current
25°C 1 60 1 60 p
A
I
IB
Input
bias
current
Full range 300 300
pA
VICR
Common-mode input
|VIO|≤5mV
RS=50Ω
25°C0
to
2.5
–0.25
to
2.75
0
to
2.5
–0.25
to
2.75
V
V
ICR voltage range
|V
IO
|
≤
5
mV
,
R
S =
50
Ω
Full range 0
to
2.2
0
to
2.2
V
Hi h l l t t
IOH = –100 µA 25°C 2.97 2.97
VOH High-level output
voltage
IOH = 500 µA
25°C 2.75 2.75 V
voltage
I
OH = –
500
µ
A
Full range 2.5 2.5
Llltt
VIC = 0, IOL = 100 µA 25°C 0.05 0.05
VOL Low-level output
voltage
VIC =0
IOL = 250 µA
25°C 0.2 0.2 V
voltage
V
IC =
0
,
I
OL =
250
µ
A
Full range 0.5 0.5
Large
-
signal
V15V
R10kه
25°C 6 10 6 10
AVD
Large signal
differential voltage VIC = 1.5 V,
VO=1Vto2V
R
L =
10
kه
Full range 2 2 V/mV
VD
amplification
VO
=
1
V
to
2
V
RL = 1 MΩ‡25°C 700 700
ri(d) Differential input
resistance 25°C1012 1012 Ω
ri(c) Common-mode input
resistance 25°C1012 1012 Ω
ci(c) Common-mode input
capacitance f = 10 kHz 25°C 8 8 pF
zoClosed-loop output
impedance f = 100 kHz, AV = 10 25°C 130 130 Ω
CMRR
Common-mode V
IC
= V
ICR
min, V
O
= 1.5 V, 25°C 70 83 70 83
dB
CMRR
rejection ratio
IC ICR ,O,
RS = 50 ΩFull range 70 70
dB
kSVR
Supply-voltage
rejection ratio
V
DD
= 2.7 V to 8 V, 25°C 80 95 80 95
dB
k
SVR re
j
ec
ti
on ra
ti
o
(∆VDD/∆VIO)
DD ,
VIC = VDD/2, No load Full range 80 80
dB
IDD
Su
pp
ly current
VO=15V
No load
25°C 100 150 100 150
µA
I
DD
Supply
current
V
O =
1
.
5
V
,
No
load
Full range 175 175 µ
A
†Full range is –40°C to 125°C for Q level part, –55°C to 125°C for M level part.
‡Referenced to 1.5 V
NOTE 4: Typical values are based on the input of fset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 3 V
PARAMETER TEST CONDITIONS TA
†
TLV2422Q,
TLV2422M,
TLV2422AQ,
TLV2422AM UNIT
MIN TYP MAX
V 11Vt 19V
R10kه
25°C 0.01 0.02
SR Slew rate at unity gain
V
O =
1
.
1
V
t
o
1
.
9
V
,
CL = 100 pF‡
R
L =
10
kه
,Full
range 0.008 V/µs
V
Equivalent in
p
ut noise voltage
f = 10 Hz 25°C 100
nV/√Hz
V
n
Equivalent
input
noise
voltage
f = 1 kHz 25°C 23 n
V/√H
z
VN(PP)
Peak to
p
eak equivalent in
p
ut noise voltage
f = 0.1 Hz to 1 Hz 25°C 2.7
µV
V
N(PP)
Peak
-
to
-
peak
equivalent
input
noise
voltage
f = 0.1 Hz to 10 Hz 25°C 4 µ
V
InEquivalent input noise current 25°C 0.6 fA√Hz
THD+N
Total harmonic distortion
p
lus noise
VO = 0.5 V to 2.5 V,
f 1 kHz
AV = 1
25°C
0.25%
THD
+
N
Total
harmonic
distortion
plus
noise
f
=
1
kH
z,
RL = 10 kهAV = 10
25°C
1.8%
Gain-bandwidth product f = 10 kHz,
CL = 100 pF‡RL = 10 kΩ‡,25°C 46 kHz
BOM Maximum output-swing bandwidth VO(PP) = 1 V,
RL = 10 kه,AV = 1,
CL = 100 pF‡25°C 8.3 kHz
AV
=–
1,
To 0 1%
86
t
Settling time
AV
=
1
,
Step = 0.5 V to 2.5 V,
To
0
.
1%
25°C
8
.
6
µs
t
s
Settling
time
,
RL = 10 kه,
‡
To 0 01%
25°C
16
µ
s
L
CL = 100 pF‡
To
0
.
01%
16
φmPhase margin at unity gain
RL=10kه
CL= 100
p
F‡
25°C62°
Gain margin
R
L =
10
kه
,
C
L =
100
pF‡
25°C11 dB
†Full range is –40°C to 125°C for Q level part, –55°C to 125°C for M level part.
‡Referenced to 1.5 V
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
T†
TLV2422C
UNIT
PARAMETER
TEST
CONDITIONS
T
A
†
MIN TYP MAX
UNIT
VIO
In
p
ut offset voltage
25°C 300 2000
µV
V
IO
Input
offset
voltage
Full range 2500 µ
V
αVIO
Tem
p
erature coefficient of in
p
ut offset voltage
25°C
2
µV/°C
αVIO
Temperature
coefficient
of
input
offset
voltage
to 70°C
2
µ
V/°C
Input offset voltage long-term drift (see Note 4) VIC = 0,
VO=0
VDD± = ±2.5 V,
RS=50Ω
25°C 0.003 µV/mo
IIO
In
p
ut offset current
VO
=
0
,
RS
=
50
Ω
25°C 0.5 60 p
A
I
IO
Input
offset
current
Full range 150
pA
IIB
In
p
ut bias current
25°C 1 60 p
A
I
IB
Input
bias
current
Full range 150
pA
VICR
Common mode in
p
ut voltage range
|VIO|≤5mV
RS=50Ω
25°C0
to
4.5
–0.25
to
4.75
V
V
ICR
Common
-
mode
input
voltage
range
|V
IO
|
≤
5
mV
,
R
S =
50
Ω
Full range 0
to
4.2
V
IOH = –100 µA 25°C 4.97
VOH High-level output voltage
IOH =1mA
25°C 4.5 4.75 V
I
OH = –
1
mA
Full range 4.25
VIC = 2.5 V, IOL = 100 µA 25°C 0.04
VOL Low-level output voltage
VIC =25V
IOL = 500 µA
25°C 0.15 V
V
IC =
2
.
5
V
,
I
OL =
500
µ
A
Full range 0.5
V25V
R10kه
25°C 8 12
AVD Large-signal differential voltage amplification VIC = 2.5 V,
VO=1Vto4V
R
L =
10
kه
Full range 5V/mV
VD
gg g
VO
=
1
V
to
4
V
RL = 1 MΩ‡25°C 1000
ri(d) Differential input resistance 25°C1012 Ω
ri(c) Common-mode input resistance 25°C1012 Ω
ci(c) Common-mode input capacitance f = 10 kHz 25°C 8 pF
zoClosed-loop output impedance f = 100 kHz, AV = 10 25°C 130 Ω
CMRR
Common mode rejection ratio
V
IC
= 0 to 4.5 V, V
O
= 2.5 V, 25°C 70 90
dB
CMRR
Common
-
mode
rejection
ratio
IC ,O,
RS = 50 ΩFull range 70
dB
kSVR
Su
pp
ly voltage rejection ratio (∆VDD/∆VIO)
V
DD
= 4.4 V to 8 V, 25°C 80 95
dB
k
SVR
Supply
-
voltage
rejection
ratio
(∆V
DD
/∆V
IO
)
DD ,
VIC = VDD/2, No load Full range 80
dB
IDD
Su
pp
ly current
VO=25V
No load
25°C 100 150
µA
I
DD
Supply
current
V
O =
2
.
5
V
,
No
load
Full range 175 µ
A
†Full range is 0°C to 70°C.
‡Referenced to 2.5 V
NOTE 4: Typical values are based on the input of fset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
T†
TLV2422I TLV2422AI
UNIT
PARAMETER
TEST
CONDITIONS
T
A
†
MIN TYP MAX MIN TYP MAX
UNIT
VIO
In
p
ut offset voltage
25°C 300 2000 300 950
µV
V
IO
Input
offset
voltage
Full range 2500 1500 µ
V
αVIO
Temperature
coefficient of in
p
ut
25°C
2
2
µV/°C
αVIO coe
ffi
c
i
en
t
o
f
i
npu
t
offset voltage to 70°C
2
2
µ
V/°C
Input offset voltage
long-term drift (see
Note 4)
VIC = 0,
VO = 0, VDD± = ±2.5 V,
RS = 50 Ω25°C0.003 0.003 µV/mo
IIO
In
p
ut offset current
25°C 0.5 60 0.5 60 p
A
I
IO
Input
offset
current
Full range 150 150
pA
IIB
In
p
ut bias current
25°C 1 60 1 60 p
A
I
IB
Input
bias
current
Full range 150 150
pA
VICR
Common-mode input
|VIO|≤5mV
RS=50Ω
25°C0
to
4.5
–0.25
to
4.75
0
to
4.5
–0.25
to
4.75
V
V
ICR voltage range
|V
IO
|
≤
5
mV
,
R
S =
50
Ω
Full range 0
to
4.2
0
to
4.2
V
Hi h l l t t
IOH = –100 µA 25°C 4.97 4.97
VOH High-level output
voltage
IOH =1mA
25°C 4.5 4.75 4.5 4.75 V
voltage
I
OH = –
1
mA
Full range 4.25 4.25
Llltt
VIC = 2.5 V, IOL = 100 µA 25°C 0.04 0.04
VOL Low-level output
voltage
VIC =25V
IOL = 500 µA
25°C 0.15 0.15 V
voltage
V
IC =
2
.
5
V
,
I
OL =
500
µ
A
Full range 0.5 0.5
Large
-
signal
V25V
R10kه
25°C 8 12 8 12
AVD
Large signal
differential voltage VIC = 2.5 V,
VO=1Vto4V
R
L =
10
kه
Full range 5 5 V/mV
VD
amplification
VO
=
1
V
to
4
V
RL = 1 MΩ‡25°C 1000 1000
ri(d) Differential input
resistance 25°C1012 1012 Ω
ri(c) Common-mode input
resistance 25°C1012 1012 Ω
ci(c) Common-mode input
capacitance f = 10 kHz 25°C 8 8 pF
zoClosed-loop output
impedance f = 100 kHz, AV = 10 25°C 130 130 Ω
CMRR
Common-mode V
IC
= 0 to 4.5 V, V
O
= 2.5 V, 25°C 70 90 70 90
dB
CMRR
rejection ratio
IC ,O,
RS = 50 ΩFull range 70 70
dB
kSVR
Supply-voltage
rejection ratio
V
DD
= 4.4 V to 8 V, 25°C 80 95 80 95
dB
k
SVR re
j
ec
ti
on ra
ti
o
(∆VDD/∆VIO)
DD ,
VIC = VDD/2, No load Full range 80 80
dB
IDD
Su
pp
ly current
VO=25V
No load
25°C 100 150 100 150
µA
I
DD
Supply
current
V
O =
2
.
5
V
,
No
load
Full range 175 175 µ
A
†Full range is – 40°C to 85°C.
‡Referenced to 2.5 V
NOTE 4: Typical values are based on the input of fset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS T
A†
TLV2422C, TL V2422I
TLV2422AI UNIT
A
MIN TYP MAX
VO15Vto35V
RL10 kه
25°C 0.01 0.02
SR Slew rate at unity gain
V
O =
1
.
5
V
t
o
3
.
5
V
,
CL
=
100
p
F‡
R
L =
10
kه
,Full
0 008
V/µs
CL
=
100
F‡
range
0
.
008
V
Equivalent in
p
ut noise voltage
f = 10 Hz 25°C 100
V
n
Equivalent
input
noise
voltage
f = 1 kHz 25°C 18 n
z
VN(PP)
Peak to
p
eak equivalent in
p
ut noise voltage
f = 0.1 Hz to 1 Hz 25°C 1.9
V
N(PP)
Peak
-
to
-
peak
equivalent
input
noise
voltage
f = 0.1 Hz to 10 Hz 25°C 2.8 µ
InEquivalent input noise current 25°C 0.6 fA√Hz
THD+N
Total harmonic distortion
p
lus noise
VO = 1.5 V to 3.5 V,
f 1 kHz
AV = 1
25°C
0.24%
THD
+
N
Total
harmonic
distortion
plus
noise
f
=
1
kH
z,
RL = 10 kهAV = 10
25°C
1.7%
Gain-bandwidth product f = 10 kHz,
CL = 100 pF‡RL =10 kΩ‡,25°C 52 kHz
BOM Maximum output-swing bandwidth VO(PP) = 2 V,
RL = 10 kه,AV = 1,
CL = 100 pF‡25°C 5.3 kHz
AV
=–
1,
To 0 1%
85
t
Settling time
AV
=
1
,
Step = 1.5 V to 3.5 V,
To
0
.
1%
25°C
8
.
5
t
s
Settling
time
,
RL = 10 kه,
‡
To 0 01%
25°C
15 5
µ
L
CL = 100 pF‡
To
0
.
01%
15
.
5
φmPhase margin at unity gain
RL=10kه
CL= 100
p
F‡
25°C66°
Gain margin
R
L =
10
kه
,
C
L =
100
pF‡
25°C11 dB
†Full range for the C version is 0°C to 70°C. Full range for the I version is –40°C to 85°C.
‡Referenced to 2.5 V
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS T
A†
TLV2422Q,
TLV2422M TLV2422AQ,
TLV2422AM UNIT
A
MIN TYP MAX MIN TYP MAX
VIO
In
p
ut offset voltage
25°C 300 2000 300 950
µV
V
IO
Input
offset
voltage
Full range 2500 1800 µ
V
αVIO
Temperature
coefficient of in
p
ut
Full range
2
2
µV/°C
αVIO coe
ffi
c
i
en
t
o
f
i
npu
t
offset voltage
Full
range
2
2
µ
V/°C
Input offset voltage
long-term drift (see
Note 4)
VIC = 0,
VO = 0, VDD± = ±2.5 V,
RS = 50 Ω25°C0.003 0.003 µV/mo
IIO
In
p
ut offset current
25°C 0.5 60 0.5 60 p
A
I
IO
Input
offset
current
Full range 150 150
pA
IIB
In
p
ut bias current
25°C 1 60 1 60 p
A
I
IB
Input
bias
current
Full range 300 300
pA
VICR
Common-mode input
|VIO|≤5mV
RS=50Ω
25°C0
to
4.5
–0.25
to
4.75
0
to
4.5
–0.25
to
4.75
V
V
ICR voltage range
|V
IO
|
≤
5
mV
,
R
S =
50
Ω
Full range 0
to
4.2
0
to
4.2
V
Hi h l l t t
IOH = –100 µA 25°C 4.97 4.97
VOH High-level output
voltage
IOH =1mA
25°C 4.75 4.75 V
voltage
I
OH = –
1
mA
Full range 4.5 4.5
Llltt
VIC = 2.5 V, IOL = 100 µA 25°C 0.04 0.04
VOL Low-level output
voltage
VIC =25V
IOL = 500 µA
25°C 0.15 0.15 V
voltage
V
IC =
2
.
5
V
,
I
OL =
500
µ
A
Full range 0.5 0.5
Large
-
signal
V25V
R10kه
25°C 8 12 8 12
AVD
Large signal
differential voltage VIC = 2.5 V,
VO=1Vto4V
R
L =
10
kه
Full range 3 3 V/mV
VD
amplification
VO
=
1
V
to
4
V
RL = 1 MΩ‡25°C 1000 1000
ri(d) Differential input
resistance 25°C1012 1012 Ω
ri(c) Common-mode input
resistance 25°C1012 1012 Ω
ci(c) Common-mode input
capacitance f = 10 kHz 25°C 8 8 pF
zoClosed-loop output
impedance f = 100 kHz, AV = 10 25°C 130 130 Ω
CMRR
Common-mode V
IC
= V
ICR
min, V
O
= 2.5 V, 25°C 70 90 70 90
dB
CMRR
rejection ratio
IC ICR ,O,
RS = 50 ΩFull range 70 70
dB
kSVR
Supply-voltage
rejection ratio
V
DD
= 4.4 V to 8 V, 25°C 80 95 80 95
dB
k
SVR re
j
ec
ti
on ra
ti
o
(∆VDD/∆VIO)
DD ,
VIC = VDD/2, No load Full range 80 80
dB
IDD
Su
pp
ly current
VO=25V
No load
25°C 100 150 100 150
µA
I
DD
Supply
current
V
O =
2
.
5
V
,
No
load
Full range 175 175 µ
A
†Full range is –40°C to 125°C for Q level part, –55°C to 125°C for M level part.
‡Referenced to 2.5 V
NOTE 4: Typical values are based on the input of fset voltage shift observed through 500 hours of operating life test at TA = 150°C extrapolated
to TA = 25°C using the Arrhenius equation and assuming an activation energy of 0.96 eV.
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics at specified free-air temperature, VDD = 5 V
PARAMETER TEST CONDITIONS TA
†
TLV2422Q,
TLV2422M,
TLV2422AQ,
TLV2422AM UNIT
MIN TYP MAX
VO15Vto35V
RL10 kه
25°C 0.01 0.02
SR Slew rate at unity gain
V
O =
1
.
5
V
t
o
3
.
5
V
,
CL
=
100
p
F‡
R
L =
10
kه
,Full
0 008
V/µs
CL
=
100
F‡
range
0
.
008
V
Equivalent in
p
ut noise voltage
f = 10 Hz 25°C 100
V
n
Equivalent
input
noise
voltage
f = 1 kHz 25°C 18 n
z
VN(PP)
Peak to
p
eak equivalent in
p
ut noise voltage
f = 0.1 Hz to 1 Hz 25°C 1.9
V
N(PP)
Peak
-
to
-
peak
equivalent
input
noise
voltage
f = 0.1 Hz to 10 Hz 25°C 2.8 µ
InEquivalent input noise current 25°C 0.6 fA√Hz
THD+N
Total harmonic distortion
p
lus noise
VO = 1.5 V to 3.5 V,
f 1 kHz
AV = 1
25°C
0.24%
THD
+
N
Total
harmonic
distortion
plus
noise
f
=
1
kH
z,
RL = 10 kهAV = 10
25°C
1.7%
Gain-bandwidth product f = 10 kHz,
CL = 100 pF‡RL =10 kΩ‡,25°C 52 kHz
BOM Maximum output-swing bandwidth VO(PP) = 2 V,
RL = 10 kه,AV = 1,
CL = 100 pF‡25°C 5.3 kHz
AV
=–
1,
To 0 1%
85
t
Settling time
AV
=
1
,
Step = 1.5 V to 3.5 V,
To
0
.
1%
25°C
8
.
5
t
s
Settling
time
,
RL = 10 kه,
‡
To 0 01%
25°C
15 5
µ
L
CL = 100 pF‡
To
0
.
01%
15
.
5
φmPhase margin at unity gain
RL=10kه
CL= 100
p
F‡
25°C66°
Gain margin
R
L =
10
kه
,
C
L =
100
pF‡
25°C11 dB
†Full range is –40°C to 125°C for Q level part, –55°C to 125°C for M level part.
‡Referenced to 2.5 V
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
VIO
In
p
ut offset voltage
Distribution 2,3
V
IO
Input
offset
voltage
vs Common-mode input voltage
,
4,5
αVIO Input offset voltage temperature coef ficient Distribution 6,7
IIB/IIO Input bias and input offset currents vs Free-air temperature 8
VOH High-level output voltage vs High-level output current 9,11
VOL Low-level output voltage vs Low-level output current 10,12
VO(PP) Maximum peak-to-peak output voltage vs Frequency 13
IOS
Short circuit out
p
ut current
vs Suppl
y
volta
g
e 14
I
OS
Short
-
circuit
output
current
yg
vs Free-air temperature 15
VID Differential input voltage vs Output voltage 16,17
Differential gain vs Load resistance 18
AVD
Large-signal differential voltage amplification vs Frequency 19,20
A
VD Differential voltage amplification
qy
vs Free-air temperature
,
21,22
zoOutput impedance vs Frequency 23,24
CMRR
Common mode rejection ratio
vs Frequenc
y
25
CMRR
Common
-
mode
rejection
ratio
qy
vs Free-air temperature 26
kSVR
Su
pp
ly voltage rejection ratio
vs Frequency 27,28
k
SVR
Supply
-
voltage
rejection
ratio
qy
vs Free-air temperature
,
29
IDD Supply current vs Supply voltage 30
SR
Slew rate
vs Load capacitance 31
SR
Slew
rate
vs Free-air temperature 32
VOInverting large-signal pulse response 33,34
VOVoltage-follower large-signal pulse response 35,36
VOInverting small-signal pulse response 37,38
VOVoltage-follower small-signal pulse response 39,40
VnEquivalent input noise voltage vs Frequency 41, 42
Noise voltage (referred to input) Over a 10-second period 43
THD + N Total harmonic distortion plus noise vs Frequency 44,45
Gain bandwidth
p
roduct
vs Supply volta
g
e 46
Gain
-
bandwidth
product
yg
vs Free-air temperature 47
φ
Phase margin
vs Frequenc
y
19,20
φ
m
Phase
margin
qy
vs Load capacitance
,
48
Gain margin vs Load capacitance 49
B1Unity-gain bandwidth vs Load capacitance 50
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 2
DISTRIBUTION OF TLV2422
INPUT OFFSET VOLTAGE
Percentage of Amplifiers – %
16
14
12
10
8
6
4
2
0–0.4 VIO – Input Offset Voltage – mV
452 Amplifiers from 1 W afer Lot
18
–0.3
VDD = 3 V
RL = 10 kΩ
TA = 25°C
–0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7
Figure 3
454 Amplifiers from 1 W afer Lot
DISTRIBUTION OF TLV2422
INPUT OFFSET VOLTAGE
Percentage of Amplifiers – %
20
15
10
5
0
VDD = 5 V
RL = 10 kΩ
TA = 25°C
–0.4 VIO – Input Offset Voltage – mV
–0.3 –0.2 –0.1 0 0.1 0.2 0.3 0.4 0.5 0.6
Figure 4
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
–0.5
2
1
0
–1
–20 0.5 1 2.5 3
VIC – Common-Mode Input Voltage – V
2
1.5 VDD = 3 V
VIO – Input Offset Voltage – mV
0.5
–0.5
–1.5
1.5
Figure 5
VDD = 5 V
INPUT OFFSET VOLTAGE
vs
COMMON-MODE INPUT VOLTAGE
2
1
0
–1
–2
1.5
0.5
–0.5
–1.5
–0.5 0 0.5 1 2.5 5
VIC – Common-Mode Input Voltage – V
21.5 3 4.543.5
VIO – Input Offset Voltage – mV
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 6
10
5
0–4–3–2–101
15
20
25
234
32 Amplifiers From 1 Wafer Lot
VDD = ± 1.5 V
TA = 25°C to 125°C
Percentage of Amplifiers – %
DISTRIBUTION OF TLV2422 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
αVIO – Temperature Coefficient – µV/°C
Figure 7
10
5
0–4–3–2–10 1
15
20
25
234
32 Amplifiers From 1 W afer Lot
VDD = ± 2.5 V
TA = 25°C to 125°C
Percentage of Amplifiers – %
DISTRIBUTION OF TLV2422 INPUT OFFSET
VOLTAGE TEMPERATURE COEFFICIENT
αVIO – Temperature Coefficient – µV/°C
Figure 8
INPUT BIAS AND INPUT OFFSET CURRENTS
vs
FREE-AIR TEMPERATURE
–55
200
120
80
40
0–40 0 25 85 125
TA – Free-Air Temperature – °C
70
IIB
160
IIO
VDD = ±2.5 V
IIB – Input Bias and Input Offset Currents – pAand IIO
Figure 9
VOH– High-Level Output Voltage – V
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
0
3
2
1
036 91215
IOH – High-Level Output Current – mA
TA = 85°C
VDD = 3 V
2.5
1.5
0.5
TA = 125°C
TA = 0°C
TA = 25°C
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
18 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 10
VOL– Low-Level Output Voltage – V
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0
1.6
1
0.4
012 3 4 5
IOL – Low-Level Output Current – mA
TA = 85°C
VDD = 3 V
1.2
0.8
0.2
TA = 125°C
TA = –40°C
TA = 25°C
0.6
1.4
Figure 11
HIGH-LEVEL OUTPUT VOLTAGE
vs
HIGH-LEVEL OUTPUT CURRENT
0
5
2
0816243240
IOH – High-Level Output Current – mA
4
1
3
412202836
TA = 85°C
TA = 125°C
TA = –40°C
TA = 25°C
VDD = 5 V
VOH– High-Level Output Voltage – V
Figure 12
LOW-LEVEL OUTPUT VOLTAGE
vs
LOW-LEVEL OUTPUT CURRENT
0
1
0.4
012 3 4 5
IOL – Low-Level Output Current – mA
TA = 85°C
VDD = 5 V
1.2
0.8
0.2
TA = 125°C
TA = –40°C
TA = 25°C
0.6
VOH– High-Level Output Voltage – V
Figure 13
MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE
vs
FREQUENCY
VDD = 5 V RL = 10 kΩ
TA = 25°C
4
1
5
3
0
102103104106
f – Frequency – Hz
VO(PP) – Maximum Peak-to-Peak Output Voltage – V
2
105
VDD = 3 V
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
19
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 14
IOS– Short-Circuit Output Current – mA
SHORT-CIRCUIT OUTPUT CURRENT
vs
SUPPLY VOLTAGE
2
20
–5
–20
–30 34567
VDD – Supply Voltage – V
10
–10
–25
–15
15
VO = VDD/2
VIC = VDD/2
TA = 25°C
30
0
5
25
8910
Figure 15
SHORT-CIRCUIT OUTPUT CURRENT
vs
FREE-AIR TEMPERATURE
–55
2
–4
–80 70 125
0
–6
–2
–40 25 85
VDD = 5 V
8
6
4
VID = –100 mV
VID = 100 mV
TA – Free-Air Temperature – °C
IOS– Short-Circuit Output Current – mA
Figure 16
VID – Differential Input Voltage –
DIFFERENTIAL INPUT VOLTAGE
vs
OUTPUT VOLTAGE
0
0
–600
–1000 123
–200
–800
–400
0.5 1.5 2.5
600
400
200
VO – Output Voltage – V
1000
800
µV
VDD = 3 V
RL = 10 kΩ
TA = 25°C
Figure 17
012345
VDD = 5 V
RL = 10 kΩ
TA = 25°C
VID – Differential Input Voltage –
0
–600
–1000
–200
–800
–400
600
400
200
1000
800
µV
VO – Output Voltage – V
DIFFERENTIAL INPUT VOLTAGE
vs
OUTPUT VOLTAGE
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
20 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Differential Gain – V/mV
DIFFERENTIAL GAIN
vs
LOAD RESISTANCE
10
10
11000
100
100
10000
1000
VID = 5 V
RL – Load Resistance – kΩ
VID = 3 V
Figure 18
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
50
30
10
–50
f – Frequency – Hz
40
20
0
AVD– Large-Signal Differential
104105
V oltage Amplification – dB
–45
–90
m
φ– Phase Margin –°
VDD = 3 V
RL = 10 kΩ
CL = 100 pF
106
–10
–30
–20
–40
103
180
45
0
90
135
GAIN
PHASE
Figure 19
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
21
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
LARGE-SIGNAL DIFFERENTIAL VOLTAGE
AMPLIFICATION AND PHASE MARGIN
vs
FREQUENCY
60
40
20
–40
f – Frequency – Hz
50
30
10
AVD– Large-Signal Differential
103104
V oltage Amplification – dB
m
φ– Phase Margin –°
105
0
–20
–10
–30
106
–45
–90
180
45
0
90
135
GAIN
PHASE
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
Figure 20
Figure 21
TA – Free-Air Temperature – °C
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
–75
10
1
100
–50
10000
1000
VDD = 3 V
RL = 10 kΩ
–25 0 25 50 75 100 125
AVD– Differential Voltage Amplication – V/mV
RL = 1 MΩ
Figure 22
TA – Free-Air Temperature – °C
DIFFERENTIAL VOLTAGE AMPLIFICATION
vs
FREE-AIR TEMPERATURE
–75
10
1
100
–50
10000
1000
VDD = 5 V
RL = 10 kΩ
–25 0 25 50 75 100 125
AVD– Differential Voltage Amplication – V/mV
RL = 1 MΩ
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
22 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 23
OUTPUT IMPEDANCE
vs
FREQUENCY
1000
100
10
1
f – Frequency – Hz
102103105
VDD = 3 V
TA = 25°C
104
AV = 10
AV = 1
AV = 100
zo– Output Impedance –Ω
Figure 24
OUTPUT IMPEDANCE
vs
FREQUENCY
1000
100
10
1
f – Frequency – Hz
102103105
VDD = 5 V
TA = 25°C
104
AV = 10
AV = 1
AV = 100
zo– Output Impedance –Ω
Figure 25
80
40
0
f – Frequency – Hz
100
60
20
CMRR – Common-Mode Rejection Ratio – dB
102103106
TA = 25°C
104105
VDD = 3 V
VDD = 5 V
COMMON-MODE REJECTION RATIO
vs
FREQUENCY
Figure 26
CMRR – Common-Mode Rejection Ratio – dB
COMMON-MODE REJECTION RATIO
vs
FREE-AIR TEMPERATURE
–55
91
90
88
86
84 –40 25 70 85 125
TA – Free-Air Temperature – °C
89
87
85
0
94
93
92
VDD = 3 V
VDD = 5 V
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
23
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 27
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREQUENCY
80
40
0
f – Frequency – Hz
120
60
20
101103106
104105
K
100
102
VDD = 3 V
TA = 25°C
– Supply-Voltage Rejection Ratio – dB
SVR
KSVR+
KSVR–
Figure 28
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREQUENCY
80
40
0
f – Frequency – Hz
120
60
20
101103106
104105
K
100
102
VDD = 5 V
TA = 25°C
– Supply-Voltage Rejection Ratio – dB
SVR
KSVR+
KSVR–
Figure 29
SUPPLY-VOLTAGE REJECTION RATIO
vs
FREE-AIR TEMPERATURE
–55
94
92
90 –40 25 70 85 125
TA – Free-Air Temperature – °C
0
100
98
96
VDD = 2.7 V to 8 V
k– Supply-Voltage Rejection Ratio – dB
SVR
Figure 30
IDD– Supply Current –
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
0
100
40
0246
80
20
60
135
160
140
120
VDD – Supply Voltage – V
VO = VDD/2
No Load
79810
TA = 25°C
TA = 85°C
TA = –40°C
µA
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
24 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 31
SLEW RATE
vs
LOAD CAPACITANCE
0.02
0.01
0
CL – Load Capacitance – pF
0.03
0.015
0.005
102103106
VDD = 3 V
AV = –1
TA = 25°C
104105
SR+
SR–
0.025
SR – Slew Rate – V/µs
Figure 32
SLEW RATE
vs
FREE-AIR TEMPERATURE
–55
15
10
5–40 25 70 85 125
TA – Free-Air Temperature – °C
0
30
25
20
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
AV = 1
SR – Slew Rate – V/ms
Figure 33
INVERTING LARGE-SIGNAL
PULSE RESPONSE
–1000 –600 –200
t – Time – µs
200 600 10000
– Output Voltage – mVVO
VDD = 3 V
RL = 10 kΩ
CL = 100 pF
AV = –1
TA = 25°C
2000
1500
500
–500
–2000
1000
0
–1000
–1500
Figure 34
4
3
1
–1
–4
2
0
–2
–3
INVERTING LARGE-SIGNAL
PULSE RESPONSE
–1000 –600 –200
t – Time – µs
200 600 10000
– Output Voltage – mVVO
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
AV = –1
TA = 25°C
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
25
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 35
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
–1000
2000
1500
500
–500
–2000 –600 –200
t – Time – µs
1000
0
–1000
200 600 10000
–1500
– Output Voltage – mVVO
VDD = 3 V
RL = 10 kΩ
CL = 100 pF
AV = 1
TA = 25°C
Figure 36
VOLTAGE-FOLLOWER LARGE-SIGNAL
PULSE RESPONSE
–1000
2000
1500
500
–500
–2000 –600 –200
t – Time – µs
1000
0
–1000
200 600 10000
–1500
– Output Voltage – mVVO
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
AV = 1
TA = 25°C
Figure 37
INVERTING SMALL-SIGNAL
PULSE RESPONSE
–5
400
300
100
–100
–400 –3–1
t – Time – µs
200
0
–200
1350
–300
– Output Voltage – mVVO
VDD = 3 V
RL = 10 kΩ
CL = 100 pF
AV = –1
TA = 25°C
24
–4–2
Figure 38
INVERTING SMALL-SIGNAL
PULSE RESPONSE
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
AV = –1
TA = 25°C
400
300
100
–100
–400
200
0
–200
–300
– Output Voltage – mVVO
–5–3–1
t – Time – µs
13502 4
–4–2
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
26 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 39
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
–5
400
300
100
–100
–400 –2–1
t – Time – µs
200
0
–200
0
–300
– Output Voltage – mVVO
VDD = 3 V
RL = 10 kΩ
CL = 100 pF
AV = 1
TA = 25°C
–4–33412 5
Figure 40
VOLTAGE-FOLLOWER SMALL-SIGNAL
PULSE RESPONSE
–5
400
300
100
–100
–400 –2–1
t – Time – µs
200
0
–200
0
–300
– Output Voltage – mVVO
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
AV = 1
TA = 25°C
–4–33412 5
Figure 41
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
120
80
40
0
f – Frequency – Hz
10 102104
VDD = 3 V
TA = 25°C
103
60
20
Hz– Equivalent Input Noise Voltage – nV/Vn
100
Figure 42
EQUIVALENT INPUT NOISE VOLTAGE
vs
FREQUENCY
f – Frequency – Hz
10 102104
VDD = 5 V
TA = 25°C
103
Hz– Equivalent Input Noise Voltage – nV/Vn
120
80
40
0
60
20
100
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
27
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0246810
t – Time – s
VDD = 5 V
f = 0.1 Hz to 10 Hz
TA = 25°C
400
200
–200
–600
–1200
0
–400
–800
–1000
Noise Voltage – nV
Over a 10 Second Period
800
600
1000
13579
NOISE VOLTAGE OVER A 10-SECOND PERIOD
Figure 43
Figure 44
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
1
0.01
f – Frequency – Hz
100
10
0.1
101102105
VDD = 3 V
RL = 10 kΩ
TA = 25°C
103104
THD +N – Total Harmonic Distortion Plus Noise – %
AV = 10
AV = 1
Figure 45
TOTAL HARMONIC DISTORTION PLUS NOISE
vs
FREQUENCY
10
0.1
0.001
f – Frequency – Hz
100
1
0.01
101102105
VDD = 5 V
RL = 10 kΩ
TA = 25°C
103104
THD +N – Total Harmonic Distortion Plus Noise – %
AV = 10
AV = 1
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
28 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 46
GAIN-BANDWIDTH PRODUCT
vs
SUPPLY VOLTAGE
3
80
60
40
20 4 678
VDD – Supply Voltage – V
70
50
30
Gain-Bandwidth Product – kHz
RL = 10 kΩ
CL = 100 pF
f = 10 kHz
TA = 25°C
5
Figure 47
GAIN-BANDWIDTH PRODUCT
vs
FREE-AIR TEMPERATURE
–50
80
60
40
20
0–25 25 50 75 125
TA – Free-Air Temperature – °C
50
30
10
Gain-Bandwidth Product – kHz
VDD = 5 V
RL = 10 kΩ
CL = 100 pF
f = 10 kHz
0 100
70
Figure 48
PHASE MARGIN
vs
LOAD CAPACITANCE
80
40
0
CL – Load Capacitance – pF
120
60
20
10 102105
103104
100
m
φ– Phase Margin –°
Rnull = 1000
Rnull = 100
Rnull = 0
RL = 10 kΩ
TA = 25°CRnull = 500
Rnull = 200
Figure 49
GAIN MARGIN
vs
LOAD CAPACITANCE
40
20
0
CL – Load Capacitance – pF
30
10
10 102105
103104
Gain Margin – dB
Rnull = 1000
Rnull = 100
Rnull = 0
RL = 10 kΩ
TA = 25°CRnull = 500
Rnull = 200
TLV2422, TLV2422A
Advanced LinCMOS RAIL-TO-RAIL OUTPUT
WIDE-INPUT-VOLTAGE MICROPOWER DUAL OPERATIONAL AMPLIFIERS
SLOS199C – SEPTEMBER1997 – REVISED APRIL 2001
29
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
UNITY-GAIN BANDWIDTH
vs
LOAD CAPACITANCE
40
20
0
CL – Load Capacitance – pF
60
30
10
10 102105
103104
50
B1 – Unity-Gain Bandwidth – kHz
Figure 50
PACKAGE OPTION ADDENDUM
www.ti.com 17-Aug-2012
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
5962-9751401QHA ACTIVE CFP U 10 1 TBD Call TI Call TI
5962-9751402QHA ACTIVE CFP U 10 1 TBD Call TI Call TI
TLV2422AID ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422AIDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422AIDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422AIDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422AIPWLE OBSOLETE TSSOP PW 8 TBD Call TI Call TI
TLV2422AIPWR ACTIVE TSSOP PW 8 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422AIPWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422AMUB ACTIVE CFP U 10 1 TBD A42 N / A for Pkg Type
TLV2422AQD ACTIVE SOIC D 8 TBD Call TI Call TI
TLV2422AQDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422AQDR ACTIVE SOIC D 8 TBD Call TI Call TI
TLV2422AQDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422CD ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422CDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422CDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422CPWR ACTIVE TSSOP PW 8 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
PACKAGE OPTION ADDENDUM
www.ti.com 17-Aug-2012
Addendum-Page 2
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TLV2422CPWRG4 ACTIVE TSSOP PW 8 2000 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422ID ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422IDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422IDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422IDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422IPW OBSOLETE TSSOP PW 8 TBD Call TI Call TI
TLV2422IPWR OBSOLETE TSSOP PW 8 TBD Call TI Call TI
TLV2422MUB ACTIVE CFP U 10 1 TBD A42 N / A for Pkg Type
TLV2422QD ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422QDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422QDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLV2422QDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
PACKAGE OPTION ADDENDUM
www.ti.com 17-Aug-2012
Addendum-Page 3
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
OTHER QUALIFIED VERSIONS OF TLV2422, TLV2422A, TLV2422AM, TLV2422M :
•Catalog: TLV2422A, TLV2422
•Automotive: TLV2422-Q1, TLV2422A-Q1, TLV2422A-Q1, TLV2422-Q1
•Military: TLV2422M, TLV2422AM
NOTE: Qualified Version Definitions:
•Catalog - TI's standard catalog product
•Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
•Military - QML certified for Military and Defense Applications
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TLV2422AIDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
TLV2422AIPWR TSSOP PW 8 2000 330.0 12.4 7.0 3.6 1.6 8.0 12.0 Q1
TLV2422CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
TLV2422CPWR TSSOP PW 8 2000 330.0 12.4 7.0 3.6 1.6 8.0 12.0 Q1
TLV2422IDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TLV2422AIDR SOIC D 8 2500 340.5 338.1 20.6
TLV2422AIPWR TSSOP PW 8 2000 367.0 367.0 35.0
TLV2422CDR SOIC D 8 2500 340.5 338.1 20.6
TLV2422CPWR TSSOP PW 8 2000 367.0 367.0 35.0
TLV2422IDR SOIC D 8 2500 340.5 338.1 20.6
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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