© 2009 IXYS CORPORATION, All Rights Reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C -100 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ-100 V
VGSS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C -108 A
IDM TC= 25°C, Pulse Width Limited by TJM - 510 A
IATC= 25°C -170 A
EAS TC= 25°C 3.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns
PDTC= 25°C 312 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
VISOL 50/60 Hz, RMS t = 1 minute 2500 V~
IISOL ≤ 1mA t = 1 second 3000 V~
TL1.6mm (0.062 in.) from Case for 10s 300 °C
TSOLD Plastic Body for 10s 260 °C
MdMounting Force 20..120 / 4.5..27 N/lb.
Weight 6 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = - 250µA -100 V
VGS(th) VDS = VGS, ID = -1mA - 2.0 - 4.0 V
IGSS VGS = ±20V, VDS = 0V ±100 nA
IDSS VDS = VDSS, VGS= 0V - 50 µA
TJ = 125°C - 250 µA
RDS(on) VGS = -10V, ID = - 85A, Note 1 13 mΩ
PolarPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTR170P10P VDSS = -100V
ID25 = -108A
RDS(on) ≤≤
≤≤
≤ 13mΩΩ
ΩΩ
Ω
G = Gate D = Drain
S = Source
Isolated Tab
ISOPLUS247
E153432
DS99976A(03/09)
Features
zSilicon Chip on Direct-Copper Bond
(DCB) Substrate
- UL Recognized Package
- Isolated Mounting Surface
- 2500V Electrical Isolation
zDynamic dv/dt Rating
zHigh Current Handling Capability
zAvalanche Rated
zFast Intrinsic Diode
zThe Rugged PolarPTM Process
zLow QG
zLow Drain-to-Tab Capacitance
zLow Package Inductance
Advantages
zEasy to Mount
zSpace Savings
zHigh Power Density
Applications
zHigh-Side Switches
zPush Pull Amplifiers
zDC Choppers
zAutomatic Test Equipment
zCurrent Regulators
IXTR170P10P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
gfs VDS = -10V, ID = - 85A, Note 1 35 58 S
Ciss 12.6 nF
Coss VGS = 0V, VDS = - 25V, f = 1MHz 4190 pF
Crss 930 pF
td(on) 32 ns
tr 75 ns
td(off) 82 ns
tf 45 ns
Qg(on) 240 nC
Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = - 85A 45 nC
Qgd 120 nC
RthJC 0.40 °C/W
RthCS 0.15 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.
ISVGS = 0V -170 A
ISM Repetitive, Pulse Width Limited by TJM - 680 A
VSD IF = - 85A, VGS = 0V, Note 1 - 3.3 V
trr 176 ns
QRM 1.25 µC
IRM -14.2 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse Test, t ≤ 300µs; Duty Cycle, d ≤ 2%.
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = - 85A
RG = 1Ω (External)
ISOPLUS247 (IXTR) Outline
IF = - 85A, -di/dt = -100A/µs
VR = - 50V, VGS = 0V
© 2009 IXYS CORPORATION, All Rights Reserved
IXTR170P10P
Fi g . 1. Ou tp u t C h ar acter isti c s
@ 25ºC
-180
-160
-140
-120
-100
-80
-60
-40
-20
0-2.4-2.0-1.6-1.2-0.8-0.40.0
V
DS
- Volts
I
D
- A mpe res
V
GS
= -15V
-10V
- 9V
- 5
V
- 6
V
- 8
V
- 7
V
Fi g . 2. Exten d ed Ou tp u t C h ar acteri sti cs
@ 25º C
-300
-270
-240
-210
-180
-150
-120
-90
-60
-30
0-11-10-9-8-7-6-5-4-3-2-10
V
DS
- Vo lts
I
D
- A mpe res
V
GS
= - 15V
-10V
- 8
V
- 6
V
- 7
V
- 9
V
- 5
V
Fig. 3. Output Characteristics
@ 125ºC
-180
-160
-140
-120
-100
-80
-60
-40
-20
0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0
V
DS
- Volts
I
D
- Am peres
V
GS
= -15V
-10V
- 9V
- 6
V
- 5
V
- 7
V
- 8
V
Fig. 4. R
DS(on)
Normalized to I
D
= - 85A vs.
Junction T emperature
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- N orma lize d
V
GS
= - 10V
I
D
= -170
A
I
D
= - 85
A
Fig. 5. R
DS(on)
Normalized to I
D
= - 85A vs.
Drain Current
0.8
1.0
1.2
1.4
1.6
1.8
2.0
-280-240-200-160-120-80-400
I
D
- Amp eres
R
DS(on)
- N orma lize d
V
GS
= - 10V
-15V
- - - -
T
J
= 25ºC
T
J
= 125ºC
Fig. 6. Maximum Drain Current vs.
Case Temp er atu re
-120
-110
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0-50 -25 0 25 50 75 100 125 150
T
J
- Deg ree s Cent i grade
I
D
- Am peres
IXTR170P10P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fi g . 7. In p u t Admi ttan ce
-160
-140
-120
-100
-80
-60
-40
-20
0-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0
V
GS
- Volts
I
D
- Am peres
T
J
= - 40ºC
25ºC
125ºC
Fig . 8. Tr a n scon du ct ance
0
10
20
30
40
50
60
70
80
90
100
-160-140-120-100-80-60-40-200
I
D
- Amp eres
g
f s
- S ie m e n s
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intr i n si c D io d e
-300
-270
-240
-210
-180
-150
-120
-90
-60
-30
0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5
V
SD
- Volts
I
S
- A mpe re s
T
J
= 125ºC T
J
= 25ºC
Fig. 10. Gate Charge
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
00 20 40 60 80 100 120 140 160 180 200 220 240
Q
G
- Nan oCoulom bs
V
GS
- V o lts
V
DS
= - 50V
I
D
= - 85A
I
G
= -1mA
Fig. 11. Capacitance
100
1,000
10,000
100,000
-40-35-30-25-20-15-10-50
V
DS
- Vo lts
Capacitance - PicoFarads
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
1
10
100
1,000
110100
VDS - Volts
ID - Am peres
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
25µs
1ms 100µs
R
DS(on)
Limit 10ms
DC
-
--- -
100ms
-
-
IXYS REF: T_170P10P(B9)3-25-09-C
© 2009 IXYS CORPORATION, All Rights Reserved IXYS REF: T_170P10P(B9)3-25-09-C
Fi g. 13. Maximum Tr an si en t Th er mal I mpedan ce
0.001
0.010
0.100
1.000
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
IXTR170P10P
