Parameter Symbol Condition Ratings
Optical Output Power Pf50CW mW
Laser Forward Current IF250CW mA
Photodiode Reverse Voltage VDR 20 V-
Photodiode Forward Current IPF 10 mA-
Cooler Voltage Vc5.0 VNote (1)
Lead Soldering Time Tsold 10 sec<260°C
Laser Reverse Voltage VR2-V
Unit
ABSOLUTE MAXIMUM RATINGS (Tc=25°C)
-
Cooler Current Ic2.0 A
-
Storage Temperature Tstg -40 to +85 °C
-
Operating Case Temperature Top 0 to +70 °C
FEATURES:
• Wavelength Locker, Integrated CW light source
• Tunable Range : 2.4nm or more with 2 channel ITU-T grid
selectable (with 100GHz spacing)
• Wavelengths available to ITU-T standard 100GHz spacing
52 (=13 x 4) channels (C-band : 1528.77 - 1569.59nm)
• Operating Temperature range : 0 - 70°C
• Fiber output power : 13dBm typical
• LD driving current : 80mA typical, less than 200mA
• Built-in optical isolator
• Polarization preserving (PANDA) fiber
• Monitor current : more than 35µA (for APC) greater than 25µA
(for wavelength monitor)
• Wavelength stability : less than +/-40pm drift during 20years operation
and case temperature change (0 - 70°C)
• Comes in standard 14-pin butterfly package
APPLICATIONS:
Long haul DWDM applications at all bit rates
Metropolitan DWDM applications at 10 Gbs
DESCRIPTION:
The Fujitsu Tunable LD module with Wavelength Locker (FLD5F6CA-C) is a high power CW
laser (13dBm) with polarization maintaining fiber that is intended for use with an external mod-
ulator. The laser can be wavelength tuned across a 2.4nm range (4 ITU-T 100Ghz spaced
channels) via adjustment of the chip temperature with the included TEC. The tuned wave-
length can then be locked onto the desired ITU-T grid channel via use of the included fabry-
perot etalon. This laser is available at any of the 52 ITU-T wavelengths in the C band
(1528.77-1569.59nm). The device comes in a standard 14 pin butterfly package, operates
between 0-70°C, and requires 80mA of drive current (typical).
1
Edition 1.0
February 2001
Tunable LD Module with
Wavelength Locker FLD5F6CA-C
2
Tunable LD Module with
Wavelength Locker
FLD5F6CA-C
Parameter Symbol
Laser Set Temperature Tset
Relative Intensity Noise RIN
Conditions
-
CW, Pf=20mW,
ORL>40dB, f=DC-7.5GHz
TL=Tset, Tc=+70°C,
Pf=20mW
TL=Tset, Tc=+70°C,
Pf=20mW
Tc, TL=+25°C
Tc, TL=+25°C
Unit
°C
Min.
11
Limits
dB/Hz-140-
Peak Wavelength λpNote (3) nm
+35-
Optical Output Power PfCW, Tc=-20 to +65°CmW
-20 -
Slope Efficiency ηCW, Pf=10mW,
ORL>40dB
CH. 1-CH.2,
ORL>40dB
CW, Pf=20mW,
ORL>40dB
CW, Pf=20mW,
ORL>40dB
mW/mA
Tracking Error (Note 2) TE
Im=constant,
Pf(Tc=25°C)=20mW,
Tc=0 to +70°C
dB+1.0-0.5 -
Monitor Current Im
Monitor Dark Current
Monitor Capacitance
Idm
Ct
Pf=20mW
VPD=5V
VPD=5V, f=1 MHz
mA
nA
pF
.35
100
10
0.035
-
-
-
-
-
Wavelength Stability with
Case Temperature -
Im1=constant,
Im2=constant,
Tc=0-70°C, 20 years
pm40-40 -
Side Mode Suppression Sr dB-33 -
Spectral Width (-3dB) ∆λ MHz10-3
-
Cooler Current Ic A
1.4--
Cooler Voltage Vc V4.5--
Thermistor Resistance Rth k
10.59.5 10.0
Thermistor B Constant (Note 2) BK3,6303,270 3,450
Optical Isolation ISTc=0 to +70°CdB-22 -
Extinction Ratio TE/TM CW, Pf=20mW dB-20 -
Threshold Current Ith CW mA345-
Forward Voltage VFCW, IF=30 mA, pin 3,13 V- - 2.5
- 0.2 -
Max.Typ.
Note 1. TE=10*log[Pf(Tc)/Pf(25)]
Note 2. Relation between resistance and temperature (°K) is:
Rth (T) = Rth (25)*exp[B(1/T-1/298)]
Note 3. Reference Figure 5 Wavelength Table
OPTICAL AND ELECTRICAL CHARACTERISTICS AT (TL=Tset, Tc=25°C, BOL, unless otherwise specified)
Fig. 5 Wavelength Table
Part Number
FLD5F6CA-C9610 1528.773
1529.553
±0.01
±0.01
FLD5F6CA-C9470 1539.766
1540.557
±0.01
±0.01
FLD5F6CA-C9490 1538.186
1538.976
±0.01
±0.01
FLD5F6CA-C9510 1536.609
1537.397
±0.01
±0.01
FLD5F6CA-C9530 1535.036
1535.822
±0.01
±0.01
FLD5F6CA-C9550 1533.465
1534.250
±0.01
±0.01
FLD5F6CA-C9570 1531.898
1532.681
±0.01
±0.01
FLD5F6CA-C9590 1530.334
1531.116
±0.01
±0.01
FLD5F6CA-C9450 1541.349
1542.142
±0.01
±0.01
FLD5F6CA-C9430 1542.936
1543.730
±0.01
±0.01
FLD5F6CA-C9410 1544.526
1545.322
±0.01
±0.01
FLD5F6CA-C9390 1546.119
1546.917
±0.01
±0.01
FLD5F6CA-C9370 1547.715
1548.515
±0.01
±0.01
Wavelength (nm)
(TL=Tset)
(in vacuum) Tolerance (nm) Part Number
FLD5F6CA-C9350 1549.315
1550.116
±0.01
±0.01
FLD5F6CA-C9210 1560.606
1561.419
±0.01
±0.01
FLD5F6CA-C9230 1558.983
1559.794
±0.01
±0.01
FLD5F6CA-C9250 1557.363
1558.173
±0.01
±0.01
FLD5F6CA-C9270 1555.747
1556.555
±0.01
±0.01
FLD5F6CA-C9290 1554.134
1554.940
±0.01
±0.01
FLD5F6CA-C9310 1552.524
1553.329
±0.01
±0.01
FLD5F6CA-C9330 1550.918
1551.721
±0.01
±0.01
FLD5F6CA-C9190 1562.223
1563.047
±0.01
±0.01
FLD5F6CA-C9170 1563.863
1564.679
±0.01
±0.01
FLD5F6CA-C9150 1565.496
1566.314
±0.01
±0.01
FLD5F6CA-C9130 1567.133
1567.952
±0.01
±0.01
FLD5F6CA-C9110 1568.773
1569.594
±0.01
±0.01
Wavelength (nm)
(TL=Tset)
(in vacuum) Tolerance (nm)
3
Tunable LD Module with
Wavelength Locker FLD5F6CA-C
Fig.4 Spectrum
Wavelength λ (nm)
Relative Intensity (dB)
0
-10
-40
-50
-60
-20
-30
10
1545 1550 1555
Fig. 2 Temperature Dependance of
Wavelength
Laser Temperature, TL (°C)
Wavelength (nm)
1550
1551
1552
1553
1554
10 20 30 40
Fig. 1 Forward Current vs Output Power
Forward Current, If (mA)
Output Power, Pf (mW)
9
6
3
0
12
06030 90
Fig. 3 Cooler Voltage -Current
Case Temperature (°C)
Cooler Voltage (V)
Cooler Current (A)
-1.0
3.0
2.0
0.0
1.0
-1.0
3.0
2.0
0.0
1.0
0203010 40 50 60
Ic
Vc
70 80
TEC
PD2
PD1
Rth
7654321
8 9 10 11 12 13 14
1500MIN.
FC-PC or FC-angled facet CONNECTOR
23±0.7
29.97±0.25
8.17±0.2
17.24±0.25
15.24±0.25
2.54±0.25
5.4±0.5 PIN 1
4-ø2.67±0.2
5.47±0.15
4.15±0.25
0.7±0.15
PIN 7
PIN 8 PIN 14
14-0.5±0.1
5.41±0.25
14-0.1±0.05
26.04±0.25
20.83±0.25
22.0±0.25
15.2±0.3
12.7±0.15
5.08±0.15
8.25±0.5
ø0.9±0.1
5.08±0.15
(ø10)
ø5.2±0.3
8.89±0.15
TOP VIEW
# PIN DESIGNATIONS
1 TEMPERATURE MONITOR
2 TEMPERATURE MONITOR
3 LASER CATHODE
4 POWER MONITOR (ANODE)
5 POWER MONITOR (CATHODE)
6 TEHP (+)
7 TEHP (-)
8 PD2(WAVE LENGTH MONITOR) CATHODE
9 PD2(WAVE LENGTH MONITOR) ANODE
10 NC
11 GROUND
12 LASER CATHODE
13 LD ANODE, GROUND
14 NC
(32)
8.25±0.5
4
“CA” PACKAGE
Tunable LD Module with
Wavelength Locker
FLD5F6CA-C
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
Americas & R.O.W.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FME, QDD
Fujitsu Microelectronics Europe GmbH
Quantum Devices Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
FUJITSU QUANTUM DEVICES
SINGAPORE PTE LTD.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui,
Kowloon, Hong Kong
TEL: +852-23770226
FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Global Business Division
Global Sales Support Department
Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku,
Shinjuku-ku, Tokyo, 163-0721, Japan
TEL: +81-3-5322-3356
FAX: +81-3-5322-3398
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights
of Fujitsu Limited or others.
© 2001 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0101M200