Rev.2.00, Oct.23.2003, page 1 of 4
1SS106
Silicon Schottky Barrier Diode for Various Detector,
High Speed Switching REJ03G0125-0200Z
(Previous: ADE-208-153A)
Rev.2.00
Oct.23.2003
Features
• Detection efficiency is very good.
• Small temperature coefficient.
• High reliability with glass seal..
Ordering Information
Type No. Cathode 2nd band Mark Package Code
1SS106 White White H DO-35
Pin Arrangement
1. Cathode
2. Anode
Cathode band
12
2nd band
H
1SS106
Rev.2.00, Oct.23.2003, page 2 of 4
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Reverse voltage VR 10 V
Average rectified current IO 30 mA
Junction temperature Tj 125 °C
Storage temperature Tstg –55 to +125 °C
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
Forward current IF 4.5 — — mA VF = 1 V
Reverse current IR — — 70 µA VR = 6 V
Capacitance C — — 1.5 pF VR = 1 V, f = 1 MHz
ESD-Capability *1 — 100 — — V C = 200 pF, Both forward and
reverse direction 1 pulse.
Note: 1. Failure criterion; IR ≥ 140 µA at VR = 6 V
1SS106
Rev.2.00, Oct.23.2003, page 3 of 4
Main Characteristics
0 0.8 2.01.20.4 1.6 02 10864
0.1 1.0
10
1.0
0.1 10
10
–3
10
–2
10
–5
10
–4
10
–1
10
–3
10
–5
10
–4
10
–2
10
–6
f = 1MHz
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
Reverse current I
R
(A)
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
Forward current I
F
(A)
Fig.2 Capacitance vs. Reverse voltage
Reverse voltage V
R
(V)
Capacitance C (pF)
1SS106
Rev.2.00, Oct.23.2003, page 4 of 4
Package Dimensions
Package Code
JEDEC
JEITA
Mass
(reference value)
DO-35
Conforms
Conforms
0.13 g
26.0 Min 4.2 Max 26.0 Min
0.5
2.0
φ
φ
As of January, 2003
Unit: mm
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