J/SST111 SERIES SINGLE N-CHANNEL JFET FEATURES DIRECT REPLACEMENT FOR SILICONIX J/SST111 SERIES LOW GATE LEAKAGE CURRENT 5pA FAST SWITCHING 4ns ABSOLUTE MAXIMUM RATINGS J SERIES 1 SST SERIES SOT-23 TOP VIEW @ 25 C (unless otherwise stated) Maximum Temperatures Storage Temperature -55 to 150C Junction Operating Temperature -55 to 150C D 1 S 2 3 G Maximum Power Dissipation Continuous Power Dissipation (J) 3 Continuous Power Dissipation (SST) 360mW 3 350mW Maximum Currents Gate Current 50mA Maximum Voltages Gate to Drain -35V Gate to Source -35V STATIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. CHARACTERISTIC TYP J/SST111 J/SST112 J/SST113 MIN MIN MIN BVGSS Gate to Source Breakdown Voltage -35 VGS(off) Gate to Source Cutoff Voltage -3 VGS(F) Gate to Source Forward Voltage IDSS Drain to Source Saturation Current IGSS Gate Leakage Current IG Gate Operating Current ID(off) Drain Cutoff Current rDS(on) Drain to Source On Resistance Linear Integrated Systems MAX MAX -35 -10 -1 MAX UNIT -35 -5 IG = -1A, VDS = 0V -3 V 0.7 2 CONDITIONS VDS = 5V, ID = 1A IG = 1mA, VDS = 0V 20 -0.005 5 2 -1 -1 -1 1 1 1 30 50 100 -5 0.005 * mA VDS = 15V, VGS = 0V nA VGS = -15V, VDS = 0V pA VDG = 15V, ID = 1.0mA nA VDS = 5V, VGS = -10V VGS = 0V, VDS = 0.1V 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 Doc 20119 06/15/13 Rev# A5 ECN#J SST 111 DYNAMIC ELECTRICAL CHARACTERISTICS @25 C (unless otherwise stated) SYM. CHARACTERISTIC TYP J/SST111 J/SST112 J/SST113 MIN MIN MIN MAX MAX MAX UNIT gfs Forward Transconductance 6 mS gos Output Conductance 25 S rds(on) Drain to Source On Resistance 30 50 100 Ciss Input Capacitance 7 12 12 12 Crss Reverse Transfer Capacitance 3 5 5 5 Equivalent Noise Voltage 3 en SWITCHING CHARACTERISTICS SYM. td(on) tr td(off) tf CHARACTERISTIC Turn On Time Turn Off Time TYP 6 VDS = 20V, ID = 1mA f = 1kHz VGS = 0V, ID = 1mA f = 1kHz pF VDS = 0V, VGS = -10V f = 1MHz nV/Hz VDG = 10V, ID = 1mA f = 1 kHz SWITCHING CIRCUIT CHARACTERISTICS UNIT CONDITIONS 2 2 CONDITIONS J/SST111 J/SST112 J/SST113 VGS(L) -12V -7V -5V 1600 3200 6mA 3mA 800 RL VDD = 10V VGS(H) = 0V ns SYM. ID(on) 12mA 15 SOT-23 SWITCHING TEST CIRCUIT VDD 0.89 1.03 0.37 0.51 1 1.78 2.05 2.80 3.04 3 RL VGS(H) OUT VGS(L) 2 1.20 1.40 2.10 2.64 0.89 1.12 1k 0.085 0.180 0.013 0.100 51 51 0.55 DIMENSIONS IN MILLIMETERS NOTES 1. 2. 3. Absolute maximum ratings are limiting values above which serviceability may be impaired. Pulse test: PW 300s, Duty Cycle 3% Derate 2.8mW/C above 25C. Information furnished by Linear Integrated Systems is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Linear Integrated Systems (LIS) is a 25-year-old, third-generation precision semiconductor company providing high-quality discrete components. Expertise brought to LIS is based on processes and products developed at Amelco, Union Carbide, Intersil and Micro Power Systems by company President John H. Hall. Hall, a protege of Silicon Valley legend Dr. Jean Hoerni, was the director of IC Development at Union Carbide, co-founder and vice president of R&D at Intersil, and founder/president of Micro Power Systems. Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 Doc 20119 06/15/13 Rev# A5 ECN#J SST 111