© Semiconductor Components Industries, LLC, 2016
January, 2016 − Rev. 5 1Publication Order Number:
NCP152/D
NCP152
Dual 150 mA, Low IQ, Low
Dropout Voltage Regulator
The NCP152 is 150 mA, Dual Output Linear Voltage Regulator that
provides a very stable and accurate voltage with very low noise and
high Power Supply Rejection Ratio (PSRR) suitable for RF
applications. The device doesn’t require any additional noise bypass
capacitor to achieve very low noise performance. In order to optimize
performance for battery operated portable applications, the NCP152
employs the Adaptive Ground Current Feature for low ground current
consumption during light−load conditions.
Features
•Operating Input Voltage Range: 1.9 V to 5.25 V
•Two Independent Output Voltages:
(for details please refer to the Ordering Information section)
•Very Low Dropout: 150 mV Typical at 150 mA
•Low IQ of typ. 50 mA per Channel
•High PSRR: 75 dB at 1 kHz
•Two Independent Enable Pins
•Thermal Shutdown and Current Limit Protections
•Stable with a 0.22 mF Ceramic Output Capacitor
•Available in XDFN6 1.2 x 1.2 mm Package
•Active Output Discharge for Fast Output Turn−Off
•These are Pb−Free Devices
Typical Applications
•Smartphones, Tablets, Wireless Handsets
•Wireless LAN, Bluetooth®, ZigBee® Interfaces
•Other Battery Powered Applications
IN
EN1
EN2
OUT2
OUT1
GND
NCP152
VOUT2
VOUT1
COUT2
0.22 mF
COUT1
0.22 mF
CIN1
0.22 mF
VIN1
Figure 1. Typical Application Schematic
XDFN6, 1.2x1.2
CASE 711AT
MARKING
DIAGRAM
www.onsemi.com
See detailed ordering and shipping information on page 17 o
f
this data sheet.
ORDERING INFORMATION
XDFN6
(Top view)
6
5
4
1
2
3
OUT1 EN1
PIN CONNECTIONS
OUT2
GND
IN
EN2
GND
XX = Specific Device Code
M = Date Code
XX M
NCP152
www.onsemi.com
2
Figure 2. Simplified Schematic Block Diagram
GND
EN2
THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
*ACTIVE
DISCHARGE
EN1
ENABLE
LOGIC
EN1
OUT1
IN DISCHARGE
*ACTIVE
EN2
ENABLE
LOGIC THERMAL
SHUTDOWN
MOSFET
DRIVER WITH
CURRENT LIMIT
OUT2
BANDGAP
REFERENCE
PIN FUNCTION DESCRIPTION
Pin No.
XDFN6 Pin
Name Description
1 OUT1 Regulated output voltage of the first channel. A small 0.22 mF ceramic capacitor is needed from this pin to
ground to assure stability.
2 OUT2 Regulated output voltage of the second channel. A small 0.22 mF ceramic capacitor is needed from this pin
to ground to assure stability.
3 GND Power supply ground. Soldered to the copper plane allows for effective heat dissipation.
4 EN2 Driving EN2 over 0.9 V turns−on OUT2. Driving EN below 0.4 V turns−off the OUT2 and activates the active
discharge.
5 IN Input pin common for both channels. It is recommended to connect 0.22 mF ceramic capacitor close to the
device pin.
6 EN1 Driving EN1 over 0.9 V turns−on OUT1. Driving EN below 0.4 V turns−off the OUT1 and activates the active
discharge.
− EP Exposed pad must be tied to ground. Soldered to the copper plane allows for effective thermal dissipation.
NCP152
www.onsemi.com
3
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Input Voltage (Note 1) VIN −0.3 V to 6 V V
Output Voltage VOUT1,
VOUT2 −0.3 V to VIN + 0.3 V or 6 V V
Enable Inputs VEN1,
VEN2 −0.3 V to VIN + 0.3 V or 6 V V
Output Short Circuit Duration tSC Indefinite s
Maximum Junction Temperature TJ(MAX) 150 °C
Storage Temperature TSTG −55 to 150 °C
ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V
ESD Capability, Machine Model (Note 2) ESDMM 200 V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be af fected.
1. Refer to ELECTRICAL CHARACTERISTIS and APPLICATION INFORMATION for Safe Operating Area.
2. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per EIA/JESD22−A114
ESD Machine Model tested per EIA/JESD22−A115
Latchup Current Maximum Rating tested per JEDEC standard: JESD78.
THERMAL CHARACTERISTICS (Note 3)
Rating Symbol Value Unit
Thermal Characteristics, XDFN6 1.2 x 1.2 mm,
Thermal Resistance, Junction−to−Air
Thermal Characterization Parameter, Junction−to−Lead (Pin 2) qJA
qJL 170 °C/W
3. Single component mounted on 1 oz, FR4 PCB with 645mm2 Cu area.
NCP152
www.onsemi.com
4
ELECTRICAL CHARACTERISTIC
−40°C ≤ TJ ≤ 85°C; VIN = VOUT(NOM) + 1 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 1 mA, CIN = COUT = 0.22 mF. Typical
values are at TJ = +25°C. Min/Max values are specified for TJ = −40°C and TJ = 85°C respectively. (Note 4)
Parameter Test Conditions Symbol Min Typ Max Unit
Operating Input Voltage VIN 1.9 5.25 V
Output Voltage Accuracy −40°C ≤ TJ ≤ 85°CVOUT > 2 V VOUT −2 +2 %
VOUT ≤ 2 V −60 +60 mV
Line Regulation VOUT + 0.5 V or 2.5 V ≤ VIN ≤ 5 V RegLINE 0.02 0.1 %/V
Load Regulation IOUT = 1 mA to 150 mA RegLOAD 15 50 mV
Dropout Voltage (Note 5) Iout = 150 mA
VOUT(nom) = 1.5 V
VDO
370 500
mV
VOUT(nom) = 1.8 V 270 400
VOUT(nom) = 2.6 V 175 260
VOUT(nom) = 2.8 V 160 260
VOUT(nom) = 3.0 V 150 220
VOUT(nom) = 3.3 V 140 220
Output Current Limit VOUT = 90% VOUT(nom) ICL 150 mA
Quiescent Current IOUT = 0 mA, EN1 = VIN, EN2 = 0 V or EN2 = VIN,
EN1 = 0 V IQ50 100 mA
IOUT1 = IOUT2 = 0 mA, VEN1 = VEN2 = VIN IQ85 200 mA
Shutdown current (Note 6) VEN ≤ 0.4 V, VIN = 5.25 V IDIS 0.1 1 mA
EN Pin Threshold Voltage
High Threshold
Low Threshold VEN Voltage increasing
VEN Voltage decreasing VEN_HI
VEN_LO 0.9 0.4
V
EN Pin Input Current VEN = VIN = 5.25 V IEN 0.3 1.0 mA
Power Supply Rejection Ratio VIN = VOUT+1 V for VOUT > 2 V, VIN = 2.5 V,
for VOUT ≤ 2 V, IOUT = 10 mA f = 1 kHz PSRR 75 dB
Output Noise Voltage f = 10 Hz to 100 kHz VN75 mVrms
Active Discharge Resistance VIN = 4 V, VEN < 0.4 V RDIS 50 W
Thermal Shutdown Temperature Temperature increasing from TJ = +25°C TSD 160 °C
Thermal Shutdown Hysteresis Temperature falling from TSD TSDH − 20 − °C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA
= 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V.
6. Shutdown Current is the current flowing into the IN pin when the device is in the disable state.
NCP152
www.onsemi.com
5
TYPICAL CHARACTERISTICS
1.85
VOUT, OUTPUT VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
−40
IOUT = 1 mA
IOUT = 150 mA
VIN = 2.8 V
VOUT = 1.8 V
CIN = 0.22 mF
COUT = 0.22 mF
Figure 3. Output Voltage vs. Temperature
VOUT = 1.8 V
2.85
VOUT, OUTPUT VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. Output Voltage vs. Temperature
VOUT = 2.8 V
VIN = 3.8 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
IOUT = 1 mA
IOUT = 150 mA
IGND, GROUND CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
0.001
Figure 5. Ground Current vs. Output Current −
One Channel Load
450
400
350
300
250
200
150
100
50
010000.01 0.1 1 10 100
VIN = 3.8 V
VOUT = 2.8 V
VEN1 = VEN2 = VIN
CIN = 0.22 mF
COUT = 0.22 mF
1.84
1.83
1.82
1.81
1.80
1.79
1.78
1.77
1.76
1.75 −25 −10 5 20 35 50 65 80 95 −40 −25 −10 5 20 35 50 65 80 95
2.84
2.83
2.82
2.81
2.80
2.79
2.78
2.77
2.76
2.75
TJ = 85°C
TJ = 25°C
TJ = −40°C
IGND, GROUND CURRENT (mA)
IOUT, OUTPUT CURRENT (mA)
0
Figure 6. Ground Current vs. Output Current −
Different Load Combinations
750
15015 30 45 60 135
VIN = 3.8 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
VEN1 = 0 V,
VEN2 = VIN,
OUT1−LOAD
10575 90 120
675
600
525
450
375
300
225
150
75
0
VEN1 = VEN2 = VIN,
OUT1−LOAD
VEN1 = VEN2 = VIN,
OUT1−LOAD
OUT2−LOAD
100
IQ, QUIESCENT CURRENT (mA)
VIN, INPUT VOLTAGE (V)
0.0 0.5
Figure 7. Quiescent Current vs. Input Voltage−
Both Outputs ON
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VIN = 3.8 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
25°C−40°C
85°C
90
80
70
60
50
40
30
20
10
0
0.05
REGLINE, LINE REGULATION (%/V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 8. Line Regulation vs. Temperature
VOUT = 1.8 V
−40 −25 −10 5 958065503520
VIN = 2.5 V to 5.25 V
VOUT = 1.8 V
IOUT = 1 mA
CIN = 0.22 mF
COUT = 0.22 mF
0.04
0.03
0.02
0.01
0
−0.01
−0.02
−0.03
−0.04
−0.05
NCP152
www.onsemi.com
6
TYPICAL CHARACTERISTICS
REGLINE, LINE REGULATION (%/V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 9. Line Regulation vs. Temperature
VOUT = 2.8 V
20
REGLOAD, LOAD REGULATION (mV)
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Load Regulation vs. Temperature
VOUT = 1.8 V
10
REGLOAD, LOAD REGULATION (mV)
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Load Regulation vs. Temperature
VOUT = 2.8 V
350
VDROP, DROPOUT VOLTAGE (mV)
IOUT, OUTPUT CURRENT (mA)
0
Figure 12. Dropout Voltage vs. Output Current
VOUT = 1.8 V
VIN = 2.8 V
VOUT = 1.8 V
CIN = 0.22 mF
COUT = 0.22 mF
200
VDROP, DROPOUT VOLTAGE (mV)
IOUT, OUTPUT CURRENT (mA)
Figure 13. Dropout Voltage vs. Output Current
VOUT = 2.8 V
VIN = 3.8 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
350
VDROP, DROPOUT VOLTAGE (mV)
TJ, JUNCTION TEMPERATURE (°C)
Figure 14. Dropout Voltage vs. Temperature
VOUT = 1.8 V
0
VIN = 2.5 V
VOUT = 1.8 V
IOUT = 1 mA to 150 mA
CIN = 0.22 mF
COUT = 0.22 mF
VIN = 3.8 V
VOUT = 2.8 V
IOUT = 1 mA to 150 mA
CIN = 0.22 mF
COUT = 0.22 mF
9
8
7
6
5
4
3
2
1
0
TJ = 85°C
TJ = −40°C
TJ = 25°C
15015 30 45 60 75 90 135120105
VIN = 3.8 V to 5.25 V
VOUT = 2.8 V
IOUT = 1 mA
CIN = 0.22 mF
COUT = 0.22 mF
0.05
0.04
0.03
0.02
0.01
0
−0.01
−0.02
−0.03
−0.04
−0.05 −40 −25 −10 5 958065503520
18
16
14
12
10
8
6
4
2
−40 −25 −10 5 958065503520
−40 −25 −10 5 958065503520
315
280
245
210
175
140
105
70
35
0
0 15015 30 45 60 75 90 135120105
TJ = 85°C
TJ = −40°C
TJ = 25°C
180
160
140
120
100
80
60
40
20
0
VIN = 2.8 V
VOUT = 1.8 V
CIN = 0.22 mF
COUT = 0.22 mF
−40 −25 −10 5 958065503520
IOUT = 0 mA
IOUT = 150 mA
IOUT = 75 mA
315
280
245
210
175
140
105
70
35
0
NCP152
www.onsemi.com
7
TYPICAL CHARACTERISTICS
VDROP, DROPOUT VOLTAGE (mV)
TJ, JUNCTION TEMPERATURE (°C)
Figure 15. Dropout Voltage vs. Temperature
VOUT = 2.8 V
IOUT = 0 mA
IOUT = 150 mA
VIN = 3.8 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
600
VDROP, DROPOUT VOLTAGE (mV)
VOUT, OUTPUT VOLTAGE (V)
Figure 16. Dropout Voltage vs. Output Voltage
0.9 1.2 1.5 1.8 2.1 3.63.33.02.72.4
IOUT = 75 mA
−40 −25 −10 5 958065503520
200
180
160
140
120
100
80
60
40
20
0
500
400
300
200
100
0
400
ISC, SHORT−CIRCUIT CURRENT (mA)
TJ, JUNCTION TEMPERATURE (°C)
VIN = 3.8 V
VOUT = 0 V
CIN = 0.22 mF
COUT = 0.22 mF
Figure 17. Short−Circuit Current vs.
Temperature
300
ISC, SHORT−CIRCUIT CURRENT (mA)
VIN, INPUT VOLTAGE (V)
2.4 6.0
Figure 18. Short−Circuit Current vs. Input
Voltage
VOUT = 0 V
CIN = 0.22 mF
COUT = 0.22 mF
−40 −25 −10 5 958065503520
360
320
280
240
200
160
120
80
40
0
270
240
210
180
150
120
90
60
30
02.8 3.2 3.6 4.0 4.4 4.8 5.2 5.6
200
IDIS, DISABLE CURRENT (nA)
TJ, JUNCTION TEMPERATURE (°C)
Figure 19. Disable Current vs. Temperature
VIN = 5.5 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
−40 −25 −10 5 958065503520
180
160
140
120
100
80
60
40
20
0
1
VEN, ENABLE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (°C)
Figure 20. Enable Voltage Threshold vs.
Temperature
VIN = 3.8 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
OFF −> ON
ON −> OFF
−40 −25 −10 5 958065503520
NCP152
www.onsemi.com
8
TYPICAL CHARACTERISTICS
500
IEN, ENABLE CURRENT (nA)
TJ, JUNCTION TEMPERATURE (°C)
Figure 21. Current to Enable Pin vs.
Temperature
VIN = 3.8 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
450
400
350
300
250
200
150
100
50
0
−40 −25 −10 5 958065503520
50
RDIS, DISCHARGE RESISTIVITY (W)
TJ, JUNCTION TEMPERATURE (°C)
Figure 22. Discharge Resistance vs.
Temperature
−40 −25 −10 5 958065503520
VIN = 3.8 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
45
40
35
30
25
20
15
10
5
0
100
RR, RIPPLE REJECTION (dB)
FREQUENCY (kHz)
Figure 23. Power Supply Rejection Ratio,
VOUT = 1.2 V, COUT = 0.22 mF
RR, RIPPLE REJECTION (dB)
FREQUENCY (kHz)
Figure 24. Power Supply Rejection Ratio,
VOUT = 1.2 V, COUT = 1 mF
0.1
IOUT = 1 mA
IOUT = 10 mA
IOUT = 100 mA
IOUT = 150 mA
VIN = 2.5 V
VOUT = 1.2 V
CIN = none
COUT = 0.22 mF
1 10000100010 100
100
0.1 1 10000100010 100
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
IOUT = 1 mA
IOUT = 10 mA
IOUT = 100 mA
IOUT = 150 mA
VIN = 2.5 V
VOUT = 1.2 V
CIN = none
COUT = 1 mF
100
RR, RIPPLE REJECTION (dB)
FREQUENCY (kHz)
Figure 25. Power Supply Rejection Ratio,
VOUT = 2.8 V, COUT = 0.22 mF
RR, RIPPLE REJECTION (dB)
FREQUENCY (kHz)
Figure 26. Power Supply Rejection Ratio,
VOUT = 2.8 V, COUT = 1 mF
0.1
IOUT = 1 mA
IOUT = 10 mA
IOUT = 100 mA
IOUT = 150 mA
VIN = 3.8 V
VOUT = 2.8 V
CIN = none
COUT = 0.22 mF
1 10000100010 100
100
0.1 1 10000100010 100
90
80
70
60
50
40
30
20
10
0
90
80
70
60
50
40
30
20
10
0
IOUT = 1 mA
IOUT = 10 mA
IOUT = 100 mA
IOUT = 150 mA
VIN = 3.8 V
VOUT = 2.8 V
CIN = none
COUT = 1 mF
NCP152
www.onsemi.com
9
Figure 27. Output Voltage Noise Spectral Density for VOUT = 1.8 V, COUT = 220 nF
FREQUENCY (kHz)
10001010.10.01
10
Figure 28. Output Voltage Noise Spectral Density for VOUT = 1.8 V, COUT = 1 mF
Figure 29. Output Voltage Noise Spectral Density for VOUT = 2.8 V, COUT = 220 nF
OUTPUT VOLTAGE NOISE (mV/rtHz)
VIN = 2.8 V
VOUT = 1.8 V
CIN = 0.22 mF
COUT = 0.22 mF
MLCC, X7R,
1206 size
1 mA 68.07 67.07
10 mA 67.30 66.31
150 mA 69.74 68.80
10 Hz − 100 kHz 100 Hz − 100 kHz
RMS Output Noise (mV)
IOUT
FREQUENCY (kHz)
OUTPUT VOLTAGE NOISE (mV/rtHz)
FREQUENCY (kHz)
OUTPUT VOLTAGE NOISE (mV/rtHz)
100
10001010.10.01 100
10001010.10.01 100
IOUT = 1 mA
IOUT = 150 mA
1 mA 76.23 75.33
10 mA 67.12 66.12
150 mA 69.06 68.12
10 Hz − 100 kHz 100 Hz − 100 kHz
RMS Output Noise (mV)
IOUT
IOUT = 10 mA
IOUT = 1 mA
IOUT = 150 mA
1 mA 93.42 91.99
10 mA 92.88 91.45
150 mA 94.67 93.26
10 Hz − 100 kHz 100 Hz − 100 kHz
RMS Output Noise (mV)
IOUT
IOUT = 10 mA
IOUT = 1 mA
IOUT = 150 mA
IOUT = 10 mA
1
0.1
0.01
0.001
10
1
0.1
0.01
0.001
VIN = 2.8 V
VOUT = 1.8 V
CIN = 1 mF
COUT = 1 mF
MLCC, X7R,
1206 size
10
1
0.1
0.01
0.001
VIN = 3.8 V
VOUT = 2.8 V
CIN = 0.22 mF
COUT = 0.22 mF
MLCC, X7R,
1206 size
NCP152
www.onsemi.com
10
Figure 30. Output Voltage Noise Spectral Density for VOUT = 2.8 V, COUT = 1 mF
FREQUENCY (kHz)
OUTPUT VOLTAGE NOISE (mV/rtHz)
10001010.10.01 100
1 mA 102.14 100.86
10 mA 93.03 91.59
150 mA 94.74 93.12
10 Hz − 100 kHz 100 Hz − 100 kHz
RMS Output Noise (mV)
IOUT
IOUT = 10 mA
IOUT = 1 mA
IOUT = 150 mA
10
1
0.1
0.01
0.001
VIN = 3.8 V
VOUT = 2.8 V
CIN = 1 mF
COUT = 1 mF
MLCC, X7R,
1206 size
100
ESR (W)
IOUT, OUTPUT CURRENT (mA)
0
Figure 31. Output Capacitor ESR vs. Output
Current
10
1
0.1
0.01 15 30 45 90 135 150
UNSTABLE OPERATION
STABLE OPERATION
60 75 120105
VOUT = 2.8 V
VOUT = 1.8 V
NCP152
www.onsemi.com
11
TYPICAL CHARACTERISTICS
VIN = 3.8 V
VOUT1 = disable
VOUT2 = 1.2 V
IOUT1 = 10 mA
COUT1 = COUT2 = 220 nF
500 mV/div1 V/div
50 mA/div
IIN
40 ms/div
VEN
VOUT2
500 mV/div1 V/div
40 ms/div
1 V/div
VOUT1
IIN
VEN
VOUT2
VOUT1 VIN = 3.8 V
VOUT1 = 2.8 V
VOUT2 = 1.2 V
IOUT1 = 10 mA
IOUT2 = 10 mA
COUT1 = COUT2 = 220 nF
50 mA/div
Figure 32. Enable Turn−on Response −
VR1 = Off, VR2 = 10 mA Figure 33. Enable Turn−on Response −
VR1 = 10 mA, VR2 = 10 mA
1 V/div
Figure 34. Enable Turn−on Response −
VR1 = Off, VR2 = 150 mA
500 mV/div1 V/div
50 mA/div
40 ms/div
50 mA/div
500 mV/div1 V/div
Figure 35. Enable Turn−on Response −
VR1 = 10 mA, VR2 = 150 mA
40 ms/div
1 V/div
IIN
VEN
VOUT2
VOUT1 VIN = 3.8 V
VOUT1 = disable
VOUT2 = 1.2 V
IOUT2 = 150 mA
COUT1 = COUT2 = 220 nF
1 V/div
IIN
VEN
VOUT2
VOUT1 VIN = 3.8 V
VOUT1 = 2.8 V
VOUT2 = 1.2 V
IOUT1 = 10 mA
IOUT2 = 150 mA
COUT1 = COUT2 = 220 nF
500 mV/div20 mV/div
Figure 36. Line Transient Response − Rising
Edge, VEN1 = 0 V, VEN2 = VIN, VOUT2 = 3.3 V,
IOUT2 = 10 mA
2 ms/div
tRISE = 1 ms
VIN
VOUT2
Figure 37. Line Transient Response − Falling
Edge, VEN1 = 0 V, VEN2 = VIN, VOUT2 = 3.3 V,
IOUT2 = 10 mA
2 ms/div
500 mV/div
tFALL = 1 ms
VOUT2
VIN
VOUT1
VIN = 3.8 V to 4.8 V
IOUT2 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
20 mV/div
VOUT1
20 mV/div
20 mV/div
VIN = 4.8 V to 3.8 V
IOUT2 = 150 mA
COUT1 = 220 nF
COUT2 = 220 nF
NCP152
www.onsemi.com
12
TYPICAL CHARACTERISTICS
Figure 38. Line Transient Response − Rising
Edge, VEN1 = 0 V, VEN2 = VIN, VOUT2 = 3.3 V,
IOUT2 = 150 mA
500 mV/div20 mV/div
2 ms/div
VIN
VOUT2
500 mV/div20 mV/div
Figure 39. Line Transient Response − Falling
Edge, VEN1 = 0 V, VEN2 = VIN, VOUT2 = 3.3 V,
IOUT2 = 150 mA
2 ms/div
VIN
VOUT1
50 mA/div20 mV/div
Figure 40. Load Transient Response − Rising
Edge, IOUT = 1 mA to 150 mA
2 ms/div
tRISE = 1 ms
IOUT2
VOUT1
Figure 41. Load Transient Response − Falling
Edge, IOUT = 150 mA to 1 mA
10 ms/div
20 mV/div
tFALL = 1 ms
VOUT1
20 mV/div
Figure 42. Load Transient Response − Rising
Edge, IOUT = 0.1 mA to 150 mA
2 ms/div
tRISE = 500 ns
VOUT2
Figure 43. Load Transient Response − Falling
Edge, IOUT = 150 mA to 0.1 mA
10 ms/div
20 mV/div
tFALL = 500 ns
tRISE = 1 ms
50 mA/div
IOUT2
50 mA/div
IOUT2
50 mA/div
VOUT1
20 mV/div
VOUT2
tFALL = 1 ms
20 mV/div
VIN = 3.8 V to 4.8 V
IOUT2 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
VIN = 4.8 V to 3.8 V
IOUT2 = 150 mA
COUT1 = 220 nF
COUT2 = 220 nF
VOUT2 VIN = 3.8 V
VOUT1 = 2.8 V
VOUT2 = 1.2 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
50 mA/div
VOUT2
50 mA/div
VIN = 3.8 V
VOUT1 = 2.8 V
VOUT2 = 1.2 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
100 mV/div
VOUT1
VIN = 3.8 V
VOUT1 = 2.8 V
VOUT2 = 1.2 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
VOUT2
IOUT2
VOUT1
100 mV/div
VIN = 3.8 V
VOUT1 = 2.8 V
VOUT2 = 1.2 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
NCP152
www.onsemi.com
13
TYPICAL CHARACTERISTICS
50 mA/div20 mV/div
Figure 44. Load Transient Response − Rising
Edge, IOUT = 50 mA to 150 mA
2 ms/div
tRISE = 500 ns
Figure 45. Load Transient Response − Falling
Edge, IOUT = 150 mA to 50 mA
2 ms/div
20 mV/div
tFALL = 500 ns
VOUT2
IOUT2
VOUT1
VIN = 3.8 V
VOUT1 = 2.8 V
VOUT2 = 1.2 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
50 mV/div
50 mV/div
VOUT2
IOUT2
VOUT1
VIN = 3.8 V
VOUT1 = 2.8 V
VOUT2 = 1.2 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
50 mA/div
50 mA/div20 mV/div
VOUT1
IOUT1
VOUT2
VIN = 4.3 V
VOUT1 = 3.3 V
VOUT2 = 3.0 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
50 mV/div
50 mA/div20 mV/div 50 mV/div
VOUT1
IOUT1
VOUT2
VIN = 4.3 V
VOUT1 = 3.3 V
VOUT2 = 3.0 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
Figure 46. Load Transient Response − Rising
Edge, IOUT = 0.1 mA to 150 mA
2 ms/div
Figure 47. Load Transient Response − Rising
Edge, IOUT = 1 mA to 150 mA
2 ms/div Figure 48. Load Transient Response − Falling
Edge, IOUT = 150 mA to 1 mA
10 ms/div
50 mA/div20 mV/div 100 mV/div
VOUT1
IOUT1
VOUT2
VIN = 4.3 V
VOUT1 = 3.3 V
VOUT2 = 3.0 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
tRISE = 500 ns tFALL = 500 ns
tRISE = 1 ms
50 mA/div20 mV/div 100 mV/div
VOUT1
IOUT1
VOUT2
VIN = 4.3 V
VOUT1 = 3.3 V
VOUT2 = 3.0 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
tFALL = 1 ms
Figure 49. Load Transient Response − Falling
Edge, IOUT = 150 mA to 0.1 mA
20 ms/div
NCP152
www.onsemi.com
14
TYPICAL CHARACTERISTICS
50 mA/div20 mV/div
Figure 50. Load Transient Response − Rising
Edge, IOUT = 50 mA to 150 mA
2 ms/div
tRISE = 1 ms
Figure 51. Load Transient Response − Falling
Edge, IOUT = 150 mA to 50 mA
2 ms/div
20 mV/div
tFALL = 1 ms
VOUT1
IOUT1
VOUT2
50 mA/div
VOUT1
VIN
VOUT2
VIN = 4.3 V
VOUT1 = 3.3 V
VOUT2 = 3.0 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
1 V/div
50 mA/div500 mV/div
VOUT1
IOUT1
VIN = 5.5 V
VOUT1 = 1.2 V
VOUT2 = 3.0 V
CIN = COUT1 =
COUT1 = 220 nF
100 ms/div
Figure 52. Turn−on/off − Slow Rising VIN
20 ms/div Figure 53. Short−Circuit and Thermal
Shutdown
10 ms/div
VOUT1
VEN
50 mV/div
50 mV/div
VIN = 4.3 V
VOUT1 = 3.3 V
VOUT2 = 3.0 V
IOUT1 = 10 mA
COUT1 = 220 nF
COUT2 = 220 nF
VOUT1
IOUT1
VOUT2
Figure 54. Enable Turn−off
VIN = 4.3 V
VOUT1 = 2.8 V
IOUT1 = 10 mA
IOUT2 = 10 mA
CIN = COUT1 =
COUT1 = 220 nF
Overheating
Full Load
Thermal Shutdown TSD Cycling
500 mV/div1 V/div
tFALL = 1 ms
COUT = 220 nF
COUT = 1 mF
COUT = 4.7 mF
VIN = 3.8 V
VOUT1 = 2.8 V
VOUT2 = 1.2 V
NCP152
www.onsemi.com
15
APPLICATIONS INFORMATION
General
The NCP152 is a dual output high performance 150 mA
Low Dropout Linear Regulator. This device delivers very
high PSRR (75 dB at 1 kHz) and excellent dynamic
performance as load/line transients. In connection with low
quiescent current this device is very suitable for various
battery powered applications such as tablets, cellular
phones, wireless and many others. Each output is fully
protected in case of output overload, output short circuit
condition and overheating, assuring a very robust design.
The NCP152 device is housed in XDFN−6 1.2 mm x
1.2 mm package which is useful for space constrains
application.
Input Capacitor Selection (CIN)
It is recommended to connect at least a 0.22 mF Ceramic
X5R or X7R capacitor as close as possible to the IN pin of
the device. This capacitor will provide a low impedance path
for unwanted AC signals or noise modulated onto constant
input voltage. There is no requirement for the min. or max.
ESR of the input capacitor but it is recommended to use
ceramic capacitors for their low ESR and ESL. A good input
capacitor will limit the influence of input trace inductance
and source resistance during sudden load current changes.
Larger input capacitor may be necessary if fast and large
load transients are encountered in the application.
Output Decoupling (COUT)
The NCP152 requires an output capacitor for each output
connected as close as possible to the output pin of the
regulator. The recommended capacitor value is 0.22 mF and
X7R or X5R dielectric due to its low capacitance variations
over the specified temperature range. The NCP152 is
designed to remain stable with minimum effective
capacitance of 0.15 mF to account for changes with
temperature, D C bias and package size. Especially for small
package size capacitors such as 0201 the effective
capacitance drops rapidly with the applied DC bias.
There is no requirement for the minimum value of
Equivalent Series Resistance (ESR) for the COUT but the
maximum value of ESR should be less than 2 W. Larger
output capacitors and lower ESR could improve the load
transient response or high frequency PSRR. It is not
recommended to use tantalum capacitors on the output due
to their large ESR. The equivalent series resistance of
tantalum capacitors is also strongly dependent on the
temperature, increasing at low temperature.
Enable Operation
The NCP152 uses the dedicated EN pin for each output
channel. This feature allows driving outputs separately.
If the EN pin voltage is <0.4 V the device is guaranteed to
be disabled. The pass transistor is turned−off so that there is
virtually no current flow between the IN and OUT. The
active dischar ge transistor is active so that the output voltage
VOUT is pulled to GND through a 50 W resistor. In the
disable state the device consumes as low as typ. 10 nA from
the VIN.
If the EN pin voltage >0.9 V the device is guaranteed to
be enabled. The NCP152 regulates the output voltage and
the active discharge transistor is turned−off.
The both EN pin has internal pull−down current source
with typ. value of 300 nA which assures that the device is
turned−off when the EN pin is not connected. In the case
where the EN function isn’t required the EN should be tied
directly to IN.
Output Current Limit
Output Current is internally limited within the IC to a
typical 280 mA. The NCP152 will source this amount of
current measured with a voltage drops on the 90% of the
nominal VOUT. If the Output Voltage is directly shorted to
ground (VOUT = 0 V), the short circuit protection will limit
the output current to 300 mA (typ). The current limit and
short circuit protection will work properly over whole
temperature range and also input voltage range. There is no
limitation for the short circuit duration. This protection
works separately for each channel. Short circuit on the one
channel do not influence second channel which will work
according to specification.
Thermal Shutdown
When the die temperature exceeds the Thermal Shutdown
threshold (TSD − 160°C typical), Thermal Shutdown event
is detected and the affected channel is turn−off. Second
channel still working. The channel which is overheated will
remain in this state until the die temperature decreases below
the Thermal Shutdown Reset threshold (TSDU − 140°C
typical). Once the device temperature falls below the 140°C
the appropriate channel is enabled again. The thermal
shutdown feature provides the protection from a
catastrophic device failure due to accidental overheating.
This protection is not intended to be used as a substitute for
proper heat sinking. The long duration of the short circuit
condition t o some output channel could cause turn−off other
output when heat sinking is not enough and temperature of
the other output reach TSD temperature.
Power Dissipation
As power dissipated in the NCP152 increases, it might
become necessary to provide some thermal relief. The
maximum power dissipation supported by the device is
dependent upon board design and layout. Mounting pad
configuration on the PCB, the board material, and the
ambient temperature affect the rate of junction temperature
rise for the part.
The maximum power dissipation the NCP152 can handle
is given by:
PD(MAX) +ƪ125°C*TAƫ
qJA
(eq. 1)
NCP152
www.onsemi.com
16
The power dissipated by the NCP152 for given
application conditions can be calculated from the following
equations:
PD[VIN IGND )IOUT1ǒVIN *VOUT1Ǔ(eq. 2)
)IOUT2ǒVIN *VOUT2Ǔ
Figure 55. qJA vs. Copper Area (XDFN−6)
0.25
0.50
0.75
1.00
1.25
60
80
100
120
140
160
180
200
220
240
0 100 200 300 400 500 600 700
COPPER HEAT SPREADER AREA (mm2)
qJA, JUNCTION−TO−AMBIENT
THERMAL RESISTANCE (°C/W)
PD(MAX), MAXIMUM POWER
DISSIPATION (W)
PD(MAX), TA = 25°C, 2 oz Cu
PD(MAX), TA = 25°C, 1 oz Cu
qJA, 1 oz Cu
qJA, 2 oz Cu
Reverse Current
The PMOS pass transistor has an inherent body diode
which will be forward biased in the case that VOUT > VIN.
Due to this fact in cases, where the extended reverse current
condition can be anticipated the device may require
additional external protection.
Power Supply Rejection Ratio
The NCP152 features very good Power Supply Rejection
ratio. If desired the PSRR at higher frequencies in the range
100 kHz − 10 MHz can be tuned by the selection of COUT
capacitor and proper PCB layout.
Turn−On Time
The turn−on time is defined as the time period from EN
assertion to the point in which VOUT will reach 98% of its
nominal value. This time is dependent on various
application conditions such as VOUT(NOM), COUT, TA.
PCB Layout Recommendations
To obtain good transient performance and good regulation
characteristics place input and output capacitors close to the
device pins and make the PCB traces wide. In order to
minimize the solution size, use 0402 capacitors. Larger
copper area connected to the pins will also improve the
device thermal resistance. The actual power dissipation can
be calculated from the equation above (Equation 2). Expose
pad should be tied the shortest path to the GND pin.
NCP152
www.onsemi.com
17
ORDERING INFORMATION
Device Voltage Option*
(OUT1/OUT2) Marking Marking
Rotation Package Shipping†
NCP152MX150280TCG 1.5 V/2.8 V D 0°
XDFN-6
(Pb-Free) 3000 / Tape & Reel
NCP152MX180180TCG 1.8 V/1.8 V KA 0°
NCP152MX180280TCG 1.8 V/2.8 V A 0°
NCP152MX180150TCG 1.8 V/1.5 V Q 0°
NCP152MX280120TCG 2.8 V/1.2 V V 0°
NCP152MX280180TCG 2.8 V/1.8 V A 90°
NCP152MX300280TCG 3.0 V/2.8 V F 0°
NCP152MX300180TCG 3.0 V/1.8 V J 0°
NCP152MX300300TCG 3.0 V/3.0 V P 0°
NCP152MX330180TCG 3.3 V/1.8 V E 0°
NCP152MX330280TCG 3.3 V/2.8 V K 0°
NCP152MX330330TCG 3.3 V/3.3 V L 0°
NCP152MX330300TCG 3.3 V/3.0 V 2 0°
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact factory for other voltage options. Output voltage range 1.0 V to 3.3 V with step 50 mV.
NCP152
www.onsemi.com
18
PACKAGE DIMENSIONS
XDFN6 1.2x1.2, 0.4P
CASE 711AT
ISSUE A
MOUNTING FOOTPRINT*
DIMENSIONS: MILLIMETERS
0.35
6X
0.24
6X
1.40
0.40
PITCH
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
RECOMMENDED
PACKAGE
OUTLINE
1.08
0.40 1
ÍÍÍ
ÍÍÍ
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.15 AND 0.25mm FROM TERMINAL TIPS.
4. COPLANARITY APPLIES TO THE PAD AS
WELL AS THE TERMINALS.
A
SEATING
PLANE
0.05 C
A
A1
2X
2X 0.05 C
DIM
A
MIN MAX
MILLIMETERS
0.30 0.45
A1 0.00 0.05
b0.13 0.23
D
E
e
L
PIN ONE
REFERENCE
0.05 C
0.05 C
NOTE 3
L
eb
3
66X
1
4
0.15 0.25
BOTTOM VIEW
E2
E2 0.20 0.40
TOP VIEW
B
SIDE VIEW
NOTE 4 C
6X
A
M
0.10 BC
D2 0.84 1.04
L1
1.20 BSC
1.20 BSC
0.40 BSC
0.05 REF
D2
D
E
DET AIL A
DET AIL A
ÉÉ
ÇÇ
ÇÇ
DETAIL A
MOLD CMPDEXPOSED Cu
OPTIONAL
CONSTRUCTION
L1
6X
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC
reserves the r ight t o m ake c hanges wit hout f urt her n ot ice t o a ny p roduct s h erein. SCILLC makes n o w arranty, represent ation o r guarantee r egarding t he s uit ability o f its p roducts f or a ny
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation s pecial, c onsequential o r i ncidental d amages. “Typical” p arameters w hich m ay b e p rovided i n S CILLC d ata s heets a nd/ or s pecif ications c an a nd d o v ary i n d if ferent a pplicat ions
and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC
does not convey any license under i ts p at ent rights nor the rights of o t hers. S CI LLC p r oducts a re not designed, intended, or a ut horized f or use as components in systems intended for
surgical implant i nto t he b ody, or o ther a pplications i ntended t o s upport or s ustain l ife, o r f or any o ther a pplication i n w hich t he f ailure o f t he S CILLC p roduct c ould c reate a s ituation w here
personal injury or death may occur. Should Buyer purchase or use S CILLC p r oduct s f or any such unintended or unaut horized a ppli cat ion, B uyer s hall i ndemnif y a n d h old S CI LLC and
its o f ficers, e mployees, s ubsidiaries, a ff iliates, and distributors h armless a gainst a ll c laims, c osts, d amages, a nd e x penses, a nd r easonable a ttorney f ees a rising o ut o f, d irectly o r i ndirect ly,
any claim of personal injury or death associated with such unintended or unauthorized use, even if su ch c laim a lleges that SCILLC was negligent regarding the d esign or manufacture
of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
P
UBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NCP152/D
ZigBee is a registered trademark of ZigBee Alliance.
Bluetooth is a registered trademark of Bluetooth SIG.
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your loc
al
Sales Representative
