MOTOROLA SC CXSTRS/R F) UBE D MM 6367254 0094072 7? BENOTL MOTOROLA a - = SEMICONDUCTOR F2S-17 TECHNICAL DATA _ 2N5160 The RF Line Ic = -400 mA POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR PNP SILICON . designed for amplifier, frequency multiplier or oscillator applica- tions in military and industrial equipment. Suitable for use as Class A, 8B, or C output driver, or pre-driver stages in VHF and UHF. @ High Power Gain Gpg = 8.0 dB (Min) @ f = 400 MHz, 14.5 db (Typ) @ 175 MHz No Emitter Tuning Power Output Poy, = 1.0 Watt (Min @ f = 400 MHz = 1.5 Watt (Typ) @ f = 175 MHz @ Resists Burnout When Load is Shorted or Opened Designed for Use in Complementary Circuits with 2N3866 (* @ MIL-S-19500 Processed Versions Available as MRF5160HX, MRF5160HXV = r STYLE * * PINT EMITTER 2 BASE scouecron #202000 oT AY HM vr tee G M f q cf *MAXIMUM RATINGS Noy NOTES Rating Symbol Value Unit 1 DIMENSIONING ANC TOLERANCING PER ANSI 1a SM 1982 Collector-Emitter Voltage VcEO -40 Vde 2 CONTROLLING DIMENSION INCH T _ 2 DIMENSION J MEASURED FROM DIMENSION A Collector-Base Voltage Ves 60 Vde MAXIMUM Emitter-Base Voltage Vep ~4.0 Vde 4 OIMENSION 8 SHALL NOT VARY MORE THAN 0 25 9.0101 IN ZONE R THIS ZONE CONTROLLED FOR Collector Current Ic 04 Adc AUTOMATIC HANDLING - 5 QIMENSION F APPLIES BETWEEN DIMENSION P Total Device Dissipation @ Tce = 25C Pp 50 Watts AND L DIMENSION APPLIES BETWEEN Derate above 25C 28.6 mwrc DIMENSION | AND K MINIMUM LEAD DIAMETER 1 UNCONTROLLED IN DIMENSION P ANO Operating and Storage Junction Ty, Tstg -65 to +200 C BEYOND DIMENSION K MINIMUM Temperature Range MILLIMETERS INCHES tndicates JEDEC Registered Data Gi, _,_ MAX AHN _MAX 84) 939, 0335 0370, A "8 7775 7950, 0305 | 0335 | Tc 7 610; 660 7 0260 0260 D " o41 * 053 | O01 7 0021 Te Teen 10d" 0003 | 0041 F. oa). 048. 00% 0019 , G7 Sovesc * oagasc Wo 086 "00 "00m | _! 074 144 0029 | 0045 * 1270 1905 , 0506 . 0750 i! 63] = 0250 a 45 85 | 45 BSC = 7? 0080 24) To CASE 79-04 TO-205AD (TO-39) a MOTOROLA RF DEVICE DATA 2-50 MOTOROLA SC (CXSTRS/R F) 4bE D MM 6367254 0094073 9 MENOTL 2N5160 T33-14 *ELECTRICAL CHARACTERISTICS (Tg = 25C unless otherwise noted) Characteristic l Symbol I Min Typ | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage VCEO(sus) -40 _- _ Vde {(i = -~50 mAdc, Ip = 0) Emitter-Base Breakdawn Voltage V(BR)EBO(sus) -40 _ _ Vde (le = ~-0.1 mAds, Ic = 0} Collector Cutoff Current IcEO _ ~ -20 pwAde (Vcg = -28 Vdc, Ig = 0) Collector Cutoff Current Ices _ _ -0.1 mAdc (Vce = -60 Vdc, Vee = 0) Collector Cutoff Current lcBO _ _- -14.0 pAdc {Vog = 28 Vde, Ip = 0) ON CHARACTERISTICS OC Current Gain hee 10 (l = -50 mAdc, Voge = -5.0 Vde) DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Praduct fr 500 900 =~ MHz {I = ~50 mAdc, Vcg = 15 Vde, f = 200 MHz) Coltector-Base Capacitance Cob _ 2.5 4.0 pF (Vcg = -2B Vde, Ip = 0, f = 0.1 to 1.0 MHz) FUNCTIONAL TESTS Common-Emitter Amplifier Power Gain Gp dB (Vce = ~28 Vde, Pin = 0 16 Watt, f = 400 MHz) 8.0 8.8 _ (VCE = 28 Vdc, Pi, = 50 mW, f = 175 MHz) - 14.5 - Power Output Pout Watt (VCE = ~28 Vde, Pin = 016 Watt, f = 400 MHz) 1.0 12 _ (Vce = - 28 Vde, Pi, = 50 mW, f = 176 MHz) _ 1.4 _ Collector Efficiency n 45 55 % {Vee = 28 Vde, Pip = 0.16 Watt, f = 400 MHz) "Indicates JEDEC Registered Data FIGURE 1 400-MHz TEST CIRCUIT Cy - 10 pF Cg - 0.01 pF T C7 I Cg C2, C3, Cg, Cy 10 - 10 pF variable Ly 930nH, 1 turn, No. 20 AWG ~ t ] Cg 2400 pF feed through La 75nH, 3 turns, No. 20 AWG C7 - 0.004 .F Lg 0.33 gH, A.F.C. C3 Ly D at DUT I Te CAR Hy, MOTOROLA RF DEVICE DATA 2-51 MOTOROLA SC CXSTRS/R F) FIGURE 2 POWER OUTPUT versus FREQUENCY Pin = 76mW Pou, POWER OUTPUT (WATTS) 0 100 180 200 250 300 400 {, FREQUENCY (MHz) FIGURE 4 PARALLEL INPUT IMPEDANCE versus FREQUENCY 100 Vee = -28V ~ 3 & Pout = 10W 8s REAL IMPEDANCE {OHMS) 8 f, FREQUENCY [MH2) FIGURE 6 PARALLEL OUTPUT CAPACITANCE versus FREQUENCY Coup OUTPUT CAPACITANCE (pF) 150 200 260 # FREQUENCY (MHz) 300 WBE T3S17 2N5160 D @@ 6367254 0094074 O MEMNOTL FIGURE 3 POWER OUTPUT versus POWER INPUT Vee = 28 20V f = 176 MHz 10 a5 Pou, POWER OUTPUT (WATTS) 0 20 40 80 100 Pi POWER INPUT {mW) FIGURE 5 PARALLEL INPUT IMPEDANCE versus FREQUENCY 40 * | | I I 1 ; Vce = 2BV B x5 1 z= i i 2 elt ee +90 Pout = 10W 4 2 a a 075 W S +105 4 = Ne ; = 2 | : z= +120 + t ~ = | Sl : | ' +715 | ! 0 100 200 300 200 f, FREQUENCY {MHz} FIGURE 7 CURRENT-GAIN BANDWIDTH PRODUCT versus COLLECTOR CURRENT Veg = 10 ty, CURRENT GAIN BANDWIDTH PRODUCT (GHz) 0 ~ 100 180 Ig, COLLECTOR CURRENT (mA) 200 ee MOTOROLA RF DEVICE DATA 2-52 2N5160 MOTOROLA SC CXSTRS/R F) 4bE TT33-17 D M@@ 6367254 0094075 2 MEMOTL FIGURE 8 2N5160 300-MHz COMPLEMENTARY POWER OUTPUT CIRCUIT 500 pF RFC rN O +56 V ft ; = 470 pF FR 0.003 pF = Ei 2N5160 6.0 pF Sh COUPLING aw Rg = 509 GaP +80 nH RL = 500 10- DpF 10-10 9F Phi o- 109 F410 7 + FIGURE 9 COMPLEMENTARY CIRCUIT POWER OUTPUT versus POWER INPUT f= 300 MHz 2 = = E = 5 So a = 2 2 . Pin, POWER INPUT (mW) MOTOROLA RF DEVICE DATA 2-53