BUV23 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data





    

. . . designed for high current, high speed, high power applications.

•High DC current gain: HFE min. = 15 at IC = 8 A

•Low VCE(sat), VCE(sat) max. = 0.8 V at IC = 8 A

•Very fast switching times:

TF = 0.4 µs at IC = 16 A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎÎÎÎ

325

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎÎÎ

VCBO

ÎÎÎÎÎÎÎÎ

400

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎÎÎ

VEBO

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage (VBE = –1.5 V)

ÎÎÎÎÎÎÎ

VCEX

ÎÎÎÎÎÎÎÎ

400

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage (RBE = 100 Ω)

ÎÎÎÎÎÎÎ

VCER

ÎÎÎÎÎÎÎÎ

390

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Current— Continuous

— Peak (pw

10 ms)

ÎÎÎÎÎÎÎ

ICM

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

Apk

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Current continuous

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎ

250

ÎÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage JunctionTemperature Range

ÎÎÎÎÎÎÎ

TJ,Tstg

ÎÎÎÎÎÎÎÎ

–65 to 200

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎÎÎ

θJC

ÎÎÎÎÎÎÎÎ

0.7

ÎÎÎÎ

C/W

Figure 1. Power Derating

1.0

0TC, TEMPERATURE (

40 80 160 200

0.4

0.8

0.6

0.2

120

DERATING FACTOR

SWITCHMODE is a trademark of Motorola, Inc.



SEMICONDUCTOR TECHNICAL DATA Order this document

by BUV23/D

 Motorola, Inc. 1995



30 AMPERES

NPN SILICON

POWER

METAL TRANSISTOR

325 VOLTS

250 WATTS

CASE 197A–05

TO–204AE

(TO–3)

REV 7

BUV23

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 200 mA, IB = 0, L = 25 mH)

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎ

325

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current at Reverse Bias

(VCE = 400 V, VBE = –1.5 V)

(VCE = 400 V, VBE = –1.5 V, TC = 125

ÎÎÎÎÎ

ICEX

ÎÎÎÎÎ

ÎÎÎÎ

3.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Cutoff Current

(VCE = 260 V)

ÎÎÎÎÎ

ICEO

ÎÎÎÎÎ

ÎÎÎÎ

3.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Reverse Voltage

(IE = 50 mA)

ÎÎÎÎÎ

VEBO

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Cutoff Current

(VEB = 5 V)

ÎÎÎÎÎ

IEBO

ÎÎÎÎÎ

ÎÎÎÎ

1.0

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with base forward biased

(VCE = 20 V, t = 1 s)

(VCE = 140 V, t = 1 s)

ÎÎÎÎÎ

IS/b

ÎÎÎÎÎ

0.15

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS1

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 8 A, VCE = 4 V)

(IC = 16 A, VCE = 4 V)

ÎÎÎÎÎ

hFE

ÎÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 8 A, IB = 1.6 A)

(IC = 16 A, IB = 3.2 A)

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎÎ

ÎÎÎÎ

0.8

1.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 16 A, IB = 3.2 A)

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎÎ

ÎÎÎÎ

1.5

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current Gain — Bandwidth Product

(VCE = 15 V, IC = 2 A, f = 4 MHz)

ÎÎÎÎÎ

8.0

ÎÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS (Resistive Load)

ÎÎÎÎÎÎÎÎÎ

Turn–on Time

ÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 16 A, IB1 = IB2 = 3.2 A,

VCC = 100 V, RC = 6.25 Ω)

ÎÎÎÎÎ

ton

ÎÎÎÎÎ

ÎÎÎÎ

0.8

ÎÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 16 A, IB1 = IB2 = 3.2 A,

VCC = 100 V, RC = 6.25 Ω)

ÎÎÎÎÎ

ÎÎÎÎ

2.5

ÎÎÎÎ

ÎÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎ

VCC = 100 V, RC = 6.25 Ω)

ÎÎÎÎÎ

ÎÎÎÎ

0.4

ÎÎÎÎ

1Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

BUV23

Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (A)

Figure 2. Active Region Safe Operating Area

1VCE, COLLECTOR–EMITTER VOLTAGE (V)

10 325

0.1

100

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 2 is based on TC = 25

C; TJ(pk) is

variable depending on power level. Second breakdown

limitations do not derate the same as thermal limitations.

At high case temperatures. thermal limitations will reduce

the power that can handled to values less than the limitations

imposed by second breakdown.

Figure 3. “On” Voltages Figure 4. DC Current Gain

100

IC, COLLECTOR CURRENT (A)

1 10

VCE = 5 V

Figure 5. Resistive Switching Performance

3.0

0 4 8 12 20

VCE = 100 V

IC/IB1 = 5

IB1 = IB2

t, TIME ( s)

2.0

1.0 tS

0.4

0.3

0.2

ton

2.0

IC, COLLECTOR CURRENT (A)

1 10

1.6 IC/IB = 5

0.8

1.2

0.4

Figure 6. Switching Times Test Circuit

V, VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

VBE(sat)

VCE(sat)

VCC

IB2

IB1 RB

RC – RB: Non inductive resistances

VCC = 100 V

RC= 6

Ω

RB= 2.2

Ω

5600

BUV23

4 Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 197A–05

TO–204AE (TO–3)

ISSUE J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.530 REF 38.86 REF

B0.990 1.050 25.15 26.67

C0.250 0.335 6.35 8.51

D0.057 0.063 1.45 1.60

E0.060 0.070 1.53 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N0.760 0.830 19.31 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.30 (0.012) Y M

0.25 (0.010) T

–Q–

–Y–

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BUV23/D

*BUV23/D*

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