This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any
responsibility for use of circuits described. No patent licenses are implied.
Rev 1.0 / June 2007 1
512Mb DDR SDRAM
HY5DU12822DF(P)-xI
HY5DU121622DF(P)-xI
Rev 1.0 / June 2007 2
1
HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
Revision History
Revision No. History Draft Date Remark
1.0 Final Version Release June 2007
Rev 1.0 / June 2007 3
1
HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
DESCRIPTION
The HY5DU12822DF(P)-xI and HY5DU121622DF(P)-xI are a 536,870,912-bit CMOS Double Data Rate(DDR) Synchro-
nous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth.
This Hynix 512Mb DDR SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the
clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the /CK), Data,
Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are inter-
nally pipelined and 2-bit prefetched to achieve very high bandwidth. All input and output voltage levels are compatible
with SSTL_2.
FEATURES
•V
DD
, V
DDQ
= 2.3V
min
~ 2.7V
max
(Typical 2.5V Operation +/- 0.2V for DDR266, 333)
•V
DD
, V
DDQ
= 2.4V
min
~ 2.7V
max
(Typical 2.6V Operation +0.1/- 0.2V for DDR400,
400Mbps/pin product and 500Mbps/pin product )
• All inputs and outputs are compatible with SSTL_2
interface
• Fully differential clock inputs (CK, /CK) operation
• Double data rate interface
• Source synchronous - data transaction aligned to
bidirectional data strobe (DQS)
• x16 device has two bytewide data strobes (UDQS,
LDQS) per each x8 I/O
• Data outputs on DQS edges when read (edged DQ)
Data inputs on DQS centers when write (centered
DQ)
• On chip DLL align DQ and DQS transition with CK
transition
• DM mask write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data, data
strobes and data masks latched on the rising edges
of the clock
• Programmable CAS latency 2/2.5 (DDR266, 333)
and 3/4 (DDR400, 400Mbps/pin product and
500Mbps/pin product) supported
• Programmable burst length 2/4/8 with both sequen-
tial and interleave mode
• Internal four bank operations with single pulsed
/RAS
• Auto refresh and self refresh supported
•t
RAS
lock out function supported
• 8192 refresh cycles/64ms
•60 Ball FBGA Package Type
• Lead free (*ROHS Compliant)
OPERATING FREQUENCY
Grade Clock Rate Remark
-D43 200MHz@CL3 DDR400B (3-3-3)
- J 133MHz@CL2 166MHz @CL2.5
& @CL3
DDR333 (2.5-3-3)
DDR333 (3-3-3)
- K 133MHz@CL2 133MHz@CL2.5 DDR266A (2-3-3)
- H 100MHz@CL2 133MHz@CL2.5 DDR266B (2.5-3-3)
ORDERING INFORMATION
*X means speed grade
*ROHS (Restriction Of Hazardous Substance)
Part No. Configuration Package
HY5DU12822DF(P)-xI* 64M x 8 60ball
FBGA
(Lead free)
HY5DU121622DFP-xI* 32M x 16
Rev 1.0 / June 2007 4
1
HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
ROW AND COLUMN ADDRESS TABLE
ITEMS 64Mx8 32Mx16
Organization 16M x 8 x 4banks 8M x 16 x 4banks
Row Address A0 - A12 A0 - A12
Column Address A0-A9, A11 A0-A9
Bank Address BA0, BA1 BA0, BA1
Auto Precharge Flag A10 A10
Refresh 8K 8K
VSSQ
NC
NC
NC
NC
VREF
DQ7
VDDQ
VSSQ
VDDQ
VSSQ
VSS
VSS
DQ6
DQ5
DQ4
DQS
DM
CK
A12
A11
A8
A6
A4
CK
CKE
A9
A7
A5
VSS
WE
RAS
BA1
A0
A2
VDD
VDD
DQ1
DQ2
DQ3
NC
NC
VDDQ
NC
NC
NC
NC
NC
DQ0
VSSQ
VDDQ
VSSQ
VDDQ
VDD
CAS
CS
BA0
A10/AP
A1
A3
1 2 3 7 98
A
B
C
D
E
F
G
H
J
K
L
M
x8 Device Ball Pattern
(X8)
VSSQ
DQ14
DQ12
DQ10
DQ8
VREF
DQ15
VDDQ
VSSQ
VDDQ
VSSQ
VSS
VSS
DQ13
DQ11
DQ9
UDQS
UDM
CK
A12
A11
A8
A6
A4
CK
CKE
A9
A7
A5
VSS
WE
RAS
BA1
A0
A2
VDD
VDD
DQ2
DQ4
DQ6
LDQS
LDM
VDDQ
DQ1
DQ3
DQ5
DQ7
NC
DQ0
VSSQ
VDDQ
VSSQ
VDDQ
VDD
CAS
CS
BA0
A10/AP
A1
A3
1 2 3 7 98
A
B
C
D
E
F
G
H
J
K
L
M
(X16)
x16 Device Ball Pattern
A
B
C
D
E
F
G
H
J
K
L
M
123456789
0.8mm
12.0mm
: B all Existing
: Depopulated Ball
[ For Reference Only ]
Top View (See the balls through the Package)
BGA Package Ball Pattern
Top View
10.0mm
1.0mm
Rev 1.0 / June 2007 5
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
PIN DESCRIPTION
PIN TYPE DESCRIPTION
CK, /CK Input
Clock: CK and /CK are differential clock inputs. All address and control input
signals are sampled on the crossing of the positive edge of CK and negative
edge of /CK. Output (read) data is referenced to the crossings of CK and /CK
(both directions of crossing).
CKE Input
Clock Enable: CKE HIGH activates, and CKE LOW deactivates internal clock sig-
nals, and device input buffers and output drivers. Taking CKE LOW provides
PRECHARGE POWER DOWN and SELF REFRESH operation (all banks idle), or
ACTIVE POWER DOWN (row ACTIVE in any bank). CKE is synchronous for
POWER DOWN entry and exit, and for SELF REFRESH entry. CKE is asynchro-
nous for SELF REFRESH exit, and for output disable. CKE must be maintained
high throughout READ and WRITE accesses. Input buffers, excluding CK, /CK
and CKE are disabled during POWER DOWN. Input buffers, excluding CKE are
disabled during SELF REFRESH. CKE is an SSTL_2 input, but will detect an LVC-
MOS LOW level after VDD is applied.
/CS Input
Chip Select: Enables or disables all inputs except CK, /CK, CKE, DQS and DM.
All commands are masked when CS is registered high. CS provides for external
bank selection on systems with multiple banks. CS is considered part of the
command code.
BA0, BA1 Input Bank Address Inputs: BA0 and BA1 define to which bank an ACTIVE, Read,
Write or PRECHARGE command is being applied.
A0 ~ A12 Input
Address Inputs: Provide the row address for ACTIVE commands, and the col-
umn address and AUTO PRECHARGE bit for READ/WRITE commands, to select
one location out of the memory array in the respective bank. A10 is sampled
during a Precharge command to determine whether the PRECHARGE applies to
one bank (A10 LOW) or all banks (A10 HIGH). If only one bank is to be pre-
charged, the bank is selected by BA0, BA1. The address inputs also provide the
op code during a MODE REGISTER SET command. BA0 and BA1 define which
mode register is loaded during the MODE REGISTER SET command (MRS or
EMRS).
/RAS, /CAS, /
WE Input Command Inputs: /RAS, /CAS and /WE (along with /CS) define the command
being entered.
DM
(LDM,UDM) Input
Input Data Mask: DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH along with that input data during a WRITE
access. DM is sampled on both edges of DQS. Although DM pins are input only,
the DM loading matches the DQ and DQS loading. For the x16, LDM corre-
sponds to the data on DQ0-Q7; UDM corresponds to the data on DQ8-Q15.
DQS
(LDQS,UDQS) I/O
Data Strobe: Output with read data, input with write data. Edge aligned with
read data, centered in write data. Used to capture write data. For the x16,
LDQS corresponds to the data on DQ0-Q7; UDQS corresponds to the data on
DQ8-Q15.
DQ I/O Data input / output pin: Data bus
VDD/VSS Supply Power supply for internal circuits and input buffers.
VDDQ/VSSQ Supply Power supply for output buffers for noise immunity.
VREF Supply Reference voltage for inputs for SSTL interface.
NC NC No connection.
Rev 1.0 / June 2007 6
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
FUNCTIONAL BLOCK DIAGRAM (64Mx8)
4Banks x 16Mbit x 8 I/O Double Data Rate Synchronous DRAM
Sense AMP
Sense AMP
Sense AMP
Mode
Register
Command
Decoder
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
DM
Bank
Control
Mode
Register
Row
Decoder
16Mx8 BANK 0
16Mx8 BANK 1
16Mx8 BANK 2
16Mx8 BANK 3
Memory
Cell
Array
Sense AMP
Column
Decoder
Address
Buffer
A0
A1
A
max
BA0
BA1
Column Address
Counter
8
Output Buffer
DQ0
DQ7
Input Buffer
DS
16
2-bit Prefetch Unit
Write Data Register
2-bit Prefetch Unit 8
16
Data Strobe
Transmitter
Data Strobe
Receiver
DQS
DS
DLL
Block
CLK,
/CLK
CLK_DLL
Mode
Register
Rev 1.0 / June 2007 7
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
FUNCTIONAL BLOCK DIAGRAM (32Mx16)
4Banks x 8Mbit x 16 I/O Double Data Rate Synchronous DRAM
Sense AMP
Sense AMP
Sense AMP
Mode
Register
Command
Decoder
CLK
/CLK
CKE
/CS
/RAS
/CAS
/WE
LDM,
UDM
Bank
Control
Mode
Register
Row
Decoder
8Mx16 BANK 0
8Mx16 BANK 1
8Mx16 BANK 2
8Mx16 BANK 3
Memory
Cell
Array
Sense AMP
Column
Decoder
Address
Buffer
A0
A1
A
max
BA0
BA1
Column Address
Counter
16
Output Buffer
DQ0
DQ15
Input Buffer
LDQS,
UDQS
32
2-bit Prefetch Unit
Write Data Register
2-bit Prefetch Unit 16
32
Data Strobe
Transmitter
Data Strobe
Receiver
UDQS,
LDQS
UDQS,
LDQS
DLL
Block
CLK,
/CLK
CLK_DLL
Mode
Register
Rev 1.0 / June 2007 8
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
SIMPLIFIED COMMAND TRUTH TABLE
Command CKEn-1 CKEn CS RAS CAS WE ADDR A10
/AP BA Note
Extended Mode Register
Set H X LLLL OP code 1,2
Mode Register Set H X L L L L OP code 1,2
Device Deselect
HX
HXXX
X1
No Operation L H H H
Bank Active H X L L H H RA V 1
Read
H X LHLHCA
L
V
1
Read with Autoprecharge H 1,3
Write
HXLHLLCA
L
V
1
Write with Autoprecharge H 1,4
Precharge All Banks
HXLLHLX
HX1,5
Precharge selected Bank LV1
Read Burst Stop H X L H H L X 1
Auto Refresh H H L L L H X 1
Self Refresh
Entry H L L L L H
X
1
Exit L H
HXXX
1
LHHH
Precharge
Power Down
Mode
Entry H L
HXXX
X
1
LHHH 1
Exit L H
HXXX 1
LHHH 1
Active Power
Down Mode
Entry H L
HXXX
X
1
LVVV 1
Exit L H X 1
( H=Logic High Level, L=Logic Low Level, X=Don’t Care, V=Valid Data Input, OP Code=Operand Code, NOP=No Operation )
Rev 1.0 / June 2007 9
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
WRITE MASK TRUTH TABLE
Function CKEn-1 CKEn /CS, /RAS,
/CAS, /WE DM ADD
R
A10/
AP BA Note
Data Write H X X L X 1,2
Data-In Mask H X X H X 1,2
Note :
1. Write Mask command masks burst write data with reference to LDQS/UDQS(Data Strobes) and it is not related with read data.
In case of x16 data I/O, LDM and UDM control lower byte(DQ0~7) and Upper byte(DQ8~15) respectively.
2. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of
VIHmin ~ VILmax
Note :
1. UDM, LDM states are Don’t Care. Refer to below Write Mask Truth Table.(note 6)
2. OP Code(Operand Code) consists of A0~A11 and BA0~BA1 used for Mode Register setting during Extended MRS or MRS. Before
entering Mode Register Set mode, all banks must be in a precharge state and MRS command can be issued after tRP period from
Prechagre command.
3. If a Read with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented
to activate bank until CK(n+BL/2+tRP).
4. If a Write with Auto-precharge command is detected by memory component in CK(n), then there will be no command presented
to activate bank until CK(n+BL/2+1+tDPL+tRP). Last Data-In to Prechage delay(tDPL) which is also called Write Recovery
Time(tWR) is needed to guarantee that the last data have been completely written.
5. If A10/AP is High when Precharge command being issued, BA0/BA1 are ignored and all banks are selected to be precharged.
6. In here, Don’t Care means logical value only, it doesn’t mean ’Don’t care for DC level of each signals’. DC level should be out of
VIHmin ~ VILmax
Rev 1.0 / June 2007 10
1
HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
SIMPLIFIED STATE DIAGRAM
IDLE
BANK
ACTIVE
SELF
REFRESH
Mode
REGISTER
SET
IDLE
POWER
DOWN ACTIVE
POWER
DOWN
AUTO
REFRESH
WRITE
WITH
AUTOPRE
CHARGE
READ
WITH
AUTOPRE
CHARGE
BANK
ACTIVE
POWER-UP
POWER APPLIED
WRITE READ
(E)MRS SREF
SREX
AREF
CLE HIGH
CKE LOW
ACTIVE
CLE HIGH
CKE LOW
Write
READ
READAP
WRITEAP
PRE(PALL)
WRITEAP
WRITEAP
WRITE
READ
PRE(PALL)
PRE(PALL)
Command Input
Automatic Sequence
Rev 1.0 / June 2007 11
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
POWER-UP SEQUENCE AND DEVICE INITIALIZATION
DDR SDRAMs must be powered up and initialized in a predefined manner. Operational procedures other than those
specified may result in undefined operation. Power must first be applied to V
DD
, then to V
DDQ
, and finally to VREF
(and to the system VTT). VTT must be applied after V
DDQ
to avoid device latch-up, which may cause permanent dam-
age to the device. VREF can be applied anytime after V
DDQ
, but is expected to be nominally coincident with VTT.
Except for CKE, inputs are not recognized as valid until after VREF is applied. CKE is an SSTL_2 input, but will detect an
LVCMOS LOW level after V
DD
is applied. Maintaining an LVCMOS LOW level on CKE during power-up is required to
guarantee that the DQ and DQS outputs will be in the High-Z state, where they will remain until driven in normal oper-
ation (by a read access). After all power supply and reference voltages are stable, and the clock is stable, the DDR
SDRAM requires a 200us delay prior to applying an executable command.
Once the 200us delay has been satisfied, a DESELECT or NOP command should be applied, and CKE should be
brought HIGH. Following the NOP command, a PRECHARGE ALL command should be applied. Next a EXTENDED
MODE REGISTER SET command should be issued for the Extended Mode Register, to enable the DLL, then a MODE
REGISTER SET command should be issued for the Mode Register, to reset the DLL, and to program the operating
parameters. After the DLL reset, tXSRD(DLL locking time) should be satisfied for read command. After the Mode Regis-
ter set command, a PRECHARGE ALL command should be applied, placing the device in the all banks idle state.
Once in the idle state, two AUTO REFRESH cycles must be performed. Additionally, a MODE REGISTER SET command
for the Mode Register, with the reset DLL bit deactivated low (i.e. to program operating parameters without resetting
the DLL) must be performed. Following these cycles, the DDR SDRAM is ready for normal operation.
1. Apply power - V
DD
, V
DDQ
, VTT, VREF in the following power up sequencing and attempt to maintain CKE at LVC-
MOS low state. (All the other input pins may be undefined.)
•V
DD
and V
DDQ
are driven from a single power converter output.
• VTT is limited to 1.44V (reflecting V
DDQ
(max)/2 + 50mV VREF variation + 40mV VTT variation.
•V
REF tracks V
DDQ
/2.
• If the above criteria cannot be met by the system design, then the following sequencing and voltage relation-
ship must be adhered to during power up.
2. Start clock and maintain stable clock for a minimum of 200usec.
3. After stable power and clock, apply NOP condition and take CKE high.
4. Issue Extended Mode Register Set (EMRS) to enable DLL.
5. Issue Mode Register Set (MRS) to reset DLL and set device to idle state with bit A8=high. (An additional 200
cycles(tXSRD) of clock are required for locking DLL)
6. Issue Precharge commands for all banks of the device.
7. Issue 2 or more Auto Refresh commands.
8. Issue a Mode Register Set command to initialize the mode register with bit A8 = Low
Voltage description Sequencing Voltage relationship to avoid latch-up
V
DDQ
After or with V
DD
< V
DD
+ 0.3V
VTT After or with V
DDQ
< V
DDQ
+ 0.3V
VREF After or with V
DDQ
< V
DDQ
+ 0.3V
Rev 1.0 / June 2007 12
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
Power-Up Sequence
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
CODE
NOP
PRE
MRS
EMRS
PRE
NOP
MRS
AREF
ACT
RD
VDD
VDDQ
VTT
VREF
/CLK
CLK
CKE
CMD
DM
ADDR
A10
BA0, BA1
DQS
DQ'S
LVCMOS Low Level
tIS tIH
tVTD
T=200usec tRP tMRD tRP tRFC tMRD
tXSRD*
READ
Non-Read
Command
Power UP
VDD and CK stable Precharge All EMRS Set MRS Set
Reset DLL
(with A8=H)
Precharge All 2 or more
Auto Refresh
MRS Set
(with A8=L)
* 200 cycle(tXSRD) of CK are required (for DLL locking) before Read Command
tMRD
Rev 1.0 / June 2007 13
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
MODE REGISTER SET (MRS)
The mode register is used to store the various operating modes such as /CAS latency, addressing mode, burst length,
burst type, test mode, DLL reset. The mode register is programed via MRS command. This command is issued by the
low signals of /RAS, /CAS, /CS, /WE and BA0. This command can be issued only when all banks are in idle state and
CKE must be high at least one cycle before the Mode Register Set Command can be issued. Two cycles are required to
write the data in mode register. During the MRS cycle, any command cannot be issued. Once mode register field is
determined, the information will be held until reset by another MRS command.
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 0 Operating Mode CAS Latency BT Burst Length
BA0 MRS Type
0MRS
1EMRS
A12~A9 A8 A7 A6~A0 Operating Mode
0 0 0 Valid Normal Operation
0 1 0 Valid Normal Operation/ Reset DLL
0 0 1 VS Vendor specific Test Mode
- - - - All other states reserved
A6 A5 A4 CAS Latency
00 0 Reserved
00 1 Reserved
01 0 2
01 1 3
10 0 4
10 1 1.5
11 0 2.5
11 1 Reserved
A3 Burst Type
0Sequential
1Interleave
A2 A1 A0
Burst Length
Sequential Interleave
0 0 0 Reserved Reserved
001 2 2
010 4 4
011 8 8
1 0 0 Reserved Reserved
1 0 1 Reserved Reserved
1 1 0 Reserved Reserved
1 1 1 Reserved Reserved
Rev 1.0 / June 2007 14
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
BURST DEFINITION
BURST LENGTH & TYPE
Read and write accesses to the DDR SDRAM are burst oriented, with the burst length being programmable. The burst
length determines the maximum number of column locations that can be accessed for a given Read or Write com-
mand. Burst lengths of 2, 4 or 8 locations are available for both the sequential and the interleaved burst types.
Reserved states should not be used, as unknown operation or incompatibility with future versions may result.
When a Read or Write command is issued, a block of columns equal to the burst length is effectively selected. All
accesses for that burst take place within this block, meaning that the burst wraps within the block if a boundary is
reached. The block is uniquely selected by A1-Ai when the burst length is set to two, by A2 -Ai when the burst length
is set to four and by A3 -Ai when the burst length is set to eight (where Ai is the most significant column address bit
for a given configuration). The remaining (least significant) address bit(s) is (are) used to select the starting location
within the block. The programmed burst length applies to both Read and Write bursts.
Accesses within a given burst may be programmed to be either sequential or interleaved; this is referred to as the
burst type and is selected via bit A3. The ordering of accesses within a burst is determined by the burst length, the
burst type and the starting column address, as shown in Burst Definition Table
Burst Length Starting Address
(A2,A1,A0)
Sequential Interleave
2
XX0 0, 1 0, 1
XX1 1, 0 1, 0
4
X00 0, 1, 2, 3 0, 1, 2, 3
X01 1, 2, 3, 0 1, 0, 3, 2
X10 2, 3, 0, 1 2, 3, 0, 1
X11 3, 0, 1, 2 3, 2, 1, 0
8
000 0, 1, 2, 3, 4, 5, 6, 7 0, 1, 2, 3, 4, 5, 6, 7
001 1, 2, 3, 4, 5, 6, 7, 0 1, 0, 3, 2, 5, 4, 7, 6
010 2, 3, 4, 5, 6, 7, 0, 1 2, 3, 0, 1, 6, 7, 4, 5
011 3, 4, 5, 6, 7, 0, 1, 2 3, 2, 1, 0, 7, 6, 5, 4
100 4, 5, 6, 7, 0, 1, 2, 3 4, 5, 6, 7, 0, 1, 2, 3
101 5, 6, 7, 0, 1, 2, 3, 4 5, 4, 7, 6, 1, 0, 3, 2
110 6, 7, 0, 1, 2, 3, 4, 5 6, 7, 4, 5, 2, 3, 0, 1
111 7, 0, 1, 2, 3, 4, 5, 6 7, 6, 5, 4, 3, 2, 1, 0
Rev 1.0 / June 2007 15
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
CAS LATENCY
The Read latency or CAS latency is the delay in clock cycles between the registration of a Read command and the
availability of the first burst of output data. The latency can be programmed 2 or 2.5 clocks for DDR266/333 and 3
clocks for DDR400 product.
If a Read command is registered at clock edge n, and the latency is m clocks, the data is available nominally coincident
with clock edge n + m.
Reserved states should not be used as unknown operation or incompatibility with future versions may result.
DLL RESET
The DLL must be enabled for normal operation. DLL enable is required during power up initialization, and upon return-
ing to normal operation after having disabled the DLL for the purpose of debug or evaluation. The DLL is automatically
disabled when entering self refresh operation and is automatically re-enabled upon exit of self refresh operation. Any
time the DLL is enabled, 200 clock cycles must occur to allow time for the internal clock to lock to the externally
applied clock before an any command can be issued.
OUTPUT DRIVER IMPEDANCE CONTROL
The normal drive strength for all outputs is specified to be SSTL_2, Class II. Hynix also supports a half strength driver
option, intended for lighter load and/or point-to-point environments. Selection of the half strength driver option will
reduce the output drive strength by 50% of that of the full strength driver. I-V curves for both the full strength driver
and the half strength driver are included in this document.
Rev 1.0 / June 2007 16
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
EXTENDED MODE REGISTER SET (EMRS)
The Extended Mode Register controls functions beyond those controlled by the Mode Register; these additional func-
tions include DLL enable/disable, output driver strength selection(optional). These functions are controlled via the bits
shown below. The Extended Mode Register is programmed via the Mode Register Set command (BA0=1 and BA1=0)
and will retain the stored information until it is programmed again or the device loses power.
The Extended Mode Register must be loaded when all banks are idle and no bursts are in progress, and the controller
must wait the specified time before initiating any subsequent operation. Violating either of these requirements will result
in unspecified operation.
BA1 BA0 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0
0 1 Operating Mode 0* DS DLL
BA0 MRS Type
0MRS
1EMRS
An~A3 A2~A0 Operating Mode
0 Valid Normal Operation
_ _ All other states reserved
A0 DLL enable
0Enable
1 Disable
A1 Output Driver
Impedance Control
0 Full Strength Driver
1Half Strength Driver
* This part do not support/QFC function, A2 must be programmed to Zero.
Rev 1.0 / June 2007 17
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
ABSOLUTE MAXIMUM RATINGS
Note: Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITIONS (TA=-40 to 85 oC, Voltage referenced to VSS = 0V)
Note:
1. V
DDQ
must not exceed the level of VDD.
2. V
IL
(min) is acceptable -1.5V AC pulse width with < 5ns of duration.
3. V
REF
is expected to be equal to 0.5*VDDQ of the transmitting device, and to track variations in the dc level of the same.
Peak to peak noise on V
REF
may not exceed ±2% of the DC value.
4. V
ID
is the magnitude of the difference between the input level on CK and the input level on /CK.
Parameter Symbol Rating Unit
Operating Temperature (Ambient) T
A
-40 ~ 85 oC
Storage Temperature T
STG
-55 ~ 150 oC
Voltage on V
DD
relative to V
SS
V
DD
-1.0 ~ 3.6 V
Voltage on V
DDQ
relative to V
SS
V
DDQ
-1.0 ~ 3.6 V
Voltage on inputs relative to V
SS
V
INPUT
-1.0 ~ 3.6 V
Voltage on I/O pins relative to V
SS
V
IO
-0.5 ~3.6 V
Output Short Circuit Current I
OS
50 mA
Soldering Temperature ⋅ Time T
SOLDER
260 ⋅ 10 oC ⋅ Sec
Parameter Symbol Min Typ. Max Unit
Power Supply Voltage (DDR200, 266, 333) V
DD
2.3 2.5 2.7 V
Power Supply Voltage (DDR200, 266, 333)1V
DDQ
2.3 2.5 2.7 V
Power Supply Voltage (DDR400, 400Mbps/pin or
500Mbps/pin product) V
DD
2.4 2.6 2.7 V
Power Supply Voltage (DDR400, 400Mbps/pin or
500Mbps/pin product)1V
DDQ
2.4 2.6 2.7 V
Input High Voltage V
IH
V
REF
+ 0.15 - V
DDQ
+ 0.3 V
Input Low Voltage2V
IL
-0.3 - V
REF
- 0.15 V
Termination Voltage V
TT
V
REF
- 0.04 V
REF
V
REF
+ 0.04 V
Reference Voltage3V
REF
0.49*VDDQ 0.5*VDDQ 0.51*VDDQ V
Input Voltage Level, CK and CK inputs V
IN
(DC) -0.3 - VDDQ+0.3 V
Input Differential Voltage, CK and CK inputs4V
ID
(DC) 0.36 - VDDQ+0.6 V
V-I Matching: Pullup to Pulldown Current Ratio5V
I
(RATIO) 0.71 - 1.4 -
Input Leakage Current6I
LI
-2 - 2 uA
Output Leakage Current7I
LO
-5 - 5 uA
Normal Strength
Output Driver
(V
OUT
=V
TT
±
0.84)
Output High Current
(min V
DDQ
, min V
REF
, min
V
TT
)
I
OH
-16.8 - - mA
Output Low Current
(min V
DDQ
, max V
REF
, max
V
TT
)
I
OL
16.8 - - mA
Half Strength
Output Driver
(V
OUT
=V
TT
±
0.68)
Output High Current
(min V
DDQ
, min V
REF
, min
V
TT
)
I
OH
-13.6 - - mA
Output Low Current
(min V
DDQ
, max V
REF
, max
V
TT
)
I
OL
13.6 - - mA
Rev 1.0 / June 2007 18
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
5. The ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire temper-
ature and voltage range, for device drain to source voltages from 0.25V to 1.0V. For a given output, it represents the maximum dif-
ference between pullup and pulldown drivers due to process variation. The full variation in the ratio of the maximum to minimum
pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0.
6. V
IN
=0 to V
DD
, All other pins are not tested under V
IN
=0V.
7. DQs are disabled, V
OUT
=0 to V
DDQ
IDD SPECIFICATION AND CONDITIONS (TA=-40 to 80 oC, Voltage referenced to VSS = 0V)
Test Conditions
Test Condition Symbol
Operating Current:
One bank; Active - Precharge; t
RC
=t
RC
(min); t
CK
=t
CK
(min); DQ,DM and DQS inputs changing twice
per clock cycle; address and control inputs changing once per clock cycle
I
DD0
Operating Current:
One bank; Active - Read - Precharge;
Burst Length=2; t
RC
=t
RC
(min); t
CK
=t
CK
(min); address and control inputs changing once per clock
cycle
I
DD1
Precharge Power Down Standby Current:
All banks idle; Power down mode; CKE=Low, t
CK
=t
CK
(min) I
DD2P
Idle Standby Current:
/CS=High, All banks idle; t
CK
=t
CK
(min);
CKE=High; address and control inputs changing once per clock cycle.
V
IN
=V
REF
for DQ, DQS and DM
I
DD2F
Idle Quiet Standby Current:
/CS>=Vih(min); All banks idle; CKE>=Vih(min); Addresses and other control inputs stable, Vin=Vref
for DQ, DQS and DM
I
DD2Q
Active Power Down Standby Current:
One bank active; Power down mode; CKE=Low, t
CK
=t
CK
(min) I
DD3P
Active Standby Current:
/CS=HIGH; CKE=HIGH; One bank; Active-Precharge; t
RC
=t
RAS
(max); t
CK
=t
CK
(min);
DQ, DM and DQS inputs changing twice per clock cycle; Address and other control inputs changing
once per clock cycle
I
DD3N
Operating Current:
Burst=2; Reads; Continuous burst; One bank active; Address and control inputs changing once per
clock cycle; t
CK
=t
CK
(min); I
OUT
=0mA
I
DD4R
Operating Current:
Burst=2; Writes; Continuous burst; One bank active; Address and control inputs changing once per
clock cycle; t
CK
=t
CK
(min); DQ, DM and DQS inputs changing twice per clock cycle
I
DD4W
Auto Refresh Current:
t
RC
=t
RFC
(min) - 8*t
CK
for DDR200 at 100Mhz, 10*t
CK
for DDR266A & DDR266B at 133Mhz;
distributed refresh
t
RC
=t
RFC
(min) - 14*t
CK
for DDR400 at 200Mhz
I
DD5
Self Refresh Current:
CKE =< 0.2V; External clock on; t
CK
=t
CK
(min) I
DD6
Operating Current - Four Bank Operation:
Four bank interleaving with BL=4, Refer to the following page for detailed test condition I
DD7
Rev 1.0 / June 2007 19
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
DETAILED TEST CONDITIONS FOR DDR SDRAM IDD1 & IDD7
IDD1: Operating current: One bank operation
1. Typical Case: VDD = 2.5V, T=25 oC for DDR200, 266, 333; VDD = 2.6V, T=25 oC for DDR400
2. Worst Case: VDD = 2.7V, T= 0 oC
3. Only one bank is accessed with tRC(min), Burst Mode, Address and Control inputs on NOP edge are
changing once per clock cycle. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2): tCK = 10ns, CL2, BL=2, tRCD = 2*tCK, tRC = 10*tCK, tRAS = 5*tCK
Read: A0 N R0 N N P0 N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5): tCK = 7.5ns, CL=2.5, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266A (133Mhz, CL=2): tCK = 7.5ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 9*tCK, tRAS = 5*tCK
Read: A0 N N R0 N P0 N N N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR333(166Mhz, CL=2.5): tCK = 6ns, CL=2, BL=4, tRCD = 3*tCK, tRC = 10*tCK, tRAS = 7*tCK
Read: A0 N N R0 N N N P0 N N A0 N - repeat the same timing with random address changing
50% of data changing at every burst
- DDR400(200Mhz, CL=3): tCK = 5ns, CL=3, BL=4, tRCD = 3*tCK, tRC = 11*tCK, tRAS = 8*tCK
Read: A0 N N R0 N N N N P0 N N - repeat the same timing with random address changing
50% of data changing at every burst
Legend: A=Activate, R=Read, W=Write, P=Precharge, N=NOP
IDD7: Operating current: Four bank operation
1. Typical Case: VDD = 2.5V, T=25 oC for DDR200, 266, 333; VDD = 2.6V, T=25 oC for DDR400
2. Worst Case: VDD = 2.7V, T= 0 oC
3. Four banks are being interleaved with tRC(min), Burst Mode, Address and Control inputs on NOP edge are not
changing. lout = 0mA
4. Timing patterns
- DDR200(100Mhz, CL=2): tCK = 10ns, CL2, BL=4, tRRD = 2*tCK, tRCD= 3*tCK, Read with Autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 A0 R3 A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266B(133Mhz, CL=2.5): tCK = 7.5ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK Read with autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR266A (133Mhz, CL=2): tCK = 7.5ns, CL2=2, BL=4, tRRD = 2*tCK, tRCD = 3*tCK
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR333(166Mhz, CL=2.5): tCK = 6ns, CL=2.5, BL=4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
- DDR400(200Mhz, CL=3): tCK = 5ns, CL = 2, BL = 4, tRRD = 2*tCK, tRCD = 3*tCK, Read with autoprecharge
Read: A0 N A1 R0 A2 R1 A3 R2 N R3 A0 N A1 R0 - repeat the same timing with random address changing
50% of data changing at every burst
Legend: A=Activate, R=Read, W=Write, P=Precharge, N=NOP
Rev 1.0 / June 2007 20
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
IDD Specification
64Mx8
32Mx16
Parameter Symbol Speed Unit
DDR400B DDR333 DDR266A DDR266B DDR200
Operating Current IDD0 130 120 100 mA
Operating Current IDD1 170 150 120 mA
Precharge Power Down Standby
Current IDD2P 10 mA
Idle Standby Current IDD2F 35 mA
Idle Quiet Standby Current IDD2Q 30 mA
Active Power Down Standby Current IDD3P 45 mA
Active Standby Current IDD3N 60 mA
Operating Current IDD4R 210 190 170
mAOperating Current IDD4W 230 210 180
Auto Refresh Current IDD5 260 240 220
Self Refresh Current Normal IDD6 5mA
Low Power 3mA
Operating Current - Four Bank
Operation IDD7 360 350 340 mA
Parameter Symbol Speed Unit
DDR400B DDR333 DDR266A DDR266B DDR200
Operating Current IDD0 130 120 100 mA
Operating Current IDD1 170 150 120 mA
Precharge Power Down Standby
Current IDD2P 10 mA
Idle Standby Current IDD2F 35 mA
Idle Quiet Standby Current IDD2Q 30 mA
Active Power Down Standby Current IDD3P 45 mA
Active Standby Current IDD3N 60 mA
Operating Current IDD4R 210 190 170
mAOperating Current IDD4W 230 210 180
Auto Refresh Current IDD5 260 240 220
Self Refresh Current Normal IDD6 5mA
Low Power 3mA
Operating Current - Four Bank
Operation IDD7 360 350 340 mA
Rev 1.0 / June 2007 21
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
AC OPERATING CONDITIONS (TA=-40 to 85 oC, Voltage referenced to VSS = 0V)
Note:
1. V
ID
is the magnitude of the difference between the input level on CK and the input on /CK.
2. The value of V
IX
is expected to equal 0.5*V
DDQ
of the transmitting device and must track variations in the DC level of the same.
*For more information about AC Overshoot/Undershoot Specifications, refer to “Device Operation” section in hynix website.
AC OPERATING TEST CONDITIONS (TA=-40 to 85oC, Voltage referenced to VSS = 0V)
Parameter Symbol Min Max Unit
Input High (Logic 1) Voltage, DQ, DQS and DM signals V
IH
(AC) V
REF
+ 0.31 - V
Input Low (Logic 0) Voltage, DQ, DQS and DM signals V
IL
(AC) - V
REF
- 0.31 V
Input Differential Voltage, CK and /CK inputs1V
ID
(AC) 0.7 V
DDQ
+ 0.6 V
Input Crossing Point Voltage, CK and /CK inputs2V
IX
(AC) 0.5*V
DDQ
-0.2 0.5*V
DDQ
+0.2 V
Parameter Value Unit
Reference Voltage V
DDQ
x 0.5 V
Termination Voltage V
DDQ
x 0.5 V
AC Input High Level Voltage (VIH, min) V
REF
+ 0.31 V
AC Input Low Level Voltage (VIL, max) V
REF
- 0.31 V
Input Timing Measurement Reference Level Voltage V
REF
V
Output Timing Measurement Reference Level Voltage V
TT
V
Input Signal maximum peak swing 1.5 V
Input minimum Signal Slew Rate 1 V/ns
Termination Resistor (RT) 50 Ω
Series Resistor (RS) 25 W
Output Load Capacitance for Access Time Measurement (CL) 30 pF
Rev 1.0 / June 2007 22
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
AC CHARACTERISTICS (note: 1 - 9 / AC operating conditions unless otherwise noted)
Parameter Symbol
DDR400B DDR333 DDR266A DDR266B DDR200
UNIT
Min Max Min Max Min Max Min Max Min Max
Row Cycle Time tRC 55 - 60 - 65 - 65 - 70 - ns
Auto Refresh Row
Cycle Time tRFC 70 - 72 - 75 - 75 - 80 - ns
Row Active Time tRAS 40 70K 42 70K 45 120K 45 120K 50 120K ns
Active to Read with
Auto Precharge Delay tRAP tRCD or
tRASmin -tRCD or
tRASmin -tRCD or
tRASmin -tRCD or
tRASmin -tRCD or
tRASmin -ns
Row Address to
Column Address Delay tRCD 15 - 18 - 20 - 20 - 20 - ns
Row Active to Row
Active Delay tRRD 10 - 12 - 15 - 15 - 15 - ns
Column Address to
Column Address Delay tCCD1-1-1-1-1-tCK
Row Precharge Time tRP 15 - 18 - 20 - 20 - 20 - ns
Write Recovery Time tWR 15 - 15 - 15 - 15 - 15 - ns
Internal Write to Read
Command Delay tWTR2-1-1-1-1-tCK
Auto Precharge Write
Recovery + Precharge
Time22
tDAL
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-
(tWR/
tCK)
+
(tRP/tCK)
-tCK
System
Clock Cycle
Time24
CL = 3
tCK
510--------ns
CL = 2.5 6 12 6 12 7.5 12 7.5 12 8.0 12 ns
CL = 2 7.5 12 7.5 12 7.5 12 10 12 10 12 ns
Clock High Level Width tCH 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK
Clock Low Level Width tCL 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tCK
Data-Out edge to Clock
edge Skew tAC -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.75 0.75 ns
DQS-Out edge to Clock
edge Skew tDQSCK -0.55 0.55 -0.6 0.6 -0.75 0.75 -0.75 0.75 -0.75 0.75 ns
DQS-Out edge to Data-
Out edge Skew21 tDQSQ - 0.4 - 0.4 - 0.5 - 0.5 - 0.6 ns
Data-Out hold time
from DQS20 tQH tHP
-tQHS -tHP
-tQHS -tHP
-tQHS -tHP
-tQHS -tHP
-tQHS -ns
Clock Half Period19,20 tHP min
(tCL,tCH) -min
(tCL,tCH) -min
(tCL,tCH) -min
(tCL,tCH) -min
(tCL,tCH) -ns
Data Hold Skew
Factor20 tQHS - 0.5 - 0.5 - 0.75 - 0.75 - 0.75 ns
Valid Data Output
Window tDV tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ tQH-tDQSQ ns
Rev 1.0 / June 2007 23
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
- Continue
Parameter Symbol
DDR400B DDR333 DDR266A DDR266B DDR200
UNIT
Min Max Min Max Min Max Min Max Min Max
Data-out high-impedance window
from CK,/CK10 tHZ -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns
Data-out low-impedance window
from CK, /CK10 tLZ -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns
Input Setup Time (fast slew
rate)14,16-18 tIS 0.6 - 0.75 - 0.9 - 0.9 - 1.1 - ns
Input Hold Time (fast slew
rate)14,16-18 tIH 0.6 - 0.75 - 0.9 - 0.9 - 1.1 - ns
Input Setup Time (slow slew
rate)15-18 tIS 0.7 - 0.8 - 1.0 - 1.0 - 1.1 - ns
Input Hold Time (slow slew
rate)15-18 tIH 0.7 - 0.8 - 1.0 - 1.0 - 1.1 - ns
Input Pulse Width17 tIPW 2.2 - 2.2 - 2.2 - 2.2 - 2.5 - ns
Write DQS High Level Width tDQSH 0.35 - 0.35 - 0.35 - 0.35 - 0.35 - tCK
Write DQS Low Level Width tDQSL 0.35 - 0.35 - 0.35 - 0.35 - 0.35 - tCK
Clock to First Rising edge of DQS-
In tDQSS 0.72 1.25 0.75 1.25 0.75 1.25 0.75 1.25 0.75 1.25 tCK
DQS falling edge to CK setup time tDSS 0.2 -0.2-0.2-0.2-0.2-tCK
DQS falling edge hold time from
CK tDSH 0.2 -0.2-0.2-0.2-0.2-tCK
DQ & DM input setup time25 tDS 0.4 - 0.45 - 0.5 - 0.5 - 0.6 - ns
DQ & DM input hold time25 tDH 0.4 - 0.45 - 0.5 - 0.5 - 0.6 - ns
DQ & DM Input Pulse Width17 tDIPW 1.75 - 1.75 - 1.75 - 1.75 - 2 - ns
Read DQS Preamble Time tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tCK
Read DQS Postamble Time tRPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK
Write DQS Preamble Setup Time12 tWPRES 0-0-0- 0 -0 -ns
Write DQS Preamble Hold Time tWPREH 0.25 - 0.25 - 0.25 - 0.25 - 0.25 - tCK
Write DQS Postamble Time11 tWPST 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tCK
Mode Register Set Delay tMRD 2-2-2- 2 -2 -tCK
Exit Self Refresh to non-Read
command23 tXSNR 75 - 75 - 75 - 75 - 80 - ns
Exit Self Refresh to Read
command tXSRD 200 - 200 - 200 - 200 - 200 - tCK
Average Periodic Refresh
Interval13,25 tREFI -7.8 - 7.8 - 7.8 - 7.8 - 7.8 us
Rev 1.0 / June 2007 24
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
Note:
1. All voltages referenced to Vss.
2. Tests for ac timing, IDD, and electrical, ac and dc characteristics, may be conducted at nominal reference/supply voltage levels,
but the related specifications and device operation are guaranteed for the full voltage range specified.
3. Below figure represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to
be either a precise representation of the typical system environment nor a depiction of the actual load presented by a production
tester. System designers will use IBIS or other simulation tools to correlate the timing reference load to a system environment.
Manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the tester elec-
tronics).
4. AC timing and IDD tests may use a VIL to VIH swing of up to 1.5 V in the test environment, but input timing is still referenced to
VREF (or to the crossing point for CK, /CK), and parameter specifications are guaranteed for the specified ac input levels under
normal use conditions. The minimum slew rate for the input signals is 1 V/ns in the range between VIL(ac) and VIH(ac).
5. The ac and dc input level specifications are as defined in the SSTL_2 Standard (i.e., the receiver will effectively switch as a result
of the signal crossing the ac input level and will remain in that state as long as the signal does not ring back above (below) the
dc input LOW (HIGH) level.
6. Inputs are not recognized as valid until VREF stabilizes. Exception: during the period before VREF stabilizes, CKE < 0.2VDDQ is
recognized as LOW.
7. The CK, /CK input reference level (for timing referenced to CK, /CK) is the point at which CK and /CK cross; the input reference
level for signals other than CK, /CK is VREF.
8. The output timing reference voltage level is VTT.
9. Operation or timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the DRAM must
be powered down and then restarted through the specified initialization sequence before normal operation can continue.
10. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. These parameters are not referenced to
a specific voltage level but specify when the device output is no longer driving (HZ), or begins driving (LZ).
11. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but
system performance (bus turnaround) will degrade accordingly.
12. The specific requirement is that DQS be valid (HIGH, LOW, or at some point on a valid transition) on or before this CK edge. A
valid transition is defined as monotonic and meeting the input slew rate specifications of the device. When no writes were previ-
ously in progress on the bus, DQS will be transitioning from High-Z to logic LOW. If a previous write was in progress, DQS could
be HIGH, LOW, or transitioning from HIGH to LOW at this time, depending on tDQSS.
13. A maximum of eight AUTO REFRESH commands can be posted to any given DDR SDRAM device.
14. For command/address input slew rate ≥1.0 V/ns.
15. For command/address input slew rate ≥0.5 V/ns and ＜1.0 V/ns
16. For CK & /CK slew rate ≥1.0 V/ns (single-ended)
17. These parameters guarantee device timing, but they are not necessarily tested on each device.
They may be guaranteed by device design or tester correlation.
18. Slew Rate is measured between VOH(ac) and VOL(ac).
19. Min (tCL, tCH) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this
value can be greater than the minimum specification limits for tCL and tCH).
For example, tCL and tCH are = 50% of the period, less the half period jitter (tJIT(HP)) of the clock source, and less the half
period jitter due to crosstalk (tJIT(crosstalk)) into the clock traces.
Figure: Timing Reference Load
VDDQ
50
Output
(VOUT)
30 pF
Ω
Rev 1.0 / June 2007 25
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20.tQH = tHP - tQHS, where:
tHP = minimum half clock period for any given cycle and is defined by clock high or clock low (tCH, tCL). tQHS accounts for 1) The
pulse duration distortion of on-chip clock circuits; and 2) The worst case push--out of DQS on one transition followed by the
worst case pull--in of DQ on the next transition, both of which are, separately, due to data pin skew and output pattern effects,
and p-channel to n-channel variation of the output drivers.
21. tDQSQ:
Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any given
cycle.
22. tDAL = (tWR/tCK) + (tRP/tCK)
For each of the terms above, if not already an integer, round to the next highest integer.
Example: For DDR266B at CL=2.5 and tCK=7.5 ns
tDAL = ((15 ns / 7.5 ns) + (20 ns / 7.5 ns)) clocks
= ((2) + (3)) clocks
= 5 clocks
23. In all circumstances, tXSNR can be satisfied using
tXSNR = tRFCmin + 1*tCK
24. The only time that the clock frequency is allowed to change is during self-refresh mode.
25. If refresh timing or tDS/tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid
READ can be executed.
Rev 1.0 / June 2007 26
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SYSTEM CHARACTERISTICS CONDITIONS for DDR SDRAMS
The following tables are described specification parameters that required in systems using DDR devices to ensure
proper performance. These characteristics are for system simulation purposes and are guaranteed by design.
Input Slew Rate for DQ/DM/DQS (Table a.)
Address & Control Input Setup & Hold Time Derating (Table b.)
DQ & DM Input Setup & Hold Time Derating (Table c.)
DQ & DM Input Setup & Hold Time Derating for Rise/Fall Delta Slew Rate (Table d.)
Output Slew Rate Characteristics (for x4, x8 Devices) (Table e.)
Output Slew Rate Characteristics (for x16 Device) (Table f.)
Output Slew Rate Matching Ratio Characteristics (Table g.)
AC CHARACTERISTICS DDR400 DDR333 DDR266 DDR200 UNIT Note
PARAMETER Symbol min max min max min max min max
DQ/DM/DQS input slew rate
measured between VIH(DC),
VIL(DC) and VIL(DC), VIH(DC)
DCSLEW 0.5 4.0 0.5 4.0 0.5 4.0 0.5 4.0 V/ns 1,12
Input Slew Rate Delta tIS Delta tIH UNIT Note
0.5 V/ns 0 0 ps 9
0.4 V/ns +50 0 ps 9
0.3 V/ns +100 0 ps 9
Input Slew Rate Delta tDS Delta tDH UNIT Note
0.5 V/ns 0 0 ps 11
0.4 V/ns +75 0 ps 11
0.3 V/ns +150 0 ps 11
Input Slew Rate Delta tDS Delta tDH UNIT Note
±0.0 ns/V 00ps10
±0.25 ns/V +50 +50 ps 10
±0.5 ns/V +100 +100 ps 10
Slew Rate Characteristic Typical Range (V/
ns) Minimum (V/ns) Maximum (V/ns) Note
Pullup Slew Rate 1.2 - 2.5 1.0 4.5 1,3,4,6,7,8
Pulldown Slew Rate 1.2 - 2.5 1.0 4.5 2,3,4,6,7,8
Slew Rate Characteristic Typical Range (V/
ns) Minimum (V/ns) Maximum (V/ns) Note
Pullup Slew Rate 1.2 - 2.5 1.0 4.5 1,3,4,6,7,8
Pulldown Slew Rate 1.2 - 2.5 1.0 4.5 2,3,4,6,7,8
Slew Rate Characteristic DDR266A DDR266B DDR200 Note
Parameter min max min max min max
Output Slew Rate Matching Ratio
(Pullup to Pulldown) - - - - 0.71 1.4 5,12
Rev 1.0 / June 2007 27
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
Notes:
1. Pullup slew rate is characterized under the test conditions as shown in below Figure.
2. Pulldown slew rate is measured under the test conditions shown in below Figure.
3. Pullup slew rate is measured between (VDDQ/2 - 320 mV ±250mV)
Pulldown slew rate is measured between (VDDQ/2 + 320mV ±250mV)
Pullup and Pulldown slew rate conditions are to be met for any pattern of data, including all outputs switching and only one output
switching.
Example: For typical slew, DQ0 is switching
For minimum slew rate, all DQ bits are switching worst case pattern
For maximum slew rate, only one DQ is switching from either high to low, or low to high.
The remaining DQ bits remain the same as for previous state.
4. Evaluation conditions
Typical: 25 oC (Ambient), VDDQ = nominal, typical process
Minimum: 70 oC (Ambient), VDDQ = minimum, slow-slow process
Maximum: 0 oC (Ambient), VDDQ = Maximum, fast-fast process
5. The ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire temperature
and voltage range. For a given output, it represents the maximum difference between pullup and pulldown drivers due to process
variation.
6. Verified under typical conditions for qualification purposes.
7. TSOP-II package devices only.
8. Only intended for operation up to 256 Mbps per pin.
9. A derating factor will be used to increase tIS and tIH in the case where the input slew rate is below 0.5 V/ns as shown in Table b.
The Input slew rate is based on the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), sim-
ilarly for rising transitions.
10. A derating factor will be used to increase tDS and tDH in the case where DQ, DM, and DQS slew rates differ, as shown in Tables c
& d. Input slew rate is based on the larger of AC-AC delta rise, fall rate and DC-DC delta rise, fall rate. Input slew rate is based on
the lesser of the slew rates determined by either VIH(AC) to VIL(AC) or VIH(DC) to VIL(DC), similarly for rising transitions. The
delta rise/fall rate is calculated as:
{1/(Slew Rate1)} - {1/(slew Rate2)}
For example:
If Slew Rate 1 is 0.5 V/ns and Slew Rate 2 is 0.4 V/ns, then the delta rise, fall rate is -0.5 ns/V. Using the table given, this would
result in the need for an increase in tDS and tDH of 100ps.
11. Table c is used to increase tDS and tDH in the case where the I/O slew rate is below 0.5 V/ns. The I/O slew rate is based on the
lesser of the AC-AC slew rate and the DC-DC slew rate. The input slew rate is based on the lesser of the slew rates determined by
either VIH(ac) to VIL(AC) or VIH(DC) to VIL(DC), and similarly for rising transitions.
12. DQS, DM, and DQ input slew rate is specified to prevent double clocking of data and preserve setup and hold times. Signal tran-
sitions through the DC region must be monotonic.
ch
50
Output
(VOUT)
VSSQ
Test Point
Figure: Pullup Slew rate
Ω
VDDQ
50
Test Point
Output
(VOUT)
Figure: Pulldown Slew rate
Ω
Rev 1.0 / June 2007 28
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
CAPACITANCE (TA=25oC, f=100MHz)
Note:
1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC = VDDQ/2, VOpeak-to-peak = 0.2V
2. Pins not under test are tied to GND.
3. These values are guaranteed by design and are tested on a sample basis only.
OUTPUT LOAD CIRCUIT
Parameter Pin Symbol Min Max Unit
Input Clock Capacitance CK, /CK CI1 1.5 2.5 pF
Delta Input Clock Capacitance CK, /CK Delta CI1 -0.25pF
Input Capacitance All other input-only pins CI1 1.5 2.5 pF
Delta Input Capacitance All other input-only pins Delta CI2 -0.5pF
Input / Output Capacitance DQ, DQS, DM CIO 3.5 4.5 pF
Delta Input / Output Capacitance DQ, DQS, DM Delta CIO -0.5pF
VREF
VTT
RT=50Ω
Zo=50Ω
CL=30pF
Output
Rev 1.0 / June 2007 29
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HY5DU12822DF(P)-xI / HY5DU121622DF(P)-xI
PACKAGE INFORMATION
1.10±0.10
0.34±0.10
C
SEATING
PLANE
x11=
321
789
BOTTOM VIEW
x8=
1.00
6.40
11.00
0.80
0.80
0.15
M
C
A
B
60-
0.45±0.05
A1 BALL MARK
A
B
TOP VIEW
10.0±0.10
12.0±0.10
A1 BALL MARK
0.15C (4x)
All dimensions in millimeters
1.00
ABCDEF GH KJLM
0.10
C
