2. 30¡ À0. 05
1. 25¡ À0. 05
1.30¡À0.03
0.30
2.00¡À0.051.01 R
EF
BAS40W SERIES SCHOTTKY DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IF: 200 mA
Collector-base voltage
VR: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
BAS40W Marking: 43.K43 BAS40W-04 Marking:44.K44 BAS40W-05 Marking: 45.K45 BAS40W-06 Marking: 46.K46
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) R I
R= 10µA 40 V
Reverse voltage leakage current IR V
R=30V 200
nA
Forward voltage VF IF=1mA
IF=40 mA 380
1000 mV
Diode capacit a nce CD V
R=0V, f=1MHz 5 pF
Reveres recover y time trr IF=10mA through
IR=1 0mA to IR= 1mA 5 nS
Unit: mm
SOT-323
