S-801 Series
www.sii-ic.com
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
WITH DELAY CIRCUIT (INTERNAL DELAY TIME SETTING)
© Seiko Instruments Inc., 2000-2010 Rev.4.0_00
Seiko Instruments Inc. 1
The S-801 Series is a series of high-precision voltage detectors with a built-in delay time generator of fixed time
developed using CMOS process. The detection voltage is fixed internally, with an accuracy of ±2.0 %. Internal
oscillator and counter timer can delay the release signal without external parts. Three delay times 50 ms, 100 ms,
and 200 ms are available. Two output forms, Nch open-drain and CMOS output, are available.
Features
• Ultra-low current consumption 1.3 μA typ. (at VDD=3.5 V)
• High-precision detection voltage ±2.0 %
• Hysteresis characteristics 60 mV typ.
• Detection voltage 2.2 V to 6.0 V (0.1 V step)
• Three delay times A type 50 ms typ.
B type 100 ms typ.
C type 200 ms typ.
• ON/OFF switching function of delay time (DS pin)
• Operating voltage range 0.95 V to 10.0 V
• Output forms Nch open-drain output (Active Low)
CMOS output (Active Low)
• Lead-free, Sn 100%, halogen-free*1
*1. Refer to “ Product Name Structure” for details.
Applications
• Power monitor for portable equipment such as notebook computers, digital still cameras, PDA, and
cellular phones.
• Constant voltage power monitor for cameras, video equipment and communication devices.
• Power monitor for microcomputers and reset for CPUs.
Packages
• SOT-23-5
• SNT-4A
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
2 Seiko Instruments Inc.
Block Diagrams
1. Nch Open-drain Output Products
+
−
Delay circu it
DS
Oscillator
counter
timer
OUT
*1
VREF
VSS
VDD
*1
*1
*1. Parasitic diode
Figure 1
2. CMOS Output Products
VREF
+
− OUT
*
1
*1
Delay ci rcui t
DS
Oscillator
counter
timer
VSS
VDD
*1
*1
*1. Parasitic diode
Figure 2
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 3
Product Name Structure
The detection voltage, delay time, output form and packages for S-801 Series can be selected at the user's
request. Refer to the “1. Product name” for the construction of the product name, “2. Package” regarding
the package drawings and “3. Product Name List” for the full product names.
1. Product Name
S-801xx x x xx - xxx xx x
IC direction in tape sp ecifications*1
T2: SOT-23-5
TF: SNT-4A
Product code*2
Package code
MC: SOT-23-5
PF: SNT-4A
Output form
N: Nch open-drain output (Active low)
L: CMOS output (Active low)
Delay time
A: 50 ms typ.
B: 100 ms typ.
C: 200 ms typ.
Detection voltage value
22 to 60
(e.g. When the detection voltage is 2.2 V,
it is expressed as 22.)
Environmental code
U: Lead-free (Sn 100%), halogen-free
G: Lead-free (for det ails, please contact our sales office)
*1. Refer to the taping specifications at the end this book.
*2. Refer to the Table 2 in the “3. Product name list”.
2. Package
Drawing code
Package name Package Tape Reel Land
SOT-23-5 MP005-A-P-SD MP005-A-C-SD MP005-A-R-SD —
SNT-4A PF004-A-P-SD PF004-A-C-SD PF004-A-R-SD PF004-A-L-SD
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
4 Seiko Instruments Inc.
3. Product Name List
3-1. SOT-23-5
Table 1 (1/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
2.2 V ±2.0% 50 ms typ. S-80122ANMC-JCHT2x S-80122ALMC-JAHT2x
100 ms typ. S-80122BNMC-JGHT2x S-80122BLMC-JEHT2x
200 ms typ. S-80122CNMC-JKHT2x S-80122CLMC-JIHT2x
2.3 V ±2.0% 50 ms typ. S-80123ANMC-JCIT2x S-80123ALMC-JAIT2x
100 ms typ. S-80123BNMC-JGIT2x S-80123BLMC-JEIT2x
200 ms typ. S-80123CNMC-JKIT2x S-80123CLMC-JIIT2x
2.4 V ±2.0% 50 ms typ. S-80124ANMC-JCJT2x S-80124ALMC-JAJT2x
100 ms typ. S-80124BNMC-JGJT2x S-80124BLMC-JEJT2x
200 ms typ. S-80124CNMC-JKJT2x S-80124CLMC-JIJT2x
2.5 V ±2.0% 50 ms typ. S-80125ANMC-JCKT2x S-80125ALMC-JAKT2x
100 ms typ. S-80125BNMC-JGKT2x S-80125BLMC-JEKT2x
200 ms typ. S-80125CNMC-JKKT2x S-80125CLMC-JIKT2x
2.6 V ±2.0% 50 ms typ. S-80126ANMC-JCLT2x S-80126ALMC-JALT2x
100 ms typ. S-80126BNMC-JGLT2x S-80126BLMC-JELT2x
200 ms typ. S-80126CNMC-JKLT2x S-80126CLMC-JILT2x
2.7 V ±2.0% 50 ms typ. S-80127ANMC-JCMT2x S-80127ALMC-JAMT2x
100 ms typ. S-80127BNMC-JGMT2x S-80127BLMC-JEMT2x
200 ms typ. S-80127CNMC-JKMT2x S-80127CLMC-JIMT2x
2.8 V ±2.0% 50 ms typ. S-80128ANMC-JCNT2x S-80128ALMC-JANT2x
100 ms typ. S-80128BNMC-JGNT2x S-80128BLMC-JENT2x
200 ms typ. S-80128CNMC-JKNT2x S-80128CLMC-JINT2x
2.9 V ±2.0% 50 ms typ. S-80129ANMC-JCOT2x S-80129ALMC-JAOT2x
100 ms typ. S-80129BNMC-JGOT2x S-80129BLMC-JEOT2x
200 ms typ. S-80129CNMC-JKOT2x S-80129CLMC-JIOT2x
3.0 V ±2.0% 50 ms typ. S-80130ANMC-JCPT2x S-80130ALMC-JAPT2x
100 ms typ. S-80130BNMC-JGPT2x S-80130BLMC-JEPT2x
200 ms typ. S-80130CNMC-JKPT2x S-80130CLMC-JIPT2x
3.1 V ±2.0% 50 ms typ. S-80131ANMC-JCQT2x S-80131ALMC-JAQT2x
100 ms typ. S-80131BNMC-JGQT2x S-80131BLMC-JEQT2x
200 ms typ. S-80131CNMC-JKQT2x S-80131CLMC-JIQT2x
3.2 V ±2.0% 50 ms typ. S-80132ANMC-JCRT2x S-80132ALMC-JART2x
100 ms typ. S-80132BNMC-JGRT2x S-80132BLMC-JERT2x
200 ms typ. S-80132CNMC-JKRT2x S-80132CLMC-JIRT2x
3.3 V ±2.0% 50 ms typ. S-80133ANMC-JCST2x S-80133ALMC-JAST2x
100 ms typ. S-80133BNMC-JGST2x S-80133BLMC-JEST2x
200 ms typ. S-80133CNMC-JKST2x S-80133CLMC-JIST2x
3.4 V ±2.0% 50 ms typ. S-80134ANMC-JCTT2x S-80134ALMC-JATT2x
100 ms typ. S-80134BNMC-JGTT2x S-80134BLMC-JETT2x
200 ms typ. S-80134CNMC-JKTT2x S-80134CLMC-JITT2x
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 5
Table 1 (2/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
3.5 V ±2.0% 50 ms typ. S-80135ANMC-JCUT2x S-80135ALMC-JAUT2x
100 ms typ. S-80135BNMC-JGUT2x S-80135BLMC-JEUT2x
200 ms typ. S-80135CNMC-JKUT2x S-80135CLMC-JIUT2x
3.6 V ±2.0% 50 ms typ. S-80136ANMC-JCVT2x S-80136ALMC-JAVT2x
100 ms typ. S-80136BNMC-JGVT2x S-80136BLMC-JEVT2x
200 ms typ. S-80136CNMC-JKVT2x S-80136CLMC-JIVT2x
3.7 V ±2.0% 50 ms typ. S-80137ANMC-JCWT2x S-80137ALMC-JAWT2x
100 ms typ. S-80137BNMC-JGWT2x S-80137BLMC-JEWT2x
200 ms typ. S-80137CNMC-JKWT2x S-80137CLMC-JIWT2x
3.8 V ±2.0% 50 ms typ. S-80138ANMC-JCXT2x S-80138ALMC-JAXT2x
100 ms typ. S-80138BNMC-JGXT2x S-80138BLMC-JEXT2x
200 ms typ. S-80138CNMC-JKXT2x S-80138CLMC-JIXT2x
3.9 V ±2.0% 50 ms typ. S-80139ANMC-JCYT2x S-80139ALMC-JAYT2x
100 ms typ. S-80139BNMC-JGYT2x S-80139BLMC-JEYT2x
200 ms typ. S-80139CNMC-JKYT2x S-80139CLMC-JIYT2x
4.0 V ±2.0% 50 ms typ. S-80140ANMC-JCZT2x S-80140ALMC-JAZT2x
100 ms typ. S-80140BNMC-JGZT2x S-80140BLMC-JEZT2x
200 ms typ. S-80140CNMC-JKZT2x S-80140CLMC-JIZT2x
4.1 V ±2.0% 50 ms typ. S-80141ANMC-JC2T2x S-80141ALMC-JA2T2x
100 ms typ. S-80141BNMC-JG2T2x S-80141BLMC-JE2T2x
200 ms typ. S-80141CNMC-JK2T2x S-80141CLMC-JI2T2x
4.2 V ±2.0% 50 ms typ. S-80142ANMC-JC3T2x S-80142ALMC-JA3T2x
100 ms typ. S-80142BNMC-JG3T2x S-80142BLMC-JE3T2x
200 ms typ. S-80142CNMC-JK3T2x S-80142CLMC-JI3T2x
4.3 V ±2.0% 50 ms typ. S-80143ANMC-JC4T2x S-80143ALMC-JA4T2x
100 ms typ. S-80143BNMC-JG4T2x S-80143BLMC-JE4T2x
200 ms typ. S-80143CNMC-JK4T2x S-80143CLMC-JI4T2x
4.4 V ±2.0% 50 ms typ. S-80144ANMC-JC5T2x S-80144ALMC-JA5T2x
100 ms typ. S-80144BNMC-JG5T2x S-80144BLMC-JE5T2x
200 ms typ. S-80144CNMC-JK5T2x S-80144CLMC-JI5T2x
4.5 V ±2.0% 50 ms typ. S-80145ANMC-JC6T2x S-80145ALMC-JA6T2x
100 ms typ. S-80145BNMC-JG6T2x S-80145BLMC-JE6T2x
200 ms typ. S-80145CNMC-JK6T2x S-80145CLMC-JI6T2x
4.6 V ±2.0% 50 ms typ. S-80146ANMC-JC7T2x S-80146ALMC-JA7T2x
100 ms typ. S-80146BNMC-JG7T2x S-80146BLMC-JE7T2x
200 ms typ. S-80146CNMC-JK7T2x S-80146CLMC-JI7T2x
4.7 V ±2.0% 50 ms typ. S-80147ANMC-JC8T2x S-80147ALMC-JA8T2x
100 ms typ. S-80147BNMC-JG8T2x S-80147BLMC-JE8T2x
200 ms typ. S-80147CNMC-JK8T2x S-80147CLMC-JI8T2x
4.8 V ±2.0% 50 ms typ. S-80148ANMC-JC9T2x S-80148ALMC-JA9T2x
100 ms typ. S-80148BNMC-JG9T2x S-80148BLMC-JE9T2x
200 ms typ. S-80148CNMC-JK9T2x S-80148CLMC-JI9T2x
4.9 V ±2.0% 50 ms typ. S-80149ANMC-JDAT2x S-80149ALMC-JBAT2x
100 ms typ. S-80149BNMC-JHAT2x S-80149BLMC-JFAT2x
200 ms typ. S-80149CNMC-JLAT2x S-80149CLMC-JJAT2x
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
6 Seiko Instruments Inc.
Table 1 (3/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
5.0 V ±2.0% 50 ms typ. S-80150ANMC-JDBT2x S-80150ALMC-JBBT2x
100 ms typ. S-80150BNMC-JHBT2x S-80150BLMC-JFBT2x
200 ms typ. S-80150CNMC-JLBT2x S-80150CLMC-JJBT2x
5.1 V ±2.0% 50 ms typ. S-80151ANMC-JDCT2x S-80151ALMC-JBCT2x
100 ms typ. S-80151BNMC-JHCT2x S-80151BLMC-JFCT2x
200 ms typ. S-80151CNMC-JLCT2x S-80151CLMC-JJCT2x
5.2 V ±2.0% 50 ms typ. S-80152ANMC-JDDT2x S-80152ALMC-JBDT2x
100 ms typ. S-80152BNMC-JHDT2x S-80152BLMC-JFDT2x
200 ms typ. S-80152CNMC-JLDT2x S-80152CLMC-JJDT2x
5.3 V ±2.0% 50 ms typ. S-80153ANMC-JDET2x S-80153ALMC-JBET2x
100 ms typ. S-80153BNMC-JHET2x S-80153BLMC-JFET2x
200 ms typ. S-80153CNMC-JLET2x S-80153CLMC-JJET2x
5.4 V ±2.0% 50 ms typ. S-80154ANMC-JDFT2x S-80154ALMC-JBFT2x
100 ms typ. S-80154BNMC-JHFT2x S-80154BLMC-JFFT2x
200 ms typ. S-80154CNMC-JLFT2x S-80154CLMC-JJFT2x
5.5 V ±2.0% 50 ms typ. S-80155ANMC-JDGT2x S-80155ALMC-JBGT2x
100 ms typ. S-80155BNMC-JHGT2x S-80155BLMC-JFGT2x
200 ms typ. S-80155CNMC-JLGT2x S-80155CLMC-JJGT2x
5.6 V ±2.0% 50 ms typ. S-80156ANMC-JDHT2x S-80156ALMC-JBHT2x
100 ms typ. S-80156BNMC-JHHT2x S-80156BLMC-JFHT2x
200 ms typ. S-80156CNMC-JLHT2x S-80156CLMC-JJHT2x
5.7 V ±2.0% 50 ms typ. S-80157ANMC-JDIT2x S-80157ALMC-JBIT2x
100 ms typ. S-80157BNMC-JHIT2x S-80157BLMC-JFIT2x
200 ms typ. S-80157CNMC-JLIT2x S-80157CLMC-JJIT2x
5.8 V ±2.0% 50 ms typ. S-80158ANMC-JDJT2x S-80158ALMC-JBJT2x
100 ms typ. S-80158BNMC-JHJT2x S-80158BLMC-JFJT2x
200 ms typ. S-80158CNMC-JLJT2x S-80158CLMC-JJJT2x
5.9 V ±2.0% 50 ms typ. S-80159ANMC-JDKT2x S-80159ALMC-JBKT2x
100 ms typ. S-80159BNMC-JHKT2x S-80159BLMC-JFKT2x
200 ms typ. S-80159CNMC-JLKT2x S-80159CLMC-JJKT2x
6.0 V ±2.0% 50 ms typ. S-80160ANMC-JDLT2x S-80160ALMC-JBLT2x
100 ms typ. S-80160BNMC-JHLT2x S-80160BLMC-JFLT2x
200 ms typ. S-80160CNMC-JLLT2x S-80160CLMC-JJLT2x
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 7
3-2. SNT-4A
Table 2 (1/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
2.2 V ±2.0% 50 ms typ. S-80122ANPF-JCHTFx S-80122ALPF-JAHTFx
100 ms typ. S-80122BNPF-JGHTFx S-80122BLPF-JEHTFx
200 ms typ. S-80122CNPF-JKHTFx S-80122CLPF-JIHTFx
2.3 V ±2.0% 50 ms typ. S-80123ANPF-JCITFx S-80123ALPF-JAITFx
100 ms typ. S-80123BNPF-JGITFx S-80123BLPF-JEITFx
200 ms typ. S-80123CNPF-JKITFx S-80123CLPF-JIITFx
2.4 V ±2.0% 50 ms typ. S-80124ANPF-JCJTFx S-80124ALPF-JAJTFx
100 ms typ. S-80124BNPF-JGJTFx S-80124BLPF-JEJTFx
200 ms typ. S-80124CNPF-JKJTFx S-80124CLPF-JIJTFx
2.5 V ±2.0% 50 ms typ. S-80125ANPF-JCKTFx S-80125ALPF-JAKTFx
100 ms typ. S-80125BNPF-JGKTFx S-80125BLPF-JEKTFx
200 ms typ. S-80125CNPF-JKKTFx S-80125CLPF-JIKTFx
2.6 V ±2.0% 50 ms typ. S-80126ANPF-JCLTFx S-80126ALPF-JALTFx
100 ms typ. S-80126BNPF-JGLTFx S-80126BLPF-JELTFx
200 ms typ. S-80126CNPF-JKLTFx S-80126CLPF-JILTFx
2.7 V ±2.0% 50 ms typ. S-80127ANPF-JCMTFx S-80127ALPF-JAMTFx
100 ms typ. S-80127BNPF-JGMTFx S-80127BLPF-JEMTFx
200 ms typ. S-80127CNPF-JKMTFx S-80127CLPF-JIMTFx
2.8 V ±2.0% 50 ms typ. S-80128ANPF-JCNTFx S-80128ALPF-JANTFx
100 ms typ. S-80128BNPF-JGNTFx S-80128BLPF-JENTFx
200 ms typ. S-80128CNPF-JKNTFx S-80128CLPF-JINTFx
2.9 V ±2.0% 50 ms typ. S-80129ANPF-JCOTFx S-80129ALPF-JAOTFx
100 ms typ. S-80129BNPF-JGOTFx S-80129BLPF-JEOTFx
200 ms typ. S-80129CNPF-JKOTFx S-80129CLPF-JIOTFx
3.0 V ±2.0% 50 ms typ. S-80130ANPF-JCPTFx S-80130ALPF-JAPTFx
100 ms typ. S-80130BNPF-JGPTFx S-80130BLPF-JEPTFx
200 ms typ. S-80130CNPF-JKPTFx S-80130CLPF-JIPTFx
3.1 V ±2.0% 50 ms typ. S-80131ANPF-JCQTFx S-80131ALPF-JAQTFx
100 ms typ. S-80131BNPF-JGQTFx S-80131BLPF-JEQTFx
200 ms typ. S-80131CNPF-JKQTFx S-80131CLPF-JIQTFx
3.2 V ±2.0% 50 ms typ. S-80132ANPF-JCRTFx S-80132ALPF-JARTFx
100 ms typ. S-80132BNPF-JGRTFx S-80132BLPF-JERTFx
200 ms typ. S-80132CNPF-JKRTFx S-80132CLPF-JIRTFx
3.3 V ±2.0% 50 ms typ. S-80133ANPF-JCSTFx S-80133ALPF-JASTFx
100 ms typ. S-80133BNPF-JGSTFx S-80133BLPF-JESTFx
200 ms typ. S-80133CNPF-JKSTFx S-80133CLPF-JISTFx
3.4 V ±2.0% 50 ms typ. S-80134ANPF-JCTTFx S-80134ALPF-JATTFx
100 ms typ. S-80134BNPF-JGTTFx S-80134BLPF-JETTFx
200 ms typ. S-80134CNPF-JKTTFx S-80134CLPF-JITTFx
3.5 V ±2.0% 50 ms typ. S-80135ANPF-JCUTFx S-80135ALPF-JAUTFx
100 ms typ. S-80135BNPF-JGUTFx S-80135BLPF-JEUTFx
200 ms typ. S-80135CNPF-JKUTFx S-80135CLPF-JIUTFx
3.6 V ±2.0% 50 ms typ. S-80136ANPF-JCVTFx S-80136ALPF-JAVTFx
100 ms typ. S-80136BNPF-JGVTFx S-80136BLPF-JEVTFx
200 ms typ. S-80136CNPF-JKVTFx S-80136CLPF-JIVTFx
3.7 V ±2.0% 50 ms typ. S-80137ANPF-JCWTFx S-80137ALPF-JAWTFx
100 ms typ. S-80137BNPF-JGWTFx S-80137BLPF-JEWTFx
200 ms typ. S-80137CNPF-JKWTFx S-80137CLPF-JIWTFx
.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
8 Seiko Instruments Inc.
Table 2 (2/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
3.8 V ±2.0% 50 ms typ. S-80138ANPF-JCXTFx S-80138ALPF-JAXTFx
100 ms typ. S-80138BNPF-JGXTFx S-80138BLPF-JEXTFx
200 ms typ. S-80138CNPF-JKXTFx S-80138CLPF-JIXTFx
3.9 V ±2.0% 50 ms typ. S-80139ANPF-JCYTFx S-80139ALPF-JAYTFx
100 ms typ. S-80139BNPF-JGYTFx S-80139BLPF-JEYTFx
200 ms typ. S-80139CNPF-JKYTFx S-80139CLPF-JIYTFx
4.0 V ±2.0% 50 ms typ. S-80140ANPF-JCZTFx S-80140ALPF-JAZTFx
100 ms typ. S-80140BNPF-JGZTFx S-80140BLPF-JEZTFx
200 ms typ. S-80140CNPF-JKZTFx S-80140CLPF-JIZTFx
4.1 V ±2.0% 50 ms typ. S-80141ANPF-JC2TFx S-80141ALPF-JA2TFx
100 ms typ. S-80141BNPF-JG2TFx S-80141BLPF-JE2TFx
200 ms typ. S-80141CNPF-JK2TFx S-80141CLPF-JI2TFx
4.2 V ±2.0% 50 ms typ. S-80142ANPF-JC3TFx S-80142ALPF-JA3TFx
100 ms typ. S-80142BNPF-JG3TFx S-80142BLPF-JE3TFx
200 ms typ. S-80142CNPF-JK3TFx S-80142CLPF-JI3TFx
4.3 V ±2.0% 50 ms typ. S-80143ANPF-JC4TFx S-80143ALPF-JA4TFx
100 ms typ. S-80143BNPF-JG4TFx S-80143BLPF-JE4TFx
200 ms typ. S-80143CNPF-JK4TFx S-80143CLPF-JI4TFx
4.4 V ±2.0% 50 ms typ. S-80144ANPF-JC5TFx S-80144ALPF-JA5TFx
100 ms typ. S-80144BNPF-JG5TFx S-80144BLPF-JE5TFx
200 ms typ. S-80144CNPF-JK5TFx S-80144CLPF-JI5TFx
4.5 V ±2.0% 50 ms typ. S-80145ANPF-JC6TFx S-80145ALPF-JA6TFx
100 ms typ. S-80145BNPF-JG6TFx S-80145BLPF-JE6TFx
200 ms typ. S-80145CNPF-JK6TFx S-80145CLPF-JI6TFx
4.6 V ±2.0% 50 ms typ. S-80146ANPF-JC7TFx S-80146ALPF-JA7TFx
100 ms typ. S-80146BNPF-JG7TFx S-80146BLPF-JE7TFx
200 ms typ. S-80146CNPF-JK7TFx S-80146CLPF-JI7TFx
4.7 V ±2.0% 50 ms typ. S-80147ANPF-JC8TFx S-80147ALPF-JA8TFx
100 ms typ. S-80147BNPF-JG8TFx S-80147BLPF-JE8TFx
200 ms typ. S-80147CNPF-JK8TFx S-80147CLPF-JI8TFx
4.8 V ±2.0% 50 ms typ. S-80148ANPF-JC9TFx S-80148ALPF-JA9TFx
100 ms typ. S-80148BNPF-JG9TFx S-80148BLPF-JE9TFx
200 ms typ. S-80148CNPF-JK9TFx S-80148CLPF-JI9TFx
4.9 V ±2.0% 50 ms typ. S-80149ANPF-JDATFx S-80149ALPF-JBATFx
100 ms typ. S-80149BNPF-JHATFx S-80149BLPF-JFATFx
200 ms typ. S-80149CNPF-JLATFx S-80149CLPF-JJATFx
5.0 V ±2.0% 50 ms typ. S-80150ANPF-JDBTFx S-80150ALPF-JBBTFx
100 ms typ. S-80150BNPF-JHBTFx S-80150BLPF-JFBTFx
200 ms typ. S-80150CNPF-JLBTFx S-80150CLPF-JJBTFx
5.1 V ±2.0% 50 ms typ. S-80151ANPF-JDCTFx S-80151ALPF-JBCTFx
100 ms typ. S-80151BNPF-JHCTFx S-80151BLPF-JFCTFx
200 ms typ. S-80151CNPF-JLCTFx S-80151CLPF-JJCTFx
5.2 V ±2.0% 50 ms typ. S-80152ANPF-JDDTFx S-80152ALPF-JBDTFx
100 ms typ. S-80152BNPF-JHDTFx S-80152BLPF-JFDTFx
200 ms typ. S-80152CNPF-JLDTFx S-80152CLPF-JJDTFx
5.3 V ±2.0% 50 ms typ. S-80153ANPF-JDETFx S-80153ALPF-JBETFx
100 ms typ. S-80153BNPF-JHETFx S-80153BLPF-JFETFx
200 ms typ. S-80153CNPF-JLETFx S-80153CLPF-JJETFx
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 9
Table 2 (3/3)
Detection voltage range Delay time Nch open-drain output products CMOS output products
5.4 V ±2.0% 50 ms typ. S-80154ANPF-JDFTFx S-80154ALPF-JBFTFx
100 ms typ. S-80154BNPF-JHFTFx S-80154BLPF-JFFTFx
200 ms typ. S-80154CNPF-JLFTFx S-80154CLPF-JJFTFx
5.5 V ±2.0% 50 ms typ. S-80155ANPF-JDGTFx S-80155ALPF-JBGTFx
100 ms typ. S-80155BNPF-JHGTFx S-80155BLPF-JFxTFx
200 ms typ. S-80155CNPF-JLGTFx S-80155CLPF-JJGTFx
5.6 V ±2.0% 50 ms typ. S-80156ANPF-JDHTFx S-80156ALPF-JBHTFx
100 ms typ. S-80156BNPF-JHHTFx S-80156BLPF-JFHTFx
200 ms typ. S-80156CNPF-JLHTFx S-80156CLPF-JJHTFx
5.7 V ±2.0% 50 ms typ. S-80157ANPF-JDITFx S-80157ALPF-JBITFx
100 ms typ. S-80157BNPF-JHITFx S-80157BLPF-JFITFx
200 ms typ. S-80157CNPF-JLITFx S-80157CLPF-JJITFx
5.8 V ±2.0% 50 ms typ. S-80158ANPF-JDJTFx S-80158ALPF-JBJTFx
100 ms typ. S-80158BNPF-JHJTFx S-80158BLPF-JFJTFx
200 ms typ. S-80158CNPF-JLJTFx S-80158CLPF-JJJTFx
5.9 V ±2.0% 50 ms typ. S-80159ANPF-JDKTFx S-80159ALPF-JBKTFx
100 ms typ. S-80159BNPF-JHKTFx S-80159BLPF-JFKTFx
200 ms typ. S-80159CNPF-JLKTFx S-80159CLPF-JJKTFx
6.0 V ±2.0% 50 ms typ. S-80160ANPF-JDLTFx S-80160ALPF-JBLTFx
100 ms typ. S-80160BNPF-JHLTFx S-80160BLPF-JFLTFx
200 ms typ. S-80160CNPF-JLLTFx S-80160CLPF-JJLTFx
Remark 1. x: G or U
2. Please select products of environmental code = U for Sn 100%, halogen-free products.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
10 Seiko Instruments Inc.
Pin Configurations
Table 3
Pin No. Pin name Pin description
1 DS*1 ON/OFF switch for delay time
2 VSS GND pin
3 NC*2 No connection
4 OUT Voltage detection output pin
5 VDD Voltage input pin
SOT-23-5
Top view
5 4
3 2 1
Figure 3
*1. Refer to “2. Delay Circuit” in “ Operation” for operation.
*2. The NC pin is electrically open.
The NC pin can be connected to VDD or VSS.
Table 4
Pin No. Pin name Pin description
1 VSS GND pin
2 DS*1 ON/OFF switch for delay time
3 VDD Voltage input pin
4 OUT Voltage detection output pin
SNT-4A
Top view
1 4
2 3
Figure 4
*1. Refer to “2. Delay Circuit” in “ Operation” for operation.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 11
Absolute Maximum Ratings
Table 5 (Ta=25°C unless otherwise specified)
Item Symbol Absolute maximum ratings Unit
Power supply voltage VDD−VSS 12 V
Output voltage Nch open-drain output products VOUT VSS−0.3 to VSS+12
CMOS output products VSS−0.3 to VDD+0.3
Output current IOUT 50 mA
SOT-23-5 PD 250 (When not mounted on board) mW
600*1
SNT-4A 140 (When not mounted on board)
Power
dissipation
300*1
Operating ambient temperature Topr −40 to +85 °C
Storage temperature Tstg −40 to +125
*1. When mounted on board
[Mounted board]
(1) Board size: 114.3 mm × 76.2 mm × t1.6 mm
(2) Board name: JEDEC STANDARD51-7
Caution The absolute maximum ratings are rated values exceeding which the product could suffer
physical damage. These values must therefore not be exceeded under any conditions.
0 50 100 150
600
400
0
Power Dissi
p
ation
(
PD
)
[
mW
]
Ambi en t Tem
p
erature
(
Ta
)
[
°C
]
200
100
300
500
700
SNT-4A
SOT-23-5
Figure 5 Power Dissipation of Package (When Mounted on Board)
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
12 Seiko Instruments Inc.
Electrical Characteristics
Table 6 (Ta=25 °C Unless otherwise specified)
Item Symbol Condition Min. Typ. Max. Unit
Test
circuit
Detection voltage
*1
−
V
DET
—
−
V
DET(S)
×
0.98
−
V
DET(S)
−
V
DET(S)
×
1.02 V 1
Hysteresis width V
HYS
— 30 60 100 mV
I
SS
V
DD
=
3.5 V S-80122 to 26 — 1.3 3.3
μ
A
Current
consumption V
DD
=
4.5 V S-80127 to 39 — 1.5 3.5
V
DD
=
6.5 V S-80140 to 60 — 1.8 4.0
Operating voltage V
DD
— 0.95 — 10.0 V
Output current I
OUT
Output transistor,
Nch, V
OUT
=
0.5 V V
DD
=
1.2 V
S-80122 to 60 0.75 1.5 — mA 2
V
DD
=
2.4 V
S-80127 to 60 3.0 6.0 —
V
DD
=
4.8 V
S-80122 to 39 1.0 2.0 —
Only for CMOS output
products,
Output transistor,
Pch, V
DD
–V
OUT
=
0.5 V V
DD
=
6.0 V
S-80140 to 54 1.25 2.5 —
V
DD
=
8.4 V
S-80155 to 60 1.5 3.0 —
Leakage current I
LEAK
Only for Nch open-drain output products,
Output transistor,
Nch, V
DD
=
10.0 V, V
OUT
=
10.0 V — — 0.1
μ
A
Detection voltage
temperature
coefficient
*2
DET
DET
VTa V
−•Δ
−Δ
Ta
=−
40 °C to
+
85 °C —
±
120
±
360 ppm/
°C 1
Delay time 1 t
D1
V
DD
=−
V
DET
+
1 V, DS pin Low S-801xxAx 32.5 50 72.5 ms
S-801xxBx 65 100 145
S-801xxCx 130 200 290
Delay time 2 t
D2
V
DD
=−
V
DET
+1 V, DS pin High 110 220 330
μ
s 3
Input voltage V
SH
DS pin, V
DD
=
6.0 V 1.0 — — V 4
V
SL
DS pin, V
DD
=
6.0 V — — 0.3
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the
detection voltage range in Table 1 to 2.)
*2. Temperature change ratio for the detection voltage [mV/°C] is calculated using the following equation.
[]
()
[] []
1000Cppm/
VTaΔ
VΔ
V Typ.VCmV/
TaΔ
VΔ
DET
DET
DET(S)
DET ÷°
−
−
×−=°
−
•
3*2**1
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage value
*3. Detection voltage temperature coefficient
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 13
Test Circuits
1.
DS
VDD
OUT
VSS
R*1
100 kΩ
A
V
2.
DS
VDD
OUT
VSS
A
*1. R is unnecessary for CMOS output products.
Figure 6 Figure 7
3.
DS
VDD
OUT
VSS
R*1
100 kΩ
V
4.
DS
VDD
OUT
VSS
R*1
100 kΩ
A
V
*1. R is unnecessary for CMOS output products. *1. R is unnecessary for CMOS output products.
Figure 8 Figure 9
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
14 Seiko Instruments Inc.
Operation
1. Basic Operation: CMOS Output (Active Low)
1-1. When the power supply voltage (VDD) is higher than the release voltage (+VDET), the Nch
transistor is OFF and the Pch transistor is ON to provide VDD (high) at the output. Since the
Nch transistor N1 in Figure 10 is OFF, the comparator input voltage is CBA
DDCB RRR V)RR(
++
•+ .
1-2. When the VDD goes below +VDET, the output provides the VDD level, as long as VDD remains
above the detection voltage (–VDET). When the VDD falls below –VDET (point A in Figure 11),
the Nch transistor becomes ON, the Pch transistor becomes OFF, and the VSS level appears
at the output. At this time the Nch transistor N1 in Figure 10 becomes ON, the comparator
input voltage is changed to BA
DDB RR VR
+
•.
1-3. When the VDD falls below the minimum operating voltage, the output becomes undefined, or
goes to VDD when the output is pulled up to VDD.
1-4. The VSS level appears when VDD rises above the minimum operating voltage. The VSS level still
appears even when VDD surpasses the –VDET, as long as it does not exceed the release
voltage +VDET.
1-5. When VDD rises above +VDET (point B in Figure 11), the Nch transistor becomes OFF and the
Pch transistor becomes ON to provide VDD at the output. The VDD at the OUT pin is delayed for
tD due to the delay circuit.
*
1
DS
*
1
RC
RB
Pch
Nch
VREF
VDD
+
−
RA
N1
VSS
OUT
Delay circuit
*1. Paracitic diode
Figure 10 Operation 1
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 15
A
B
V
DD
t
D
VSS
Minimum operating voltage
Output from OUT pin
V
DD
V
SS
(
1
)
(
2
)
(
3
)
(
5
)
(
4
)
H
yster
i
s
i
s w
id
t
h
(V
HYS
)
Release voltage (+VDET)
Detection voltage (−VDET)
Figure 11 Operation 2
2. Delay Circuit
2-1. Delay Time
The delay circuit delays the output signal from the time at which the power voltage (VDD)
exceeds the release voltage (+VDET) when VDD is turned on. The output signal is not delayed
when the VDD goes below the detection voltage (–VDET). (Refer to Figure 11.)
The delay time (tD) is a fixed value that is determined by a built-in oscillation circuit and
counter.
2-2. DS Pin (ON/OFF Switch Pin for Delay Time)
The DS pin should be connected to Low or High. When the DS pin is High, the output delay
time becomes short since the output signal is taken from the middle of counter circuit (Refer to
Figure 16).
3. Other Characteristics
3-1. Temperature Characteristics of Detection Voltage
The shaded area in Figure 12 shows the temperature characteristics of the detection voltage.
–40 25
+
0.792 mV/°C
2.200
85 Ta
[
°C
]
–
0.792 mV/°C
–VDET [V]
Figure 12 Temperature Characteristics of Detection Voltage (Example for S-80122xxxx)
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
16 Seiko Instruments Inc.
3-2. Temperature Characteristics of Release Voltage
The temperature coefficient Ta
VDET
Δ
+Δ of the release voltage is calculated by the temperature
coefficient Ta
VDET
Δ
−Δ for the detection voltage as follows:
Ta
V
V
V
Ta
VDET
DET
DETDET
Δ
−Δ
×
−
+
=
Δ
+Δ
The temperature coefficients for the release voltage and the detection voltage have the same sign
consequently.
3-3. Temperature Characteristics of Hysteresis Voltage
The temperature characteristics for the hysteresis voltage is expressed as Ta
V
Ta
VDETDET
Δ
−Δ
−
Δ
+Δ and
is calculated as follows:
Ta
V
V
V
Ta
V
Ta
VDET
DET
HYSDETDET
Δ
−Δ
×
−
=
Δ
−Δ
−
Δ
+Δ
Standard Circuit
DS
VDD
OUT
VSS
R
*
1
100 kΩ
*1. R is unnecessary for CMOS output products.
Figure 13
Caution The above connection diagram and constant will not guarantees successful operation.
Perform through using the actual application to set the constant.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 17
Technical Terms
1. Detection Voltage (–VDET), Release Voltage (+VDET)
The detection voltage (–VDET) is a voltage at which the output turns to low. The detection voltage varies
slightly among products of the same specification. The variation of detection voltage between the
specified minimum (–VDET) Min. and the maximum (–VDET) Max. is called the detection voltage range
(Refer to Figure 14).
e.g. For the S-80122AN, the detection voltage lies in the range of 2.156 ≤ (–VDET) ≤ 2.244.
This means that some S-80122ANs have 2.156 V for –VDET and some have 2.244 V.
The release voltage (+VDET) is a voltage at which the output turns to high. The release voltage varies
slightly among products of the same specification. The variation of release voltages between the
specified minimum (+VDET) Min. and the maximum (+VDET) Max. is called the release voltage range
(Refer to Figure 15).
e.g. For the S-80122AN, the release voltage lies in the range of 2.186 ≤ (+VDET) ≤ 2.344.
This means that some S-80122ANs have 2.186 V for +VDET and some have 2.344 V.
Detection voltage
Detection voltage
range
VDD
(−VDET) Min.
(−VDET) Max.
OUT
Delay time
Release voltage
Release voltage
range
VDD
(+VDET) Min.
(+VDET) Max.
OUT
Figure 14 Detection Voltage Figure 15 Release Voltage
Remark Although the detection voltage and release voltage overlap in the range of 2.186 V to 2.244 V,
+VDET is always larger than –VDET.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
18 Seiko Instruments Inc.
2. Hysteresis Width (VHYS)
Hysteresis width is the voltage difference between the detection voltage and the release voltage
(The voltage at point B−The voltage at point A=VHYS in Figure 11). The existence of the hysteresis
width prevents malfunction caused by noise on input signal.
3. Delay Time (tD)
Delay time is a time internally measured from the instant at which input voltage to the VDD pin
exceeds the release voltage (+VDET) to the point at which the output of the OUT pin inverts. The
delay time is fixed in each series distinguished by A, B and C.
S-801xxAx series: typ. 50 ms
S-801xxBx series: typ. 100 ms
S-801xxCx series: typ. 200 ms
The output of the OUT pin can be inverted in a short delay time (tD2) by setting the DS pin High (Refer
to Figure 16).
tD2
tD1
VDD
at DS
=
”H” OUT
V
+VDET
Figure 16
4. Through-type Current
The through-type current refers to the current that flows instantaneously at the time of detection and
release of a voltage detector. The through-type current flows at a frequency of 20 kHz during release
delay time since the internal logic circuit operates.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 19
5. Oscillation
In applications where a resistor is connected to the voltage detector input (Figure 17), taking a
CMOS active low products for example, the through-type current which is generated when the
output goes from low to high (release) causes a voltage drop equal to [through-type current] × [input
resistance] across the resistor. When the input voltage drops below the detection voltage (–VDET) as
a result, the output voltage goes to low level. In this state, the through-type current stops and its
resultant voltage drop disappears, and the output goes from low to high. The through-type current is
again generated, a voltage drop appears, and repeating the process finally induces oscillation.
OUT
VSS
VDD
RB
RA
VIN S-801
Figure 17 Example for Bad Implementation of Input Voltage Divider
Precautions
• In the S-801 series products, the through-type current flows at a frequency of 20 kHz approximately
during the delay time since the internal oscillator circuit and counter timer operate at voltage release.
High impedance in the input may cause oscillation by the through-type current. When the input
impedance is high, insert a capacitor between VDD pin and VSS pin to prevent oscillation.
• Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in
electrostatic protection circuit.
• In CMOS output products of the S-801 Series, the through-type current flows at detection and release. If
the impedance is high, oscillation may occur due to the voltage drop by the through-type current during
releasing.
• When designing for mass production using an application circuit described herein, the product deviation
and temperature characteristics should be taken into consideration. SII shall not bear any responsibility
for the patents on the circuits described herein.
• SII claims no responsibility for any and all disputes arising out of or in connection with any infringement of
the products including this IC upon patents owned a third party.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
20 Seiko Instruments Inc.
Typical Characteristics (Typical Data)
1. Detection Voltage (VDET) - Temperature (Ta)
S-80122AL S-80160AL
2.1
2.2
2.3
2.4
−40 −20 0 20 40 60 80 100
Ta [°C]
VDET [V]
VDET (+)
VDET (−)
5.8
6.0
6.2
6.4
−40 −20 0 20 40 60 80 100
Ta [°C)]
VDET [V]
VDET (+)
VDET (−)
2. Hysteresis Voltage Width (VHYS) - Temperature (Ta)
S-80122AL S-80160AL
30
40
50
60
70
80
90
100
−40 −20 0 20 40 60 80 100
Ta [°C]
VHYS [mV]
30
40
50
60
70
80
90
100
−
40
−
20 0 20 40 60 80 100
Ta [°C]
VHYS [mV]
3. Current Consumption (ISS) - Input Voltage (VDD)
(a) S-80122AL (b) S-80129AL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 2 4 6 8 10
VDD [V]
ISS [
μ
A
]
Ta=25°C
2.9 μA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 2 4 6 8 10
VDD [V]
ISS [
μ
A
]
Ta
=
25°C
3.3 μA
(c) S-80130AL (d) S-80160AL
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 2 4 6 8 10
VDD [V]
ISS [
μ
A
]
Ta=25°C
5.0
μ
A
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0 2 4 6 8 10
VDD [V]
ISS [
μ
A
]
Ta
=
25°C
20 μA
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 21
4. Current Consumption (ISS) - Temperature (Ta)
(a) S-80122AL (b) S-80129AL
0.0
1.0
2.0
3.0
4.0
5.0
−40 −20 0 20 40 60 80 100
Ta [°C]
ISS [
μ
A
]
VDD=3.5 V
0.0
1.0
2.0
3.0
4.0
5.0
−
40
−
20 0 20 40 60 80 100
Ta [°C]
ISS [
μ
A
]
VDD=4.5 V
(c) S-80130AL (d) S-80160AL
0.0
1.0
2.0
3.0
4.0
5.0
−40 −20 0 20 40 60 80 100
Ta [°C]
ISS [
μ
A
]
VDD=4.5 V
0.0
1.0
2.0
3.0
4.0
5.0
−
40
−
20 0 20 40 60 80 100
Ta [°C]
ISS [
μ
A
]
VDD=6.5 V
5. Nch Transistor Output Current (IOUT) -VOUT 6. Pch Transistor Output Current (IOUT) - (VDD-VOUT)
S-80160AL S-80122AL
0
10
20
30
40
50
60
70
0 2 4 6 8 10
VOUT [V]
IOUT [mA]
Ta
=
25°C
2 V
2.4 V
4 V
5.5 V
VDD=1 V, 1.2 V
0
10
20
30
40
0246 8 10
VDD-VOUT [V]
IOUT [mA]
Ta
=
25°C
VDD
=
4 V 4.8 V 6 V
6.5 V
10 V
8 V
7. Nch Transistor Output Current (IOUT) - Input
Voltage (VDD) 8. Pch transistor Output Current (IOUT) - Input
Voltage (VDD)
S-80160AL S-80122AL
0
5
10
15
20
25
0 2 4 6 8 10
VDD [V]
IOUT [mA]
VDS=0.5 V
Ta= −40°C
85°C
25°C
0
1
2
3
4
5
0 2 4 6 8 10
VDD [V]
IOUT [mA]
VDS
=
0.5 V
Ta
=
−
40°C
85°C
25°C
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
22 Seiko Instruments Inc.
9. Minimum Operating Voltage - Input Voltage (VDD)
S-80122AN
0
0.1
0.2
0.3
0.4
0.5
0.6
0 0.5 1 1.5
VDD [V]
VOUT [V]
Pull-up, VDD:100 k
Ω
85°C
25°C
Ta= −40°C
10. Threshold Voltage of DS Pin - Temperature (Ta) 11. Threshold Voltage of DS Pin - Input Voltage (VDD)
S-80122AL S-80122AL
0
0.2
0.4
0.6
0.8
1
−40 −20 0 20 40 60 80 100
Ta [°C]
Threshold [V]
VDD=6.0 V
0
0.2
0.4
0.6
0.8
1
0 2 4 6 8 10
VDD [V]
Threshold [V]
Ta
=
−
40°C
25°C 85°C
12. Delay Time 1 - Temperature (Ta)
S-80122CL S-80160CL
0
50
100
150
200
250
300
−40 −20 0 20 40 60 80 100
Ta [ °C]
Delay time [ms]
VDD=3.2 V
0
50
100
150
200
250
300
−40 −20 0 20 40 60 80 100
Ta [°C]
Delay time [ms]
VDD=7.0 V
13. Delay Time 1 - Input Voltage (VDD)
S-80122CL
0
50
100
150
200
250
300
2 4 6 8 10
VDD [V]
Delay time [ms]
Ta
=
25°C
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 23
14. Delay Time 2 - Temperature (Ta)
S-80122AL S-80160AL
0
50
100
150
200
250
300
350
400
−40 −20 0 20 40 60 80 100
Ta [ °C]
Delay time [μs]
VDD=3.2 V
0
50
100
150
200
250
300
350
400
−40 −20 0 20 40 60 80 100
Ta [°C]
Delay time [μs]
VDD
=
7.0 V
15. Delay Time 2 - Input Voltage (VDD)
S-80122AN
0
50
100
150
200
250
300
350
400
2 4 6 8 10
VDD [V]
Delay time [μs]
Ta=25°C
VDD
OUT
VSS
DS
*1
VDD
S-801
Series
V
V
R
*2
100 kΩ
VDD
×
90 %
VSS
VIH
VIL tD
VIH=10 V, VIL=0.95 V
INPUT VOLTAGE
OUTPUT VOLTAGE
*1. Set to VDD or VSS.
*2. R is not necessary for CMOS output products.
Figure 18 Measurment Condition for Delay Time Figure 19 Measurment Circuit for Delay Time
Caution The above connection diagram will not guarantees successful operation. Perform through using
the actual application to set the constant.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
S-801 Series Rev.4.0_00
24 Seiko Instruments Inc.
16. Response Time - Load Capacitor (COUT)
S-80122AL S-80122AN
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
COUT [μF]
Response time [ms]
Ta=25°C
tPLH
(Delay time2)
tPHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
COUT [
μ
F]
Response time [ms]
Ta=25°C
tPLH
(Delay time2)
tPHL
S-80160AL S-80160AN
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1
COUT [
μ
F]
Response time [ms]
Ta=25°C
tPLH
(Delay time2)
tPHL
0.001
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1
COUT [
μ
F]
Response time [ms]
Ta=25°C
tPLH
(Delay time2)
tPHL
VDD OUT
DS
VSS
VDD
S-801
Series
V
R
*1
100 kΩ
V
VDD
×
90 %
VDD × 10 %
VIH
INPUT VOLT AGE
OUTPUT VOLTAGE
VIL
VDD
tPHL tPLH
VIH=10 V, VIL=0.95 V
1 μs
1 μs
*1. R is not necessary for CMOS output products.
Figure 20 Measurment Condition for Response Time Figure 21 Measurment Circuit for Response Time
Caution The above connection diagram will not guarantees successful operation. Perform through using
the actual application to set the constant.
ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR WITH DELAY CIRCUIT (INTERNAL
DELAY TIME SETTING)
Rev.4.0_00 S-801 Series
Seiko Instruments Inc. 25
Application Circuit Examples
Microcomputer Reset Circuits
If the power supply voltage to a microcomputer falls below the specified level, an unspecified
operation may be performed or the contents of the memory register may be lost. When power supply
voltage returns to normal, the microcomputer needs to be initialized before normal operations can be
done. Reset circuits protect microcomputers in the event of current being momentarily switched off
or lowered.
Reset circuits shown in Figures 22 to 23 can be easily constructed with the help of the S-801 series
that has low operating voltage, a high-precision detection voltage, hysteresis, and a built-in delay
circuit.
VSS
VDD
Microcomputer
S-
801xxAL
VSS
(Nch open-drain output products only.)
VDD1 VDD2
Microcomputer
S-
801xxAN
Figure 22 Ret Circuit (S-801xxAL) Figure 23 Reset Circuit (S-801xxAN)
Caution The above connection diagram will not guarantees successful operation. Perform
through using the actual application to set the constant.
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
2.9±0.2
1.9±0.2
0.95±0.1
0.4±0.1
0.16 +0.1
-0.06
123
4
5
No. MP005-A-P-SD-1.2
MP005-A-P-SD-1.2
SOT235-A-PKG Dimensions
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
ø1.5 +0.1
-0 2.0±0.05
ø1.0 +0.2
-0 4.0±0.1
1.4±0.2
0.25±0.1
3.2±0.2
123
45
No. MP005-A-C-SD-2.1
MP005-A-C-SD-2.1
SOT235-A-Carrier Tape
Feed direction
4.0±0.1(10 pitches:40.0±0.2)
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 3,000
No. MP005-A-R-SD-1.1
MP005-A-R-SD-1.1
SOT235-A-Reel
Enlarged drawing in the central part
1.2±0.04
0.65
0.2±0.05
0.48±0.02
0.08
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-PKG Dimensions
PF004-A-P-SD-4.0
No. PF004-A-P-SD-4.0
+0.05
-0.02
12
3
4
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
PF004-A-C-SD-1.0
SNT-4A-A-Carrier Tape
Feed direction
4.0±0.1
2.0±0.05
4.0±0.1
ø1.5 +0.1
-0
ø0.5
1.45±0.1 0.65±0.05
0.25±0.05
1
2
34
5°
No. PF004-A-C-SD-1.0
+0.1
-0
12.5max.
9.0±0.3
ø13±0.2
(60°) (60°)
QTY. 5,000
No. PF004-A-R-SD-1.0
PF004-A-R-SD-1.0
Enlarged drawing in the central part
No.
TITLE
SCALE
UNIT mm
Seiko Instruments Inc.
SNT-4A-A-Reel
No.
TITLE
SCALE
UNIT mm
SNT-4A-A-Land Recommendation
Seiko Instruments Inc.
PF004-A-L-SD-4.0
No. PF004-A-L-SD-4.0
0.3
0.35
0.52
1.16
0.52
Caution 1. Do not do silkscreen printing and solder printing under the mold resin of the package.
2. The thickness of the solder resist on the wire pattern under the package should be 0.03 mm
or less from the land pattern surface.
3. Match the mask aperture size and aperture position with the land pattern.
4. Refer to "SNT Package User's Guide" for details.
1. (0.25 mm min. / 0.30 mm typ.)
2. (1.10 mm ~ 1.20 mm)
1
2
0.03 mm
1. Pay attention to the land pattern width (0.25 mm min. / 0.30 mm typ.).
2. Do not widen the land pattern to the center of the package (1.10 mm to 1.20 mm).
1.
2.
※1. 䇋⊼ᛣ⛞Ⲭᓣⱘᆑᑺ(0.25 mm min. / 0.30 mm typ.)DŽ
※2. 䇋䇋࣓ᇕ㺙Ё䯈ᠽሩ⛞Ⲭᓣ (1.10 mm ~ 1.20 mm)DŽ
⊼ᛣ1. 䇋࣓㛖ൟᇕ㺙ⱘϟ䴶ࠋϱ㔥ǃ⛞䫵DŽ
2. ᇕ㺙ϟǃᏗ㒓Ϟⱘ䰏⛞㝰ᑺ (Ң⛞Ⲭᓣ㸼䴶䍋) 䇋ࠊ0.03 mmҹϟDŽ
3. 㝰ⱘᓔষሎᇌᓔষԡ㕂䇋Ϣ⛞Ⲭᓣᇍ唤DŽ
4. 䆺㒚ݙᆍ䇋খ䯙 "SNTᇕ㺙ⱘᑨ⫼ᣛ"DŽ
www.sii-ic.com
• The information described herein is subject to change without notice.
• Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein
whose related industrial properties, patents, or other rights belong to third parties. The application circuit
examples explain typical applications of the products, and do not guarantee the success of any specific
mass-production design.
• When the products described herein are regulated products subject to the Wassenaar Arrangement or other
agreements, they may not be exported without authorization from the appropriate governmental authority.
• Use of the information described herein for other purposes and/or reproduction or copying without the
express permission of Seiko Instruments Inc. is strictly prohibited.
• The products described herein cannot be used as part of any device or equipment affecting the human
body, such as exercise equipment, medical equipment, security systems, gas equipment, vehicle equipment,
in-vehicle equipment, aviation equipment, aerospace equipment, and nuclear-related equipment, without prior
written permission of Seiko Instruments Inc.
• The products described herein are not designed to be radiation-proof.
• Although Seiko Instruments Inc. exerts the greatest possible effort to ensure high quality and reliability, the
failure or malfunction of semiconductor products may occur. The user of these products should therefore
give thorough consideration to safety design, including redundancy, fire-prevention measures, and
malfunction prevention, to prevent any accidents, fires, or community damage that may ensue.
