© Semiconductor Components Industries, LLC, 2009
August, 2009 Rev. 5
1Publication Order Number:
BCW68GLT1/D
BCW68GLT1G
General Purpose Transistor
PNP Silicon
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 45 Vdc
CollectorBase Voltage VCBO 60 Vdc
EmitterBase Voltage VEBO 5.0 Vdc
Collector Current Continuous IC800 mAdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to
stresses above the Recommended Operating Conditions may affect device
reliability.
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD225
1.8
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA 556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD300
2.4
mW
mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA 417 °C/W
Junction and Storage Temperature TJ, Tstg 55 to +150 °C
1. FR5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
SOT23
CASE 318
STYLE 6
http://onsemi.com
DG = Specific Device Code
M = Date Code*
G= PbFree Package
MARKING DIAGRAM
1
2
3
Device Package Shipping
ORDERING INFORMATION
BCW68GLT1G SOT23
(PbFree)
3000 / Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DG MG
G
COLLECTOR
3
1
BASE
2
EMITTER
(Note: Microdot may be in either location)
BCW68GLT3G SOT23
(PbFree)
10000 / Tape & Reel
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
BCW68GLT1G
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, IB = 0) V(BR)CEO 45 Vdc
CollectorEmitter Breakdown Voltage (IC = 10 mAdc, VEB = 0) V(BR)CES 60 Vdc
EmitterBase Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 Vdc
Collector Cutoff Current
(VCE= 45 Vdc, IE = 0)
(VCE= 45 Vdc, IB = 0, TA = 150°C)
ICES
20
10
nAdc
mAdc
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0) IEBO 20 nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 300 mAdc, VCE = 1.0 Vdc)
hFE
120
160
60
400
CollectorEmitter Saturation Voltage (IC = 300 mAdc, IB = 30 mAdc) VCE(sat) 1.5 Vdc
BaseEmitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VBE(sat) 2.0 Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
fT100 MHz
Output Capacitance
(VCB= 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo 18 pF
Input Capacitance
(VEB= 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo 105 pF
Noise Figure
(IC= 0.2 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF 10 dB
BCW68GLT1G
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3
PACKAGE DIMENSIONS
SOT23 (TO236)
CASE 31808
ISSUE AN
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 31801 THRU 07 AND 09 OBSOLETE, NEW
STANDARD 31808.
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104HE
0.35 0.54 0.69 0.014 0.021 0.029
c
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BCW68GLT1/D
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