MPS918
NPN Silicon
Amplifier Transistor
Features
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 15 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 3.0 V
ICCollector Current, Continuous 50 mA
TJOperating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
P
DTotal Device Dissipation
Derate above 25OC
350
2.8
mW
mW/OC
P
DTotal Device Dissipation
Derate above 25OC
0.85
6.8
W
mW/OC
RJC Thermal Resistance, Junction to Case 147 OC/W
RJA Thermal Resistance, Junction to Ambient 357 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CE O Collector-Emitter Breakdown Voltage (2)
(I
C=3.0mAdc, IE=0) 15 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=1.0uAdc, IE=0) 30 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=10uAdc, IC=0) 3.0 --- Vdc
I
CBO Collector Cutoff Current
(VCB=15Vdc, I
E=0) --- 10 nAdc
ON CHARACTERISTICS
hFE DC Current Gain
(VCE
=1.0Vdc, IC=3.0mAdc) 20 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=10mAdc, IB=1.0mAdc) --- 0.4 Vdc
VBE(sat) Base-Emitter On Voltage
(I
C=10mAdc, IB=1.0mAdc) --- 1.0 Vdc
(1) RJA is measured with the device soldered into a typical printed circuit board.
(
2
)
Pulse Test: Pulse Width<300us, Dut
y
C
y
cle<1.0%
TO-92
AE
B
C
D
G
(1)
• Simplifies Circuit Design
• Reduces Component Count
Revision: 6 2010/08/18
omponents
20736 Marilla Street Chatsworth
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$% !"#
MCC
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
E .130 .160 3.30 3.96
G.096 .1042.442.64
TM
Micro Commercial Components
EBC
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
xMarking:MPS918
www.mccsemi.com
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• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Symbol Parameter Min Max Units
SMALL-SIGNAL CHARACTERISTICS
fTCurrent-Gain—Bandwidth Product(2)
(IC=4.0mAdc, VCE=10Vdc, f=100MHz) 600 --- MHz
Cobo
Output Capacitance
(VCB=0, IE=0, f=1.0MHz)
(VCB=10Vdc, I
E=0, f=1.0MHz)
---
---
3.0
1.7
pF
Cibp Input Capacitance
(VEB=0.5Vdc, I
C=0, f=1.0MHz) --- 2.0 pF
hfe Small- Signal Current Gain
(IC=8.0mAdc, VCE
=10Vdc, f=1.0KHz) 20 250 ---
NF Noise Figure
(IC=1.0mAdc, VCE
=6.0Vdc, RS=400OHMS, f=60MHz) --- 6.0 dB
* Pulse Test: Pulse Width<300us, Duty Cycle<1.0%
MPS918 MCC
Revision: 6 2010/08/18
TM
Micro Commercial Components
www.mccsemi.com
2 of 3
MCC
Revision: 6 2010/08/18
TM
Micro Commercial Components
www.mccsemi.com
3 of 3
Ordering Information
Device Packing
(Part Number)-AP
(Part Number)-BP Bulk;1Kpcs/Bag
Ammo Packing;2Kpcs/AmmoBox
products are represented on our website, harmless against all damages.
***LIFE SUPPORT***
***IMPORTANT NOTICE***
without the expresse written approval of Micro Commercial Components Corporation.
MCC's products are not authorized for use as critical components in life support devices or systems
Micro Commercial Components Corp .reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp .does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
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