MPS918
NPN Silicon
Amplifier Transistor
Features
Maximum Ratings
Symbol Rating Rating Unit
VCEO Collector-Emitter Voltage 15 V
VCBO Collector-Base Voltage 30 V
VEBO Emitter-Base Voltage 3.0 V
ICCollector Current, Continuous 50 mA
TJOperating Junction Temperature -55 to +150 OC
TSTG Storage Temperature -55 to +150 OC
Thermal Characteristics
Symbol Rating Max Unit
P
DTotal Device Dissipation
Derate above 25OC
350
2.8
mW
mW/OC
P
DTotal Device Dissipation
Derate above 25OC
0.85
6.8
W
mW/OC
RJC Thermal Resistance, Junction to Case 147 OC/W
RJA Thermal Resistance, Junction to Ambient 357 OC/W
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol Parameter Min Max Units
OFF CHARACTERISTICS
V(BR)CE O Collector-Emitter Breakdown Voltage (2)
(I
C=3.0mAdc, IE=0) 15 --- Vdc
V(BR)CBO Collector-Base Breakdown Voltage
(I
C=1.0uAdc, IE=0) 30 --- Vdc
V(BR)EBO Emitter-Base Breakdown Voltage
(I
E=10uAdc, IC=0) 3.0 --- Vdc
I
CBO Collector Cutoff Current
(VCB=15Vdc, I
E=0) --- 10 nAdc
ON CHARACTERISTICS
hFE DC Current Gain
(VCE
=1.0Vdc, IC=3.0mAdc) 20 --- ---
VCE(sat) Collector-Emitter Saturation Voltage
(I
C=10mAdc, IB=1.0mAdc) --- 0.4 Vdc
VBE(sat) Base-Emitter On Voltage
(I
C=10mAdc, IB=1.0mAdc) --- 1.0 Vdc
(1) RJA is measured with the device soldered into a typical printed circuit board.
2
Pulse Test: Pulse Width<300us, Dut
C
cle<1.0%
TO-92
AE
B
C
D
G
(1)
• Simplifies Circuit Design
• Reduces Component Count
Revision: 6 2010/08/18
omponents
20736 Marilla Street Chatsworth
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MCC
DIMENSIONS
INCHES MM
DIM MIN MAX MIN MAX NOTE
A .170 .190 4.33 4.83
B .170 .190 4.30 4.83
C .550 .590 13.97 14.97
D .010 .020 0.36 0.56
E .130 .160 3.30 3.96
G.096 .1042.442.64
TM
Micro Commercial Components
EBC
x Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
xMarking:MPS918
www.mccsemi.com
1 of 3
• Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)