Si2301BDS Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.100 @ VGS = - 4.5 V - 2.4 0.150 @ VGS = - 2.5 V - 2.0 VDS (V) - 20 TO-236 (SOT-23) G 1 3 S Ordering Information: Si2301BDS-T1 D 2 Top View Si2301 BDS (L1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)b TA= 25_C TA= 70_C Pulsed Drain Currenta ID Continuous Source Current (Diode Conduction)b IS TA= 25_C Power Dissipationb TA= 70_C Operating Junction and Storage Temperature Range PD V - 2.4 - 2.2 - 1.9 IDM - 1.8 A - 10 - 0.72 - 0.6 0.9 0.7 0.57 0.45 TJ, Tstg Unit W - 55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc RthJA Typical Maximum 120 145 140 175 Unit _C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72066 S-31990--Rev. B, 13-Oct-03 www.vishay.com 1 Si2301BDS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min V(BR)DSS VGS = 0 V, ID = - 250 mA - 20 VGS(th) VDS = VGS, ID = - 250 mA - 0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V Zero Gate Voltage Drain Current IDSS On State Drain Currenta On-State ID(on) D( ) Typ Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltage - 0.95 "100 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55_C - 10 VDS v - 5 V, VGS = - 4.5 V -6 VDS v - 5 V, VGS = - 2.5 V -3 nA mA A VGS = - 4.5 V, ID = - 2.8 A 0.080 0.100 VGS = - 2.5 V, ID = - 2.0 A 0.110 0.150 gfs VDS = - 5 V, ID = - 2.8 A 6.5 VSD IS = - 0.75 A, VGS = 0 V - 0.80 - 1.2 4.5 10 rDS(on) DS( ) V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = - 6 V, VGS = - 4.5 V ID ^ - 2.8 A 0.7 Gate-Drain Charge Qgd 1.1 Input Capacitance Ciss 375 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = - 6 V, VGS = 0, f = 1 MHz nC 95 pF 65 Switchingc Turn On Time Turn-On Turn-Off Time td(on) tr td(off) VDD = - 6 V, RL = 6 W ID ^ - 1.0 10A A, VGEN = - 4.5 45V RG = 6 W tf 20 30 40 60 30 45 20 30 ns Notes a. Pulse test: PW v300 ms duty cycle v2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. S FaxBack 408-970-5600 www.vishay.com 2 Document Number: 72066 S-31990--Rev. B, 13-Oct-03 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 10 VGS = 5 thru 2.5 V TC = - 55_C 8 I D - Drain Current (A) I D - Drain Current (A) 8 Transfer Characteristics 10 2V 6 4 1.5 V 2 25_C 6 125_C 4 2 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current 0.4 0.3 0.2 VGS = 2.5 V 0.1 4 6 8 200 Crss 0 10 4 8 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge 1.6 VDS = 10 V ID = 2.8 A On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 2.8 A 4 1.4 r DS(on)- On-Resistance ( W ) (Normalized) V GS - Gate-to-Source Voltage (V) 3.0 Coss ID - Drain Current (A) 5 2.5 Ciss 400 0 2 2.0 600 VGS = 4.5 V 0.0 0 1.5 Capacitance 800 C - Capacitance (pF) r DS(on)- On-Resistance ( W ) 0.5 1.0 VGS - Gate-to-Source Voltage (V) 3 2 1 0 0 1 2 3 Qg - Total Gate Charge (nC) Document Number: 72066 S-31990--Rev. B, 13-Oct-03 4 5 1.2 1.0 0.8 0.6 - 50 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 On-Resistance vs. Gate-to-Source Voltage 0.6 r DS(on)- On-Resistance ( W ) I S - Source Current (A) 0.5 TJ = 150_C 1 TJ = 25_C 0.4 ID = 2.8 A 0.3 0.2 0.1 0.0 0.1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 1 VSD - Source-to-Drain Voltage (V) 4 5 Single Pulse Power 10 0.3 8 0.2 6 Power (W) V GS(th) Variance (V) 3 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 2 ID = 250 mA 0.1 4 0.0 TA = 25_C 2 - 0.1 - 0.2 - 50 0 - 25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (_C) 10 100 1000 Time (sec) 100 Safe Operating Area 10 ms 100 ms 10 I D - Drain Current (A) 1 1 ms 1 0.1 10 ms TA = 25_C Single Pulse 100 ms dc, 100 s, 10 s, 1 s 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 72066 S-31990--Rev. B, 13-Oct-03 Si2301BDS Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 62.5_C/W 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10 -4 10 -3 10 -2 10 -1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72066 S-31990--Rev. B, 13-Oct-03 www.vishay.com 5