© 2019 IXYS All rights reserved 1 - 3
DS 17 DSI 17
DSA 17 DSAI 17
IXYS reserves the right to change limits, test conditions and dimensions
Replacements see page 3
20190130b
phase-out
VRSM V(BR)min ① VRRM Anode Cathode
V V V on stud on stud
1300 - 1200 DS 17-12A DSI 17-12A
1300 1300 1200 DSA 17-12A DSAI 17-12A
1700 1750 1600 DSA 17-16A DSAI 17-16A
1900 1950 1800 DSA 17-18A DSAI 17-18A
① Only for Avalanche Diodes
Symbol Test Conditions Maximum Ratings
IF(RMS) TVJ = TVJM 40 A
IF(AV)M Tcase = 125°C; 180° sine 25 A
PRSM DSA(I) types, TVJ = TVJM, tp = 10 µs 7 kW
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 370 A
VR = 0 t = 8.3 ms (60 Hz), sine 400 A
TVJ = TVJM t = 10 ms (50 Hz), sine 300 A
VR = 0 t = 8.3 ms (60 Hz), sine 320 A
I2t TVJ = 45°C t = 10 ms (50 Hz), sine 680 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 660 A2s
TVJ = TVJM t = 10 ms (50 Hz), sine 450 A2s
VR = 0 t = 8.3 ms (60 Hz), sine 430 A2s
TVJ -40...+180 °C
TVJM 180 °C
Tstg -40...+180 °C
Md Mounting torque 2.2-2.8 Nm
19-25 lb.in.
Weight 6 g
VRRM = 1200-1800 V
IF(RMS) = 40 A
IF(AV)M = 25 A
Features
● International standard package,
JEDEC DO-203 AA (DO-4)
● Planar glassivated chips
Applications
● Supplies for DC power equipment
● DC supply for PWM inverter
● Field supply for DC motors
● Battery DC power supplies
Advantages
● Space and weight savings
● Simple mounting
● Improved temperature and power
cycling
● Reduced protection circuits
Symbol Test Conditions Characteristic Values
IR TVJ = TVJM; VR = VRRM ≤ 4 mA
VF IF = 55 A; TVJ = 25°C ≤ 1.36 V
VT0 For power-loss calculations only 0.85 V
rT TVJ = TVJM 8 mΩ
RthJC DC current 1.5 K/W
RthJH DC current 2.1 K/W
dS Creepage distance on surface 2.05 mm
dA Strike distance through air 2.05 mm
a Max. allowable acceleration 100 m/s2
Dimensions in mm (1 mm = 0.0394")
Data according to IEC 60747
Rectifi er Diode
Avalanche Diode
A = Anode C = Cathode
DO-203 AA
10-32UNF
DS DSI
DSA DSAI
C
A
A
C
7.8
10.3
2.3
0.5
SW 11
max.
20.3211
0.5
max.
10.2
3.3 2
max.
1.5
4.4
2.6
Ø 3.5
10-32 UNF
4
© 2019 IXYS All rights reserved 2 - 3
DS 17 DSI 17
DSA 17 DSAI 17
IXYS reserves the right to change limits, test conditions and dimensions 20190130b
phase-out
10-3 10-2 10-1 100
0
100
200
300
400
2 3 4 5 6 7 8 91 10
200
400
600
800
100
1000
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
20
40
60
80
100
0 10 20 30 40 50
0
10
20
30
40
50
0 50 100 150 200
0
10-3 10-2 10-1 100101102
0
1
2
I2t
IFSM
A
IF
A
VFt
s
t
ms
PF
W
IF(AV)M
A
Tamb
°C
t
s
ZthJH
K/W
A2s
0 50 100 150
0
10
20
30
40
IF(AV)M
Tc
A
°C
V
Fig. 6 Transient thermal impedance junction to heatsink
Fig. 1 Forward characteristics Fig. 2 Surge overload current
IFSM: crest value, t: duration
Fig. 3 I2t versus time (1-10 ms)
Fig. 4 Power dissipation versus forward current and ambient temperature Fig. 5 Max. forward current at case
temperature 180° sine
RthJH for various conduction angles d:
d RthJH (K/W)
DC 2.10
180° 2.23
120° 2.33
60° 2.53
30° 2.72
Constants for ZthJH calculation:
i Rthi (K/W) ti (s)
1 0.1006 0.0021
2 0.5311 0.0881
3 0.8683 2.968
4 0.600 3.20
typ. lim.
TVJ= 180°C
TVJ= 25°C
TVJ = 180°C
TVJ = 45°C
VR = 0 V
RthJA :
2.8 K/W
3.2 K/W
4,8 K/W
6.3 K/W
8.5 K/W
Cu 80x80
DC
180° sin
120°
60°
30°
50Hz, 80% VRRM
TVJ = 45°C
TVJ = 180°C
ase
© 2019 IXYS All rights reserved 3 - 3
DS 17 DSI 17
DSA 17 DSAI 17
IXYS reserves the right to change limits, test conditions and dimensions 20190130b
phase-out
Type Replacements
DSI17-12A DSI2x55-12A; DMA50I1200HA
DSAI17-12A DSI2x55-12A; DMA50I1200HA
DSAI17-16A DSI2x55-12A; DMA50I1200HA
DSAI17-18A contact factory
DS17-12A DSI2x55-12A; DMA50I1200HA
DSA17-12A DSI2x55-12A; DMA50I1200HA
DSA17-16A DSI2x55-12A; DMA50I1200HA
DSA17-18A contact factory
