2SK2653-01R FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3PF Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=25C unless otherwise specified) Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Repetitive or non-repetitive Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 PD Tch Tstg Ratings 900 6 24 35 6 150.5 80 +150 -55 to +150 Unit V A A V A mJ W C C Drain(D) ew n for *1 L=7.67mH, Vcc=90V . de Gate(G) n sig Source(S) < *2 Tch=150C nd e mm Electrical characteristics (Tc =25C unless otherwise specified) Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current N Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge eco r ot Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD t rr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=900V VGS=0V VGS=35V VDS=0V ID=3.0A VGS=10V Min. 900 3.5 Tch=25C Tch=125C ID=3.0A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=6A VGS=10V 2.0 RGS=10 L=100 H Tch=25C IF=2xIDR VGS=0V Tch=25C IF=IDR VGS=0V -di/dt=100A/s Tch=25C Typ. Max. 4.0 4.5 10 500 0.2 1.0 10 100 1.87 2.50 4.0 900 1350 130 200 70 110 25 40 80 120 80 120 45 70 6 1.0 900 10 1.5 Units V V A mA nA S pF ns A V ns C Thermalcharacteristics Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient http://store.iiic.cc/ Min. Typ. Max. 1.56 30.0 Units C/W C/W 1 2SK2653-01R FUJI POWER MOSFET Characteristics Power Dissipation PD=f(Tc) 100 Safe operating area ID=f(VDS):D=0.01,Tc=25C 80 10 t=0.01 s 1 1 s DC 10 s 100 s ID [A] PD [W] 60 40 10 0 1ms 10 10ms t -1 t D= T 20 100ms T 0 0 50 100 10 150 -2 10 0 10 1 10 o Tc [ C] Typical output characteristics 10 3 Typical transfer characteristic ID=f(VDS):80s Pulse test,Tch=25C ID=f(VGS):80s Pulse test,VDS=25V,Tch=25C 12 11 VGS=20V 10V 8V 10 10 8 ID [A] 6 7V 5 10 nd e mm 4 6.5V 3 10 2 o c e r n sig ew n for 7 . de 1 9 ID [A] 2 VDS [V] 0 -1 6V 1 ot 0 0 5 10 N 15 20 5.5V 5V 25 30 10 35 -2 0 1 2 3 4 VDS [V] 5 6 7 8 9 10 VGS [V] RDS(on)=f(ID):80s Pulse test, Tch=25C Typical drain-source on-state resistance Typical forward transconductance gfs=f(ID):80s Pulse test,VDS=25V,Tch=25C 12 VGS= 11 5V 5.5V 6V 6.5V 7V 10 10 9 1 gfs [s] RDS(on) [ ] 8 10 0 7 6 5 4 8V 10V 3 20V 2 1 10 0 -1 10 -1 10 0 10 1 0 1 2 3 4 5 6 7 8 9 10 11 12 ID [A] ID [A] http://store.iiic.cc/ 2 2SK2653-01R FUJI POWER MOSFET Drain-source on-state resistance RDS(on)=f(Tch):ID=3A,VGS=10V 8 Gate threshold voltage VGS(th)=f(Tch):ID=1mA,VDS=VGS 6.0 5.0 6 max. 4 VGS(th) [V] RDS(on) [ ] 4.0 max. typ. min. 3.0 2.0 typ. 2 1.0 0 0.0 -50 0 50 100 150 -50 0 50 100 150 o Tch [ C] o Tch [ C] Typical gate charge characteristic VGS=f(Qg):ID=6A,Tch=25C 40 800 Vcc=720V 0V 18 c= 0V c 5 V 4 0V 72 700 600 10n Typical capacitances C=f(VDS):VGS=0V,f=1MHz 30 20 400 e m m 15 300 200 180V 10 100 0 0 20 40 60 ot N 80 100 o c e r 120 140 Ciss nd Coss 100p Crss 5 0 160 10p 10 -2 10 -1 10 Qg [nC] 0 10 1 10 2 VDS [V] Forward characteristic of reverse of diode Avalanche energy derating IF=f(VSD):80s Pulse test,VGS=0V 200 10 n sig ew n for C [F] 25 450V VGS [V] Eas=f(starting Tch):Vcc=90V,IAV=6A 1 150 o 10 10 10 Eas [mJ] Tch=25 C typ. IF [A] VDS [V] 1n 500 . de 35 0 100 -1 50 0 -2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 50 100 150 o VSD [V] Starting Tch [ C] http://store.iiic.cc/ 3 2SK2653-01R 1 FUJI POWER MOSFET Transient thermal impedande Zthch=f(t) parameter:D=t/T 10 Zthch-c [K/W] 0 10 0.5 0.2 -1 10 0.1 0.05 t 0.02 D= t T T 0.01 -2 10 -5 10 0 -4 -3 10 10 -2 10 -1 10 0 10 1 10 t [s] de ew n for . n sig nd e mm t No o c e r http://store.iiic.cc/ 4