SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1
November 2014
SMBJ5V0(C)A - SMBJ170(C)A
600 Watt Transient Voltage Suppressors
Features
• Glass-Passi vated Junction
• 600 W Peak Pulse Power Capability
on 10/1000 μs Waveform.
• Excellent Clamping Capability
• Low-Incremental Surge Resistance
• Fast Response Time: Typically Less than 1.0 ps from 0 V
to BV minimum for Unidirectional and 5.0 ns for Bidirectional
•Typical I
R Less than 1. 0 μA Above 10 V
• UL Certificate #E258596
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions an d s tres si ng the parts to these lev el s i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Note:
1. Measured on 8.3 ms single half-sine wave or equivalent square wave: duty cycle = 4 pulses per minute maximum.
Symbol Parameter Value Unit
PPPM Peak Pulse Power Dissipation on 10/1000 μs Waveform 600 W
IPPM Peak Pulse Current on 10/1000 μs Waveform See Table A
IFSM Non-Repetitive Peak Forward Surge Current
Superimposed on Rated Load (JEDEC Method)(1) 100 A
TSTG Storage Temperature Range -55 to 150 °C
TJOperating Junction Temperature Range -55 to 150 °C
SMB/DO-214AA
Band denotes cathode on unidirectional devices only.
No band on bi-directional devices. Bi-directional types
have CA suffix where electrical characteristics apply in
both directions suitable for bi-directional applications.
SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 2
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Notes:
2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices.
3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled.
Uni-Directional
Bi-Directional (C)
Device
Part
Marking(2)
Reverse
Stand-Off
Voltage
VRWM (V)
Breakdown
Voltage
VBR (V)
Test
Current
IT (mA)
Clamping
Voltage
at IPPM
VC (V)
Peak Pulse
Current
IPPM (A)
Reverse
Leakage
at VRWM
IR (μA)(3)
Min. Max.
SMBJ5V0(C)A KE 5.0 6.40 7.00 10 9.2 65.2 800
SMBJ6V0(C)A KG 6.0 6.67 7.37 10 10.3 58.3 800
SMBJ6V5(C)A KK 6.5 7.22 7.98 10 11.2 53.6 500
SMBJ7V0(C)A KM 7.0 7.78 8.60 10 12.0 50.0 200
SMBJ7V5(C)A KP 7.5 8.33 9.21 1 12.9 46.5 100
SMBJ8V0(C)A KR 8.0 8.89 9.83 1 13.6 44.1 50
SMBJ8V5(C)A KT 8.5 9.44 10.4 1 14.4 41.7 20
SMBJ9V0(C)A KV 9.0 10.0 11.1 1 15.4 39.0 10
SMBJ10(C)A KX 10 11.1 12.8 1 17.0 35.3 5
SMBJ11(C)A KZ 11 12.2 13.5 1 18.2 33.0 5
SMBJ12(C)A LE 12 13.3 14.7 1 19.9 30.2 5
SMBJ13(C)A LG 13 14.4 15.9 1 21.5 27.9 5
SMBJ14(C)A LK 14 15.6 17.2 1 23.2 25.9 5
SMBJ15(C)A LM 15 16.7 18.5 1 24.4 24.6 5
SMBJ16(C)A LP 16 17.8 19.7 1 26.0 23.1 5
SMBJ17(C)A LR 17 18.9 20.9 1 27.6 21.7 5
SMBJ18(C)A LT 18 20.0 22.1 1 29.2 20.5 5
SMBJ20(C)A LV 20 22.2 24.5 1 32.4 18.5 5
SMBJ22(C)A LX 22 24.4 26.9 1 35.5 16.9 5
SMBJ24(C)A LZ 24 26.7 29.5 1 38.9 15.4 5
SMBJ26(C)A ME 26 28.9 31.9 1 42.1 14.3 5
SMBJ28(C)A MG 28 31.1 34.4 1 45.4 13.2 5
SMBJ30(C)A MK 30 33.3 36.8 1 48.4 12.4 5
SMBJ33(C)A MM 33 36.7 40.6 1 53.3 11.3 5
SMBJ36(C)A MP 36 40.0 44.2 1 58.1 10.3 5
SMBJ40(C)A MR 40 44.4 49.1 1 64.5 9.3 5
SMBJ43(C)A MT 43 47.8 52.8 1 69.4 8.6 5
SMBJ45(C)A MV 45 50.0 55.3 1 72.7 8.3 5
SMBJ48(C)A MX 48 53.3 58.9 1 77.4 7.8 5
SMBJ51(C)A MZ 51 56.7 62.7 1 82.4 7.3 5
SMBJ54(C)A NE 54 60.0 66.3 1 87.1 6.9 5
SMBJ58(C)A NG 58 64.4 71.2 1 93.6 6.4 5
SMBJ60(C)A NK 60 66.7 73.7 1 96.8 6.2 5
SMBJ64(C)A NM 64 71.1 78.6 1 103.0 5.8 5
SMBJ70(C)A NP 70 77.8 86.0 1 113.0 5.3 5
SMBJ75(C)A NR 75 83.3 92.1 1 121.0 5.0 5
SMBJ78(C)A NT 78 86.7 95.8 1 126.0 4.8 5
SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 3
Electrical Characteristics (Continued)
Values are at TA = 25°C unless otherwise noted.
Notes:
2. Color band denotes cathode on unidirectional devices only. No color band on bidirectional devices.
3. For bidirectional parts with VRWM < 10 V, the IR max limit is doubled.
Uni-Directional
Bi-Directional (C)
Device
Part
Marking(2)
Reverse
Stand-Off
Voltage
VRWM (V)
Breakdown
Voltage
VBR (V)
Test
Current
IT (mA)
Clamping
Voltage
at IPPM
VC (V)
Peak Pulse
Current
IPPM (A)
Reverse
Leakage
at VRWM
IR (μA)(3)
Min. Max.
SMBJ85(C)A NV 85 94.4 104.0 1 137.0 4.4 5
SMBJ90(C)A NX 90 100.0 111.0 1 146.0 4.1 5
SMBJ100(C)A NZ 100 111.0 123.0 1 162.0 3.7 5
SMBJ110(C)A PE 110 122.0 135.0 1 177.0 3.4 5
SMBJ120(C)A PG 120 133.0 147.0 1 193.0 3.1 5
SMBJ130(C)A PK 130 144.0 159.0 1 209.0 2.9 5
SMBJ150(C)A PM 150 167.0 185.0 1 243.0 2.5 5
SMBJ160(C)A PP 160 178.0 197.0 1 259.0 2.3 5
SMBJ170(C)A PR 170 189.0 209.0 1 275.0 2.2 5
SMBJ5V0(C)A - SMBJ170(C)A — 600 Watt Transient Voltage Suppressors
© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com
SMBJ5V0(C)A - SMBJ170(C)A Rev. 1.1.1 4
Typical Performance Characteristics
Figure 1. Peak Pulse Power Rating Curve Figure 2. Pulse Derating Curve
Figure 3. Pulse Wave form Figure 4. Junction Capacitance
Figure 5. Non-Repetitive Surge Current
0.0001 0.001 0.01 0.1 1 10
0.1
1
10
100
PULSE W IDTH (ms)
PULSE POWER (kW)
T = 25 C
º
A
0 25 50 75 100 125 150 175 200
0
25
50
75
100
AMBIENT TEMPERATURE ( C)
PULSE POWER (%)
º
01234
0
50
100
150
TIME (ms)
PEAK PULSE CURRENT (%)
T = 25 C
º
A
Pulse Width (td) is Defined
as the Point Where the Peak
Current Decays to 50% of Ipp
10/1000μ
μμ
μsec Waveform
as Defined by R.E.A.
tf = 10μ
μμ
μsec
e-kt
Peak Value
Ippm
Half Value-Ipp
2
td
1 5 10 50 100 200
10
20
50
100
200
500
1000
2000
4000
6000
REVERSE VOLTAGE (V)
CAPACITANCE (pF)
T = 25 C
º
A
f = 1.0 MHz
Visg = 50m Vp-p
Measured at
Zero Bias
Measured at
Stand-Off
Voltage (V )
RWM
12 51020 50100
10
20
50
100
200
NUM BER OF CYCLES AT 60Hz
FORWARD SURGE CURRENT (A)
T = T max
8.3ms Single Half Sine-Wave
JEDEC Method
A A
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