IXGK28N140B3H1 - Zilog

Symbol Test Conditions Maximum Ratings

VCES TJ = 25°C to 150°C 1400 V

VCGR TJ = 25°C to 150°C, RGE = 1MΩ1400 V

VGES Continuous ±20 V

VGEM Transient ±30 V

IC25 TC= 25°C 60 A

IC110 TC= 110°C 28 A

IF110 TC= 110°C 15 A

ICM TC= 25°C, 1ms 150 A

IATC= 25°C28A

EAS TC= 25°C 360 mJ

SSOA VGE = 15V, TVJ = 125°C, RG = 5Ω ICM = 120 A

(RBSOA) Clamped Inductive Load @ VCES < VCE

PCTC= 25°C 300 W

TJ -55 ... +150 °C

TJM 150 °C

Tstg -55 ... +150 °C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD 1.6 mm (0.062 in.) from Case for 10 260 °C

MdMounting Torque (IXGH & IXGK) 1.13/10 Nm/lb.in.

FCMounting Force (IXGX) 20..120/4.5..27 N/lb.

Weight TO-247 & PLUS247 6 g

TO-264 10 g

DS99736A(11/10)

GenX3TM 1400V

IGBTs w/ Diode

IXGH28N140B3H1

IXGX28N140B3H1

IXGK28N140B3H1

VCES = 1400V

IC110 = 28A

VCE(sat) ≤ ≤

≤ ≤

≤ 3.60V

Avalanche Rated

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VGE(th) IC= 250μA, VCE = VGE 3.0 5.0 V

ICES VCE = VCES, VGE = 0V 50 μA

Note 2, TJ = 125°C 1 mA

IGES VCE = 0V, VGE = ±20V ±100 nA

VCE(sat) IC= IC110, VGE = 15V, Note 1 3.00 3.60 V

TJ = 125°C 3.05

TO-247 (IXGH)

G = Gate E = Emitter

C = Collector Tab = Collector

GCETab

TO-264 (IXGK)

E

G

C

Tab

PLUS247 (IXGX)

GCE Tab

Features

zOptimized for Low Conduction and

Switching Losses

zSquare RBSOA

zAvalanche Rated

zAnti-Parallel Ultra Fast Diode

zHigh Current Handling Capability

Advantages

zHigh Power Density

zLow Gate Drive Requirement

Applications

zPower Inverters

zUPS

zMotor Drives

zSMPS

zPFC Circuits

zBattery Chargers

zWelding Machines

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH28N140B3H1 IXGK28N140B3H1

IXGX28N140B3H1

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs IC = IC110, VCE = 10V, Note 1 12 19 S

Cies 1830 pF

Coes VCE = 25V, VGE = 0V, f = 1 MHz 163 pF

Cres 46 pF

Qg(on) 88 nC

Qge IC = IC110, VGE = 15V, VCE = 0.5 • VCES 12 nC

Qgc 38 nC

td(on) 16 ns

tri 36 ns

Eon 3.6 mJ

td(off) 190 400 ns

tfi 360 ns

Eoff 3.9 6.5 J

td(on) 16 ns

tri 50 ns

Eon 7.3 mJ

td(off) 215 ns

tfi 700 ns

Eoff 6.5 mJ

RthJC 0.42 °C/W

RthCs 0.21 °C/W

0.15 °C/W

Inductive load, TJ = 25°C

IC = IC110, VGE = 15V

VCE = 960V, RG = 5Ω

Note 3

Inductive load, TJ = 125°C

IC = IC110, VGE = 15V

VCE = 960V, RG = 5Ω

Note 3

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Reverse Diode (FRED)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

VF IF = 20A, VGE = 0V, Note 1 3.0 V

TJ = 150°C 2.65 V

trr 350 ns

IRM 18.5 A

RthJC 0.90 °C/W

IF = 20A, VGE = 0V, -diF/dt = -200A/μs,

VR = 1200V, TJ = 125°C

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Part must be heatsunk for high-temp Ices measurement.

3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.

e

∅ P

TO-247 Outline

1 2 3

Terminals: 1 - Gate 2 - Collector

3 - Emitted

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

S 6.15 BSC 242 BSC

Terminals: 1 - Gate

2 - Collector

3 - Emitter

PLUS247 Outline Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

TO-264 AA Outline

Terminals: 1 = Gate

2,4 = Collector

3 = Emitter

Back Side

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.82 5.13 .190 .202

A1 2.54 2.89 .100 .114

A2 2.00 2.10 .079 .083

b 1.12 1.42 .044 .056

b1 2.39 2.69 .094 .106

b2 2.90 3.09 .114 .122

c 0.53 0.83 .021 .033

D 25.91 26.16 1.020 1.030

E 19.81 19.96 .780 .786

e 5.46 BSC .215 BSC

J 0.00 0.25 .000 .010

K 0.00 0.25 .000 .010

L 20.32 20.83 .800 .820

L1 2.29 2.59 .090 .102

P 3.17 3.66 .125 .144

Q 6.07 6.27 .239 .247

Q1 8.38 8.69 .330 .342

R 3.81 4.32 .150 .170

R1 1.78 2.29 .070 .090

S 6.04 6.30 .238 .248

T 1.57 1.83 .062 .072

IXGH28N140B3H1 IXGK28N140B3H1

IXGX28N140B3H1

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH28N140B3H1 IXGK28N140B3H1

IXGX28N140B3H1

Fi g . 1. Ou tput C h ar ac ter i sti cs @ T

J

= 25ºC

0

10

20

30

40

50

60

00.511.522.533.544.55

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fi g . 2. Exten ded Ou tp ut Ch ar acteristi cs @ T

J

= 25ºC

0

20

40

60

80

100

120

140

160

180

200

0 5 10 15 20 25

V

CE

- Volts

I

C

-

Amperes

V

GE

= 15V

7V

11V

9V

13V

5V

Fi g . 3. Ou tp ut Ch ar act er i sti cs @ T

J

= 125º C

0

10

20

30

40

50

60

00.511.522.533.544.555.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

13V

11V

7V

5V

9V

Fig. 4. Dependence o f V

CE(sat)

on

Junction T emperature

0.6

0.8

1.0

1.2

1.4

1.6

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 56A

I

C

= 28A

I

C

= 14A

Fi g . 5. Co l l ector-to -Emitter Vo l t ag e

vs. Gate- to -Emitter Vol tag e

2

3

4

5

6

7

8

5 6 7 8 9 10 11 12 13 14 15

V

GE

- Volts

V

CE

- Volts

I

C

= 56A

28A

14A

T

J

= 25ºC

Fig. 6. Input Admittance

0

20

40

60

80

100

120

34567891011

V

GE

- Volts

I

C

-

Amperes

T

J

= - 40ºC

25ºC

125ºC

Fig. 7. Tr ansconductance

0

4

8

12

16

20

24

28

0 20406080100120

I

C

- Amperes

g

f s

-

Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 8. Gate Charge

0

2

4

6

8

10

12

14

16

0 102030405060708090

Q

G

- NanoCoulombs

V

GE

- Volts

V

CE

= 600V

I

C

= 28A

I

G

= 10mA

Fi g . 10. R ever se- B i as Safe Op er ati n g Are a

0

20

40

60

80

100

120

140

200 400 600 800 1000 1200 1400

V

CE

- Volts

I

C

- Amperes

T

J

= 125ºC

R

G

= 5

dv / dt < 10V / ns

Fig. 9. Capacitance

10

100

1,000

10,000

0 5 10 15 20 25 30 35 40

V

CE

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Cies

Coes

Cres

Fi g . 11. Maximu m Tran si en t Th er mal I mped an ce

0.01

0.1

1

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXGH28N140B3H1 IXGK28N140B3H1

IXGX28N140B3H1

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGH28N140B3H1 IXGK28N140B3H1

IXGX28N140B3H1

Fig. 12. Inductive Switching Energy Loss vs.

Gate Resistance

2

4

6

8

10

12

14

16

18

0 10203040506070

R

G

- Ohms

E

off

- MilliJoules

3

5

7

9

11

13

15

17

19

E

on

- MilliJoules

E

off

E

on

- - - -

T

J

= 125ºC , V

GE

= 15V

V

CE

= 960V

I

C

= 28A

I

C

= 56A

I

C

= 14A

Fig. 15. Inductive T urn-off Switching Times vs.

Gate Resistance

550

600

650

700

750

800

0 10203040506070

R

G

- Ohms

t

f i

- Nanoseconds

0

200

400

600

800

1000

t

d

(

off

)

- Nanoseconds

t

fi

t

d(off)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 960V

I

C

= 56A

I

C

= 28A

Fig. 13. Inductive Swiching Energy Loss vs.

Collecto r Current

0

2

4

6

8

10

12

14

10 15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

E

off

- MilliJoules

0

2

4

6

8

10

12

14

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 5

,

V

GE

= 15V

V

CE

= 960V

T

J

= 125ºC

T

J

= 25ºC

Fig. 14. Inductive Swiching Energy Loss vs.

Junction T emperature

0

2

4

6

8

10

12

14

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

E

off

- MilliJoules

0

2

4

6

8

10

12

14

E

on

- MilliJoules

E

off

E

on

- - - -

R

G

= 5

,

V

GE

= 15V

V

CE

= 960V

I

C

= 28A

I

C

= 56A

I

C

= 14A

Fig. 16. Inductive Turn-off Switching Times vs.

Collector Current

0

200

400

600

800

1000

1200

10 15 20 25 30 35 40 45 50 55 60

I

C

- Amperes

t

f i

- Nanoseconds

50

100

150

200

250

300

350

t

d

(

off

)

- Nanoseconds

t

fi

t

d(off)

- - - -

R

G

= 5

, V

GE

= 15V

V

CE

= 960V

T

J

= 125ºC

T

J

= 25ºC

Fig. 17. Inductive Turn -off Switching T i mes vs.

Juncti on Temperature

200

300

400

500

600

700

800

900

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f i

- Nanoseconds

100

130

160

190

220

250

280

310

t

d

(

off

)

- Nanoseconds

t

fi

t

d(off)

- - - -

R

G

= 5



, V

GE

= 15V

V

CE

= 960V

I

C

= 28A

I

C

= 56A

Fi g . 18. I ndu cti ve Turn -o n S wit ch i n g Ti mes vs.

Gate R esistan ce

0

40

80

120

160

200

240

280

0 10203040506070

RG - Ohms

t

r i

- Nanoseconds

0

20

40

60

80

100

120

140

t

d

(

on

)

- Nanoseconds

t

ri

t

d(on)

- - - -

T

J

= 125ºC, V

GE

= 15V

V

CE

= 960V

I

C

= 56A

I

C

= 28A

Fig. 19. Inductive Turn-on Switching Ti mes vs.

Collector Current

0

20

40

60

80

100

120

140

160

10 15 20 25 30 35 40 45 50 55 60

IC - Amperes

t

r i

- Nanoseconds

4

8

12

16

20

24

28

32

36

t

d

(

on

)

- Nanoseconds

t

ri

t

d(on)

- - - -

R

G

= 5



, V

GE

= 15V

V

CE

= 960V

T

J

= 125ºC

T

J

= 25ºC

Fig. 20. Inductive Turn-on Switching Times vs.

Junction Tem perature

20

40

60

80

100

120

140

160

180

25 35 45 55 65 75 85 95 105 115 125

TJ - Degrees Centigrade

t

r i

- Nanoseconds

8

12

16

20

24

28

32

36

40

t

d

(

on

)

- Nanoseconds

t

ri

t

d(on)

- - - -

R

G

= 5



, V

GE

= 15V

V

CE

= 960V

I

C

= 28A

I

C

= 56A

IXYS REF: G_28N140B3H1(4A)11-29-10-B

IXGH28N140B3H1 IXGK28N140B3H1

IXGX28N140B3H1