DRAM FLASH - SSD MCP STORAGE DISPLAYS DISPLAYS, MEMORY AND STORAGE 1H 2017 CONTACTS PRODUCT SELECTION GUIDE Samsung Semiconductor, Inc. Samsung continues to lead the industry with the broadest portfolio of memory products and display technology. Its DRAM, flash, mobile and graphics memory are found in many computers -- from ultrabooks to powerful servers -- and in a wide range of handheld devices such as smartphones and tablets. Samsung is also a leader in display panels for smartphones, TVs and monitors and public information displays. In addition, Samsung provides the industry's widest line of storage products from the consumer to enterprise levels. These include flash storage, such as Solid State Drives, and a range of embedded flash storage products. Markets DRAM SSD FLASH MOBILE/WIRELESS NOTEBOOK PCs/ ULTRABOOKSTM DESKTOP PCs/ WORKSTATIONS SERVERS NETWORKING/ COMMUNICATIONS CONSUMER ELECTRONICS www.samsung.com/us/samsungsemiconductor ASIC LOGIC LCD/OLED DRAM TABLE OF CONTENTS DRAM PAGES 4-13 samsung.com/dram * DDR4 SDRAM * Graphics DRAM * DDR3 SDRAM * Mobile DRAM * DDR2 SDRAM * Ordering Info FLASH - SSD PAGES 14-15 samsung.com/flash * eMMC * Solid State Drives (SSD) * Universal Flash Storage (UFS) MULTI-CHIP PACKAGES PAGES 16 samsung.com/mcp * eMMC + LPDDR2 * eMMC + LPDDR3 STorAGE PAGES 17-19 samsung.com/flash-ssd * Solid State Drives (SSD) DISPLAyS PAGES 20-21 samsungdisplay.com * Public Information Display (PID) Product Classification * SNB/UNB * Indoor PID * E-Board * Outdoor PID CONTACTS samsung.com/semiconductor/sales-network * Sales Representatives and Distributors // PAGES 22-23 DDR4 SDRAM COMPONENTS Density 4Gb 8Gb Voltage 1.2V 1.2V 16Gb 1.2V (8Gb DDP) Organization 1G x 4 512M x 8 256M x 16 1G x 4 512M x 8 256M x 16 1G x 8 512M x16 2Gx8 Part Number K4A4G045WD-BCRC/PB K4A4G085WD-BCRC/PB K4A4G165WD-BCRC/PB K4A4G045WE-BCRC/PB K4A4G085WE-BCRC/PB K4A4G165WE-BCRC/PB K4A8G085WB-BCRC/PB K4A8G165WB-BCRC/PB K4AAG085WB-MCPB/RC K4AAG165WB-MCPB/RC # Pins-Package Compliance Speed (Mbps) Dimensions 78 Ball -FBGA Production 7.5x11mm 96 Ball -FBGA Lead Free & Halogen Free, Flip Chip 7.5x13.3mm 2400/2133 78 Ball -FBGA 7.5x11mm 96 Ball -FBGA 78 Ball FBGA 96 Ball -FBGA 7.5x13.3mm 7.5x11mm 7.5x13.3mm 78 Ball -FBGA Lead Free & Halogen Free, Flip Chip 2400/2133 Lead Free & Halogen Free, Flip Chip 2133/2400 7.5x13.3mm Now Now Now DDR4 SDRAM REGISTERED MODULES Density 4GB Voltage 1.2V Organization 1G x 72 Part Number M393A5143DB0-CPB M393A5143DB0-CRC M393A1G40DB0-CPB M393A1G40DB1-CRC M393A1G43DB0-CPB 8GB 1.2V 1G x 72 M393A1G43DB1-CRC M393A1G40EB1-CPB M393A1G40EB1-CRC M393A1G43EB1-CPB M393A1G43EB1-CRC Composition Compliance 4Gb (512M x8) * 9 Lead Free & Halogen Free, Flip Chip M393A2G40EB1-CPB 16GB 1.2V 2G x 72 M393A2K40BB1-CRC M393A2K43BB1-CPB/CRC 32GB 1.2V 4G x 72 64GB TSV 1.2V 8G x 72 M393A4K40BB0-CPB M393A4K40BB1-CRC M393A8G40D40-CRB M393A8K40B21-CRB M393A8K40B21-CTC 128GB TSV 1.2V Notes: DDR4 4Gb (D die) based 16G x 72 DDR4 4Gb (E die) based DDR4 (B Die) 8Gb based M393AAK40B41-CTC 0 = IDT 0 = IDT 0 = IDT 0 = IDT 0 = IDT 0 = IDT 2 = Montage 4 = Montage 4 = Montage 4 = Montage 4 = Montage 4 = Montage 2400 2133 4Gb (512M x8) * 18 Lead Free & Halogen Free, Flip Chip 4Gb (1G x4) * 18 Production 1 Now 2 2400 Now 2133 1 2400 2133 4Gb (512M x8) * 18 Ranks 1 2400 2 2400 2133 2400 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 1 2133/2400 8Gb (2G x4) * 36 Lead Free & Halogen Free, Flip Chip 4Gb 4H TSV (4G x4) * 36 Lead Free & Halogen Free, 4High TSV 8Gb 2H TSV (4G x4) * 36 Lead Free & Halogen Free, 2High TSV 8Gb 4H TSV (8G x4) * 36 Lead Free & Halogen Free, 4High TSV 3 = Inphi Now 2400 8Gb (1G x8) * 18 3 = Inphi 3 = Inphi 2400 2133 8Gb (2G x4) * 18 3 = Inphi 2 2133 M393A2G40EB1-CRC M393A2K40BB0-CPB 2133 2133 4Gb (1G x4) * 18 M393A2G40DB0-CPB M393A2G40DB1-CRC Speed (Mbps) 2133 2 2 2400 2133 Now 8 2133 4 2400 Now 2400 8 Now Speed (Mbps) Ranks Production PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) DDR4 SDRAM Load Reduced REGISTERED MODULES Density Voltage Organization Part Number M386A4G40DM0-CPB 32GB 1.2V 4G x 72 64GB 1.2V 8G x 72 128GB 1.2V 16G x 72 Notes: DDR4 4Gb (D die) based DDR4 (B Die) 8Gb based 4 DDR4 SDRAM M386A4G40DM1-CRC Composition Compliance 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free, DDP 2133 4 2400 Now M386A4K40BB0-CRC5 8G (2Gx4)*36 Lead Free & Halogen Free, Flip Chip M386A8K40BM1-CPB/CRC 8Gb DDP (4G x4) * 36 Lead Free & Halogen Free, DDP 2133/2400 4 Now 8Gb 4H TSV (8G x4) * 36 Lead Free & Halogen Free, DDP 2400 8 Now M386AAK40B40-CUC 0 = IDT 5 = IDT 0 = IDT 5 = IDT 2 = Montage 4 = Montage 4 = Montage 4 = Montage 2 PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) PB = DDR4-2133(15-15-15) RC = DDR4-2400(17-17-17) 1H 2017 samsung.com/dram samsung.com/dram Density Voltage Organization 16GB 1.2V 2G x 72 32GB 1.2V 4G x 72 Part Number Composition Compliance Speed (Mbps) M392A4K40BM0-CPB/RC 4Gb DDP (2G x4) * 18 Lead Free & Halogen Free, DDP 2133 M392A2K43BB0-CPB/RC 8Gb (1G x8) * 18 Lead Free & Halogen Free, Flip Chip 2133/2400 M392A4K40BM0-CPB/RC 8Gb DDP (4G x4) * 18 Lead Free & Halogen Free, DDP 2133/2400 Composition Compliance Speed (Mbps) Ranks Production 2 Now 2 Now DDR4 SDRAM UNBUFFERED MODULES Density Voltage Organization Part Number M378A5143EB1-CPB 4GB 1.2V 512M x 64 1G x 64 8GB 1.2V 2133 2400 M378A1K43BB1-CPB M378A1K43CB2-CPB 2400 Lead Free & Halogen Free 8Gb (1G x8) *8 1.2V 2G x 64 Notes: PB = DDR4-2133(15-15-15) 2133 M378A2K43CB1-CPB Now 2 Now 2400 2133 M378A1K43CB2-CRC M378A2K43BB1-CRC 1 2133 4Gb (512M x8) *16 M378A2K43BB1-CPB 16GB 2400 M378A5244CB0-CRC M378A1G43EB1-CRC Production 2133 Lead Free & Halogen Free M378A5244CB0-CPB M378A1K43BB2-CRC 1R x 8 4Gb (512M x8) *8 M378A5143EB2-CRC M378A1G43DB0-CPB Ranks 2133 M378A5143DB0-CPB 1 2133 8Gb (1G x8) * 16 Lead Free & Halogen Free M378A2K43CB1-CRC 2400 2133 2 Now 2400 RC = DD R4-2400(17-17-17) DDR4 SDRAM ECC UNBUFFERED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 4GB 1.2V 512M x72 M391A5143EB1-CPB/CRC M391A5143EB1-CPB/CRC Lead Free & Halogen Free, Flip Chip 2133/2400 1 Now 8GB 1.2V 1G x72 16GB 1.2V 2G x72 Notes: PB = DDR4-2133(15-15-15) M391A1G43DB0-CPB/CRC M391A1G43DB0-CPB/CRC M391A1K43BB1-CPB/CRC M391A1K43BB1-CPB/CRC Lead Free & Halogen Free, Flip Chip 2133/2400 2 Now M391A2K43BB1-CPB/CRC M391A2K43BB1-CPB/CRC Lead Free & Halogen Free, Flip Chip 2133/2400 2 Now RC = DDR4-2400(17-17-17) DDR4 SDRAM SODIMM MODULES Density Voltage Organization 4GB 1.2V 512M x 64 Part Number M471A5143DB0-CPB M471A5143EB0-CPB/RC Composition 4Gb (512M x8) * 8 Compliance 2133 Lead Free & Halogen Free M471A5244CB0-CPB/RC M471A1G43DB0-CPB 8GB 1.2V 1G x 64 M471A1G43EB1-CPB/CRC M471A1K43BB1-CPB/CRC M471A1K43CB1-CPB/CRC 16GB 1.2V 2G x 64 Notes: PB = DDR4-2133(15-15-15) M471A2K43BB1-CPB/RC M471A2K43CB1-CPB/RC Speed (Mbps) Lead Free & Halogen Free 8Gb (1Gx8)*8 8Gb (1G x8) * 16 Lead Free & Halogen Free Composition Compliance Production 1 Now 2133/2400 2133 4Gb (512M x8) * 16 Ranks 2133/2400 2 Now 1 2133/2400 2 Now Speed (Mbps) Ranks Production 2 Now 2 Now RC = DDR4-2400(17-17-17) DDR4 SDRAM ECC SODIMM MODULES Density Voltage Organization Part Number M474A1G43DB0-CPB 8GB 1.2V 1G x 72 M474A1G43DB1-CRC 2133 4Gb (512M x8) * 18 M474A1G43EB1-CPB/CRC 16GB 1.2V 2G x 72 samsung.com/dram M474A2K43BB1-CPB/RC Lead Free & Halogen Free, Flip Chip 2400 2133/2400 8Gb (1G x8) * 18 1H 2017 Lead Free & Halogen Free, Flip Chip 2133/2400 DDR4 SDRAM 5 DRAM DDR4 SDRAM VLP REGISTERED MODULES DDR3 SDRAM REGISTERED MODULES Density Voltage Organization Part Number 1.5V 8GB 1G x 72 1.35V Speed (Mbps) Compliance M393B1G70EB0-CMA 4Gb (1G x4) * 18 M393B1G73EB0-CMA 4Gb (512M x8) * 18 M393B1G70EB0-YK0 4Gb (1G x4) * 18 M393B1G73EB0-YK0 4Gb (2R x8) * 18 1866 Lead Free & Halogen Free, Flip Chip 1600 M393B2G70DB0-CMA 1.5V 16GB Composition M393B2G70EB0-CMA 2G x 72 M393B2G70DB0-YK0 1.35V 32GB 1.35V 8 = IDT A1 Evergreen 9 = Inphi UVGS02 4G x 72 Production 1 2 Now 1 2 1866 4Gb (1G x4) * 36 Lead Free & Halogen Free, Flip Chip 2 Now 4 Now 1600 M393B2G70EB0-YK0 Notes: Ranks M393B4G70DM0-YH9 4Gb DDP (2G x4) * 36 2 = IDT (E-die) 3 = Inphi (E-die) YK = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) Lead Free & Halogen Free. DDP 1333 DDR3 SDRAM Load Reduced REGISTERED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 32GB 1.35V 4G x 72 M386B4G70DM0-YK0 4Gb DDP (2G x4) * 36 Lead Free & Halogen Free, DDP 1600 4 Now 4Gb QDP (4G x4) * 36 Lead Free & Halogen Free, QDP 8 Now 64GB Notes: 1.35V 1.5V M386B8G70DE0-YH9(4) 8G x 72 3 = Inphi iMB GS02B M386B8G70DE0-CK0(4) 1333 1600 4 = Montage C1 DDR3 SDRAM VLP REGISTERED MODULES Density Voltage Organization 1.5V 8GB 1G x 72 1.35V 16GB 1.5V 1.35V 32GB 1.35V Notes: 2 = IDT Composition M392B1G70DB0-CMA 4Gb (1Gx4) * 18 M392B1G73DB0-CMA 4Gb (512M x8) * 18 M392B1G70DB0-YK0 4Gb (1Gx4) * 18 M392B1G73DB0-YK0 4Gb (512M x8) * 18 M392B2G70DM0-CMA 2G x 72 M392B2G70DM0-YK0 4G x 72 3 = Inphi Part Number M392B4G70DE0-YH9 YK = DDR3-1600 Speed (Mbps) Compliance Ranks 1 1866 2 Lead Free & Halogen Free, Flip Chip Lead Free & Halogen Free, DDP 4Gb QDP (4G x4) * 18 Lead Free & Halogen Free, QDP Now 1 1600 4Gb DDP (2G x4) * 18 Production 2 1866 1600 1333 2 Now 4 Now MA = DDR3-1866 (13-13-13) DDR3 Non ECC UNBUFFERED MODULES Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 4Gb (512M x8) * 8 Lead Free & Halogen Free. Flip Chip 1600/1866 1 Now 4Gb (512M x8) * 16 Lead Free & Halogen Free. Flip Chip 1600/1866 2 Now M378B5173DB0-CK0/CMA 4GB 1.5V 512M x 64 M378B5173EB0-CK0/CMA M378B5173EB0-YK0/*CMA 8GB 1.5V M378B1G73DB0-CK0/MA 1G x 64 1.35V Notes: M378B1G73EB0-CK0/CMA M378B1G73EB0-YK0/*CMA YK = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) * 1.35V is compatible to 1.5V DDR3 SDRAM UNBUFFERED MODULES (ECC) Density 4GB 8GB Notes: 6 Voltage 1.5V 1.35V 1.5V 1.35V Organization 512Mx72 1G x 72 YK0 = DDR3-1600 (11-11-11) DDR3 SDRAM Part Number M391B5173EB0-CMA M391B5173EB0-YK0 M391B1G73EB0-CMA M391B1G73EB0-YK0 Composition Compliance 4Gb (512M x8) * 9 Lead Free & Halogen Free 4Gb (512M x8) * 18 Lead Free & Halogen Free Speed (Mbps) 1866 1600 1866 1600 Ranks Production 1 Now 2 Now MA = DDR3-1866 (13-13-13) 1H 2017 samsung.com/dram Density Voltage Organization Part Number Composition Compliance Speed (Mbps) Ranks Production 4GB 1.35V 512M x 72 M474B5173EB0-YK0 4Gb (512M x8) * 9 Lead Free & Halogen Free, Flip Chip 1866 1 Now 2 Now 8GB 1.5V 1.35V 1G x 72 M474B1G73EB0-CMA M474B1G73EB0-YK000 4Gb (512M x8) * 18 1866 Lead Free & Halogen Free, Flip Chip 1600 DRAM DDR3 SDRAM SODIMM MODULES DDR3 SDRAM COMPONENTS Density Voltage 1.5V 1Gb 1.35V 1.5V 2Gb 1.35V 1.5V 4Gb 1.35V 1.5V Organization Part Number # Pins- Package Compliance 128M x 8 K4B1G0846I-BCK0/MA/NB 78 Ball -FBGA 128M x 16 K4B1G1646I-BCK0/MA/NB 96 Ball -FBGA 128M x 8 K4B1G0846I-BYK0/MA 78 Ball -FBGA 128M x 16 K4B1G1646I-BYK0/MA 96 Ball -FBGA 512M x 8 K4B2G0846F-BCK0/MA/NB 78 Ball -FBGA 256M x 16 K4B2G1646F-BCK0/MA/NB 96 Ball -FBGA 256M x 8 K4B2G0846F-BK0/MA 78 Ball -FBGA 128M x 16 K4B2G1646F-BK0/MA 96 Ball -FBGA 512M x 8 K4B4G0846D-BCK0/MA/NB 78 Ball -FBGA 256M x 16 K4B4G1646D-BCK0/MA/NB 96 Ball -FBGA 512M x 8 K4B4G0846E-BCK0/MA/NB 78 Ball -FBGA 256M x 16 K4B4G1646E-BCK0/MA/NB 96 Ball -FBGA 1G x 4 K4B4G0446D-BYK0 512M x 8 K4B4G0846D-BYK0 256M x 16 K4B4G1646D-BYK0/MA 1G x 4 K4B4G0446E-BYK0/MA 512M x 8 K4B4G0846E-BYK0/MA 256M x 16 K4B4G1646E-BYK0/MA 512M x 16 8Gb 1.35V Notes: 512M x 16 H9 = DDR3-1333 (9-9-9) Speed (Mbps) 1600/1866/2133 Lead Free & Halogen Free, Flip Chip Dimensions Production 7.5x11mm 7.5x13.3mm Now 7.5x11mm 1600/1800 7.5x13.3mm 1600/1866/2133 Lead Free & Halogen Free, Flip Chip 7.5x11mm 7.5x13.3mm Now 7.5x11mm 1600/1866 7.5x13.3mm 7.5x11mm Lead Free & Halogen Free, Flip Chip 1600/1866/2133 7.5x13.3mm Now 7.5x11mm 7.5x13.3mm 78 Ball -FBGA 1600 96 Ball -FBGA 7.5x11mm 7.5x13.3mm Lead Free & Halogen Free, Flip Chip 1600/1866 78 Ball -FBGA 7.5x11mm 96 Ball -FBGA Now 7.5x11mm 7.5x11mm 7.5x13.3mm K4B8G1646Q-MCK0/MA K4G8G1646D-MCK0/MA K4G8G1646D-MCK0/MA 96 Ball -FBGA Lead Free & Halogen Free 1600/1866 11x13.3mm Now K4G8G1646D-MYK0/ (MA) K0 = DDR3-1600 (11-11-11) MA = DDR3-1866 (13-13-13) NB = DDR3-2133 (14-14-14) DDR2 SDRAM COMPONENTS Density 512Mb 1Gb Notes: Organization Part Number # Pins-Package Dimensions 64M x 8 K4T51083QN-BCE7 60-FBGA 7.5x9.5mm 32M x 16 K4T51163QN-BCE7 84-FBGA 7.5x12.5mm 128M x 8 K4T1G084QJ-BCE7 60-FBGA 7.5x9.5mm 64M x 16 K4T1G164QJ-BCE7 84-FBGA 7.5x12.5mm E6 = DDR2-667 (5-5-5) samsung.com/dram E7 = DDR2-800 (5-5-5) F7 = DDR2-800 (6-6-6) 1H 2017 Package Speed (Mbps) Production Lead free & Halogen free , Flip chip 667/800/1066 Now Lead free & Halogen free , Flip chip 667/800/1066 Now F8 = DDR2-1066 (7-7-7) DDR3 & DDR2 SDRAM 7 GRAPHICS DRAM COMPONENTS Type Density 8Gb Organization Part Number Package K4G80325FB-HC(03/28/25/22) 256M x 32 K4G80325FB-HC(03/28/25/22) GDDR5 K4G41325FE-HC2(03/28/25/22) 4Gb 128M x 32 gDDR3 4Gb 256M x 16 Notes: Package & Speed Bin Codes 170-FCFBGA K4G41325FE-HC2(03/28/25/22) K4W4G1646E-BC(1A/1B) K4W4G1646E-BC(1A/1B) 96-FCFBGA H: FBGA (Halogen Free & Lead Free) (DDR3) B: FCFBGA (Halogen Free & Lead Free) (DDR3) H: FCFBGA (Halogen Free & Lead Free) (GDDR5) F: FBGA (Halogen Free & Lead Free) (GDDR5) 22: 0.22ns (9000Mbps) 25: 0.25ns (8000Mbps) VDD/VDDQ Speed Bin (MHz) 1.5V/1.5V 6000/7000/8000*/9000* Production 1.35V/1.35V 5000/6000/6500/TBD 1.5V/1.5V 6000/7000/8000*/9000* 1.35V/1.35V 5000/6000/6500/TBD 1.5V/1.5V 2133/2400 1.35V/1.35V 1866/2133 Now Now 28: 0.28ns (7000Mbps) 03: 0.3ns (6000Mbps) 04: 0.4ns (5000Mbps) 1B: 8.3ns (2400Mbps gDDR3) 1A: 1.0ns (2133Mbps gDDR3) 11: 1.1ns (1866Mbps) MOBILE DRAM COMPONENTS Type Density Organization 8Gb 1CH x 32 12Gb 1CH x32 LPDDR4 LPDDR4X 8 Now 168-FBGA, 12x12, DDP, 1866Mbps K3QF2F20BM-AGCF 253-FBGA, 11x11.5, DDP, 1866Mbps K3QF3F30BM-FGCF 256-FBGA, 14x14, DDP, 1866Mbps 1CH x32 K4EHE304EA-AGCF 168-FBGA, 12x12, QDP, 1866Mbps 2CH x32 K3QF6F60AM-FGCF 256-FBGA, 14x14, QDP, 1866Mbps 1CH x32 K4EBE304EB-EGCF 178-FBGA, 11x11.5, QDP, 1866Mbps K3QF4F40BM-AGCF 253-FBGA, 11x11.5, QDP, 1866Mbps K3QF4F40BM-FGCF 256-FBGA, 14x14, QDP, 1866Mbps K4F8E304HB-MGCJ 200-FBGA, 10x15, SDP, 3733Mbps K4F6E304HB-MGCJ 200-FBGA, 10x15, DDP, 3733Mbps K4FHE3D4HM-MFCJ 200-FBGA, 10x15, DDP, 3733Mbps K3RG4G40MM-MGCJ 366-FBGA, 15x15, DDP, 3733Mbps K3RG2G20CA-MGCJ 366-FBGA, 15x15, QDP, 3733Mbps CS K3RG2G20CM-FGCJ 432-FBGA, 15x15, QDP, 3733Mbps ES Now 2CH x32 2CH x16 32Gb 4CH x16 48Gb 4CH x16 48Gb 1.8V/1.2V/1.2V 178-FBGA, 11x11.5, DDP, 1866Mbps 24Gb 32Gb 168-FBGA, 12x12, SDP, 1866Mbps Production K4E6E304EB-AGCF 8Gb 16Gb K4E8E324EB-AGCF Power 168-FBGA, 12x12, DDP, 1866Mbps 2CH x 32 32Gb 178-FBGA, 11x11.5, SDP, 1866Mbps K4E2E304EA-AGCF 16Gb 24Gb Package K4E8E324EB-EGCF K4E6E304EB-EGCF 1CH x 32 LPDDR3 Part Number 4CH x16 GRAPHICS & MOBILE DRAM K3RG6G60MM-MGCJ 366-FBGA, 15x15, QDP, 3733Mbps K3UH5H50MM-NGCJ 366-FBGA, 12x12.7 DDP, 3733Mbps K3UH6H60AM-NGCJ 366-FBGA, 12x12.7 QDP, 3733Mbps 1H 2017 Now 1.8V/1.1V/1.1V 1.8V/1.1V/1.1V CS samsung.com/dram 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power Package Type Generation Interface (VDD, VDDQ) Number of Internal Banks DRAM DRAM Type Density Bit Organization 1. Memory (K) 2. DRAM: 4 3. DRAM Type B: DDR3 SDRAM D: GDDR SDRAM G: GDDR5 SDRAM H: DDR SDRAM J: GDDR3 SDRAM M: Mobile SDRAM N: SDDR2 SDRAM S: SDRAM T: DDR SDRAM U: GDDR4 SDRAM V: Mobile DDR SDRAM Power Efficient Address W: SDDR3 SDRAM X: Mobile DDR SDRAM Y: XDR DRAM Z: Value Added DRAM 4. Density 10: 1G, 8K/32ms 16: 16M, 4K/64ms 26: 128M, 4K/32ms 28: 128M, 4K/64ms 32: 32M, 2K/32ms 50: 512M, 32K/16ms 51: 512M, 8K/64ms 52: 512M, 8K/32ms 54: 256M, 16K/16ms 55: 256M, 4K/32ms 56: 256M, 8K/64ms 62: 64M, 2K/16ms 64: 64M, 4K/64ms 68: 768M, 8K/64ms 1G: 1G, 8K/64ms 2G: 2G, 8K/64ms 4G: 4G, 8K/64ms 5. Bit Organization 02: x 2 04: x 4 06: x 4 Stack (Flexframe) 07: x 8 Stack (Flexframe) samsung.com/dram DRAM COMPONENT DRAM ORDERING INFORMATION 08: x 8 15: x 16 (2CS) 16: x 16 26: x 4 Stack (JEDEC Standard) 27: x 8 Stack (JEDEC Standard) 30: x 32 (2CS, 2CKE) 31: x 32 (2CS) 32: x 32 6. # of Internal Banks 2: 2 Banks 3: 4 Banks 4: 8 Banks 5: 16 Banks 7. Interface ( VDD, VDDQ) 2: LVTTL, 3.3V, 3.3V 4: LVTTL, 2.5V, 2.5V 5: SSTL-2 1.8V, 1.8V 6: SSTL-15 1.5V, 1.5V 8: SSTL-2, 2.5V, 2.5V A: SSTL, 2.5V, 1.8V F: POD-15 (1.5V,1.5V) H: SSTL_2 DLL, 3.3V, 2.5V M: LVTTL, 1.8V, 1.5V N: LVTTL, 1.5V, 1.5V P: LVTTL, 1.8V, 1.8V Q: SSTL-2 1.8V, 1.8V R: SSTL-2, 2.8V, 2.8V U: DRSL, 1.8V, 1.2V 8. Generation A: 2nd Generation B: 3rd Generation C: 4th Generation D: 5th Generation E: 6th Generation F: 7th Generation G: 8th Generation H: 9th Generation I: 10th Generation J: 11th Generation K: 12th Generation M: 1st Generation N: 14th Generation Q: 17th Generation 1H 2017 9. Package Type DDR2 DRAM L: TSOP II (Lead-free & Halogen-free) H: FBGA (Lead-free & Halogen-free) F: FBGA for 64Mb DDR (Lead-free & Halogen-free) 6: sTSOP II (Lead-free & Halogen-free) T: TSOP II N: sTSOP II G: FBGA U: TSOP II (Lead-free) V: sTSOP II (Lead-free) Z: FBGA (Lead-free) DDR2 SDRAM Z: FBGA (Lead-free) J: FBGA DDP (Lead-free) Q: FBGA QDP (Lead-free) H: FBGA (Lead-free & Halogen-free) M: FBGA DDP (Lead-free & Halogen-free) E: FBGA QDP (Lead-free & Halogen-free) T: FBGA DSP (Lead-free & Halogen-free, Thin) DDR3 SDRAM Z: FBGA (Lead-free) H: FBGA (Halogen-free & Lead-free) Graphics Memory Q: TQFP U: TQFP (Lead Free) G: 84/144 FBGA V: 144 FBGA (Lead Free) Z: 84 FBGA (Lead Free) T: TSOP L: TSOP (Lead Free) A: 136 FBGA B: 136 FBGA (Lead Free) H: FBGA (Hologen Free & Lead Free) E: 100 FBGA (Hologen Free & Lead Free) SDRAM L TSOP II (Lead-free & Halogen-free) N: STSOP II T: TSOP II U: TSOP II (Lead-free) V: sTSOP II (Lead-free) DRAM Ordering Information 9 COMPONENT DRAM ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 T XX XX X X X X X XX SAMSUNG Memory Speed Temp & Power Package Type Generation Interface (VDD, VDDQ) Number of Internal Banks DRAM DRAM Type Density Bit Organization XDR DRAM J: BOC(LF) P: BOC Mobile DRAM Leaded/Lead Free G/A: 52balls FBGA Mono R/B: 54balls FBGA Mono X/Z: 54balls BOC Mono J/V: 60(72)balls FBGA Mono 0.5pitch L /F: 60balls FBGA Mono 0.8pitch S/D: 90balls FBGA Monolithic (11mm x 13mm) F/H: Smaller 90balls FBGA Mono Y/P: 54balls CSP DDP M/E: 90balls FBGA DDP 10. Temp & Power - COMMON (Temp, Power) C: Commercial, Normal (0'C - 95'C) & Normal Power C: (Mobile Only) Commercial (-25 ~ 70'C), Normal Power J: Commercial, Medium L: Commercial, Low (0'C - 95'C) & Low Power L: (Mobile Only) Commercial, Low, i-TCSR F: Commercial, Low, i-TCSR & PASR & DS E: Extended (-25~85'C), Normal N: Extended, Low, i-TCSR G: Extended, Low, i-TCSR & PASR & DS I: Industrial, Normal (-40'C - 85'C) & Normal Power P: Industrial, Low (-40'C - 85'C) & Low Power H: Industrial, Low, i-TCSR & PASR & DS 11. Speed (Wafer/Chip Biz/BGD: 00) DDR SDRAM CC: DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) B3: DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3) *1 A2: DDR266 (133MHz @ CL=2 , tRCD=3, tRP=3) B0: DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3) Note 1: "B3" has compatibility with "A2" and "B0" 10 DRAM Ordering Information DDR2 SDRAM CC: DDR2-400 (200MHz @ CL=3, tRCD=3, tRP=3) D5: DDR2-533 (266MHz @ CL=4, tRCD=4, tRP=4) E6: DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5) F7: DDR2-800 (400MHz @ CL=6, tRCD=6, tRP=6) E7: DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5) DDR3 SDRAM F7: DDR3-800 (400MHz @ CL=6, tRCD=6, tRP=6) F8: DDR3-1066 (533MHz @ CL=7, tRCD=7, tRP=7) G8: DDR3-1066 (533MHz @ CL=8, tRCD=8, tRP=8) H9: DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0: DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11) MA: DDR3-1866 (933MHz @ CL=13, tRCD=13, tRP=13) NB: DDR3-2133 (1067MHz @ CL=14, tRCD=14, tRP=14) Graphics Memory 18: 1.8ns (550MHz) 04: 0.4ns (2500MHz) 20: 2.0ns (500MHz) 05: 0.5ns (2000MHz) 22: 2.2ns (450MHz) 5C: 0.56ns (1800MHz) 25: 2.5ns (400MHz) 06: 0.62ns (1600MHz) 2C: 2.66ns (375MHz) 6A: 0.66ns (1500MHz) 2A: 2.86ns (350MHz) 07: 0.71ns (1400MHz) 33: 3.3ns (300MHz) 7A: 0.77ns (1300MHz) 36: 3.6ns (275MHz) 08: 0.8ns (1200MHz) 40: 4.0ns (250MHz) 09: 0.9ns (1100MHz) 45: 4.5ns (222MHz) 1 : 1.0ns (1000MHz) 50/5A: 5.0ns (200MHz) 1 : 1.1ns (900MHz) 55: 5.5ns (183MHz) 12: 1.25ns (800MHz) 60: 6.0ns (166MHz) 14: 1.4ns (700MHz) 16: 1.6ns (600MHz) SDRAM (Default CL=3) 50: 5.0ns (200MHz CL=3) 60: 6.0ns (166MHz CL=3) 67: 6.7ns 75: 7.5ns PC133 (133MHz CL=3) XDR DRAM A2: 2.4Gbps, 36ns, 16Cycles B3: 3.2Gbps, 35ns, 20Cycles C3: 3.2Gbps, 35ns, 24Cycles C4: 4.0Gbps, 28ns, 24Cycles DS: Daisychain Sample Mobile-SDRAM 60: 166MHz, CL 3 75: 133MHz, CL 3 80: 125MHz, CL 3 1H: 105MHz, CL 2 1L: 105MHz, CL 3 15: 66MHz, CL 2 & 3 Mobile-DDR C3: 133MHz, CL 3 C2: 100MHz, CL 3 C0: 66MHz, CL 3 Note: All Lead-free and Halogen-free products are in compliance with RoHS 1H 2017 samsung.com/dram 1 2 3 4 5 6 7 8 9 10 11 12 13 M X XX T XX X X X X X X XX X AMB Vendor Speed Temp & Power PCB Revision Package Generation SAMSUNG Memory DIMM Data bits DRAM Component Type Depth Number of Banks Bit Organization 1. Memory Module: M 2. DIMM Type 3: DIMM 4: SODIMM 3. Data bits 12: x 72 184pin Low Profile Registered DIMM 63: x 63 PC100/PC133 SODIMM with SPD for 144pin 64: x 64 PC100/PC133 SODIMM with SPD for 144pin (Intel/JEDEC) 66: x 64 Unbuffered DIMM with SPD for 144pin/168pin (Intel/JEDEC) 68: x 64 184pin Unbuffered DIMM 70: x 64 200pin Unbuffered SODIMM 71: x 64 204pin Unbuffered SODIMM 74: x 72/ECC Unbuffered DIMM with SPD for 168pin (Intel/JEDEC) 77: x 72/ECC PLL + Register DIMM with SPD for 168pin (Intel PC100) 78: x 64 240pin Unbuffered DIMM 81: x 72 184pin ECC unbuffered DIMM 83: x 72 184pin Registered DIMM 90: x 72/ECC PLL + Register DIMM 91: x 72 240pin ECC unbuffered DIMM 92: x 72 240pin VLP Registered DIMM 93: x 72 240pin Registered DIMM 95: x 72 240pin Fully Buffered DIMM with SPD for 168pin (JEDEC PC133) 4. DRAM Component Type B: DDR3 SDRAM (1.5V VDD) L: DDR SDRAM (2.5V VDD) S: SDRAM T: DDR2 SDRAM (1.8V VDD) 5. Depth 9. Package 09: 8M (for 128Mb/512Mb) 17: 16M (for 128Mb/512Mb) 16: 16M 28: 128M 29: 128M (for 128Mb/512Mb) 32: 32M 33: 32M (for 128Mb/512Mb) 51: 512M 52: 512M (for 512Mb/2Gb) 56: 256M 57: 256M (for 512Mb/2Gb) 59: 256M (for 128Mb/512Mb) 64: 64M 65: 64M (for 128Mb/512Mb) 1G: 1G 1K: 1G (for 2Gb) 6. # of Banks in Comp. & Interface 1: 4K/64mxRef., 4Banks & SSTL-2 2 : 8K/64ms Ref., 4Banks & SSTL-2 2: 4K/64ms Ref., 4Banks & LVTTL (SDR Only) 5: 8K/64ms Ref., 4Banks & LVTTL (SDR Only) 5: 4Banks & SSTL-1.8V 6: 8Banks & SSTL-1.8V 7. Bit Organization 0: x 4 3: x 8 4: x16 6: x 4 Stack (JEDEC Standard) 7: x 8 Stack (JEDEC Standard) 8: x 4 Stack 9: x 8 Stack 8. Generation A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. M: 1st Gen. Q: 17th Gen. samsung.com/dram DRAM MODULE DRAM ORDERING INFORMATION 1H 2017 E: FBGA QDP (Lead-free & Halogen-free) G: FBGA H: FBGA (Lead-free & Halogen-free) J: FBGA DDP (Lead-free) M: FBGA DDP (Lead-free & Halogen-free) N: sTSOP Q: FBGA QDP (Lead-free) T: TSOP II (400mil) U: TSOP II (Lead-Free) V: sTSOP II (Lead-Free) Z: FBGA (Lead-free) 10. PCB Revision 0: Mother PCB 1: 1st Rev 2: 2nd Rev. 3: 3rd Rev. 4: 4th Rev. A: Parity DIMM S: Reduced PCB U: Low Profile DIMM 11. Temp & Power C: Commercial Temp. (0C ~ 95C) & Normal Power L: Commercial Temp. (0C ~ 95C) & Low Power 12. Speed CC: (200MHz @ CL=3, tRCD=3, tRP=3) D5: (266MHz @ CL=4, tRCD=4, tRP=4) E6: (333MHz @ CL=5, tRCD=5, tRP=5) F7: (400MHz @ CL=6, tRCD=6, tRP=6) E7: (400MHz @ CL=5, tRCD=5, tRP=5) F8: (533MHz @ CL=7, tRCD=7, tRP=7) G8: (533MHz @ CL=8, tRCD=8, tRP=8) H9: (667MHz @ CL=9, tRCD=9, tRP=9) K0: (800MHz @ CL=10, tRCD=10, tRP=10) 7A: (133MHz CL=3/PC100 CL2) 13. AMB Vendor for FBDIMM 0, 5: Intel 1, 6, 8: IDT 9: Montage Note: All Lead-free and Halogen-free products are in compliance with RoHS DRAM Ordering Information 11 DDR4 SDRAM MODULE ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 12 M X XX A XX X X X X X X XX Speed Temp & Power PCB Revision Package Component Revision Memory Module DIMM Type Data bits DRAM Component Type Depth # of Banks in Comp. & Interface Bit Organization 1. Memory Module: M 6. # of Banks in Comp. & Interface 2. DIMM Type 3: R/LRDIMM 4: SODIMM 4: 16Banks & POD-1.2V 7. Bit Organization 74: x 72 260pin SODIMM 86: x 72 288pin Load Reduced DIMM 93: x 72 288pin Registered DIMM 8. Component Revision 4. DRAM Component Type A: DDR4 SDRAM (1.2V VDD) 5. Depth 1G: 1G 2G: 2G 4G: 4G 8G: 8G 1K: 1G (for 8Gb) 2K: 2G (for 8Gb) 12 DDR4 SDRAM Module Ordering Information B: FBGA (Halogen-free & Lead-free, Flip Chip) M: FBGA (Halogen-free & Lead-free, DDP) 10. PCB Revision 0: x 4 3: x 8 3. Data bits 9. Package M: 1st Gen. A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. 0: None 1: 1st Rev. 2: 2nd Rev. 3: 3rd Rev. 4: 4th Rev. 11. Temp & Power C: Commercial Temp. (0C ~ 85C) & Normal Power 12. Speed PB: DDR4-2133 (1066MHz @ CL=15, tRCD=15, tRP=15) 1H 2017 samsung.com/dram 1 2 3 4 5 6 7 8 9 10 11 K 4 A XX XX X X X X X XX Speed Temp & Power Package Type Revision Interface (Vdd, Vddq) #of Internal Banks Samsung Memory DRAM DRAM Type Density Bit Organization 1. Samsung Memory: K 2. DRAM: 4 3. DRAM Type A: DDR4 SDRAM 4. Density 4G: 4Gb 8G: 8Gb 5. Bit Organization 04: x 4 08: x 8 samsung.com/dram DRAM DDR4 SDRAM MEMORY ORDERING INFORMATION 6. # of Internal Banks 5: 16Banks 7. Interface (VDD, VDDQ) W: POD (1.2V, 1.2V) 8. Revision M: 1st Gen. A: 2nd Gen. B: 3rd Gen. C: 4th Gen. D: 5th Gen. E: 6th Gen. F: 7th Gen. G: 8th Gen. H: 9th Gen. 1H 2017 9. Package Type B: FBGA (Halogen-free & Lead-free, Flip Chip) M: FBGA (Halogen-free & Lead-free, DDP) 10. Temp & Power C: Commercial Temp. (0C ~ 85C) & Normal Power 11. Speed PB: DDR4-2133 (1066MHz @ CL=15, tRCD=15, tRP=15) RC: DDR4-2400 (1200MHz @ CL=17, tRCD=17, tRP=17) DDR4 SDRAM Module Ordering Information 13 MOBILE STORAGE Application High-End Product UFS v2.1 (Gear 3 x 2 lanes) UFS v2.0 (Gear 3 x 2 lanes) UFS 2.0 (Gear 3 x 1 lane) Mainstream eMMC v5.1 (Gear 3 x 1 lane) Density Org 256GB 256Gb*8 Type TLC Flash Die Part Number Seq R/W MB/s Random R/W IOPS M-die KLUEG8U1EM-B0C10** 890/260 48K / 42K 128GB 128Gb*8 E-die KLUDG8V1EE-B0C10** 880/230 40K / 33K 64GB 128Gb*4 MLC D-die KLUCG4J1ED-B0C10** 880/200 48K / 35K 256GB 256Gb*8 TLC M-die KLUEG8U1EM-B0B10** 850/260 45K / 40K 128GB 128Gb*8 64GB 128Gb*4 32GB 64Gb*4 256GB 256Gb*8 128GB 256Gb*4 64GB 128Gb*4 32GB 128Gb*2 16GB 128Gb*1 8GB 64Gb*1 MLC B-die E-die TLC M-die KLUDG8J1CB-B0B10** KLUCG4J1CB-B0B10** D-die 11.5 x 13.0 x 1.0 CS 11.5 x 13.0 x 1.2 MP 11.5 x 13.0 x 1.2 460/160 20K / 14K KLMEG8UERM-C0410** MP 11.5 x 13.0 x 1.0 CS KLMDG4UERM-B0410** KLMBG2JETD-B0410** KLMAG1JETD-B0410** F-die Status KLUBG4G1CE-B0B10** KLMCG4JETD-B0410** MLC mm Pkg Size (X,Y,Z) 320/150 22K / 18K CS in Dec / Jan 11.5 x 13.0 x 0.8 KLM8G1GETF-B0410** MMC5.1 is backwards compatible with 5.0 & 4.5 *Denotes bucket code for latest firmware patch 14 Mainstream eMMC, High-Performance eMMC & UFS 1H 2017 samsung.com/flash eMCP: eMMC + LPDDR3 Memory eMMC Density DRAM Density/Organization Voltage (eMMC-DRAM) Package 8GB 8Gb (x32) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 16GB 8Gb*2 (x32) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm 8Gb*4 (x32) 3.3V/1.8V - 1.8V/1.2V 221FBGA 11.5 x 13mm DRAM Density/Organization Voltage (eMMC-DRAM) Package 3.3V/1.8V - 1.8V/1.2V/0.6V 254FBGA 11.5 x 13mm 3.3V/1.8V - 1.8V/1.2V/0.6V 254FBGA 11.5 x 13mm 12Gb*4 (x32) 3.3V/1.8V - 1.8V/1.2V/0.6V 254FBGA 12 x 15mm DRAM Density/Organization Voltage (eMMC-DRAM) Package 3.3V/1.8V - 1.8V/1.2V 168FBGA 12x12mm 3.3V/1.8V - 1.8V/1.2V 136FBGA 10x10mm 3.3V/1.8V - 1.8V/1.2V 136FBGA 10x10mm 8Gb (x32) 6Gb*4 (x32) eMMC & MDRAM 8Gb*2 (x32) 32GB 6Gb*4 (x32) 8Gb*4 (x32) 64GB 128GB 6Gb*4 (x32) 8Gb*4 (x32) eMCP: eMMC + LPDDR4X eMMC Density 32GB eMMC & MDRAM 12Gb*2 (x32) 8Gb*4 (x32) 12Gb*2 (x32) 64GB 8Gb*4 (x32) MCPS Memory 12Gb*4 (x32) 128GB ePoP: eMMC + LPDDR3 Memory eMMC Density 4GB eMMC & MDRAM 4GB 8GB samsung.com/mcp 4Gb (x32) 6Gb (x32) 4Gb (x32) 6Gb (x32) 8Gb (x32) 1H 2017 Multi-Chip Packages 15 Solid State Drives (SSDs) Server & Cloud Datacenter LEGACY SERVERS ALL FLASH PRIMARY STORAGE Hard Disk Drive Replacement HIGH-DENSITY SERVERS LOW LATENCY PRIMARY STORAGE Next-Generation All Flash Array EXTREME PERFORMANCE SERIES Server-side Caching PM863a PM963 PM1633a PM1725a PM1725a SATA 3.0 @ 6 Gbit/s PCIe Gen 3 x4 @ 32Gbit/s (NVMe) SAS 3.0 @ 12 Gbit/s PCIe Gen 3 x4 @ 32Gbit/s (NVMe) PCIe Gen 3 x8 @ 64Gbit/s (NVMe) 2.5" M.2 (22x110mm) 2.5" 2.5" / U.2 Add-in Card (HHHL) 240/480/960/ 1920/3840 960/1920 480/960/1920/ 3840/7680/15360 3840/7680/15360 1600/3200/6400 1.3 DWPD for 3 Years 1.3 DWPD for 3 Years 1-3 DWPD for 5 Years 5 DWPD for 5 Years 5 DWPD for 5 Years 4W 7.5 W 13 W 25 W 23 W 1.3 W 2.5 W 7W 7W 7.7 W Random Reads (up to) 99,000 IOPS 430,000 IOPS 205,000 IOPS 740,000 IOPS 1,080,000 IOPS Random Writes (up to) 18,000 IOPS 40,000 IOPS 39,000 IOPS 70,000 IOPS 170,000 IOPS Sequential Reads (up to) 520 MB/s 2,000 MB/s 1,300 MB/s 3,100 MB/s 6,400 MB/s Sequential Writes (up to) 480 MB/s 1,800 MB/s 1,400 MB/s 3,000 MB/s 3,000 MB/s 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours 2.0 Million Hours 1 in 1017 1 in 1017 1 in 1017 1 in 1017 1 in 1017 100 x 70 x 7mm 22 x 110 x 4.15 mm 100 x 70 x 15 mm 100 x 70 x 15 mm 168 x 70 x 19 mm (HHHL) 55 g 20 g 160 g 160 g 330 g Host Interface Form Factor Capacity (GB) Endurance (up to) Power Consumption (Active) Power Consumption (Idle) MTBF Uncorrectable Bit Error Rate (UBER) Physical Dimensions Weight 16 Enterprise Solid State Drives 1H 2017 samsung.com/flash-ssd Drive Type Power-loss Protection Form Factor Interface Connector SATA 3.0 @ 6 Gbit/s Client PC/ Embedded No M.2 22 x 80 mm Product Family Capacity (GB) Part Number 256 MZNLN256HMHQ-00000 512 MZNLN512HMJP-00000 1024 MZNLN1T0HMLH-00000 128 MZVLV128HCGR-00000 256 MZVLV256HCHP-00000 512 MZVLV512HCJH-00000 240 MZ7LM240HMHQ-00005 480 MZ7LM480HMHQ-00005 960 MZ7LM960HMJP-00005 1920 MZ7LM1T9HMJP-00005 3840 MZ7LM3T8HMLP-00005 120 MZ7KM120HAFD-00005 240 MZ7KM240HAGR-00005 480 MZ7KM480HAHP-00005 960 MZ7KM960HAHP-00005 1920 MZ7KM1T9HAJM-00005 100 MZ7KM120HAFD-00005 200 MZ7KM240HAGR-00005 400 MZ7KM480HAHP-00005 800 MZ7KM960HAHP-00005 1600 MZ7KM1T9HAJM-00005 480 MZQLW480HMHQ-00003 960 MZQLW960HMJP-00003 1920 MZQLW1T9HMJP-00003 3840 MZQLW3T8HMLP-00003 960 MZQKW960HMJP-00003 1920 MZQKW1T9HMJP-00003 3840 MZQKW3T8HMLH-00003 800 MZQKW960HMJP-00003 1600 MZQKW1T9HMJP-00003 3200 MZQKW3T8HMLH-00003 480 MZ1LW480HMHQ-00003 960 MZ1LW960HMJP-00003 1920 MZ1LW1T9HMLS-00003 3.6 DWPD for 5 Years 960 MZ1KW960HMJP-00003 1920 MZ1KW1T9HMJP-00003 10 DWPD for 5 Years 800 MZ1KW960HMJP-00003 1600 MZ1KW1T9HMJP-00003 PM871a M.2 PCIe Gen 3 x4 @ 32Gbit/s (NVMe) PC Workload PM951 PM863a SATA 3.0 @ 6 Gbit/s Write Endurance 0.8 DWPD for 5 Years 3.6 DWPD for 5 Years SFF-8223 SM863 10 DWPD for 5 Years 2.5" 7mmT Datacenter Yes PM963 U.2 (SFF-8639) 0.8 DWPD for 5 Years 3.6 DWPD for 5 Years SM963 PCIe Gen 3x4 @ 32Gbit/s (NVMe) 10 DWPD for 5 Years PM963 M.2 22 x 110 mm M.2 0.8 DWPD for 5 Years SM963 samsung.com/flash-ssd 1H 2017 Solid State Drives STORAGE SOLID STATE DRIVES (SSD) 17 SOLID STATE DRIVES (SSD) continued Drive Type Power-loss Protection Form Factor Interface Product Family Connector Write Endurance 1 DWPD for 5 Years PM1633 3 DWPD for 5 Years SAS 3.0 @ 12 Gbit/s SFF-8680 2.5" 15mmT Enterprise Yes PM1633a PCIe Gen 3x4 @ 32Gbit/s (NVMe) U.2 (SFF-8639) PM1725a Add-in Card (HHHL) 18 Solid State Drives PCIe Gen 3 x8 @ 64Gbit/s (NVMe) 1 DWPD for 5 Years Edge Connector 1H 2017 5 DWPD for 5 Years Capacity (GB) Part Number 480 MZILS480HCGR-00003 960 MZILS960HCHP-00003 1920 MZILS1T9HCHP-00003 3840 MZILS3T8HCJM-00003 400 MZILS480HCGR-00003 800 MZILS960HCHP-00003 1600 MZILS1T9HCHP-00003 3200 MZILS3T8HCJM-00003 480 MZILS480HEGR-00007 960 MZILS960HEHP-00007 1920 MZILS1T9HEJH-00007 3840 MZILS3T8HMLH-00007 7680 MZILS7T6HMLS-00007 15360 MZILS15THMLS-00007 800 MZWLL800HEHP-00003 1600 MZWLL1T6HEHP-00003 3200 MZWLL3T2HMJP-00003 6400 MZWLL6T4HMLS-00003 1600 MZPLL1T6HEHP-00003 3200 MZPLL3T2HMJP-00003 6400 MZPLL6T4HMLT-00003 samsung.com/flash-ssd Public Information Display (PID) Product Classification Super Narrow Bezel (SNB)/ Ultra Narrow Bezel (UNB) Video Wall SNB: 5.9mm A-to-A UNB: 3.9mm A-to-A Indoor PID Narrow Bezel 40"/46"/55"/75" 700 nits Brightness E-Board PID Landscape Orientation 55"/70"/82" Edge LED AGAR Surface Treatment Outdoor PID High Brightness Full High Definition 110C Clearing Point Why PID instead of TV? COMMERCIAL (PID) CONSUMER (TV) WARRANTY 18 months to 2 years 90 days to 1 year RELIABILITY Public environments 20+ hours daily duty cycle Variety of temperatures & location 5-8 hour daily duty cycle Designed for in-home use in controlled environment In-home living room PRODUCTION LIFECYCLE 24-36 months 12-15 months PICTURE QUALITY Designed to resist image retention LCD backlight covers a wider color spectrum necessary for PC source integration, giving better picture quality AGAR coating for public viewing 120Hz / 240Hz for full-motion video Designed for TV signals Gloss surface treatment LOCATION Most models portrait capable Can only be oriented in landscape mode Product Segmentation SNB / UNB Indoor PID E-Board PID Outdoor PID LIGHT USE Professional Indoor Events Billboard * Control Room * Simulation * Scoreboard * Sports Broadcasting * Dynamic Signage Entertainment Transportation Communication * Casino * Theatre * Menu * Airport * Train/Bus Station * Conference Room Commercial Education Hospitality * Kiosk * Conference Systems * Interactive FPD * Hotel Signage Commercial Education Hospitality * Kiosk * Conference Systems * Interactive FPD * Hotel Signage DISPLAYS HEAVY USE Product Segmentation Type Class Warranty ENB / UNB / SNB Ultra / Super Narrow Bezel 2 years Bezel Suggested Run Time Brightness Usage Applications Value Tier 20+ hours 500-700 nits Heavy Video Walls Premium commercial range Indoor PID Indoor Commercial Panels 2 years 1.9mm - 5.9mm A-to-A Narrow E-Board Value, Large Format 18 months Normal Outdoor PID High Bright, Wide Temp 2 years Normal 20+ hours 2500-5000 nits Heavy Outdoor Specialty Value, Large Format 2 years Narrow 20+ hours 500/ 1500 nits specialty samsungdisplay.com samsung.com/flash-ssd 20+ hours 600/700 nits Medium Semi-Outdoor Mid-price range 12 hours 450 nits Daily Indoor, e-Board High-value commercial range Premium commercial range 1H 2017 Medium DID Panel Lineup, Tablets & Monitors 19 SAMSUNG DIGITAL INFORMATION DISPLAY (DID) PANEL LINEUP Category Model Size Model Bezel Resolution LTI460HN09-0 Super narrow LTI460HN11-A LTI460HN12-V SNB / UNB / ENB LTI460HN14-V LTI550HN12-V 55" Extreme narrow LTI550HN14-V LTI460HN08 LTI480HN01-0 LTI480HN02-0 Indoor PID FHD UHD 98" LTI550HN15-0 55" LTI700HA02-0 70" LTI750HF02-0 LTI460HF01-V 75" 55" LTI750HF01-V 75" LTI290LN02-0 LTI370LN03-V LTI370LN02-V Normal Normal eLED Narrow 60Hz Feb., '17 3.9mm Active to Active, LED 2.0mm Active to Active, LED Q2, '17 Now 3,000:1 3.9mm Active to Active, LED 3.9mm Active to Active, LED 500 nits 700 nits 60Hz Now 4,000:1 eLED, Landscape / Portrait 8ms 450 nits E-Board; Landscape/Portrait Slim eLED, Landscape / Portrait 400 nits 3,500:1 500 nits 5,000:1 500 nits 120Hz Landscape / Portrait 16. Q2 4,000:1 60Hz Jan., '17 380 nits 350 nits eLED 350 nits 2,500 nits Slim eLED,Landscape / Portrait eLED Landscape / Portrait Value PID 4,000:1 8ms 60Hz Now E-Board; Landscape mode only E-Board; Landscape mode only 4,000:1 3,000:1 60Hz 8ms 120Hz Now High Bright, Hi Temp LC, 1/4 Pol. 3,500 nits 500 nits Half FHD DID Panel Lineup 8ms 700 nits 450 nits D-LED Comment 55" D-LED 29" 37" 700 nits 5,000 nits FHD 3,000:1 600 nits eLED 46" LTH550HF04V(A) LTI290LN01-0 D-LED Narrow FHD 700 nits Slim eLED 500 nits 75" LTI980FN01-V LTI460HZ01-V 20 eLED LTI750HF02-0 LTI750FN02-N Specialty Slim eLED UHD LTI750FN01-V Outdoor eLED 55" Now 700 nits Ultra narrow 48" LTI550FN01-N LTI750FJ01-N E-Board FHD MP* 5.9mm Active to Active, LED 500 nits 55" 46" Frequency 500 nits 55" LTI550HN06 LTI550HN07-0 D-LED D-LED LTI550HN17-V Response Time 700 nits Ultra narrow LTI550HN13-V (Broadcast) Contrast Ratio 500 nits 46" FHD Brightness (typical) 500 nits Ultra narrow LTI460HN13-V LTI550HN11-V Backlight Narrow eLED 700 nits 4,000:1 1500 nits 16ms 60Hz Now Q1, '17 1H 2017 Stretched, 40"/2, Hi Temp LC Stretched, 46"/2, Hi Temp LC samsungdisplay.com Contacts Feel free to contact your local distributor or sales representative with any Samsung sales inquiries. Adelsa | www.adetronics.com.mx PRODUCTS ADDRESS Memory, SLSI, LCD MEXICO ATMI Sales | MAIN PHONE Hacienda Corralejo #80, Bosque de Echegaray, Naucalpan, Mexico 53310 FAX 52-555-560-5002 GUADALAJARA OFFICE 52-333-122-3054 MONTERREY OFFICE 52-818-214-0011 CD. JUAREZ OFFICE 52-656-613-3517 REYNOSA OFFICE 52-899-922-5540 www.atmisales.com PRODUCTS ADDRESS Memory, SLSI, LCD OREGON WASHINGTON Bear VAI Technology | MAIN PHONE FAX 4900 S.W. Griffith Drive, Suite 253 Beaverton, OR 97005 1-800-898-2446, 503-643-8307 503-643-4364 8581 154th Avenue NE Redmond WA 98052 425-869-7636 425-869-9841 MAIN PHONE FAX www.bearvai.com PRODUCTS ADRRESS Memory, SLSI, LCD MAIN OFFICE BRECKSVILLE, OHIO 6910 Treeline Drive, Unit H Brecksville, OH 44141 440-526-1991 440-526-5426 MAIN OFFICE INDIANA 11451 Overlook Drive Fishers, IN 46037 440-832-7637 317-845-8650 MICHIGAN 5506 Alpine Ridge Stevensville, MI 49127 440-526-1991 440-526-5426 MAIN PHONE FAX 303-280-7202 720-482-2220 Crestone Technology Group | PRODUCTS ADDRESS Memory, SLSI, LCD COLORADO www.crestonegroup.com 7108 S. Alton Way, Building L, Suite A Centennial, CO 80112 UTAH www.customer1st.com PRODUCTS ADDRESS Memory, SLSI, LCD MINNESOTA 2950 Metro Drive, Suite 101 Bloomington, MN 55425 KANSAS 2111 E. Crossroad Lane, #202 Olathe, KS 66062 MAIN PHONE FAX 952-851-7909 952-851-7907 CONTACTS Customer 1st | 801-973-8909 For all product information please visit: www.samsung.com/us/samsungsemiconductor samsung.com/semiconductor/sales-network 1H 2017 Contacts 21 InTELaTECH | www.intelatech.com PRODUCTS ADDRESS MAIN PHONE FAX Memory, SLSI 2113 St. Regis, Suite 240, Dollard Des Ormeaux, QC Canada H9B 2M9 905-629-0082 905-629-1795 5225 Orbitor Drive, Mississauga, Ont, Canada L4W 4Y8 905-629-0082 905-624-6909 I-Squared Incorporated | www.isquared.com PRODUCTS ADDRESS MAIN PHONE FAX Memory, SLSI, LCD 2635 N. 1st Street, Suite 128, San Jose, CA 95134 408-988-3400 408-988-2079 1250 B Street, Petaluma, CA 94952 707-773-3108 PRODUCTS ADDRESS MAIN PHONE FAX Memory, SLSI, LCD 320 W. Frontage Rd, Northfield, IL 60093 847-967-8430 847-967-5903 IRI Rep | www.irirep.com IRI WEST | www.iriwest.com PRODUCTS ADDRESS MAIN PHONE FAX Memory, SLSI, LCD AUSTIN 810 Hesters Crossing Rd, Suite 200 Round Rock, TX 78681 512-343-1199 512-343-1922 DALLAS 2745 Dallas Pkwy, Suite 460 Plano, TX 75093 972-680-2800 972-699-0330 HOUSTON 24624 Interstate 45 North, Suite 200 Spring, TX 77386 832-940-9600 512-343-1922 Neptune Electronics (necco) | www.neccoelect.com PRODUCTS ADDRESS MAIN PHONE FAX Memory, SLSI, LCD 11 Oval Drive, Suite 169, Islandia, NY 11749 631-234-2525 631-234-2707 New Tech Solutions PRODUCTS ADDRESS MAIN PHONE FAX Memory, SLSI, LCD 26 Ray Avenue, Burlington, MA 01803 781-229-8888 781-229-1614 MAIN PHONE FAX 256-539-7371 256-533-4509 Rep One Associates, Inc. | PRODUCTS ADDRESS Memory, SLSI, LCD ALABAMA www.repone.com 403 Madison St. Huntsville, AL 3580 FLORIDA Tech Coast Sales | 704 516-0242 GEORGIA 3000 Langford Road, Building 300 Norcross, GA 30071 770-209-9242 678-591-6753 NORTH & SOUTH CAROLINA 912 Oleander Lane Waxhaw, NC 28173 704 516-0242 770-209-9245 www.tc-sales.com PRODUCTS ADDRESS MAIN PHONE EMAIL Memory, SLSI, LCD 23121 Verdugo Drive, Suite 101, Laguna Hills, CA 92653 949-305-6869 sales@tc-sales.com 22 Contacts 1H 2017 samsung.com/semiconductor/sales-network Notes samsung.com/semiconductor/sales-network 1H 2017 Notes 23 Samsung Semiconductor, Inc. 3655 North First Street San Jose, CA 95134-1713 samsung.com/us/oem-solutions Disclaimer: The information in this publication has been carefully checked and is believed to be accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or omissions, or for any consequences resulting from the use of the information contained herein. Samsung reserves the right to make changes in its products or product specifications with the intent to improve function or design at any time and without notice and is not required to update this documentation to reflect such changes. This publication does not convey to a purchaser of semiconductor devices described herein any license under the patent rights of Samsung or others. Samsung makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Samsung assume any liability arising out of the application or use of any product or circuit and specifically disclaims any and all liability, including without limitation any consequential or incidental damages. Copyright 2016. Samsung and Samsung Semiconductor, Inc. are registered trademarks of Samsung Electronics, Co., Ltd. Ultrabooks is a trademark of Intel Corporation. All other names and brands may be claimed as the property of others. The appearance of all products, dates, figures, diagrams and tables are subject to change at any time, without notice. BR-16-ALL-001 | Printed 1/17