MOC8021M, MOC8050M 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Features Description High BVCEO: The MOC8021M and MOC8050M are photodarlingtontype optically coupled optocouplers. The devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor. - Minimum 50 V (MOC8021M) - Minimum 80 V (MOC8050M) High Current Transfer Ratio: - Minimum 1000% (MOC8021M) - Minimum 500% (MOC8050M) No Base Connection for Improved Noise Immunity Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Applications Appliances, Measuring Instruments I/O Interface for Computers Programmable Controllers Portable Electronics Interfacing and Coupling Systems of Different Potentials and Impedance Solid State Relays Schematic Package Outlines 6 N/C ANODE 1 5 COLLECTOR CATHODE 2 N/C 3 4 EMITTER Figure 2. Package Outlines Figure 1. Schematic (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) April 2015 As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for "safe electrical insulation" only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Characteristics < 150 VRMS I-IV < 300 VRMS I-IV Climatic Classification 55/100/21 Pollution Degree (DIN VDE 0110/1.89) 2 Comparative Tracking Index Symbol 175 Value Unit Input-to-Output Test Voltage, Method A, VIORM x 1.6 = VPR, Type and Sample Test with tm = 10 s, Partial Discharge < 5 pC 1360 Vpeak Input-to-Output Test Voltage, Method B, VIORM x 1.875 = VPR, 100% Production Test with tm = 1 s, Partial Discharge < 5 pC 1594 Vpeak VIORM Maximum Working Insulation Voltage 850 Vpeak VIOTM Highest Allowable Over-Voltage VPR Parameter 6000 Vpeak External Creepage 7 mm External Clearance 7 mm External Clearance (for Option TV, 0.4" Lead Spacing) 10 mm DTI Distance Through Insulation (Insulation Thickness) 0.5 mm TS Case Temperature(1) 175 C IS,INPUT Current(1) 350 mA 800 mW Input PS,OUTPUT Output RIO Power(1) Insulation Resistance at TS, VIO = 500 V(1) > 109 Note: 1. Safety limit values - maximum values allowed in the event of a failure. (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 2 MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Safety and Insulation Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Value Unit -40 to +125 C TOTAL DEVICE TSTG TOPR TJ TSOL PD Storage Temperature Operating Temperature -40 to +100 C Junction Temperature -40 to +125 C 260 for 10 seconds C Total Device Power Dissipation @ TA = 25C 270 mW Derate Above 25C 2.94 mW/C Lead Solder Temperature EMITTER IF DC/Average Forward Input Current 60 mA VR Reverse Input Voltage 3 V LED Power Dissipation @ TA = 25C 120 mW Derate Above 25C 1.41 mW/C Continuous Collector Current 150 mA Collector-Emitter Voltage MOC8021M 50 V PD DETECTOR IC VCEO MOC8050M PD 80 V Detector Power Dissipation @ TA = 25C 150 mW Derate Above 25C 1.76 mW/C (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 3 MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Absolute Maximum Ratings TA = 25C Unless otherwise specified. Individual Component Characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit EMITTER VF Input Forward Voltage IF = 10 mA 1.18 2.00 V IR Reverse Leakage Current VR = 3.0 V 0.001 10 A DETECTOR BVCEO Collector-Emitter Breakdown Voltage MOC8021M IC = 1.0 mA, IF = 0 MOC8050M Emitter-Collector Breakdown Voltage IE = 100 A, IF = 0 ICEO Collector-Emitter Dark Current VCE = 60 V, IF = 0 CCE Capacitance VCE = 0 V, f = 1 MHz BVECO Transfer Characteristics Symbol Parameter Test Conditions 50 100 V 80 100 V 5 10 V 1 A 8 Min. Typ. pF Max. Unit DC CHARACTERISTICS Current Transfer Ratio, Collector to Emitter CTR MOC8021M IF = 10 mA, VCE = 5 V MOC8050M IF = 10 mA, VCE = 1.5 V 1,000 % 500 % AC CHARACTERISTICS ton Turn-on Time IF = 5 mA, VCC = 10 V, RL = 100 8.5 s toff Turn-off Time IF = 5 mA, VCC = 10 V, RL = 100 95 s Isolation Characteristics Symbol Characteristic Test Conditions VISO Input-Output Isolation Voltage t = 1 Minute CISO Isolation Capacitance RISO Isolation Resistance (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 Min. Typ. 4170 VI-O = 0 V, f = 1 MHz VI-O = 500 VDC, TA = 25C Unit VACRMS 0.2 1011 Max. pF www.fairchildsemi.com 4 MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Electrical Characteristics NORMALIZED CTR - CURRENT TRANSFER RATIO 1.8 VF - FORWARD VOLTAGE (V) 1.6 1.4 TA = -40oC 1.2 TA = 25oC 1.0 TA = 110oC 0.8 0.6 0.1 1 10 100 Normalized to IF = 10 mA VCE = 10 V o TA = 25 C o o o TA = -40 C TA = 0 C, 25 C 1 o TA = 70 C TA = 110oC 0.1 0.1 1 IF - LED FORWARD CURRENT (mA) 10 100 IF - FORWARD CURRENT (mA) Figure 4. Normalized CTR vs. Forward Current Figure 3. LED Forward Voltage vs. Forward Current 1.6 IF = 10 mA = 10 V V Normalized to TA = 25 C CE 1.4 VCC = 10 V RL = 1k o TA = 25oC 100 TON - TURN-ON TIME (s) NORMALIZED CTR - CURRENT TRANSFER RATIO 1000 1.2 1.0 0.8 RL = 100 RL = 10 10 1 0.6 0.4 -40 -20 0 20 40 60 80 100 0.1 0.1 120 1 10 100 IF - FORWARD CURRENT (mA) Figure 5. Normalized CTR vs. Ambient Temperature Figure 6. Turn-on Time vs. Forward Current NORMALIZED ICE - COLLECOTR-EMITTER CURRENT TA - AMBIENT TEMPERATURE (C) VCC = 10V o TA = 25 C TOFF - TURN-ON TIME (s) 1000 RL = 1K 100 RL = 100 RL = 10 10 1 0 1 10 16 Normalized to: IF = 1 mA, VCE = 5V o TA = 25 C 14 IF = 10 mA 12 10 IF = 5 mA 8 6 4 IF = 2 mA 2 IF = 1 mA 0 100 0 1 2 3 4 5 6 7 8 9 10 IF - FORWARD CURRENT (mA) VCE - COLLECTOR-EMITTER VOLTAGE (V) Figure 7. Turn-off Time vs. Forward Current Figure 8. Normalized Collector-Emitter Current vs. Collector-Emitter Voltage (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 5 MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Typical Performance Curves ICEO - COLLECTOR -EMITTER DARK CURRENT (nA) 100,000 V = 10 V CE 10,000 1.000 100 10 1 0.1 0.01 -40 -20 0 20 40 60 80 100 120 TA - AMBIENT TEMPERATURE (C) Figure 9. Dark Current vs. Ambient Temperature Switching Time Test Circuit and Waveform TEST CIRCUIT WAVE FORMS VCC = 10 V INPUT PULSE IC IF INPUT RL 10% OUTPUT OUTPUT PULSE 90% RBE tr ton tf toff Adjust IF to produce IC = 2 mA Figure 10. Switching Time Test Circuit and Waveform (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 6 MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Typical Performance Curves (Continued) MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Reflow Profile 300 260C 280 260 > 245C = 42 s 240 220 200 180 C Time above 183C = 90 s 160 140 120 1.822C/s Ramp-up rate 100 80 60 40 33 s 20 0 0 60 120 180 270 360 Time (s) Figure 11. Reflow Profile (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 7 Part Number Package Packing Method MOC8021M DIP 6-Pin Tube (50 Units) MOC8021SM SMT 6-Pin (Lead Bend) Tube (50 Units) MOC8021SR2M SMT 6-Pin (Lead Bend) Tape and Reel (1000 Units) MOC8021VM DIP 6-Pin, DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC8021SVM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tube (50 Units) MOC8021SR2VM SMT 6-Pin (Lead Bend), DIN EN/IEC60747-5-5 Option Tape and Reel (1000 Units) MOC8021TVM DIP 6-Pin, 0.4" Lead Spacing, DIN EN/IEC60747-5-5 Option Tube (50 Units) Note: 2. The product orderable part number system listed in this table also applies to the MOC8050M device. Marking Information 1 V 3 MOC8021 2 X YY Q 6 5 4 Figure 12. Top Mark Table 1. Top Mark Definitions 1 Fairchild Logo 2 Device Number 3 DIN EN/IEC60747-5-5 Option (only appears on component ordered with this option) 4 One-Digit Year Code, e.g., "5" 5 Digit Work Week, Ranging from "01" to "53" 6 Assembly Package Code (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 8 MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Ordering Information MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Package Dimensions Figure 13. 6-pin DIP Through Hole (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 9 MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Package Dimensions (Continued) Figure 14. 6-pin DIP Surface Mount (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 10 MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) Package Dimensions (Continued) Figure 15. 6-pin DIP 0.4" Lead Spacing (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 11 MOC8021M, MOC8050M -- 6-Pin DIP Photodarlington Optocoupler (No Base Connection) (c)2000 Fairchild Semiconductor Corporation MOC8021M, MOC8050M Rev. 3.2 www.fairchildsemi.com 12