1. Product profile
1.1 General description
130 W LDMOS power transistor for base station applications at frequencies from
2000 MHz to 2200 MHz.
[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
[2] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Designed for broadband operation (2000 MHz to 2200 MHz)
Lower output capacitance for improved performa nce in Doherty applications
Designed for low memory effects providing excellent digital pre-distortion capa bility
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, rega rd in g Re str ictio n of Haza rd ous Sub s tances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
BLF7G22L-130;
BLF7G22LS-130
Power LDMOS transistor
Rev. 4 — 20 January 2011 Product data sheet
Table 1. Typical performance
Ty pical RF performance at Tcase = 25
°
C in a common source class-AB production test circuit.
Mode of operation f IDq VDS PL(AV) GpηDACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 950 28 30 18.5 32 −32[1]
1-carrier W-CDMA 2110 to 2170 950 28 33 18.5 33 −39[2]
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 2 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF7G22L-130 (SOT 502A)
1drain
2gate
3source [1]
BLF7G22LS-130 (SOT502B)
1drain
2gate
3source [1]
3
2
1
sym11
2
1
3
2
3
2
1
sym11
2
1
3
2
Table 3. Ordering informati on
Type number Package
Name Description Version
BLF7G22L-130 - flanged LDMOST ceramic package; 2 mounting holes;
2 leads SOT502A
BLF7G22LS-130 - earless flanged LDMOST ceramic package; 2 leads SOT502B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 28 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 3 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Test information
7.1 Ruggedness in class-AB operation
The BLF7G22L-130 and BLF7G22LS-130 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS =28V; I
Dq =950mA; P
L= 130 W (CW); f = 2110 MHz.
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80°C; PL=30W 0.35 K/W
Table 6. Characteristics
Tj = 25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-sour ce breakdown vol tage VGS =0V; I
D=1.5mA 65 - - V
VGS(th) gate-source threshold voltage VDS = 10 V; ID= 150 mA 1.3 1.8 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 5 μA
IDSX drain cut-off current VGS =V
GS(th) + 3.75 V;
VDS =10V 25 29.5 - A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 450 nA
gfs forward transconductance VDS =10V; I
D=7.5A - 10 11 S
RDS(on) dr ain - so urce on-st a te resistance VGS =V
GS(th) + 3.75 V;
ID=5.25A - 0.1 0.16 Ω
Table 7. Functional test information
Mode of operation: 2-carrier W-CDMA; PAR = 8.4 dB at 0.01 % probability on the CCDF; 3GPP test
model 1 ; 64 DPCH; f1=2112.5MHz; f
2= 2117.5 MHz; f3= 2162.5 MHz; f4= 2167.5 MHz;
RF performance at VDS =28V; I
Dq = 950 mA; Tcase =25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average out pu t po w e r - 30 - W
Gppower gain PL(AV) =30W 17 18.5 - dB
RLin input return loss PL(AV) =30W - −15 −9dB
ηDdrain efficiency PL(AV) =30W 29 32 - %
ACPR adjacent channel power ratio PL(AV) =30W - −31 −28 dBc
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 4 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.2 Impedance information
Table 8. Typical impedance information
IDq = 950 mA; main transistor VDS =28V.
ZS and ZL defined in Figure 1.
f
(MHz) ZS
(Ω)ZL
(Ω)
2050 1.3 − j3.6 2.2 − j2.6
2140 1.9 − j4.2 2.0 − j2.6
2230 3.1 − j4.7 1.9 − j2.8
Fig 1. Definition of transis tor imp e da nc e
001aaf05
9
drain
ZL
ZS
gate
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 5 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.3 1 Tone CW
VDS = 28 V; IDq = 950 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
VDS = 28 V; IDq = 950 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 2. Power gain as a function of load power;
typical values Fig 3. Drain efficiency as a function of load power;
typical values
VDS = 28 V; IDq = 950 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 4. Input return loss as a function of load power; typical values
PL (W)
0 16012040 80
001aal341
16
17
15
18
19
Gp
(dB)
14
(1)
(2)
(3)
PL (W)
0 16012040 80
001aal342
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal352
PL (W)
0
RLin
(dB)
−30
−20
−10
07030 6040 5010 20
(3)
(2)
(1)
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 6 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.4 1-carrier W-CDMA
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF.
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
Fig 5. Power gain as a function of load power;
typical values Fig 6. Drain efficiency as a function of load power;
typical values
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
VDS = 28 V; IDq = 950 mA.
(1) f = 2112.5 MHz
(2) f = 2140 MHz
(3) f = 2167.5 MHz
Fig 7. Adjacent channel power ratio (5MHz) as a
function of load power; typical values Fig 8. Peak-to-avera ge power ratio as a function of
load power; typical values
001aal345
PL (W)
0906030
17
18
16
19
20
Gp
(dB)
15
(3)
(2)
(1)
001aal346
PL (W)
0906030
20
40
60
ηD
(%)
0
(1)
(2)
(3)
001aal348
PL (W)
0906030
−40
−20
0
ACPR5M
(dBc)
−60
(1)
(2)
(3)
001aal347
PL (W)
0906030
4
2
6
8
PA R
(dB)
0
(1)
(2)
(3)
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 7 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.5 2-carrier W-CDMA (5 MHz carrier spacing)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz.
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz.
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
Fig 9. Power gain as a function of load power;
typical values Fig 10. drain efficiency as a function of load power;
typical values
VDS = 28 V; IDq = 950 mA; carrier spacing 5 MHz.
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
Fig 11. Adjacent channel power ratio (5 MHz) as a function of load power; typical values
001aal351
PL (W)
20
Gp
(dB)
15
17
19
16
18
07030 6040 5010 20
(3)
(2)
(1)
001aal353
20
30
10
40
50
ηD
(%)
0
PL (W)
07030 6040 5010 20
(1)
(2)
(3)
001aal354
PL (W)
0
ACPR5M
(dBc)
−60
−40
−20
07030 6040 5010 20
(1) (3)(2)
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 8 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.6 2-carrier W-CDMA (10 MHz carrier spacing)
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF.
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz.
(1) f = 2117.5 MHz
(2) f = 2140 MHz
(3) f = 2162.5 MHz
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz.
(1) f = 2117.5 MHz
(2) f = 2140 MHz
(3) f = 2162.5 MHz
Fig 12. Power gain as a function of load power;
typical values Fig 13. Drain efficiency as a function of load power;
typical values
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz.
(1) f = 2117.5 MHz
(2) f = 2140 MHz
(3) f = 2162.5 MHz
VDS = 28 V; IDq = 950 mA; carrier spacing 10 MHz.
(1) f = 2117.5 MHz
(2) f = 2140 MHz
(3) f = 2162.5 MHz
Fig 14. Adj ac e nt ch a nne l powe r ratio (5 MHz) as a
function of load power; typical values Fig 15. Adjacent channel power ratio (10 MHz) as a
function of load power; typical values
001aal355
PL (W)
20
Gp
(dB)
15
17
19
16
18
07030 6040 5010 20
(3)
(2)
(1)
001aal356
20
30
10
40
50
ηD
(%)
0
PL (W)
07030 6040 5010 20
(1)
(2)
(3)
001aal357
PL (W)
0
ACPR5M
(dBc)
−60
−40
−20
07030 6040 5010 20
(1) (3)(2)
001aal358
PL (W)
0
ACPR10M
(dBc)
−60
−40
−20
07030 6040 5010 20
(1) (3)(2)
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 9 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
7.7 Test circuit
See Table 9 for list of components. The drawing is not to scale.
Fig 16. Component layout
C2
C1
R1
001aal35
9
BLF7G22LS-130 INPUT V1
RO4350 30MIL RSN
BLF7G22LS-130 OUTPUT V1
RO4350 30MIL RSN
C3 C8 C9
C11
C4 C7 C10
C5
C6
Table 9. List of components
See Figure 16 for component layout.
Component Description Value Remarks
C1, C2, C3, C4, C5 multilayer ceramic chip capacitor 9.1 pF ATC100B
C6, C7 multilayer ceramic chip capacitor 220 nF AVX1206
C8, C9, C10 multilayer ceramic chip capacitor 4.7 μF; 50 V Kemet
C11 electrolytic capacitor 220 μF; 63 V BC
R1 SMD resistor 6.2 ΩPhilips 1206
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 10 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
8. Package outline
Fig 17. Package outline SOT502A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502A 99-12-28
03-01-10
0 5 10 mm
scale
Flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT502
A
p
L
A
F
b
D
U2
H
Q
c
1
3
2
D1
E
A
C
q
U1
C
B
E1
M M
w2
UNIT A
mm
Db
12.83
12.57
0.15
0.08
20.02
19.61
9.53
9.25
19.94
18.92
9.91
9.65
4.72
3.43
cU2
0.25 0.5127.94
qw
2
w1
F
1.14
0.89
U1
34.16
33.91
L
5.33
4.32
p
3.38
3.12
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495
0.006
0.003
0.788
0.772
D1
19.96
19.66
0.786
0.774
0.375
0.364
0.785
0.745
0.390
0.380
0.186
0.135 0.01 0.021.100
0.045
0.035
1.345
1.335
0.210
0.170
0.133
0.123
0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
w1AB
M M M
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 11 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
Fig 18. Package outline SOT502B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT502B 03-01-10
07-05-09
0 5 10 mm
scale
Earless flanged LDMOST ceramic package; 2 leads SOT502
B
A
F
b
D
U2
L
H
Q
c
1
3
2
D1
E
D
U1
D
E1
M M
w2
UNIT A
mm
Db
12.83
12.57
0.15
0.08
20.02
19.61
9.53
9.25
19.94
18.92
9.91
9.65
4.72
3.43
cU2
0.25
w2
F
1.14
0.89
U1
20.70
20.45
L
5.33
4.32
Q
1.70
1.45
EE
1
9.50
9.30
inches 0.505
0.495
0.006
0.003
0.788
0.772
D1
19.96
19.66
0.786
0.774
0.375
0.364
0.785
0.745
0.390
0.380
0.186
0.135 0.010
0.045
0.035
0.815
0.805
0.210
0.170
0.067
0.057
0.374
0.366
H
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 12 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
9. Abbreviations
10. Revision history
Table 10. Abbreviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor
PAR Peak-to-Average power Ratio
RF Radio Frequency
SMD Surface Mounted Device
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Access
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF7G22L-130_7G22LS-1 30 v.4 20110120 Product data sheet - BLF7G22LS-130 v.3
Modifications: •Table 7 on page 3: the maximum value of RLin has been corrected to −9 dB.
BLF7G22L-130_7G22LS-1 30 v.3 20101118 Product data sheet - BLF7G22LS-130 v.2
BLF7G22L-130_7G22LS-1 30 v.2 20101004 Product data sheet - BLF7G22LS-130 v.1
BLF7G22LS-130 v.1 20100202 Product data sheet - -
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 13 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
11. Legal information
11.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
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Short data sheet — A short data sheet is an extract from a full data sheet
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full information. For detailed and full information see the relevant full data
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress rating s only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
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the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specificat ion.
Product [short] data sheet Production This document contains the product specification.
BLF7G22L-130_7G22LS-130 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 January 2011 14 of 15
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors prod uct is automotive qualified,
the product is not suitable for automo tive use. It i s neit her qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or app lications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or failed product cl aims resulting fr om customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
11.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF7G22L-130; BLF7G22LS-130
Power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 January 2011
Document identifier: BLF7G22L-130_7G22LS-130
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
13. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB opera tio n . . . . . . . . . 3
7.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
7.3 1 Tone CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.4 1-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
7.5 2-carrier W-CDMA (5 MHz carrier spacing) . . . 7
7.6 2-carrier W-CDMA (10 MHz carrier spacing) . . 8
7.7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
9 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
11 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
11.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
11.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Contact information. . . . . . . . . . . . . . . . . . . . . 14
13 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
