SOT23 P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 3 - JANUARY 1996
PARTMARKING DETAIL MX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage VDS -45 V
Continuous Drain Current at Tamb
=25°C ID-90 mA
Pulsed Drain Current IDM -1.6 A
Gate Source Voltage VGS ± 20 V
Power Dissipation at Tamb
=25°C Ptot 330 mW
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Drain-Source
Breakdown Voltage
BVDSS -45 -70 V ID=-100µA, VGS
=0V
Gate-Source Threshold
Voltage
VGS(th) -1 -3.5 V ID=-1mA, VDS= VGS
Gate-Body Leakage IGSS -20 nA VGS=-15V, VDS=0V
Zero Gate Voltage Drain
Current
IDSS -0.5. µAVDS=-25V, VGS=0V
Static Drain-Source On-State
Resistance (1)
RDS(on) 914
ΩVGS
=-10V,ID=-200mA
Forward Transconductance
(1)(2)
gfs 90 mS VDS=-10V,ID=-200mA
Input Capacitance (2) Ciss 25 pF VDS=-10V, VGS=0V,
f=1MHz
Turn-On Delay Time (2)(3) td(on) 10 ns
VDD
≈-25V, ID=-200mA
Rise Time (2)(3) tr10 ns
Turn-Off Delay Time (2)(3) td(off) 10 ns
Fall Time (2)(3) tf10 ns
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% (2) Sample test.
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
BS250F
D
G
S
SOT23
3 - 55
BS250F
3 - 57
BS250F
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source Voltage (Volts)
I
D
- Drain Current (Amps)
-0.8
-0.6
-0.4
0
-0.2
-1.0
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
ID=0.37A
0-2 -4 -6 -8 -10
-1.0
-0.8
-0.6
-0.4
0
-0.2
0 -10 -20 -30 -40 -50
Saturation Characteristics
On-resistance vs Drain C urrent
I
D-
Drain Current
(mA)
-6
0
-2
-4
-8
0-2 -4-6-8-10
-10
V
DS-
Drain Source
Voltage (Volts)
RDS(on)-Drain Source On Resistance
(Ω)
Voltage Satura ti on Charac te ris tics
V
GS-
Gate Source Voltage
(Volts)
-0.6
0
-0.2
-0.4
-0.8
0-2-4-6-8-10
-1.0
VGS=-20V
-16V
-6V -7V
-8V
-5V
-4V
-16V
-9V
ID=
-400mA
-200mA
-100mA
VDS=-10V
V
GS-
Gate Source Voltage (Volts)
VGS=-10V
ID=-1mA
VGS=VDS
-1.2
-10V-9V
-10V
-6V
2.6
180
10
1
100
-10 -100 -1000
VGS=-5V
VGS=-20V
-15V
-20V
-7V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
VGS=
-14V
-12V
I
D
- Drain Current (Amps)
V
DS
- Drain Source Voltage (Volts)
I
D(On)-
On-State Drain Current (Amps)
TYP I CAL CHARA CT E RI STICS
T ransconductance v drain current
I
D
- Drain Current (Amps)
g
fs
-Transconductance (mS)
80
60
40
0
20
100
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-6
-8
-10
-14
-16
-12
-4
-2
0 0.5 1.0 1.5
0
Q-Gate Charge (nC)
120
Note:VDS=-10V
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
fs
-Transconductance (mS)
80
60
40
0
20
100
0-1 -2 -3 -4 -5 -6 -7 -8 -9 -10
120
Note:VDS=-10V
40
30
20
0
10
50
60
0 -10 -20 -30 -40 -50 -60 -70
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Note:VGS=0V
f=1MHz
Ciss
Coss
Crss
V
GS
-Gate Source Voltage (Volts)
1
2
Gate charge v gate-source voltage
VDS=
-20V
Note:ID=- 0.2A
-40V -60V
3 - 56
BS250F
3 - 57
BS250F
TYPICAL CHARACTERISTICS
Output Characteristics
V
DS
- Drain Source Voltage (Volts)
I
D
- Drain Current (Amps)
-0.8
-0.6
-0.4
0
-0.2
-1.0
Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
vs Temperature
Junction Temperature (°C)
Normalised R
DS(on)
and V
GS(th)
-40 -20 0 20 40 60 80 120
100 140 160
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.6
0.8
Drain-Source Resistance R
DS(on)
Gate Threshold Voltage V
GS(TH)
ID=0.37A
0-2 -4 -6 -8 -10
-1.0
-0.8
-0.6
-0.4
0
-0.2
0 -10 -20 -30 -40 -50
Saturation Characteristics
On-resistance vs Drain C urrent
I
D-
Drain Current
(mA)
-6
0
-2
-4
-8
0-2 -4-6-8-10
-10
V
DS-
Drain Source
Voltage (Volts)
RDS(on)-Drain Source On Resistance
(Ω)
Voltage Satura ti on Charac te ris tics
V
GS-
Gate Source Voltage
(Volts)
-0.6
0
-0.2
-0.4
-0.8
0-2-4-6-8-10
-1.0
VGS=-20V
-16V
-6V -7V
-8V
-5V
-4V
-16V
-9V
ID=
-400mA
-200mA
-100mA
VDS=-10V
V
GS-
Gate Source Voltage (Volts)
VGS=-10V
ID=-1mA
VGS=VDS
-1.2
-10V-9V
-10V
-6V
2.6
180
10
1
100
-10 -100 -1000
VGS=-5V
VGS=-20V
-15V
-20V
-7V
-6V
-7V
-8V
-10V
-12V
-5V
-4.5V
-14V
VGS=
-14V
-12V
I
D
- Drain Current (Amps)
V
DS
- Drain Source Voltage (Volts)
I
D(On)-
On-State Drain Current (Amps)
TYP I CAL CHARA CT E RI STICS
T ransconductance v drain current
I
D
- Drain Current (Amps)
g
fs
-Transconductance (mS)
80
60
40
0
20
100
0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
-6
-8
-10
-14
-16
-12
-4
-2
0 0.5 1.0 1.5
0
Q-Gate Charge (nC)
120
Note:VDS=-10V
Transconductance v gate-source voltage
V
GS
-Gate Source Voltage (Volts)
g
fs
-Transconductance (mS)
80
60
40
0
20
100
0-1 -2 -3 -4 -5 -6 -7 -8 -9 -10
120
Note:VDS=-10V
40
30
20
0
10
50
60
0 -10 -20 -30 -40 -50 -60 -70
V
DS
-Drain Source Voltage (Volts)
Capacitance v drain-source voltage
C-Capacitance (pF)
Note:VGS=0V
f=1MHz
Ciss
Coss
Crss
V
GS
-Gate Source Voltage (Volts)
1
2
Gate charge v gate-source voltage
VDS=
-20V
Note:ID=- 0.2A
-40V -60V
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