DHG50X1200NA - LITTELFUSE

DHG50X1200NA

preliminary

2

3

1

4

Low Loss and Soft Recovery

High Performance Fast Recovery Diode

Parallel legs

Sonic Fast Recovery Diode

Part number

DHG50X1200NA

Backside: Isolated

FAV

rr

t ns200

RRM

25

1200

=

V=V

I=A

2x

Features / Advantages: Applications: Package:

● Planar passivated chips

● Very low leakage current

● Very short recovery time

● Improved thermal behaviour

● Very low Irm-values

● Very soft recovery behaviour

● Avalanche voltage rated for reliable

operation

● Soft reverse recovery for low EMI/RFI

● Low Irm reduces:

- Power dissipation within the diode

- Turn-on loss in the commutating switch

● Antiparallel diode for high frequency

switching devices

● Antisaturation diode

● Snubber diode

● Free wheeling diode

● Rectifiers in switch mode power

supplies (SMPS)

● Uninterruptible power supplies (UPS)

SOT-227B (minibloc)

● Industry standard outline

● RoHS compliant

● Epoxy meets UL 94V-0

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Isolation Voltage: V~

3000

Information furnished is believed to be accurate and reliable. However, users should independently

evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,

and may not be used in, all applications. Read complete Disclaimer Notice at

Disclaimer Notice

www.littelfuse.com/disclaimer-electronics.

IXYS reserves the right to change limits, conditions and dimensions. 20200213cData according to IEC 60747and per semiconductor unless otherwise specified

DHG50X1200NA

preliminary

ns

23 A

T

VJ

= °C

reverse recovery time

A30

200

350

ns

I

RM

max. reverse recovery current

I

F

= A;30

25

T = 125 °C

VJ

-di

F

= A/µs600/dt

t

rr

V

R

= V600

T

VJ

= °C25

T = 125 °C

VJ

V = V

Symbol

Definition

Ratings

typ.

max.

I

R

V

IA

V

F

2.11

R1.2 K/W

R

min.

25

V

RSM

V

30T = 25°C

VJ

T = °C

VJ

mA0.5V = V

R

T = 25°C

VJ

I = A

F

V

T = °C

C

65

P

tot

100 WT = 25°C

C

RK/W

25

1200

max. non-repetitive reverse blocking voltage

reverse current, drain current

forward voltage drop

total power dissipation

Conditions

Unit

2.74

T = 25°C

VJ

125

V

F0

V

1.23T = °C

VJ

150

r

F

30

mΩ

V

2.09T = °C

VJ

I = A

F

V

25

2.88

I = A

F

50

I = A

F

50

threshold voltage

slope resistance for power loss calculation only

µA

125

V

RRM

V

1200

max. repetitive reverse blocking voltage

T = 25°C

VJ

C

J

11

junction capacitance

V = V600 T = 25°Cf = 1 MHz

RVJ

pF

I

FSM

t = 10 ms; (50 Hz), sine; T = 45°C

VJ

max. forward surge current

V = 0 V

R

T = °C

VJ

150

200 A

1200

FAV

d =rectangular 0.5

average forward current

thermal resistance junction to case

thJC

thermal resistance case to heatsink

thCH

Fast Diode

1200

0.1

IXYS reserves the right to change limits, conditions and dimensions. 20200213cData according to IEC 60747and per semiconductor unless otherwise specified

DHG50X1200NA

preliminary

Ratings

123456yywwZ

XXXXX

Product Marking

Logo

Part

Number



Date

Code

Lot#Location

®

UL

D

H

G

50

X

1200

NA

Part description

Diode

Sonic Fast Recovery Diode

extreme fast

Parallel legs

SOT-227B (minibloc)

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

op

°C

M

D

Nm1.5

mounting torque

1.1

T

VJ

°C150

virtual junction temperature

-40

Weight g30

Symbol

Definition

typ.

max.

min.

Conditions

operation temperature

Unit

M

T

Nm1.5

terminal torque

1.1

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

10.5 3.2

8.6 6.8

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current

100 A

per terminal

125-40

terminal to terminal

SOT-227B (minibloc)

Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering

50/60 Hz, RMS; I ≤ 1 mA

ISOL

DHG50X1200NA 507766Tube 10DHG50X1200NAStandard

3000

ISOL

T

stg

°C150

storage temperature

-40

2500

threshold voltage

V1.23

mΩ

V

0 max

R

0 max

slope resistance *

28

Equivalent Circuits for Simulation

T =

VJ

I

V

0

R

0

Fast

Diode

°C

* on die level

150

IXYS reserves the right to change limits, conditions and dimensions. 20200213cData according to IEC 60747and per semiconductor unless otherwise specified

DHG50X1200NA

preliminary

2

3

1

4

Outlines SOT-227B (minibloc)

IXYS reserves the right to change limits, conditions and dimensions. 20200213cData according to IEC 60747and per semiconductor unless otherwise specified

DHG50X1200NA

preliminary

400 600 800 1000

2

3

4

5

6

0.0 0.5 1.0 1.5 2.0 2.5 3.0

0

10

20

30

40

50

6

0

Qrr

[μC]

IF

[A]

VFid]V[ F/dt [A/μs]

T

VJ

= 125°C

T

VJ

= 25°C

T

VJ

= 125°C

V

R

= 600 V

15 A

30 A

60 A

400 600 800 1000

10

20

30

40

50

60

70

IRR

[A]

diF/dt [A/μs]

T

VJ

= 125°C

V

R

= 600 V

15 A

30 A

60 A

200 400 600 800 1000

100

200

300

400

500

600

700

trr

[ns]

diF/dt [A/μs]

15 A

30 A

60 A

T

VJ

= 125°C

V

R

= 600 V

400 600 800 1000

0.4

0.8

1.2

1.6

Erec

[mJ]

diF/dt [A/μs]

T

VJ

= 125°C

V

R

= 600 V

15 A

30 A

60 A

0.001 0.01 0.1 1 10

0.1

1

tp[s]

ZthJC

[K/W]

2

Fig. 1 Typ. Forward current

versus VF

Fig. 2 Typ. reverse recov. charge

Qrr versus di/dt

Fig. 3 Typ. peak reverse current

IRM versus di/dt

Fig. 5 Typ. recovery time

trr versus di/dt

Fig. 7 Typ. transient thermal impedance junction to case

Fig. 4 Dynamic parameters

Qrr, IRM versus TVJ

Fig. 6 Typ. recovery energy

Erec versus di/dt

i Rii

1 0.3413 0.0025

2 0.2171 0.03

3 0.3475 0.03

4 0.2941 0.08

Fast Diode

IXYS reserves the right to change limits, conditions and dimensions. 20200213cData according to IEC 60747and per semiconductor unless otherwise specified